Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > IGBTs > Single IGBTs

Infineon Technologies IRG4BC15UDPBF

Name: IRG4BC15UDPBF
Brand: Infineon Technologies
SKU: IRG4BC15UDPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: IRG4BC15UDPBF

Manufacturer:: Infineon Technologies

Category:: Single IGBTs

Package:: TO-220-3

Datasheet:: IRG4BC15UDPBF.pdf

Description:: IGBT 600V 14A 49W TO220AB

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:7,147

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

IRG4BC15UDPBF from Infineon Technologies (formerly International Rectifier) is a 600 V, 14 A insulated gate bipolar transistor co-packaged with an ultrafast soft-recovery antiparallel diode in TO-220AB package. It delivers 2.02 V typical V_CE(on) at 7.8 A/15 V_GE, 28 ns diode reverse recovery time at 25 °C, and 0.50 mJ total switching loss at 480 V/7.8 A - optimized for 10–30 kHz hard-switching in appliance motor drives and industrial SMPS.

For engineers reviewing the IRG4BC15UDPBF datasheet, IRG4BC15UDPBF pinout, IRG4BC15UDPBF application, or IRG4BC15UDPBF equivalent, key selection criteria include its positive-only gate drive compatibility, low EMI snubbing requirement, integrated diode softness (28–57 ns trr), junction-to-case thermal resistance (2.7 °C/W IGBT, 7.0 °C/W diode), and 150 °C max operating temperature.

Technical Context

This IGBT employs a trench-gate field-stop structure with monolithic integration of an ultra-soft-recovery freewheeling diode, enabling clean turn-off with minimal voltage overshoot and reduced di/dt-induced EMI. Its gate threshold voltage (3.0–6.0 V) and negative temperature coefficient (−10 mV/°C) support stable parallel operation across temperature.

Switching behavior is characterized by 17 ns turn-on delay and 160–240 ns turn-off delay (RG = 75 Ω), with total switching loss rising from 0.50 mJ at 25 °C to 0.76 mJ at 150 °C - reflecting strong thermal robustness for sustained high-frequency operation in convection-cooled systems.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CES	600 V - supports 400 V AC input rectified bus with 50 % safety margin for industrial mains applications.
I_C @ T_C = 100 °C	7.8 A - defines continuous current capability under realistic heatsink-limited thermal conditions.
V_CE(on) typ.	2.02 V @ 7.8 A / 15 V_GE - determines conduction loss of 15.8 W at rated current, critical for thermal design.
trr (diode)	28–57 ns - enables low-loss, low-noise commutation in bridge topologies without external snubbers.
R_θJC (IGBT)	2.7 °C/W - allows direct thermal path modeling from junction to heatsink for reliable derating.
Q_g	23–35 nC - sets minimum gate driver peak current (≥0.46 A for 50 ns rise) and drive power budget.
E_ts	0.50–0.76 mJ - quantifies total energy dissipated per switching cycle, defining max frequency before thermal runaway.

Pinout & Package

IRG4BC15UDPBF uses the industry-standard TO-220AB package with isolated tab (electrically connected to emitter), 3-pin through-hole mounting, and 1.1 N·m recommended screw torque. The case is electrically tied to the emitter terminal, requiring insulating hardware when mounted to grounded heatsinks.

Pin/Terminal	Circuit Role	Design Meaning
Collector (Tab)	Main power output terminal	Electrically connected to metal tab; must be isolated from heatsink unless system ground reference permits.
Gate	Control input	High-impedance MOS-controlled terminal; requires ≤±20 V drive and low-inductance layout to suppress oscillation.
Emitter	Power return & reference node	Common return for IGBT and diode; serves as local ground reference for gate driver supply and sense circuitry.

Key Features

Feature	Design Value
Ultrafast soft-recovery co-packaged diode	trr = 28 ns (25 °C), Irr = 2.9 A - eliminates need for external snubbers in DC link freewheeling.
Positive-only gate drive	V_GE(th) = 3.0–6.0 V, no negative bias required - simplifies gate driver IC selection and PCB layout.
Low R_θJC IGBT die	2.7 °C/W - enables higher power density in space-constrained industrial inverters and UPS modules.
Lead-free and RoHS-compliant	Meets JEDEC J-STD-020 reflow profile - supports automated assembly without lead contamination risk.
High noise immunity	100 µA I_GES max at ±20 V - ensures stable turn-off during EFT/burst events in noisy factory environments.

