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Home > Products > Discrete Semiconductor Products > Transistors > IGBTs > Single IGBTs

Infineon Technologies IRG4BC10KDPBF

Name: IRG4BC10KDPBF
Brand: Infineon Technologies
SKU: IRG4BC10KDPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRG4BC10KDPBF

Manufacturer:: Infineon Technologies

Category:: Single IGBTs

Package:: TO-220-3

Datasheet:: IRG4BC10KDPBF.pdf

Description:: IGBT 600V 9A 38W TO220AB

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRG4BC10KDPBF from Infineon (formerly International Rectifier) is a 600 V, 9.0 A continuous collector current insulated gate bipolar transistor co-packaged with an ultrafast soft-recovery HEXFRED diode in TO-220AB package. It delivers V_CE(on) = 2.39 V @ 5.0 A/15 V, t_sc = 10 µs short-circuit withstand time at 360 V and 125 °C, and is optimized for motor control inverters requiring robust switching under inductive loads.

For engineers reviewing the IRG4BC10KDPBF datasheet, IRG4BC10KDPBF pinout, IRG4BC10KDPBF application, or IRG4BC10KDPBF equivalent, key selection criteria include its clamped inductive load rating (I_LM = 18 A), low R_θJC (3.3 °C/W IGBT, 7.0 °C/W diode), and integrated diode recovery performance (t_rr = 28–42 ns, Q_rr = 40–60 nC).

Technical Context

This IGBT employs a fourth-generation trench-gate field-stop structure enabling high power density and tight parameter distribution. Its gate threshold voltage (V_GE(th) = 3.0–6.5 V) and negative temperature coefficient of V_CE(on) support stable parallel operation in multi-device modules.

The integrated HEXFRED diode features ultrasoft reverse recovery (di(rec)/dt ≤ 280 A/µs at 25 °C) and minimized EMI generation. Switching behavior is characterized by Q_g = 19–29 nC, E_on = 0.25 mJ, and E_off = 0.14 mJ under standard 480 V, 5.0 A, 15 V gate drive conditions.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CES	600 V - Withstands DC bus voltages up to 480 V RMS in 3-phase motor drives with safety margin.
I_C @ T_C = 25°C	9.0 A - Supports continuous output current in 1–2 kW industrial inverters with heatsink.
t_sc	10 µs - Enables hardware-level short-circuit protection without external desaturation detection circuitry.
V_CE(on)	2.39 V (typ.) @ 5.0 A/15 V - Reduces conduction loss to ~12 W at rated current, improving thermal efficiency.
R_θJC (IGBT)	3.3 °C/W - Allows direct mounting to heatsink with minimal thermal interface resistance for compact designs.
Q_rr	40–60 nC (25–125 °C) - Low reverse recovery charge minimizes diode-induced turn-off losses and voltage overshoot.
E_ts	0.39–0.48 mJ @ 25 °C - Total switching energy enables >20 kHz PWM operation in servo drives with controlled EMI.

Pinout & Package

IRG4BC10KDPBF uses the TO-220AB package with isolated tab, featuring three terminals: Collector (C), Gate (G), and Emitter (E). The metal tab is electrically connected to the collector and must be insulated from heatsink unless system topology requires collector-referenced mounting.

Pin/Terminal	Circuit Role	Design Meaning
Collector (Tab)	Main high-side power terminal	Electrically tied to metal tab; requires insulating washer when mounted to grounded heatsink.
Gate	Control input for IGBT channel	High-impedance MOS-controlled terminal; requires 15 V ±10% drive and <100 Ω series resistance for stable switching.
Emitter	Power return and diode cathode	Common reference for gate drive and current sensing; carries both IGBT emitter and diode anode current.

Key Features

Feature	Design Value
Ultrafast soft-recovery diode	HEXFRED diode with t_rr ≤ 42 ns and di(rec)/dt ≤ 280 A/µs reduces voltage spikes and EMI in inverter leg commutation.
Short-circuit ruggedness	t_sc = 10 µs at 360 V, 125 °C ensures reliable fault handling in motor stall or locked-rotor conditions.
Low gate charge	Q_g = 19–29 nC enables efficient driving with low-power gate drivers (e.g., IR2110, UCC27531) without excessive heat dissipation.
Thermal performance	R_θJC = 3.3 °C/W (IGBT) + 7.0 °C/W (diode) supports high-power density layouts with single heatsink for both devices.

Applications

Industrial Motor Drives

Appliance Inverter Systems

Use Scenario: 3-phase inverter stage in 1.5 kW HVAC compressor drives operating at 16 kHz PWM frequency.

IC Role / Device Role / Timing Role: Main switching device in upper/lower leg of inverter bridge; handles bidirectional current via integrated diode during freewheeling.

Use Value: 10 µs short-circuit rating allows direct hardware fault response; low V_CE(on) reduces thermal stress on heatsink in enclosed cabinet environments.

Use Scenario: Washing machine drum motor inverter with sensorless FOC control and variable-speed spin cycles.

IC Role / Device Role / Timing Role: Half-bridge switch providing precise torque control; HEXFRED diode manages regenerative braking energy during deceleration.

Use Value: Soft diode recovery (Q_rr = 40–60 nC) suppresses audible noise and EMI that would otherwise interfere with onboard MCU and communication interfaces.

