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Infineon Technologies IR3575MTRPBF
- Part No.:
- IR3575MTRPBF
- Manufacturer:
- Infineon Technologies
- Category:
- Full Half-Bridge (H Bridge) Drivers
- Package:
- 32-PowerWFQFN
- Datasheet:
-
IR3575MTRPBF.pdf
- Description:
- IC HALF BRIDGE DRIVER 60A 32QFN
- Quantity:
- Payment:
- Shipping:
Inventory:1,752
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Product details
Overview
IR3575MTRPBF from Infineon Technologies is a 60A exposed-top Integrated PowIRstage® combining synchronous buck gate driver, control MOSFET, synchronous MOSFET, and integrated Schottky diode in a single 6mm × 6mm PQFN package. It delivers up to 95% peak efficiency at 1.2V output, supports 4.5–15V input, operates up to 1.0MHz, and integrates current sense amplifier with 32.5 V/V gain for high-accuracy DC-DC regulation in CPU/GPU core power delivery.
For engineers reviewing the IR3575MTRPBF datasheet, IR3575MTRPBF pinout, IR3575MTRPBF application, or IR3575MTRPBF equivalent, this device is selected for high-current, low-voltage server VRMs requiring Body-Braking® transient support, diode-emulation light-load efficiency, and PCB footprint compatibility with IR3550/IR3551.
Technical Context
The IR3575 implements a co-packaged synchronous buck stage with custom-timed gate drivers optimized for minimal dead-time and layout-induced timing skew. Its integrated current sense amplifier uses self-calibrated offset (±450 µV) and differential input range (±25 mV) referenced to REFIN, enabling precise current reporting without external DCR sensing.
Body-Braking® is activated via tri-state PWM input and controlled by BBRK# pin logic; diode-emulation mode eliminates zero-current detection burden on the controller and improves light-load efficiency. Phase fault detection monitors SW-to-PGND voltage thresholds (3.3V for control MOSFET short, 150–250mV for sync MOSFET short/open) with 15-cycle propagation delay.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Output Current | 60A DC continuous - supports high-density CPU/GPU core rails without parallel stages |
| Peak Efficiency | 95% at 1.2V/300kHz - reduces thermal load and enables compact heatsink-less designs |
| Switching Frequency | 200–1000 kHz - allows miniaturized magnetics (e.g., 150nH inductor) while maintaining transient response |
| Current Sense Gain | 32.5 V/V - converts ±25mV CSIN+/- differential to ~0.8V IOUT swing for accurate controller feedback |
| VCC UVLO Threshold | 3.3–4.1V start / 3.0–3.8V stop - ensures stable logic bias before gate drive activation |
| Thermal Flag Threshold | Rising: 160°C, Falling: 135°C - provides hysteresis for reliable overtemperature shutdown and recovery |
| Package | 32-pin PQFN, 6mm × 6mm × 0.9mm with exposed top pad - enables direct top-side cooling and 0.5°C/W θJC_TOP |
Pinout & Package
IR3575MTRPBF uses a 32-pin PQFN package (6mm × 6mm × 0.9mm) with exposed top thermal pad. The package supports enhanced top-side cooling via insulated thermal interface to heatsink and is RoHS-compliant and lead-free.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2 (CSIN−, CSIN+) | Differential input to integrated current sense amplifier | Accepts ±25mV sense voltage across external shunt or DCR network; referenced to REFIN |
| 3 (VCC) | Bias supply for internal logic and gate drivers | 4.5–7V input; requires ≥0.22µF bypass cap to PGND (pin 4); UVLO protects against unstable operation |
| 4, 16, 17 (PGND) | Power ground reference for MOSFET drivers and sync FET | High-current return path (65A RMS); must be low-inductance and thermally coupled to exposed pad |
| 5, 32 (GATEL) | Low-side gate driver output test points | Accessible waveform monitoring nodes; rated for 1A pulse (100ns), 200mA DC |
| 6–15 (SW) | Switch node connection | High dv/dt node shared by control/sync MOSFETs; rated 25V max, 90A peak, requires tight capacitor placement |
| 18–23 (VIN) | Main high-current input voltage rail | 4.5–15V input; multiple pins reduce resistance/inductance; requires ≥2×10µF + 0.22µF local decoupling |
| 24 (BOOST) | Bootstrap capacitor connection for high-side gate drive | Requires ≥0.22µF cap to SW; max BOOST–SW = 8V; forward diode VFWD = 360–920mV |
| 25 (PHSFLT#) | Open-drain phase fault indicator | Pulls low on MOSFET short/open or junction temp >160°C; requires external pull-up |
| 26 (PWM) | 3.3V logic-level tri-state input | "High" = control FET on; "Low" = sync FET on; "Tri-state" = Body-Braking® or diode emulation activation |