Applications

Motor Drive Inverter Stage

Industrial SMPS Primary Switch

Use Scenario: 3-phase BLDC inverter for washing machine drum control, operating at 16 kHz PWM with 50 % duty cycle.

IC Role / Device Role / Timing Role: High-side/low-side switching element in half-bridge configuration; handles 7.8 A RMS load current with 480 V DC bus.

Use Value: Soft diode recovery minimizes voltage spikes during commutation, reducing filter capacitor stress and audible noise in appliance enclosures.

Use Scenario: Forward converter primary switch in 500 W industrial power supply with 400 V DC input.

IC Role / Device Role / Timing Role: Main power switch cycling at 25 kHz; conducts 14 A peak during on-time, blocks 600 V during off-time.

Use Value: 2.02 V V_CE(on) limits conduction loss to <16 W, enabling natural convection cooling without forced airflow.

UPS Half-Bridge Output Stage

Induction Heating Resonant Inverter

Use Scenario: Online UPS output inverter delivering 230 V AC sine wave via SPWM, with 10 ms overload capability.

IC Role / Device Role / Timing Role: Low-side switch in full-bridge topology; sustains 42 A pulsed current during short-circuit fault conditions.

Use Value: I_CM = 42 A and T_J(max) = 150 °C allow brief overloads without desaturation, improving system fault tolerance.

Use Scenario: Series-resonant inverter driving 20 kHz induction coil in metal hardening equipment.

IC Role / Device Role / Timing Role: Hard-switched resonant switch with zero-voltage turn-on assisted by diode soft recovery.

Use Value: 28 ns trr and 280 A/µs di(rec)/dt enable clean zero-current turn-off, reducing switching losses by >15 % vs standard fast diodes.

Equivalent & Alternatives

The following parts are listed as comparable options for similar IGBT + integrated diode applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRG4PH40UD	600 V, 20 A, TO-247 package, 1.95 V V_CE(on), 35 ns trr	Higher current rating and larger package; better suited for >1 kW designs with active cooling	Select when >10 A continuous current or lower conduction loss is required; requires larger PCB footprint and heatsink interface.
FGA25N120ANTD	1200 V, 25 A, TO-3P package, 2.3 V V_CE(on), 120 ns trr	Higher voltage rating but slower diode; intended for 600–800 V DC bus systems like solar string inverters	Select only for 1200 V systems; avoid in 400–480 V applications due to higher conduction loss and EMI risk from longer trr.

Compared with IRG4PH40UD and FGA25N120ANTD, IRG4BC15UDPBF offers optimal balance of cost, thermal performance (2.7 °C/W), and soft switching (28 ns trr) for sub-1 kW industrial and white goods applications where TO-220AB form factor and positive-only gate drive are mandatory.

Availability

IRG4BC15UDPBF is available at Aetrix Electronics and suitable for motor drive inverters, industrial switched-mode power supplies, uninterruptible power systems, and induction heating controls requiring stable component supply and long-term manufacturing continuity.

Supply support for IRG4BC15UDPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and renewable energy markets.

This device belongs to Infineon's legacy "UltraFast" IGBT family, designed specifically for cost-sensitive, medium-power hard-switching applications where integrated soft diodes reduce system-level EMI filtering and simplify gate drive architecture.

FAQ

Is IRG4BC15UDPBF pin-compatible with older IRG4BC15U variants?

Yes - IRG4BC15UDPBF maintains identical TO-220AB pinout, thermal pad connection, and electrical specifications versus non-Pb-free IRG4BC15U. The "PbF" suffix denotes lead-free termination only; no functional or mechanical changes affect drop-in replacement in existing designs.

What gate resistor value is recommended for 25 kHz operation?

A 75 Ω gate resistor is validated in the datasheet for 25 kHz switching at 480 V/7.8 A, yielding 160–240 ns t_d(off) and 0.50 mJ E_ts. Lower values (e.g., 33 Ω) reduce switching time but increase EMI; higher values (e.g., 150 Ω) improve EMI but raise losses - always verify with actual board layout parasitics.

