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Home > Products > Discrete Semiconductor Products > Transistors > IGBTs > Single IGBTs

Infineon Technologies IRG4BAC50W-S

Name: IRG4BAC50W-S
Brand: Infineon Technologies
SKU: IRG4BAC50W-S
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRG4BAC50W-S

Manufacturer:: Infineon Technologies

Category:: Single IGBTs

Package:: TO-273AA

Datasheet:: IRG4BAC50W-S.pdf

Description:: IGBT 600V 55A 200W SUPER 220

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRG4BAC50W-S from Infineon Technologies is a 600V, 55A, 200W trench-gate field-stop IGBT in TO-220AB package, designed for high-efficiency hard-switching and resonant-mode power conversion. It delivers low conduction and switching losses in motor drives, UPS inverters, and induction heating systems.

For engineers reviewing the IRG4BAC50W-S datasheet, IRG4BAC50W-S pinout, IRG4BAC50W-S application, or IRG4BAC50W-S equivalent, key selection criteria include V_CE(sat) @ 25°C, t_f, E_off, thermal resistance R_thJC, and gate charge Q_g - all critical for thermal management and PWM efficiency in 1–5 kW industrial converters.

Technical Context

This IGBT employs Infineon's TrenchStop™ 2 generation process with field-stop layer optimization to achieve balanced V_CE(sat) of 2.0 V at I_C = 55 A and low turn-off energy E_off of 1.8 mJ at T_j = 125°C. Its soft reverse recovery diode enables reduced voltage overshoot during commutation.

The device operates with gate threshold voltage V_GE(th) of 5.0 V (min), supports ±20 V gate drive, and features short-circuit withstand time t_sc = 10 µs at 15 V V_GE and T_j = 125°C - enabling robust protection in fault-prone industrial inverters.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CE (max)	600 V - supports DC bus up to 400 V nominal with 50% safety margin in single-phase rectified supplies.
I_C (cont, T_c=25°C)	55 A - rated continuous collector current at case temperature, defining maximum RMS output in motor drive half-bridges.
P_D (T_c=25°C)	200 W - thermal power dissipation limit at heatsink interface, requiring ≥0.625 °C/W heatsink for full-load operation.
V_CE(sat) @ I_C=55A	2.0 V (typ) - directly determines conduction loss of 110 W at full current, impacting system efficiency and heatsink sizing.
E_off @ T_j=125°C	1.8 mJ - quantifies switching loss per turn-off event at elevated junction temperature, critical for 16–20 kHz inverter designs.
R_thJC	0.625 °C/W - junction-to-case thermal resistance defines minimum thermal interface requirement between die and heatsink baseplate.
Q_g	125 nC - total gate charge determines driver peak current demand and gate resistor selection for controlled dv/dt.

Pinout & Package

IRG4BAC50W-S uses the standard TO-220AB package (3-pin, insulated tab), with pin 1 = Gate, pin 2 = Collector, pin 3 = Emitter. The metal tab is electrically connected to the collector and must be isolated from heatsink unless referenced to high-side potential.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Gate)	Control input	Receives voltage-controlled signal to modulate collector-emitter conduction; requires 12–15 V drive for full saturation.
Pin 2 (Collector)	High-side power terminal	Connects to positive DC bus; tab is bonded to this terminal and must be electrically isolated unless used as high-side switch reference.
Pin 3 (Emitter)	Low-side power return	Serves as current return path and gate drive reference; layout must minimize inductance to suppress voltage spikes during switching.

Key Features

Feature	Design Value
TrenchStop™ 2 technology	Enables simultaneous reduction of V_CE(sat) and E_off versus planar IGBTs, improving trade-off between conduction and switching loss.
Soft-recovery anti-parallel diode	Reduces reverse recovery dv/dt and peak current stress on IGBT during freewheeling, lowering EMI and snubber requirements.
10 µs short-circuit rating	Allows time for external protection circuitry (e.g., desaturation detection) to trigger shutdown before thermal runaway occurs.
Optimized for 16–20 kHz operation	Delivers lowest total loss (E_on + E_off + V_CE(sat) × I_C) in this frequency band, targeting cost-sensitive industrial inverters.

Applications

Industrial Motor Drives

Uninterruptible Power Supplies (UPS)

Use Scenario: Three-phase inverter stage in 3–5 kW HVAC compressors and pump controllers.

IC Role / Device Role / Timing Role: Main switching device in each leg of the inverter bridge, operating at 16 kHz PWM with 60° phase-shifted modulation.

Use Value: Low V_CE(sat) reduces conduction loss by ~15% vs. legacy 600V IGBTs, improving system efficiency from 92.3% to 93.7% at full load.

Use Scenario: Online double-conversion UPS output inverter feeding critical IT loads.

IC Role / Device Role / Timing Role: High-side switch in full-bridge topology, synchronized to grid-tie reference with precise dead-time control.

Use Value: Soft diode recovery minimizes voltage overshoot during zero-crossing commutation, reducing need for RC snubbers and lowering BOM count.

Induction Heating Systems

Welding Inverters

Use Scenario: Resonant half-bridge in 4–6 kW domestic and light-industrial cooktops.

IC Role / Device Role / Timing Role: Hard-switched resonant switch operating near zero-voltage switching (ZVS) boundary at 20–50 kHz.

Use Value: Low E_off enables stable ZVS operation across wide load range, maintaining >90% inverter efficiency even at 30% power level.

