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Infineon Technologies IKZA75N65RH5XKSA1
- Part No.:
- IKZA75N65RH5XKSA1
- Manufacturer:
- Infineon Technologies
- Category:
- Single IGBTs
- Package:
- TO-247-4
- Datasheet:
-
IKZA75N65RH5XKSA1.pdf
- Description:
- IGBT TRENCH FS 650V 80A TO247-4
- Quantity:
- Payment:
- Shipping:
Inventory:49
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Product details
Overview
IKZA75N65RH5XKSA1 from Infineon is a CoolSiC™ Hybrid Discrete combining a 650 V, 75 A TRENCHSTOP™ 5 H5 IGBT with a half-rated 6th-generation CoolSiC™ Schottky diode in a single PG-TO247-4-3 package. It delivers ultra-low switching losses via Kelvin emitter pin and optimized layout, operates up to 175 °C junction temperature, and targets high-efficiency hard-switching industrial power converters.
For engineers reviewing the IKZA75N65RH5XKSA1 datasheet, IKZA75N65RH5XKSA1 pinout, IKZA75N65RH5XKSA1 application, or IKZA75N65RH5XKSA1 equivalent, key selection criteria include VCE = 650 V, IC = 75 A, VCEsat = 1.95 V @ 175 °C, Eoff = 0.4 mJ @ 150 °C, and Kelvin-emitter four-pin configuration for gate drive stability.
Technical Context
This hybrid discrete integrates an IGBT with a co-packaged SiC Schottky diode-enabling simultaneous optimization of conduction and switching performance. The Kelvin emitter terminal decouples gate drive current path from power emitter, reducing dynamic voltage overshoot and improving switching controllability under high di/dt conditions.
The device uses TRENCHSTOP™ 5 H5 IGBT die architecture with field-stop design and low tail current, paired with a 650 V, 45.7 A SiC diode exhibiting VF = 1.5 V @ 30 A/25 °C and negligible reverse recovery charge. Thermal resistance Rth(j-c) is 0.38 K/W (IGBT) and 1.2 K/W (diode), enabling high-power density operation at Tvj ≤ 175 °C.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCE | 650 V - Maximum blocking voltage compatible with 400 V DC bus systems with 30 % margin for transients. |
| IC | 75 A @ Tc = 100 °C - Continuous collector current rating defining thermal derating envelope for heatsink sizing. |
| VCEsat | 1.95 V @ IC = 75 A, Tvj = 175 °C - Low saturation voltage reduces conduction loss and improves efficiency at full load. |
| Eoff | 0.4 mJ @ VCC = 400 V, IC = 37.5 A, Tvj = 150 °C - Ultra-low turn-off energy enables high-frequency hard-switching without excessive loss penalty. |
| Rth(j-c) (IGBT) | 0.38 K/W - Enables direct mounting to heatsink with predictable thermal drop for junction temperature estimation. |
| QG | 168 nC @ VGE = 15 V - Gate charge value used to size gate driver peak current (≥ 2 A typical for 100 ns rise time). |
| Tvjmax | 175 °C - Extended junction temperature rating supports compact designs and higher ambient operating environments. |
Pinout & Package
Package: PG-TO247-4-3 - 4-pin through-hole package with isolated Kelvin emitter terminal, backside collector contact, and optimized pin spacing for wave soldering reliability and reduced parasitic inductance.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin C & backside | Collector | Main high-side power terminal; backside metal enables low-inductance, high-current connection to heatsink/PCB plane. |
| Pin E | Emitter (power) | Primary emitter return path for main load current; carries full IC/IF during conduction. |
| Pin K | Kelvin emitter | Dedicated low-current emitter sense path for gate driver feedback-eliminates VCE sensing error due to emitter lead inductance. |
| Pin G | Gate | Control input for IGBT turn-on/turn-off; requires stable ±20 V drive with low-impedance path to Kelvin emitter reference. |
Key Features
| Feature | Design Value |
|---|---|
| Kelvin emitter pin | Enables precise gate control by removing emitter lead inductance from gate loop-critical for stable high-speed switching and reduced voltage overshoot. |
