Infineon Technologies IKZA75N65EH7XKSA1

Overview

IKZA75N65EH7XKSA1 from Infineon is a 650 V, 75 A TRENCHSTOP™ IGBT7 with integrated Emitter Controlled 7 diode in PG-TO247-4-STD-NT3.7 package. It delivers low V_CE(sat) (1.4–1.65 V @ 25 °C), fast switching (t_d(off) = 199 ns), and soft reverse recovery (t_rr = 56 ns @ 25 °C), enabling high-efficiency hard-switching in industrial UPS and EV-charging inverters.

For engineers reviewing the IKZA75N65EH7XKSA1 datasheet, IKZA75N65EH7XKSA1 pinout, IKZA75N65EH7XKSA1 application, or IKZA75N65EH7XKSA1 equivalent, key selection criteria include junction-to-case thermal resistance (0.34 K/W), gate charge (152 nC), diode Q_rr (1.87 µC), and humidity robustness per JEDEC22-A101.

Technical Context

This IGBT7 device uses trench-gate field-stop architecture with optimized carrier lifetime control to simultaneously reduce conduction and switching losses. Its 4-pin TO-247 package separates emitter and Kelvin emitter terminals, enabling precise gate drive control and minimizing voltage overshoot during turn-off.

The co-packed Emitter Controlled 7 diode features low forward voltage (V_F = 1.65 V @ 25 °C) and controlled reverse recovery (dI_rr/dt = –1620 A/µs), ensuring low EMI and reduced snubber stress in two-level and three-level topologies.

Key Specifications

Pinout & Package

Package: PG-TO247-4-STD-NT3.7 - 4-terminal TO-247 variant with isolated Kelvin emitter (E_K) for accurate gate control and reduced Miller-induced turn-on risk.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage IGBT applications.

Compared with IKW75N65ES7 and FGH75T65SHD, IKZA75N65EH7XKSA1 offers superior switching efficiency (22% lower E_ts than FGH75T65SHD) and gate drive fidelity (Kelvin emitter eliminates source inductance error), making it optimal for high-density, high-frequency UPS and EV-charging systems.

Availability

IKZA75N65EH7XKSA1 is available at Aetrix Electronics and suitable for industrial UPS, EV-charging infrastructure, and string solar inverters requiring stable component supply, long-lifecycle assurance, and JEDEC-qualified reliability.

Supply support for IKZA75N65EH7XKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor leader specializing in power, sensor, and automotive ICs, with over 30 years of IGBT innovation and industrial-grade qualification expertise.

This device belongs to the TRENCHSTOP™ IGBT7 family, engineered specifically for high-efficiency, high-power-density industrial inverters operating above 10 kHz with stringent thermal and reliability demands.

FAQ

What is the maximum recommended gate resistor value for reliable turn-off?

The datasheet specifies RG(off) = 10 Ω for characterization, and simulation shows stable turn-off with up to 22 Ω at 15 V gate drive and T_vj = 175 °C. Higher values increase t_d(off) and E_off, risking shoot-through in half-bridges; 15 Ω is the practical upper limit for 20 kHz operation with 4 A peak gate drivers.

Can IKZA75N65EH7XKSA1 replace IKW40N65ES5 in an existing design?

No - IKW40N65ES5 is a 40 A, 5-pin TO-247 IGBT with different pinout, lower current rating, and no Kelvin emitter. Direct replacement would require PCB redesign, gate driver recalibration, and thermal revalidation due to 87.5% higher current density and altered switching dynamics.

Is the internal emitter inductance specified, and how does it affect layout?

Yes - LE = 13 nH measured 5 mm from case. This low inductance enables tight gate loop routing; however, the Kelvin emitter must be routed separately from the power emitter to avoid reintroducing inductance into the gate return path, which would degrade switching speed and cause oscillation.

Does this part support paralleling, and what layout precautions apply?

Yes - its positive V_CE(sat) temperature coefficient (1.6 V @ 175 °C) enables stable current sharing. For paralleling, match gate resistor values within ±5%, use symmetrical copper pours for C/E/E_K connections, and ensure identical thermal mounting pressure across all devices to maintain ΔT_vj < 5 K.