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Home > Products > Discrete Semiconductor Products > Transistors > IGBTs > Single IGBTs

Infineon Technologies IKZA75N120CH7XKSA1

Name: IKZA75N120CH7XKSA1
Brand: Infineon Technologies
SKU: IKZA75N120CH7XKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IKZA75N120CH7XKSA1

Manufacturer:: Infineon Technologies

Category:: Single IGBTs

Package:: TO-247-4

Datasheet:: IKZA75N120CH7XKSA1.pdf

Description:: IGBT TRENCH FS 1200V 109A TO247

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Product details

Overview

IKZA75N120CH7XKSA1 from Infineon is a high-speed 1200 V, 75 A TRENCHSTOP™ IGBT 7 co-packed with a full-rated 75 A ultra-fast recovery emitter-controlled diode in a PG-TO247-4-STD-NT3.7 package. It delivers V_CE(sat) = 1.7 V at 25°C, t_rr = 95 ns, and Q_rr = 2.44 µC, enabling high-efficiency hard-switching in industrial UPS, EV-charging inverters, and string inverters.

For engineers reviewing the IKZA75N120CH7XKSA1 datasheet, IKZA75N120CH7XKSA1 pinout, IKZA75N120CH7XKSA1 application, or IKZA75N120CH7XKSA1 equivalent, key selection criteria include its positive V_CE(sat) temperature coefficient for stable paralleling, soft-commutating diode behavior, and validated operation up to T_vj = 175°C in 2-level and 3-level NPC/T-type topologies.

Technical Context

This device integrates a 1200 V TRENCHSTOP™ IGBT with optimized carrier lifetime control and a companion 7 Rapid diode featuring low Q_rr, soft reverse recovery (I_rrm = 82 A, dirr/dt = –2370 A/µs), and matched thermal characteristics. Its gate charge (Q_G = 550 nC) and switching times (t_d(on) = 40 ns, t_d(off) = 359 ns at 25°C) are tuned for minimal E_on/E_off trade-off in high-frequency inverters.

The PG-TO247-4-STD-NT3.7 package provides four terminals - including separate emitter and Kelvin emitter pins - to minimize gate loop inductance and enable precise gate drive control. R_th(j-c) = 0.21 K/W (IGBT) and 0.36 K/W (diode) support high-power density designs with forced-air or liquid cooling.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CE	1200 V - supports DC bus voltages up to 1000 V in 2L/3L inverter topologies with margin
I_C / I_F	75 A continuous - rated for both IGBT collector and diode forward current under same thermal conditions
V_CE(sat)	1.7 V @ 75 A, 25°C - enables low conduction loss and reduced heatsink requirements
t_rr / Q_rr	95 ns / 2.44 µC @ 25°C - minimizes diode reverse recovery loss and voltage overshoot during turn-on
T_vj(max)	175°C - allows sustained operation in high-ambient industrial environments without derating
R_th(j-c)	0.21 K/W (IGBT), 0.36 K/W (diode) - enables direct thermal interface to heatsink with predictable junction-to-case delta-T
E_off	1.76 mJ @ 600 V, 75 A, 25°C - quantifies energy dissipated during turn-off, critical for snubber and thermal design

Pinout & Package

Package: PG-TO247-4-STD-NT3.7 - 4-pin through-hole power package with isolated gate, main emitter, Kelvin emitter, and collector terminals; designed for low-inductance gate drive and high-current handling.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Collector)	Main power output node	Connects to DC+ bus or inverter leg midpoint; carries full load current and switching transients
Pin 2 (Gate)	Control input	Drives IGBT channel; requires low-impedance path to suppress oscillation due to C_ies = 9.6 nF
Pin 3 (Emitter)	Main power return	Carries full load current; used for current sensing and power ground reference
Pin 4 (Kelvin Emitter)	Sense/reference emitter	Provides dedicated low-noise path for gate driver feedback, decoupling gate loop from power loop

Key Features

Feature	Design Value
Positive V_CE(sat) temperature coefficient	Enables stable current sharing across paralleled devices without external ballasting resistors
Soft-commutating 7 Rapid diode	Reduces EMI and voltage spikes during freewheeling by limiting di/dt and peak I_rrm
Low internal emitter inductance (L_E = 13 nH)	Minimizes gate-emitter voltage undershoot during fast turn-on, improving noise immunity
RoHS-compliant Pb-free plating	Meets industrial environmental compliance requirements without compromising solder joint reliability
JEDEC47/20/22 qualified	Validated for long-term reliability in industrial applications including thermal cycling and humidity testing

Applications

Industrial UPS

EV-Charging Inverter

Use Scenario: Three-phase online double-conversion UPS delivering clean 50/60 Hz output from rectified DC bus.

IC Role / Device Role / Timing Role: IGBT switches in inverter leg; diode handles motor/generator regenerative current and line-synchronized commutation.

Use Value: Low V_CE(sat) and soft diode recovery reduce conduction and switching losses, extending battery runtime and thermal margin.

Use Scenario: 11–22 kW AC/DC on-board charger using two-level or three-level NPC topology.

IC Role / Device Role / Timing Role: High-side/low-side switching element in PFC and DC-link inverter stages; diode conducts during zero-voltage switching transitions.

Use Value: 175°C rating and low Q_rr allow compact thermal design and high-frequency operation (>20 kHz) without excessive snubbing.

String Inverter

Welding Power Supply

Use Scenario: Central or string PV inverter converting 600–1000 V DC to grid-synchronized AC.

IC Role / Device Role / Timing Role: Main switching device in H-bridge or multilevel output stage; diode manages reactive power flow and anti-parallel current.

