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Infineon Technologies IR3550MTRPBF
- Part No.:
- IR3550MTRPBF
- Manufacturer:
- Infineon Technologies
- Category:
- Full Half-Bridge (H Bridge) Drivers
- Package:
- 32-PowerVFQFN
- Datasheet:
-
IR3550MTRPBF.pdf
- Description:
- IC HALF BRIDGE DRIVER 60A 32QFN
- Quantity:
- Payment:
- Shipping:
Inventory:4,018
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Product details
Overview
IR3550MTRPBF from Infineon Technologies is a 60A integrated PowIRstage® synchronous buck power stage combining gate driver, control MOSFET, synchronous MOSFET, and integrated Schottky diode in a single 6mm × 6mm PQFN package. It delivers up to 95% peak efficiency at 1.2V output, supports 4.5–15V input, operates up to 1.0MHz, and integrates a current sense amplifier with 32.5 V/V gain for high-accuracy phase-current monitoring in CPU/GPU core VRs.
For engineers reviewing the IR3550MTRPBF datasheet, IR3550MTRPBF pinout, IR3550MTRPBF application, or IR3550MTRPBF equivalent, key selection criteria include its DrMOS V4.0 compliance, Body-Braking® transient support, diode-emulation mode for light-load efficiency, thermal flag output, and PCB footprint compatibility with IR3551 (50A) and IR3553 (40A).
Technical Context
The IR3550 implements a co-packaged synchronous buck power stage with monolithically integrated driver logic, high-side and low-side MOSFETs, and an on-die Schottky diode for body-diode conduction mitigation. Its internal current sense amplifier uses differential inputs (CSIN+/CSIN−) referenced to REFIN and provides a calibrated 32.5× gain IOUT signal with ±450 µV offset.
It features dual-mode PWM control: tri-state input enables Body-Braking® during load transients and activates internal diode emulation when BBRK# is pulled low post-UVLO. Phase fault detection (PHSFLT#) monitors MOSFET shorts/opens and thermal overtemperature (160°C trip), while VCC UVLO (3.3–4.1V start) ensures robust bias regulation.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Output Current | 60A DC continuous rating - defines maximum steady-state load capability without derating under specified thermal conditions. |
| Peak Efficiency | 95% at 1.2V/300kHz - enables minimal power loss and thermal rise in high-current CPU/GPU core rails. |
| Switching Frequency | 200–1000 kHz - supports compact magnetics and fast transient response while maintaining efficiency. |
| Input Voltage Range | 4.5V to 15V - compatible with standard 5V, 12V intermediate bus architectures in servers and workstations. |
| Current Sense Gain | 32.5 V/V ±7.5% - provides precise, temperature-stable phase-current feedback for controller-based current sharing and OCP. |
| Thermal Trip Threshold | 160°C rising edge - triggers PHSFLT# assertion to initiate system-level thermal shutdown before junction damage. |
| Package | 32-pin PQFN, 6mm × 6mm × 0.9mm - enables dual-sided cooling and matches IR3551/IR3553 footprints for design scalability. |
Pinout & Package
IR3550MTRPBF uses a thermally enhanced 32-pin PQFN package (6mm × 6mm × 0.9mm) with exposed thermal pad (pin 17) and dual ground planes (PGND and LGND) for optimal power dissipation and signal integrity. The layout separates power, analog, and digital grounds to minimize noise coupling into the current sense amplifier.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2 (CSIN−, CSIN+) | Differential input to current sense amplifier | Connect across sense resistor or inductor DCR; enables accurate, low-noise phase-current monitoring independent of controller. |
| 3 (VCC) | Bias supply for logic and drivers | 4.5–7V input; requires ≥0.22µF decoupling to PGND; UVLO protects against unstable operation below 3.3V. |
| 4, 16, 17 (PGND) | Power ground reference for MOSFETs and drivers | High-current return path; must be low-inductance and thermally connected to PCB copper for 60A handling. |
| 5, 32 (GATEL) | Low-side gate driver output test point | Allows oscilloscope probing of low-side switching waveform without loading internal driver node. |
| 6–15 (SW) | Switch node connection | High dv/dt node shared by both MOSFETs; requires tight layout with VIN and PGND capacitors to minimize ringing. |
| 18–23 (VIN) | Main input voltage supply | Accepts 4.5–15V; multiple parallel pins reduce resistance and inductance for 60A RMS current delivery. |
| 24 (BOOST) | Bootstrap capacitor connection | Charges high-side gate driver; requires ≥0.22µF ceramic cap placed adjacent to pin with minimal trace inductance. |
| 25 (PHSFLT#) | Open-drain phase fault indicator | Asserts low on MOSFET short/open or junction >160°C; requires external pull-up for system fault signaling. |
| 26 (PWM) | 3.3V logic-level tri-state input | High = high-side on, Low = low-side on, Tri-state = Body-Braking® or diode emulation activation. |
