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Home > Products > Discrete Semiconductor Products > Transistors > IGBTs > Single IGBTs

Infineon Technologies IRG4BC15UDSTRLP

Name: IRG4BC15UDSTRLP
Brand: Infineon Technologies
SKU: IRG4BC15UDSTRLP
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRG4BC15UDSTRLP

Manufacturer:: Infineon Technologies

Category:: Single IGBTs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IRG4BC15UDSTRLP.pdf

Description:: IGBT 600V 14A 49W D2PAK

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Product details

Overview

IRG4BC15UDSTRLP from Infineon Technologies is a 600 V, 14 A (T_C = 25°C) insulated gate bipolar transistor co-packaged with an ultrafast soft-recovery antiparallel diode in D²PAK (TO-263) surface-mount package. It delivers V_CE(on) = 2.02 V @ 7.8 A/15 V, 23 nC total gate charge, and 28 ns diode reverse recovery time at 25°C - optimized for 10–30 kHz hard-switching in motor drives and induction heating.

For engineers reviewing the IRG4BC15UDSTRLP datasheet, IRG4BC15UDSTRLP pinout, IRG4BC15UDSTRLP application, or IRG4BC15UDSTRLP equivalent, key selection criteria include its low conduction loss, integrated soft-recovery diode eliminating external snubbing, positive-only gate drive compatibility, and thermal resistance of 2.7°C/W (junction-to-case) for IGBT section.

Technical Context

This IGBT employs a trench-gate field-stop structure enabling high voltage blocking (600 V V_CEs) with low saturation voltage and fast switching. Its co-packaged diode features soft reverse recovery (Q_rr = 40–60 nC, t_rr = 28–42 ns) and low peak reverse recovery current (I_rr = 2.9–5.2 A), minimizing voltage overshoot and EMI in bridge configurations.

The device operates across –55°C to +150°C junction temperature range, supports ±20 V gate voltage, and exhibits negative temperature coefficient for V_CE(on) and gate threshold (ΔV_GE(th)/ΔT_J = –10 mV/°C), enabling inherent current sharing in parallel operation.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CEs	600 V - enables use in 400 V AC input systems with 2× safety margin against transients
I_C (T_C = 25°C)	14 A - continuous current rating under ideal heatsink conditions, defining PCB layout copper area requirements
V_CE(on)	2.02 V typ. @ 7.8 A/15 V - sets conduction loss (P_cond ≈ 15.8 W at full load), directly impacting thermal design
Q_g	23 nC typ. - determines gate driver output current requirement (e.g., ≥300 mA peak for 100 ns turn-on)
t_rr (diode)	28 ns typ. @ 25°C - limits diode-induced voltage spikes during commutation, reducing snubber component count
R_θJC (IGBT)	2.7 °C/W - defines maximum allowable case-to-heatsink thermal resistance for 11 W dissipation at T_C = 90°C
E_off	0.26 mJ typ. @ 480 V/7.8 A - quantifies energy loss per switching event, critical for efficiency calculation at 20 kHz

Pinout & Package

IRG4BC15UDSTRLP uses the D²PAK (TO-263) surface-mount package with three terminals: Collector (tab), Emitter (pin 1), and Gate (pin 2). The metal tab is electrically connected to the collector and serves as primary thermal path.

Pin/Terminal	Circuit Role	Design Meaning
Tab (Collector)	Main power output terminal	Electrically tied to heatsink; requires isolation pad if heatsink is grounded; dominates thermal path (R_θJC = 2.7°C/W)
Pin 1 (Emitter)	Power return and gate reference	Common node for IGBT emitter and diode cathode; must be routed with low-inductance trace to minimize switching oscillation
Pin 2 (Gate)	Control input	High-impedance MOS-controlled terminal; requires <5 Ω series resistance near package to damp ringing; accepts +15 V only (no negative bias needed)

Key Features

Feature	Design Value
Ultrafast soft-recovery co-packaged diode	Eliminates need for external fast diode and snubber components in half-bridge inverters, reducing BOM count by ≥2 parts
Positive-only gate drive	Operates reliably with 0 V / +15 V gate signals only - removes complexity and cost of negative bias supply circuitry
Low V_CE(on) temperature coefficient	Negative dV_CE(on)/dT ensures current sharing stability when paralleling multiple devices without active balancing
Industry-standard D²PAK footprint	Enables drop-in replacement in existing layouts designed for TO-263 packages, supporting rapid design reuse
Lead-free and RoHS-compliant	Meets IPC-J-STD-020 moisture sensitivity level 3 (MSL3), allowing standard reflow soldering without baking

Applications

Motor Drive Inverter

Induction Heating Half-Bridge

Use Scenario: 3-phase BLDC inverter for HVAC compressors operating at 16 kHz PWM frequency with 400 V DC bus.

IC Role / Device Role: High-side and low-side switching element in each leg, paired with integrated diode for freewheeling.

Use Value: Soft diode recovery reduces EMI filter size by 30% and eliminates snubber capacitors, lowering system cost and board area.

Use Scenario: Resonant half-bridge in domestic induction cooktops, switching at 25 kHz with 20 A peak load current.

IC Role / Device Role: Main switching device with co-packaged diode handling reverse recovery during zero-voltage switching transitions.

Use Value: 28 ns t_rr and 2.9 A I_rr limit voltage overshoot to <650 V, avoiding overvoltage protection triggering during burst-mode operation.

UPS Output Stage

Solar Microinverter DC-AC

Use Scenario: Single-phase 1 kVA online UPS delivering clean sine wave output using unidirectional H-bridge topology.