Use Value: Optimized E_on/E_off balance (3.77 mJ total @ 25°C) improves efficiency across partial-load conditions typical of solar generation profiles.

Use Scenario: IGBT-based inverter welder delivering controlled 100–500 A DC output with fast arc ignition and short-circuit response.

IC Role / Device Role / Timing Role: Primary power switch in resonant or hard-switched inverter; diode handles high di/dt freewheeling during arc interruption.

Use Value: Ultra-low trr (95 ns) and soft recovery prevent voltage overshoot during rapid current reversal, protecting secondary rectifiers and reducing EMI filter size.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage IGBT + diode module applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IKW75N120H3	1200 V, 75 A TRENCHSTOP™ 3; higher V_CE(sat) (2.1 V), slower diode (t_rr = 220 ns), no Kelvin emitter	Limited to lower-frequency (<10 kHz) hard-switching; unsuitable for paralleling or high-di/dt welding	Select when cost sensitivity outweighs efficiency and thermal performance needs
FF75R12ME4	1200 V, 75 A EconoDUAL™ half-bridge module; includes NTC, press-fit terminals, integrated diode; higher R_th(j-c) (0.32 K/W)	Designed for modular inverter platforms requiring dual-device integration and thermal monitoring	Select when system architecture favors half-bridge modules over discrete TO-247 devices

Compared with IKW75N120H3 and FF75R12ME4, IKZA75N120CH7XKSA1 offers superior high-frequency efficiency via lower switching loss and Kelvin-emitter gate control, while maintaining discrete form-factor flexibility and single-device thermal management.

Availability

IKZA75N120CH7XKSA1 is available at Aetrix Electronics and suitable for industrial UPS, EV-charging inverters, and string inverters requiring stable component supply, long-lifecycle assurance, and JEDEC-qualified reliability.

Supply support for IKZA75N120CH7XKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power electronics, automotive MCUs, and security ICs, with global manufacturing and R&D infrastructure.

This part belongs to the TRENCHSTOP™ IGBT 7 family, engineered specifically for high-efficiency, high-frequency hard-switching inverters in renewable energy and industrial power conversion systems.

FAQ

What is the purpose of the Kelvin emitter pin (Pin 4) on IKZA75N120CH7XKSA1?

The Kelvin emitter pin provides a dedicated low-inductance return path for the gate driver's source connection, isolating gate-loop dynamics from high-current emitter transients. This prevents gate voltage undershoot during fast turn-on and improves switching stability-especially critical when driving at >20 kHz or paralleling multiple devices.

Can IKZA75N120CH7XKSA1 be used in a 3-level T-type inverter?

Yes-its 1200 V blocking voltage, low switching losses (E_ts = 3.77 mJ @ 25°C), and soft-recovery diode make it suitable for all three switching positions in 3L T-type topologies. The Kelvin emitter also supports precise gate control needed for neutral-point clamping accuracy and balanced voltage distribution.

How does the 7 Rapid diode differ from standard FRDs in this device?

The 7 Rapid diode features emitter-controlled structure, ultra-low Q_rr (2.44 µC), soft reverse recovery (limited I_rrm and controlled dirr/dt), and matched thermal characteristics with the IGBT die. Unlike standard FRDs, it minimizes voltage overshoot and EMI during commutation while maintaining low forward voltage (V_F = 2.5 V @ 75 A, 25°C).

Is IKZA75N120CH7XKSA1 compliant with RoHS and REACH regulations?

Yes-the device uses Pb-free lead plating and is fully RoHS compliant per Directive 2011/65/EU. It also meets REACH SVHC requirements, with no substances of very high concern above threshold levels. Full compliance documentation is available via Infineon's product portal under document number "IKZA75N120CH7XKSA1-REACH-RoHS".

IKZA75N120CH7XKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: TRENCHSTOP™

Package/Case:: TO-247-4

Packaging:: Tube

Product Status:: Active

IGBT Type:: Trench Field Stop

Voltage - Collector Emitter Breakdown (Max):: 1200 V

Current - Collector (Ic) (Max):: 109 A

Current - Collector Pulsed (Icm):: 300 A

Vce(on) (Max) @ Vge, Ic:: 2.15V @ 15V, 75A

Power - Max:: 549 W

Switching Energy:: 2.01mJ (on), 1.76mJ (off)

Input Type:: Standard

Gate Charge:: 550 nC

Td (on/off) @ 25°C:: 40ns/359ns

Test Condition:: -

Reverse Recovery Time (trr):: 95 ns

Operating Temperature:: -40°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO247-4-U02

IKZA75N120CH7XKSA1 FAQ

1.How can I place an order for IKZA75N120CH7XKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IKZA75N120CH7XKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IKZA75N120CH7XKSA1 reliable?

The price and inventory of IKZA75N120CH7XKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IKZA75N120CH7XKSA1 is usually 5 days.

3.What payment methods are accepted for IKZA75N120CH7XKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IKZA75N120CH7XKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IKZA75N120CH7XKSA1?

IKZA75N120CH7XKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IKZA75N120CH7XKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IKZA75N120CH7XKSA1?

For technical support, including IKZA75N120CH7XKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IKZA75N120CH7XKSA1 requirements.

6.How does Aetrix verify that IKZA75N120CH7XKSA1 is sourced from the original manufacturer or authorized distributors?

All IKZA75N120CH7XKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IKZA75N120CH7XKSA1 meets industry standards.

7.What is the process for return or replacement of IKZA75N120CH7XKSA1?

All IKZA75N120CH7XKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IKZA75N120CH7XKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IKZA75N120CH7XKSA1 part is unused and in its original packaging.

Return procedure for IKZA75N120CH7XKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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