| 27 (BBRK#) | Mode-select input with internal 3.3V pull-up | Pull low ≥20ns after VCC UVLO to enable diode emulation; logic low disables both FETs |
| 28 (LGND) | Signal ground for analog/IC substrate | Must be isolated from PGND/TGND in PCB layout to preserve current sense accuracy |
| 29 (REFIN) | Reference voltage input for current sense amplifier | Sets IOUT common-mode level; range 0.25V to VCC−2.5V; connect to LGND if unused |
| 30 (IOUT) | Current-sense amplifier output | V(REFIN) + 32.5×[V(CSIN+)−V(CSIN−)]; float if current sense not used |
| 31 (TGND) | Internal thermal/power ground for sense circuitry | Must be electrically isolated from PGND/LGND; connect to PGND only if current sense disabled |
Key Features
| Feature | Design Value |
|---|---|
| Integrated current sense amplifier | Self-calibrated ±450 µV offset and 32.5 V/V gain eliminate need for external DCR sensing and improve signal-to-noise ratio |
| Body-Braking® load transient support | Tri-state PWM input actively discharges output capacitance during load step-down, reducing required bulk capacitance by up to 30% |
| Diode-emulation high-efficiency mode | Internal comparator replaces controller-based zero-current detection, improving light-load efficiency without firmware changes |
| Exposed top thermal pad | 0.5°C/W junction-to-top thermal resistance enables direct heatsink coupling, lowering junction temperature by up to 25°C vs. bottom-side-only cooling |
| Intel DrMOS V4.0 compliance | Meets strict timing, efficiency, and reporting requirements for server CPU/GPU VRMs including PWM timing margins and thermal flag behavior |
Applications
| CPU Core Voltage Regulation | GPU Power Delivery |
|---|---|
Use Scenario: Regulating 0.8–1.3V core supply for dual-socket Xeon Scalable processors under dynamic 50–60A load steps. IC Role / Device Role / Timing Role: Integrated PowIRstage® serving as complete high-side + low-side + driver + sense stage in multiphase VRM. Use Value: 95% peak efficiency and Body-Braking® reduce output capacitance count by 25% and eliminate need for discrete current-sense resistors. | Use Scenario: Providing 0.9–1.2V VDDC rail to NVIDIA A100 GPU with 40–55A transient demand and <100ns response requirement. IC Role / Device Role / Timing Role: Synchronous buck stage operating at 600kHz with diode-emulation mode active during idle cycles. Use Value: Diode-emulation mode increases light-load efficiency by 8–12% versus forced continuous conduction, extending idle battery life in mobile workstations. |
| DDR Memory Array Supply | High-Density Server VRM Modules |
Use Scenario: Delivering 1.2V/30A to DDR5 memory subsystem with tight voltage tolerance (±3%) and fast load-step recovery. IC Role / Device Role / Timing Role: Single-phase stage in 3+1 phase VRM architecture; REFIN tied to controller's reference for matched scaling. Use Value: Integrated 32.5× current sense gain provides 0.5% full-scale accuracy, enabling precise per-phase current balancing. | Use Scenario: Building compact 4-phase VRM modules for OCP Accelerator Modules (OAM) with height constraint <8mm. IC Role / Device Role / Timing Role: Exposed-top PQFN stage enabling top-side heatsinking to meet 125°C max junction limit at 60A per phase. Use Value: 0.9mm profile and 6mm × 6mm footprint allow 4-phase layouts within 25mm × 25mm board area, reducing overall module size by 35%. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar integrated DrMOS applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IR3550MTRPBF | Same 60A rating and PQFN-32 package but lacks integrated Schottky diode and current sense amplifier; requires external DCR sensing | Lower cost where current monitoring is handled by controller; unsuitable for systems requiring standalone current reporting | Select IR3550 when system controller already implements high-accuracy DCR sensing and top-side cooling is not required |
| IR35203MTRPBF | 60A DrMOS with integrated current sense and 1.2MHz max frequency; uses different pinout and requires 3.3V-only VCC (no 4.5–7V range) | Supports higher switching frequencies for ultra-small magnetics; incompatible pinout prevents drop-in replacement | Select IR35203 when designing new platforms targeting >800kHz operation and controller supports 3.3V VCC bias |
Compared with IR3550MTRPBF and IR35203MTRPBF, the IR3575MTRPBF uniquely combines integrated Schottky diode, self-calibrating current sense amplifier, and 4.5–7V VCC flexibility-enabling simpler, more accurate, and thermally robust CPU/GPU VRMs without sacrificing footprint compatibility.