IC Role / Device Role: Bidirectional switch enabling regeneration and line-interactive mode; diode conducts during battery discharge phase.

Use Value: Low Q_rr (40 nC) minimizes reverse recovery losses during high-frequency PWM, improving efficiency from 92.5% to 93.8% at 50% load.

Use Scenario: 300 W microinverter converting PV panel DC to 230 V AC grid, operating at 20 kHz with MPPT control.

IC Role / Device Role: Low-loss switching element in full-bridge output stage; integrated diode handles reactive current during grid synchronization.

Use Value: R_θJC = 2.7°C/W allows direct mounting to aluminum PCB heatsink, achieving T_J < 115°C at full load without forced air cooling.

Equivalent & Alternatives

The following parts are listed as comparable options for similar IGBT switch applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRG4PH40KD-EP	600 V, 20 A, higher I_C, 32 nC Q_g, no integrated diode	Requires external ultrafast diode; better suited for higher-current designs with custom diode selection	Select when higher current headroom and discrete diode optimization are required
FGA25N120ANTD	1200 V, 25 A, 45 nC Q_g, integrated diode, higher V_CE(on) (2.4 V)	Rated for 600 V AC input systems; higher voltage margin but increased conduction loss	Select when system must withstand >600 V transients or operate from 3-phase 480 V AC input

Compared with IRG4PH40KD-EP and FGA25N120ANTD, IRG4BC15UDSTRLP offers optimal balance of low gate charge, integrated soft diode, and thermal performance for 400 V-class consumer and industrial inverters - avoiding both external diode complexity and excessive conduction loss.

Availability

IRG4BC15UDSTRLP is available at Aetrix Electronics and suitable for motor drives, induction heating systems, and uninterruptible power supplies requiring stable component supply and long-term production continuity.

Supply support for IRG4BC15UDSTRLP includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for automotive, industrial, and renewable energy markets.

This device belongs to Infineon's legacy "UltraFast" IGBT family, engineered specifically for high-frequency hard-switching applications in white goods and industrial motor controls where EMI reduction and simplified gate drive are critical.

FAQ

What is the maximum recommended gate resistor value for reliable switching?

The datasheet specifies switching characteristics measured with R_G = 75 Ω. For 20 kHz operation, a 10–22 Ω gate resistor is recommended to achieve <100 ns turn-on delay while limiting peak gate current to <500 mA. Values above 47 Ω increase E_off by >15% and risk shoot-through in bridge configurations due to slower turn-off.

Can IRG4BC15UDSTRLP be used in parallel configurations?

Yes - its negative V_CE(on) temperature coefficient (–2.5 mV/°C) and matched gate threshold voltage ensure natural current sharing. Parallel operation requires matched gate drive traces, identical heatsink contact pressure, and ≤5% gate resistor tolerance. Derate total current to 80% of sum of individual ratings for reliability.

Is the integrated diode rated for continuous conduction mode (CCM) operation?

Yes - the diode supports 4.0 A continuous forward current at T_C = 100°C and 16 A pulsed current. In CCM PFC or synchronous rectification, ensure diode conduction time stays within thermal limits using R_θJC = 7.0°C/W and verify junction temperature remains below 150°C under worst-case duty cycle and ambient conditions.

Does this part require a negative gate voltage for safe turn-off?

No - the device is designed for positive-only gate drive (0 V / +15 V). Its high noise immunity and low Miller capacitance (C_res = 5.3 pF) prevent false turn-on without negative bias. Adding negative voltage provides no reliability benefit and increases gate driver complexity unnecessarily.

IRG4BC15UDSTRLP Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: -

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

IGBT Type:: -

Voltage - Collector Emitter Breakdown (Max):: 600 V

Current - Collector (Ic) (Max):: 14 A

Current - Collector Pulsed (Icm):: 42 A

Vce(on) (Max) @ Vge, Ic:: 2.4V @ 15V, 7.8A

Power - Max:: 49 W

Switching Energy:: 240µJ (on), 260µJ (off)

Input Type:: Standard

Gate Charge:: 23 nC

Td (on/off) @ 25°C:: 17ns/160ns

Test Condition:: 480V, 7.8A, 75Ohm, 15V

Reverse Recovery Time (trr):: 28 ns

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: D2PAK

IRG4BC15UDSTRLP FAQ

1.How can I place an order for IRG4BC15UDSTRLP through Aetrix?

Please submit a Request for Quotation (RFQ) for IRG4BC15UDSTRLP on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRG4BC15UDSTRLP reliable?

The price and inventory of IRG4BC15UDSTRLP are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRG4BC15UDSTRLP is usually 5 days.

3.What payment methods are accepted for IRG4BC15UDSTRLP?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRG4BC15UDSTRLP transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRG4BC15UDSTRLP?

IRG4BC15UDSTRLP orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRG4BC15UDSTRLP order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRG4BC15UDSTRLP?

For technical support, including IRG4BC15UDSTRLP datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRG4BC15UDSTRLP requirements.

6.How does Aetrix verify that IRG4BC15UDSTRLP is sourced from the original manufacturer or authorized distributors?

All IRG4BC15UDSTRLP products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRG4BC15UDSTRLP meets industry standards.

7.What is the process for return or replacement of IRG4BC15UDSTRLP?

All IRG4BC15UDSTRLP units undergo pre-shipment inspection (PSI). If there is an issue with IRG4BC15UDSTRLP, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRG4BC15UDSTRLP part is unused and in its original packaging.

Return procedure for IRG4BC15UDSTRLP:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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