| 27 (BBRK#) | Body-Braking® enable / diode emulation select | Pull low ≥20ns after VCC UVLO to activate diode emulation; otherwise enables Body-Braking® during transients. |
| 28 (LGND) | Signal and analog ground reference | Reference for REFIN, CSIN+, CSIN−, and internal analog blocks; must be isolated from PGND in PCB layout. |
| 29 (REFIN) | Reference voltage input for current sense | Sets common-mode level for IOUT; typically tied to controller's VREF; float if current sense not used. |
| 30 (IOUT) | Current sense amplifier output | Voltage = V(REFIN) + 32.5 × [V(CSIN+) − V(CSIN−)]; drives external controller ADC or comparator. |
| 31 (TGND) | Internal thermal/signal ground | Must be electrically isolated from PGND and LGND on PCB to preserve current sense accuracy and thermal sensing fidelity. |
Key Features
| Feature | Design Value |
|---|---|
| Integrated Schottky diode | Eliminates external body-diode conduction loss during low-side FET dead time, improving light-load efficiency. |
| Body-Braking® load transient support | Tri-state PWM command actively discharges output inductor energy during rapid load drops, reducing required bulk capacitance by up to 30%. |
| DrMOS V4.0 compliance | Meets Intel's specification for digital power stages including timing, protection, and communication interface readiness for VR13/VR14 controllers. |
| Dual-sided cooling architecture | Exposed thermal pad (pin 17) and top-surface thermal path enable heatsink attachment or thermal vias for 1.9°C/W θJB performance. |
| Diode-emulation mode | Automatically replaces zero-current detection burden on controller; improves light-load efficiency without requiring complex controller firmware. |
Applications
| CPU Core Power Delivery | GPU Core Power Delivery |
|---|---|
Use Scenario: High-current, dynamically scaled voltage rail for multi-core x86 server CPUs requiring sub-1.2V operation and <100ns transient response. IC Role / Device Role / Timing Role: Integrated power stage providing synchronous buck conversion, current sensing, and phase fault reporting directly to VR controller. Use Value: Enables 60A per phase with 95% efficiency at 1.2V, reducing board area and thermal management complexity versus discrete solutions. | Use Scenario: Compact, high-efficiency power stage for workstation and datacenter GPU cores operating at 0.8–1.1V with aggressive load-step requirements. IC Role / Device Role / Timing Role: Co-packaged driver/MOSFET stage delivering fast switching (up to 1MHz), Body-Braking® transient support, and accurate current telemetry. Use Value: Reduces output capacitance by 25–30% via Body-Braking®, lowering BOM cost and enabling thinner graphics card PCBs. |
| DDR Memory VDDQ Supply | High-Density Server VRM Modules |
Use Scenario: Dual-rail power delivery for DDR4/DDR5 memory interfaces requiring tightly regulated 1.2V/1.1V VDDQ with low noise and high current density. IC Role / Device Role / Timing Role: Synchronous buck stage with integrated current sense amplifier feeding controller-based closed-loop regulation and current balancing. Use Value: Achieves ±1% output regulation with 32.5× current sense gain and <±450 µV offset, ensuring signal integrity across memory channels. | Use Scenario: Multi-phase VRM designs in 1U/2U rack servers where footprint, thermal density, and supply-chain consistency are critical. IC Role / Device Role / Timing Role: Drop-in compatible power stage matching IR3551/IR3553 footprints, enabling scalable phase count (40A–60A) without PCB redesign. Use Value: Simplifies inventory management and design reuse across product generations while maintaining DrMOS V4.0 compliance. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar integrated power stage applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IR3551MTRPBF | 50A DC rating, identical 6mm × 6mm footprint, same pinout and feature set except lower current capability. | Targeted at mid-tier CPUs or GPUs with lower sustained current demands; lower thermal stress but reduced headroom for burst loads. | Select when 50A continuous rating suffices and cost optimization is prioritized without sacrificing layout compatibility. |
| IR3553MTRPBF | 40A DC rating, same package and pinout, identical functional block diagram and protection features. | Optimized for entry-level server CPUs or DDR memory rails where peak current rarely exceeds 40A and thermal envelope is tighter. | Choose for space-constrained DDR VDDQ or auxiliary rails where 40A meets spec and BOM cost is sensitive. |
Compared with IR3551MTRPBF and IR3553MTRPBF, the IR3550MTRPBF delivers highest current density (60A) in the same footprint, enabling fewer phases for equivalent power delivery-reducing component count, layout complexity, and total solution size in high-end CPU/GPU VRMs.
