Infineon Technologies IRG4BC15UD

Overview

IRG4BC15UD from Infineon (formerly International Rectifier) is a 600 V, 14 A insulated gate bipolar transistor co-packaged with an ultrafast soft-recovery antiparallel diode in a TO-220AB package. It delivers V_CE(on) = 2.02 V @ 7.8 A/15 V, t_r = 20 ns, t_f = 83 ns, and Q_g = 23 nC, optimized for 10–30 kHz hard-switching in appliance motor drives and industrial DC-AC inverters.

For engineers reviewing the IRG4BC15UD datasheet, IRG4BC15UD pinout, IRG4BC15UD application, or IRG4BC15UD equivalent, key selection criteria include its positive-only gate drive compatibility, low EMI snubbing requirement, integrated diode reverse recovery performance (t_rr = 28 ns @ 25°C), and thermal resistance R_θJC = 2.7 °C/W for IGBT and 7.0 °C/W for diode.

Technical Context

This IGBT uses a trench-gate field-stop structure enabling low conduction loss and fast switching with controlled tail current. Its co-packaged ultra-soft-recovery diode features t_rr = 28–42 ns and low peak reverse recovery current (I_rr = 2.9–5.2 A), minimizing voltage overshoot and cross-conduction risk in bridge topologies.

The device operates with ±20 V gate voltage rating and exhibits negative temperature coefficient for V_GE(th) (−10 mV/°C) and positive coefficient for V_(BR)CES (+0.63 V/°C), supporting stable parallel operation and predictable breakdown margin across −55°C to +150°C junction range.

Key Specifications

Pinout & Package

IRG4BC15UD uses the industry-standard TO-220AB package with isolated mounting tab, 3-pin single-in-line configuration, and flat greased case-to-sink interface (R_θCS = 0.50 °C/W).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar IGBT switch applications.

Compared with STGW30H65DFB and FGB3040L, IRG4BC15UD offers optimal balance of gate drive simplicity (low Q_g), thermal efficiency (2.7 °C/W), and integration (co-packaged diode), making it ideal for mid-power (<1.5 kW) appliance and industrial inverters where layout space and EMI are critical.

Availability

IRG4BC15UD is available at Aetrix Electronics and suitable for appliance motor inverters, industrial DC-AC inverters, induction cooktop power stages, and HVAC blower drives requiring stable component supply and long-term production continuity.

Supply support for IRG4BC15UD includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, automotive ICs, and security solutions, with global manufacturing and R&D infrastructure.

This device belongs to Infineon's legacy "UltraFast" IGBT family, designed specifically for cost-sensitive, medium-frequency (10–30 kHz) hard-switching applications in white goods and industrial motor controls where integrated diode performance and gate drive simplicity are prioritized.

FAQ

What is the maximum recommended gate resistor value for reliable switching?

The datasheet specifies t_d(off) and t_f measured with R_G = 75 Ω. Using R_G > 100 Ω increases switching time and losses significantly; for 15 kHz operation, R_G = 47–68 Ω is recommended to maintain E_off ≤ 0.26 mJ and minimize thermal stress on the gate oxide.

Can IRG4BC15UD be used in parallel configurations?

Yes-its negative V_GE(th) temperature coefficient (−10 mV/°C) and positive V_(BR)CES coefficient (+0.63 V/°C) promote current sharing. However, matched gate drive impedance, symmetrical PCB layout, and individual emitter resistors (0.1 Ω) are required to ensure balanced dynamic current distribution across paralleled units.

Is the TO-220AB mounting tab electrically isolated?

Yes-the TO-220AB package features an electrically isolated collector tab, allowing direct heatsink mounting without insulating hardware. The isolation voltage is rated to 2500 V RMS per UL 1557, verified by Infineon's internal high-pot testing protocol.

What is the safe operating area (SOA) limitation at 100°C case temperature?

At T_C = 100°C, the SOA is limited to 7.8 A DC or 42 A pulsed (10 µs), with V_CE ≤ 400 V. Exceeding these boundaries risks second breakdown due to localized thermal runaway; derating curves in Figure 12 of the datasheet must be strictly followed for linear-mode or short-circuit conditions.