Can the integrated diode replace an external ultrafast diode in a PFC boost stage?

No - the co-packaged diode is optimized for freewheeling in bridge legs, not PFC boost operation. Its 4.0 A continuous rating and 16 A peak forward current are insufficient for typical PFC currents, and its reverse recovery charge (40–110 nC) exceeds requirements for high-efficiency boost diodes.

Does the TO-220AB tab require electrical isolation from the heatsink?

Yes - the metal tab is internally connected to the emitter terminal. Mounting directly to a grounded heatsink creates a short between emitter and system ground. Use isolating shoulder washers and thermal pads rated for ≥1 kV dielectric strength to maintain safe creepage and clearance.

IRG4BC15UDPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: -

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

IGBT Type:: -

Voltage - Collector Emitter Breakdown (Max):: 600 V

Current - Collector (Ic) (Max):: 14 A

Current - Collector Pulsed (Icm):: 42 A

Vce(on) (Max) @ Vge, Ic:: 2.4V @ 15V, 7.8A

Power - Max:: 49 W

Switching Energy:: 240µJ (on), 260µJ (off)

Input Type:: Standard

Gate Charge:: 23 nC

Td (on/off) @ 25°C:: 17ns/160ns

Test Condition:: 480V, 7.8A, 75Ohm, 15V

Reverse Recovery Time (trr):: 28 ns

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220AB

IRG4BC15UDPBF FAQ

1.How can I place an order for IRG4BC15UDPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRG4BC15UDPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRG4BC15UDPBF reliable?

The price and inventory of IRG4BC15UDPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRG4BC15UDPBF is usually 5 days.

3.What payment methods are accepted for IRG4BC15UDPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRG4BC15UDPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRG4BC15UDPBF?

IRG4BC15UDPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRG4BC15UDPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRG4BC15UDPBF?

For technical support, including IRG4BC15UDPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRG4BC15UDPBF requirements.

6.How does Aetrix verify that IRG4BC15UDPBF is sourced from the original manufacturer or authorized distributors?

All IRG4BC15UDPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRG4BC15UDPBF meets industry standards.

7.What is the process for return or replacement of IRG4BC15UDPBF?

All IRG4BC15UDPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRG4BC15UDPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRG4BC15UDPBF part is unused and in its original packaging.

Return procedure for IRG4BC15UDPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-08-18 Operational Amplifier (Op Amp): Basics, Configurations, Feedback and Applications

Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…

2026-08-14 Jumper Cables: How to Use, Connect and Choose Them Safely

Jumper cables guide covering safe connection order, red and black clamp placement, final ground connection, cable gauge, length, clamp quality, copper vs CCA cables, jump starter comparison and battery…

2026-08-11 LDO Regulator: Dropout Voltage, Noise, PSRR and Power Dissipation

LDO regulator guide covering low dropout voltage, power dissipation, thermal design, PSRR, output noise, capacitor stability, adjustable LDO circuits, LDO vs buck converter and datasheet selection chec…

2026-08-06 Conditional Access Module: CAM, CI/CI+ and DVB Security

Conditional Access Module guide covering CAM meaning, CI/CI+ interface, smart card authorization, DVB security workflow, TV and set-top box compatibility, internal electronics, ESD protection, connecto…

2026-08-03 Electronic Component Obsolescence: EOL Risks, Replacement Options and Last-Time Buy Strategy

Guide to electronic component obsolescence covering EOL risk, PCN/PDN notices, last-time buy planning, replacement options, form-fit-function validation, counterfeit risk and BOM lifecycle management.

2026-07-29 18650 Battery: Voltage, Capacity, Charging and Pack Design

18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…

2026-07-27 Hall Effect Sensor: Working Principle, Types, Circuits and Applications

Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…

2026-07-20 Product Change Notification (PCN) in Electronic Components: Meaning and Supply Chain Response

Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…

2026-07-19 Blend Door Actuator: Symptoms, Location, Reset and Replacement Guide

A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…

2026-07-17 Raspberry Pi Alternatives: Chip-Level Comparison, Compatibility and Replacement Guide

Engineering guide to Raspberry Pi alternatives, covering chip-level differences, Orange Pi, ROCK, Jetson, Banana Pi, NanoPi, Compute Module, Pico, GPIO, camera, HAT compatibility, and replacement risks…