Infineon Technologies IKZA75N65SS5XKSA1

Overview

IKZA75N65SS5 from Infineon is a CoolSiC™ Hybrid Discrete combining a 650 V, 75 A TRENCHSTOP™ 5 IGBT with a full-rated 6th-generation CoolSiC™ Schottky diode in a single PG-TO247-4-3 package. It delivers ultra-low switching losses via Kelvin emitter pin and benchmark efficiency in hard-switching topologies such as solar string inverters and industrial UPS systems.

For engineers reviewing the IKZA75N65SS5 datasheet, IKZA75N65SS5 pinout, IKZA75N65SS5 application, or IKZA75N65SS5 equivalent, key selection criteria include V_CE = 650 V, I_C = 75 A, V_CEsat = 1.65 V @ T_vj = 175 °C, E_off = 1.26 mJ @ T_vj = 150 °C, and R_th(j-c) = 0.38 K/W for thermal design and loss budgeting.

Technical Context

This hybrid discrete integrates an IGBT and SiC diode on a shared substrate with independent thermal paths. The Kelvin emitter (Pin K) enables precise gate control by eliminating source inductance effects, while the four-pin TO247 package separates high-current (C, E) and signal-level (G, K) terminals to suppress parasitic oscillation during fast switching.

It operates up to T_vj = 175 °C with JEDEC qualification for industrial SMPS and energy storage applications. The diode's V_F = 1.65 V @ T_vj = 175 °C and R_th(j-c) = 0.68 K/W support high-efficiency, low-loss freewheeling in bidirectional power stages.

Key Specifications

Pinout & Package

The IKZA75N65SS5 uses the PG-TO247-4-3 package: a 4-pin variant of TO-247 with isolated Kelvin emitter terminal. The backside collector serves as primary heat path and high-current return.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar hybrid IGBT-diode applications.

Compared with IKW40N65H5 and FF75R12ME4, the IKZA75N65SS5 uniquely balances 650 V rating, 75 A current, Kelvin emitter precision, and discrete-level integration-making it optimal for space-constrained, high-efficiency 5–10 kW solar and UPS designs where thermal management and switching fidelity are critical.

Availability

IKZA75N65SS5 is available at Aetrix Electronics and suitable for industrial SMPS, solar string inverters, and energy storage system converters requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for IKZA75N65SS5 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and renewable energy markets.

The CoolSiC™ Hybrid Discrete product line integrates silicon IGBTs with SiC diodes to deliver superior efficiency and reliability in high-frequency, high-power converters-specifically targeting solar, UPS, and industrial SMPS applications.

FAQ

What is the purpose of the Kelvin emitter (Pin K) in the IKZA75N65SS5?

The Kelvin emitter provides a dedicated low-current reference path for the gate driver's emitter return, isolating it from high di/dt power emitter current. This eliminates voltage drop across emitter inductance during switching, ensuring accurate V_GE control and reducing overshoot, ringing, and timing uncertainty-critical for stable operation above 50 kHz.

Can the IKZA75N65SS5 replace standard TO-247 IGBTs without PCB redesign?

Yes-it uses the same PG-TO247-4-3 mechanical outline as standard TO-247 packages but adds Pin K. Layout compatibility requires retaining the existing 3-pin footprint while routing the Kelvin emitter to the gate driver's emitter sense node. No change to heatsink or mounting holes is needed, enabling plug-and-play upgrade from silicon-only devices.

How does the integrated CoolSiC™ diode improve performance over a standard silicon freewheeling diode?

The 6th-generation CoolSiC™ Schottky diode has zero reverse recovery charge (Q_rr ≈ 0), eliminating associated switching loss, voltage spikes, and EMI. Its V_F = 1.65 V @ 175 °C remains stable across temperature, unlike silicon diodes whose V_F drops with heating-enabling predictable loss modeling and improved partial-load efficiency in bidirectional converters.

What is the maximum recommended gate resistor value for reliable switching at 100 kHz?

Based on measured t_d(on) = 22 ns and t_d(off) = 145 ns at R_G = 5.6 Ω, a gate resistor ≤ 10 Ω is recommended for 100 kHz operation. Higher values increase switching time and loss; lower values risk gate oscillation. Use ferrite-beaded gate traces and local 100 nF ceramic decoupling to maintain stability with the Kelvin emitter configuration.