Availability
IR3575MTRPBF is available at Aetrix Electronics and suitable for CPU core voltage regulation, GPU power delivery, and DDR memory array supplies requiring stable component supply, long-term lifecycle assurance, and validated thermal performance in high-density server platforms.
Supply support for IR3575MTRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs, with leadership in silicon carbide, CoolMOS™, and integrated power stages.
The PowIRstage® product line delivers co-packaged gate drivers and power MOSFETs optimized for high-efficiency, high-current DC-DC conversion in datacenter CPUs, GPUs, and AI accelerators-designed to replace discrete driver+FET solutions with superior thermal, electrical, and layout performance.
FAQ
What is the maximum allowable VIN voltage for continuous operation?
The IR3575MTRPBF supports continuous operation up to 15V VIN, with absolute maximum rating of 25V (VIN–SW). Operation above 15V is not recommended due to increased switching losses and thermal stress on the integrated MOSFETs. The recommended range of 4.5–15V ensures optimal efficiency and reliability across all load conditions and ambient temperatures.
How does the Body-Braking® feature reduce output capacitance requirements?
Body-Braking® activates during load step-down transients by forcing both MOSFETs into high-impedance state via tri-state PWM, allowing the synchronous MOSFET body diode to conduct reverse current and rapidly discharge output capacitors. This cuts voltage droop recovery time by up to 40%, enabling reduction of total output capacitance by 20–30% compared to standard synchronous buck operation.
Can the current sense amplifier be disabled, and what pins must be tied?
Yes-the current sense amplifier is disabled by connecting CSIN− (pin 1), CSIN+ (pin 2), and REFIN (pin 29) to LGND (pin 28), and floating IOUT (pin 30). TGND (pin 31) must also be connected to PGND (pins 4/16/17) in this configuration. VCC bypass capacitance can be reduced to 0.22µF when the amplifier is inactive.
Is IR3575MTRPBF compatible with Intel's DrMOS V4.0 specification?
Yes-IR3575MTRPBF is explicitly compliant with Intel DrMOS V4.0, meeting all mandatory requirements including PWM timing margins (e.g., 38ns tri-state-to-low delay), thermal flag behavior (160°C rising threshold), phase fault detection thresholds (3.3V control FET short), and VCC UVLO hysteresis (≥0.2V). Compliance is verified per Intel document 563267.
IR3575MTRPBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- PowIRstage®
- Package/Case:
- 32-PowerWFQFN
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Output Configuration:
- Half Bridge
- Applications:
- Synchronous Buck Converters, Voltage Regulators
- Interface:
- PWM
- Load Type:
- Inductive
- Technology:
- Power MOSFET
- Rds On (Typ):
- -
- Current - Output / Channel:
- 60A
- Current - Peak Output:
- 90A
- Voltage - Supply:
- 4.5V ~ 7V
- Voltage - Load:
- 4.5V ~ 15V
- Operating Temperature:
- -40°C ~ 125°C (TJ)
- Grade:
- -
- Qualification:
- -
- Features:
- Bootstrap Circuit, Diode Emulation, Status Flag
- Fault Protection:
- Over Temperature, UVLO
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 32-PQFN (6x6)
IR3575MTRPBF FAQ
1.How can I place an order for IR3575MTRPBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IR3575MTRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IR3575MTRPBF reliable?
The price and inventory of IR3575MTRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IR3575MTRPBF is usually 5 days.
3.What payment methods are accepted for IR3575MTRPBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IR3575MTRPBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IR3575MTRPBF?
IR3575MTRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IR3575MTRPBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IR3575MTRPBF?
For technical support, including IR3575MTRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IR3575MTRPBF requirements.
6.How does Aetrix verify that IR3575MTRPBF is sourced from the original manufacturer or authorized distributors?
All IR3575MTRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IR3575MTRPBF meets industry standards.
7.What is the process for return or replacement of IR3575MTRPBF?
All IR3575MTRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IR3575MTRPBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IR3575MTRPBF part is unused and in its original packaging.
Return procedure for IR3575MTRPBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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