| Hybrid IGBT + SiC diode | Combines low-conduction-loss IGBT with zero-Qrr, low-VF SiC diode-eliminates reverse recovery losses and associated EMI in bridge-leg configurations. |
| JEDEC-qualified 175 °C operation | Validated for continuous use at maximum junction temperature, supporting smaller heatsinks and higher power density in industrial UPS and solar inverters. |
| Optimized 4-pin layout | Increased clearance between Kelvin emitter and gate pins improves wave soldering yield and reduces risk of solder bridging in high-volume manufacturing. |
| Pb-free, RoHS-compliant plating | Meets global environmental compliance requirements without compromising solderability or long-term intermetallic reliability. |
Applications
| Industrial SMPS | Solar String Inverter |
|---|---|
Use Scenario: High-efficiency 3–10 kW telecom rectifiers and server PSUs operating at 50–100 kHz switching frequency. IC Role / Device Role / Timing Role: Main switch in phase-shifted full-bridge or LLC resonant converter primary side. Use Value: 0.76 mJ total switching energy at 150 °C enables >97 % efficiency at full load while maintaining thermal headroom. | Use Scenario: DC–AC conversion stage in string inverters with 600–1000 V DC input and 50/60 Hz AC output. IC Role / Device Role / Timing Role: Upper-leg IGBT in unipolar PWM H-bridge with anti-parallel SiC diode conducting freewheeling current. Use Value: SiC diode's 1.5 V forward drop and zero Qrr reduce conduction loss and eliminate diode-induced shoot-through risk during commutation. |
| Industrial UPS | Energy Storage System (ESS) Bi-directional Converter |
Use Scenario: Online double-conversion UPS delivering clean 230 V AC output with <10 ms switchover and active PFC front-end. IC Role / Device Role / Timing Role: Inverter-stage switch handling bidirectional power flow during battery charging/discharging cycles. Use Value: 175 °C Tvjmax and 0.38 K/W Rth(j-c) support sustained 100 % load operation in enclosed cabinets without forced air. | Use Scenario: 5–50 kW grid-tied ESS converters managing charge/discharge between Li-ion battery banks and AC grid or microgrid. IC Role / Device Role / Timing Role: Half-bridge switch in interleaved two-level topology with synchronous rectification capability via SiC diode. Use Value: Hybrid structure allows soft-switching benefits of SiC with IGBT-like gate drive simplicity-reducing system BOM cost vs. all-SiC solutions. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar hybrid IGBT + SiC diode applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IKWA50N65ES5 | 650 V, 50 A rated; lower current, same hybrid architecture and Kelvin emitter; Rth(j-c) = 0.52 K/W. | Better suited for 3–5 kW designs where thermal margin exceeds requirement; smaller footprint not available. | Select when lower conduction loss at partial load outweighs need for 75 A rating. |
| FF600R06ME4_B11 | 650 V, 600 A dual IGBT module with integrated SiC diodes; no Kelvin emitter; requires external gate resistors and complex layout. | Targeted at multi-kW motor drives-not plug-and-play replacement; higher cost and larger PCB area. | Choose only for systems requiring >100 A per switch and accepting module-level complexity. |
Compared with IKWA50N65ES5, IKZA75N65RH5XKSA1 delivers 50 % higher current capacity and 27 % lower Rth(j-c), enabling higher power density; versus FF600R06ME4_B11, it offers simpler gate drive, lower gate charge, and direct TO-247 drop-in fit-ideal for cost-sensitive, space-constrained industrial SMPS.
Availability
IKZA75N65RH5XKSA1 is available at Aetrix Electronics and suitable for industrial SMPS, solar string inverters, and energy storage systems requiring stable component supply, JEDEC-qualified reliability, and extended 175 °C operation.
Supply support for IKZA75N65RH5XKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and renewable energy markets.