UPS Output Stage

Small EV Traction Converters

Use Scenario: Online double-conversion UPS delivering clean 230 V AC output from 400 V DC bus with active PFC front-end.

IC Role / Device Role / Timing Role: Inverter-stage IGBT managing sinusoidal output waveform synthesis; operates in linear region during overload transients.

Use Value: Tight V_GE(th) distribution (3.0–6.5 V) ensures balanced current sharing across paralleled devices in high-reliability backup systems.

Use Scenario: 48 V to 300 V DC-DC boost converter and 3-phase inverter in light electric vehicle (LEV) scooter controller.

IC Role / Device Role / Timing Role: High-efficiency switching element in bidirectional power flow architecture supporting regenerative braking.

Use Value: Integrated diode eliminates need for discrete antiparallel diode, reducing PCB area and solder joint count in space-constrained battery-powered systems.

Equivalent & Alternatives

The following parts are listed as comparable options for similar IGBT with integrated diode applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRG4PH10UD	Same V_CES (600 V), higher I_C (10 A), lower V_CE(on) (2.2 V typ.), but no integrated diode.	Requires external ultrafast diode; better suited for designs needing independent diode optimization.	Select when thermal budget permits separate diode placement and gate drive flexibility is prioritized over integration.
FGA25N120ANTD	Higher V_CES (1200 V), same TO-220AB package, integrated diode, but higher V_CE(on) (3.2 V typ.) and slower switching.	Targeted at 600–800 V DC bus systems where voltage headroom is critical over efficiency.	Select only if system DC link exceeds 550 V; avoid for 400 V motor drives due to excess conduction loss.

Compared with IRG4PH10UD and FGA25N120ANTD, IRG4BC10KDPBF uniquely balances integrated diode functionality, 600 V rating, and 10 µs short-circuit capability-making it optimal for cost-sensitive, space-constrained 1–2 kW motor inverters where reliability under transient faults is non-negotiable.

Availability

IRG4BC10KDPBF is available at Aetrix Electronics and suitable for industrial motor drives, appliance inverter systems, and UPS output stages requiring stable component supply and long-term manufacturing continuity.

Supply support for IRG4BC10KDPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensors for industrial, automotive, and renewable energy markets.

This device belongs to Infineon's legacy IGBT4 family, designed specifically for high-efficiency, high-reliability motor control inverters where integrated diode performance and short-circuit ruggedness are essential.

FAQ

What is the maximum recommended gate resistor value for reliable switching?

The datasheet specifies R_G = 100 Ω for characterization, and gate drive stability requires R_G ≤ 150 Ω to maintain t_d(off) ≤ 150 ns and prevent oscillation. Higher values increase switching losses and risk shoot-through in half-bridge configurations due to slowed turn-off edge.

Can IRG4BC10KDPBF be used in parallel configurations?

Yes-its negative temperature coefficient of V_CE(on) and tight V_GE(th) distribution (3.0–6.5 V) enable stable current sharing. Successful parallel operation requires matched gate drive paths, symmetrical layout, and individual emitter resistors (0.1 Ω) for dynamic balancing.

Is the metal tab electrically isolated from the internal die?

No-the TO-220AB tab is internally connected to the collector terminal. Electrical isolation from the heatsink is mandatory unless the system design intentionally references the collector to chassis ground, requiring certified insulating hardware per IEC 61800-5-1.

What is the peak diode reverse recovery current (I_rr) at 125 °C?

At T_J = 125 °C, I_rr = 3.7–6.7 A (measured at V_R = 200 V, dI_F/dt = 200 A/µs). This value directly impacts snubber sizing and voltage overshoot during hard-commutation events in inverter leg cross-conduction.

IRG4BC10KDPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: -

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

IGBT Type:: -

Voltage - Collector Emitter Breakdown (Max):: 600 V

Current - Collector (Ic) (Max):: 9 A

Current - Collector Pulsed (Icm):: 18 A

Vce(on) (Max) @ Vge, Ic:: 2.62V @ 15V, 5A

Power - Max:: 38 W

Switching Energy:: 250µJ (on), 140µJ (off)

Input Type:: Standard

Gate Charge:: 19 nC

Td (on/off) @ 25°C:: 49ns/97ns

Test Condition:: 480V, 5A, 100Ohm, 15V

Reverse Recovery Time (trr):: -

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220AB

IRG4BC10KDPBF FAQ

1.How can I place an order for IRG4BC10KDPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRG4BC10KDPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRG4BC10KDPBF reliable?

The price and inventory of IRG4BC10KDPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRG4BC10KDPBF is usually 5 days.

3.What payment methods are accepted for IRG4BC10KDPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRG4BC10KDPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRG4BC10KDPBF?

IRG4BC10KDPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRG4BC10KDPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRG4BC10KDPBF?

For technical support, including IRG4BC10KDPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRG4BC10KDPBF requirements.

6.How does Aetrix verify that IRG4BC10KDPBF is sourced from the original manufacturer or authorized distributors?

All IRG4BC10KDPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRG4BC10KDPBF meets industry standards.

7.What is the process for return or replacement of IRG4BC10KDPBF?

All IRG4BC10KDPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRG4BC10KDPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRG4BC10KDPBF part is unused and in its original packaging.

Return procedure for IRG4BC10KDPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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