Availability
IR3550MTRPBF is available at Aetrix Electronics and suitable for CPU core power delivery, GPU voltage regulation, and DDR memory VDDQ supplies requiring stable component supply, long-term lifecycle assurance, and full RoHS-compliant sourcing.
Supply support for IR3550MTRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a global semiconductor leader specializing in power management, sensor, and automotive ICs, with deep expertise in silicon and silicon carbide power devices and integrated power systems.
The IR3550 belongs to Infineon's PowIRstage® family-engineered specifically for high-efficiency, high-current DC-DC conversion in server, workstation, and AI accelerator power delivery, emphasizing thermal performance, integration density, and DrMOS compliance.
FAQ
What is the recommended minimum boost capacitor value for IR3550MTRPBF?
The datasheet specifies a minimum 0.22 µF ceramic capacitor between BOOST and SW pins. This value ensures sufficient charge storage to fully drive the high-side MOSFET gate across the full duty cycle range at up to 1 MHz. Placement must be adjacent to the BOOST pin with minimal trace length to avoid bootstrap voltage droop or oscillation.
How does the IR3550MTRPBF implement Body-Braking® functionality?
Body-Braking® is activated when the PWM input enters tri-state mode during a load step-down event. This turns off both MOSFETs and allows the synchronous MOSFET's body diode to conduct in reverse, actively discharging the output inductor into the input rail. The resulting negative current is detected and managed internally to suppress output voltage overshoot without relying on external circuitry.
Can IR3550MTRPBF operate without using the integrated current sense amplifier?
Yes. When unused, CSIN+ and CSIN− must be tied to LGND, REFIN connected to LGND, IOUT left floating, and TGND connected to PGND. The device then operates in standard DrMOS mode using external controller-based current sensing (e.g., DCR or shunt), retaining all protection features and switching functionality.
What thermal metrics define the IR3550MTRPBF's cooling requirements?
Key thermal parameters include θJB = 1.9°C/W (junction-to-PCB via pin 17), θJC_TOP = 14.3°C/W (junction-to-case top), and θJA = 20.2°C/W (junction-to-ambient on standard test board). For 60A operation, a 4-layer PCB with ≥2 oz copper, thermal vias under the exposed pad, and optional top-side heatsink is recommended to maintain TJ ≤ 125°C under worst-case airflow conditions.
IR3550MTRPBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- PowIRstage®
- Package/Case:
- 32-PowerVFQFN
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Output Configuration:
- Half Bridge
- Applications:
- Synchronous Buck Converters, Voltage Regulators
- Interface:
- PWM
- Load Type:
- Inductive
- Technology:
- Power MOSFET
- Rds On (Typ):
- -
- Current - Output / Channel:
- 60A
- Current - Peak Output:
- 90A
- Voltage - Supply:
- 4.5V ~ 7V
- Voltage - Load:
- 4.5V ~ 15V
- Operating Temperature:
- -40°C ~ 125°C (TJ)
- Grade:
- -
- Qualification:
- -
- Features:
- Bootstrap Circuit, Diode Emulation, Status Flag
- Fault Protection:
- Over Temperature, Shoot-Through, UVLO
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 32-PQFN (6x6)
IR3550MTRPBF FAQ
1.How can I place an order for IR3550MTRPBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IR3550MTRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IR3550MTRPBF reliable?
The price and inventory of IR3550MTRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IR3550MTRPBF is usually 5 days.
3.What payment methods are accepted for IR3550MTRPBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IR3550MTRPBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IR3550MTRPBF?
IR3550MTRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IR3550MTRPBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IR3550MTRPBF?
For technical support, including IR3550MTRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IR3550MTRPBF requirements.
6.How does Aetrix verify that IR3550MTRPBF is sourced from the original manufacturer or authorized distributors?
All IR3550MTRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IR3550MTRPBF meets industry standards.
7.What is the process for return or replacement of IR3550MTRPBF?
All IR3550MTRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IR3550MTRPBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IR3550MTRPBF part is unused and in its original packaging.
Return procedure for IR3550MTRPBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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