The CoolSiC™ Hybrid Discrete product line merges silicon IGBTs with SiC diodes to deliver optimized cost-performance trade-offs for high-efficiency, high-reliability industrial power conversion-targeting applications where all-SiC is over-specified and standard silicon lacks efficiency.
FAQ
What is the purpose of the Kelvin emitter pin (Pin K) on IKZA75N65RH5XKSA1?
The Kelvin emitter pin provides a dedicated low-current reference path for the gate driver, isolating gate control from power emitter voltage drops caused by high di/dt. This eliminates dynamic threshold shift and ensures consistent turn-on timing, especially critical in high-frequency hard-switching topologies like phase-shifted full-bridge converters.
Can IKZA75N65RH5XKSA1 replace standard silicon IGBTs without circuit redesign?
Yes-it is designed as a plug-and-play replacement for 650 V silicon IGBTs in existing TO-247-4 layouts, provided the gate driver supports Kelvin emitter feedback and the PCB routing separates Pin K from Pin E. No changes to snubber networks or gate resistor values are required for basic operation, though optimizing RG may further reduce Eon/Eoff.
How does the integrated CoolSiC™ diode improve system efficiency compared to standard FRD counterparts?
The co-packaged 6th-generation CoolSiC™ diode eliminates reverse recovery charge (Qrr ≈ 0), removing associated switching losses and EMI spikes during commutation. Its 1.5 V forward voltage at 30 A/25 °C is ~0.4 V lower than fast recovery diodes, reducing conduction loss by ~25 % in freewheeling paths of bridge-leg topologies.
What thermal interface material and mounting torque are recommended for IKZA75N65RH5XKSA1?
Infineon specifies M3 screw mounting with maximum torque of 0.6 Nm. A thermally conductive, electrically insulating pad or grease (e.g., 1–2 W/m·K thermal conductivity) is recommended between the backside collector and heatsink. Ensure flatness ≤ 25 µm and surface roughness ≤ 1.6 µm to maintain Rth(j-c) = 0.38 K/W performance.
IKZA75N65RH5XKSA1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- TrenchStop™ 5
- Package/Case:
- TO-247-4
- Packaging:
- Tube
- Product Status:
- Active
- IGBT Type:
- Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max):
- 650 V
- Current - Collector (Ic) (Max):
- 80 A
- Current - Collector Pulsed (Icm):
- 300 A
- Vce(on) (Max) @ Vge, Ic:
- 2.1V @ 15V, 75A
- Power - Max:
- 395 W
- Switching Energy:
- 310µJ (on), 300µJ (off)
- Input Type:
- Standard
- Gate Charge:
- 168 nC
- Td (on/off) @ 25°C:
- 25ns/180ns
- Test Condition:
- 400V, 37.5A, 9Ohm, 15V
- Reverse Recovery Time (trr):
- -
- Operating Temperature:
- -40°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- PG-TO247-4-3
IKZA75N65RH5XKSA1 FAQ
1.How can I place an order for IKZA75N65RH5XKSA1 through Aetrix?
Please submit a Request for Quotation (RFQ) for IKZA75N65RH5XKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IKZA75N65RH5XKSA1 reliable?
The price and inventory of IKZA75N65RH5XKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IKZA75N65RH5XKSA1 is usually 5 days.
3.What payment methods are accepted for IKZA75N65RH5XKSA1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IKZA75N65RH5XKSA1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IKZA75N65RH5XKSA1?
IKZA75N65RH5XKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IKZA75N65RH5XKSA1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IKZA75N65RH5XKSA1?
For technical support, including IKZA75N65RH5XKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IKZA75N65RH5XKSA1 requirements.
6.How does Aetrix verify that IKZA75N65RH5XKSA1 is sourced from the original manufacturer or authorized distributors?
All IKZA75N65RH5XKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IKZA75N65RH5XKSA1 meets industry standards.
7.What is the process for return or replacement of IKZA75N65RH5XKSA1?
All IKZA75N65RH5XKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IKZA75N65RH5XKSA1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IKZA75N65RH5XKSA1 part is unused and in its original packaging.
Return procedure for IKZA75N65RH5XKSA1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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