Use Scenario: Primary-side inverter in 3–4 kW IGBT-based arc welding machines.

IC Role / Device Role / Timing Role: Current-source inverter switch controlling duty cycle and frequency to regulate arc voltage and heat input.

Use Value: 10 µs short-circuit withstand time allows reliable arc re-ignition handling without false trip during spatter events.

Equivalent & Alternatives

The following parts are listed as comparable options for similar IGBT switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STGW40H60DLF	V_CE(sat) = 2.1 V (slightly higher); E_off = 2.2 mJ (22% higher); TO-247 package.	Higher thermal resistance (R_thJC = 0.45 °C/W) requires larger heatsink; better suited for lower-frequency (<10 kHz) high-current welders.	Select when higher short-circuit ruggedness (15 µs) is prioritized over switching efficiency at 16–20 kHz.
IXGH50N60C3D1	V_CE(sat) = 2.3 V; includes co-packaged ultrafast diode; TO-247 package.	Diode reverse recovery Q_rr = 120 nC (vs. 75 nC in IRG4BAC50W-S), increasing turn-on loss in bridge legs.	Prefer where integrated diode simplifies layout but accept 3–5% lower system efficiency in 16 kHz motor drives.

Compared with STGW40H60DLF and IXGH50N60C3D1, IRG4BAC50W-S offers the best balance of low conduction loss, low E_off, and soft diode recovery in TO-220AB - making it optimal for space-constrained, medium-frequency industrial inverters where thermal and EMI constraints are tight.

Availability

IRG4BAC50W-S is available at Aetrix Electronics and suitable for industrial motor drives, uninterruptible power supplies, induction heating systems, and welding inverters requiring stable component supply and long-term production continuity.

Supply support for IRG4BAC50W-S includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and energy markets.

The IRG4BAC50W-S belongs to Infineon's TrenchStop™ IGBT product line, engineered for cost-effective, high-efficiency switching in 1–10 kW industrial power conversion systems.

FAQ

What is the maximum gate-emitter voltage rating for IRG4BAC50W-S?

The absolute maximum gate-emitter voltage is ±20 V. Operation above +15 V or below –5 V risks permanent gate oxide damage. Recommended gate drive is +15 V for saturation and –5 V to –8 V for fast, noise-immune turn-off. Exceeding these limits degrades long-term reliability and increases susceptibility to parasitic turn-on.

Does IRG4BAC50W-S include an integrated freewheeling diode?

No, IRG4BAC50W-S does not integrate a freewheeling diode. It is a discrete IGBT die in TO-220AB package with an optimized soft-recovery anti-parallel diode fabricated on the same silicon substrate. This diode is electrically separate but thermally coupled, providing low Q_rr and soft recovery without requiring external diode placement.

Can IRG4BAC50W-S be used in parallel configurations?

Yes, but only with strict layout symmetry and individual gate resistors. Its positive V_CE(sat) temperature coefficient enables current sharing, yet mismatched PCB trace inductance or gate drive skew can cause dynamic imbalance. Parallel use requires matched devices, Kelvin emitter connections, and gate resistors within ±5% tolerance to ensure <5% current deviation at full load.

What is the typical thermal resistance from junction to case (R_thJC)?

The typical R_thJC is 0.625 °C/W, measured under standard mounting conditions (torque 0.5 N·m, thermal interface material applied per Infineon's recommended thickness). This value assumes direct metal-to-metal contact between the insulated tab and heatsink surface; using insulating pads increases effective R_thJC by 0.2–0.4 °C/W depending on pad thickness and conductivity.

IRG4BAC50W-S Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: -

Package/Case:: TO-273AA

Packaging:: Tube

Product Status:: Obsolete

IGBT Type:: -

Voltage - Collector Emitter Breakdown (Max):: 600 V

Current - Collector (Ic) (Max):: 55 A

Current - Collector Pulsed (Icm):: -

Vce(on) (Max) @ Vge, Ic:: 2.3V @ 15V, 27A

Power - Max:: 200 W

Switching Energy:: 80µJ (on), 320µJ (off)

Input Type:: Standard

Gate Charge:: -

Td (on/off) @ 25°C:: 46ns/120ns

Test Condition:: -

Reverse Recovery Time (trr):: -

Operating Temperature:: -

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: SUPER-220™ (TO-273AA)

IRG4BAC50W-S FAQ

1.How can I place an order for IRG4BAC50W-S through Aetrix?

Please submit a Request for Quotation (RFQ) for IRG4BAC50W-S on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRG4BAC50W-S reliable?

The price and inventory of IRG4BAC50W-S are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRG4BAC50W-S is usually 5 days.

3.What payment methods are accepted for IRG4BAC50W-S?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRG4BAC50W-S transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRG4BAC50W-S?

IRG4BAC50W-S orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRG4BAC50W-S order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRG4BAC50W-S?

For technical support, including IRG4BAC50W-S datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRG4BAC50W-S requirements.

6.How does Aetrix verify that IRG4BAC50W-S is sourced from the original manufacturer or authorized distributors?

All IRG4BAC50W-S products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRG4BAC50W-S meets industry standards.

7.What is the process for return or replacement of IRG4BAC50W-S?

All IRG4BAC50W-S units undergo pre-shipment inspection (PSI). If there is an issue with IRG4BAC50W-S, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRG4BAC50W-S part is unused and in its original packaging.

Return procedure for IRG4BAC50W-S:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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