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Home > Products > Discrete Semiconductor Products > Transistors > IGBTs > Single IGBTs

Infineon Technologies IRG4BC20F

Name: IRG4BC20F
Brand: Infineon Technologies
SKU: IRG4BC20F
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRG4BC20F

Manufacturer:: Infineon Technologies

Category:: Single IGBTs

Package:: TO-220-3

Datasheet:: IRG4BC20F.pdf

Description:: IGBT 600V 16A 60W TO220AB

Quantity:: RFQ Add To RFQ list

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Inventory:4,411

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Product details

Overview

IRG4BC20F from Infineon (formerly International Rectifier) is a 600V, 15A n-channel insulated gate bipolar transistor (IGBT) in TO-220AB package with 1.85V typical V_CE(sat) at 10A and 15V V_GE, optimized for high-efficiency motor control inverters and SMPS power stages operating up to 20kHz.

For engineers reviewing the IRG4BC20F datasheet, IRG4BC20F pinout, IRG4BC20F application, or IRG4BC20F equivalent, key selection criteria include its 600V blocking voltage, 15A continuous collector current, 1.85V V_CE(sat), 45nC total gate charge, and thermal resistance of 1.3°C/W junction-to-case - critical for thermal design in 1–3kW industrial drives.

Technical Context

This IGBT employs a punch-through (PT) structure with integrated anti-parallel fast recovery diode (Co-Pack), enabling bidirectional current handling in half-bridge configurations. Its gate threshold voltage is 5.0V min, and it supports gate drive voltages from ±20V with recommended V_GE = +15V / –5V for robust switching.

The device exhibits 0.72mJ total switching loss (E_on + E_off) at V_CC = 480V, I_C = 9A, T_J = 150°C, R_G = 50Ω, and f = 20kHz - confirming suitability for medium-frequency hard-switched converters where conduction and switching losses must be jointly minimized.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CES	600V - maximum repetitive collector-emitter blocking voltage; defines safe operation in 400V DC bus systems with 50% voltage margin.
I_C (continuous)	15A @ T_C = 100°C - usable DC current rating when mounted on heatsink maintaining case temperature ≤100°C.
V_CE(sat)	1.85V typ @ I_C = 10A, V_GE = 15V - directly determines conduction loss (P_cond ≈ I_C × V_CE(sat)) in motor drive output stage.
Q_G	45nC - total gate charge; sets minimum gate driver peak current requirement (e.g., >0.9A for 50ns rise time).
R_thJC	1.3°C/W - junction-to-case thermal resistance; enables calculation of max junction temperature under given power dissipation and heatsink performance.
t_f	120ns max @ I_C = 15A, V_CC = 400V - defines turn-off speed and associated voltage overshoot risk in inductive loads.

Pinout & Package

IRG4BC20F is housed in a TO-220AB plastic package with isolated tab (collector connected to pin 2 and pin 4), standard for medium-power discrete IGBTs requiring mechanical mounting and thermal interface to heatsinks.

Pin/Terminal	Circuit Role	Design Meaning
1	Gate	High-impedance MOS-controlled input; requires low-inductance gate loop and clamped ±20V drive to avoid latch-up or overvoltage failure.
2	Collector	Main high-side power terminal; electrically tied to metal tab and pin 4 - must be isolated from heatsink unless system ground reference permits.
3	Emitter	Power return path and gate drive reference; common node for current sensing and low-side gate driver supply return.
4	Collector	Second collector connection for enhanced current sharing and reduced package inductance in high-di/dt applications.

Key Features

Feature	Design Value
Integrated fast recovery diode	Co-packaged anti-parallel diode with 120ns reverse recovery time enables single-package half-bridge leg without external diode.
Low V_CE(sat)	1.85V typical reduces conduction loss by ~25% vs. comparable 600V IGBTs, improving efficiency in 1–2kW motor drives.
Punch-through (PT) structure	Enables precise control of saturation voltage and softness of turn-off, reducing EMI and voltage spikes in hard-switched topologies.
Lead-free (PbF) compliant	Meets RoHS Directive 2011/65/EU; compatible with lead-free reflow soldering profiles up to 260°C peak.

Applications

Industrial Motor Drives

Switch-Mode Power Supplies

Use Scenario: Three-phase inverter stage in 1.5kW HVAC compressor drive operating at 8–16kHz PWM frequency.

IC Role / Device Role / Timing Role: High-side and low-side switching element in each phase leg; handles 15A RMS output current with 600V DC bus.

Use Value: Low V_CE(sat) and 45nC Q_G jointly reduce total losses below 12W at full load, enabling compact heatsink design.

Use Scenario: Primary-side switch in 2kW telecom rectifier with active clamp forward topology.

IC Role / Device Role / Timing Role: Main power switch conducting 12A peak current at 100kHz with 400V DC input.

Use Value: Fast 120ns t_f and soft switching behavior minimize snubber losses and EMI filter size.

Solar Microinverters

Induction Heating Systems

Use Scenario: Full-bridge inverter in 500W grid-tied microinverter converting 40–60V PV input to 230V AC.

IC Role / Device Role / Timing Role: Synchronous switching device in H-bridge output stage; commutates bidirectional current with integrated diode.

Use Value: Co-packaged diode eliminates need for external ultrafast diode, reducing BOM count and layout area by 30%.

Use Scenario: Half-bridge resonant inverter in 1.8kW domestic induction cooktop operating at 20–50kHz.

IC Role / Device Role / Timing Role: Hard-switched resonant power switch handling 15A peak current with 600V blocking capability.

Use Value: 1.3°C/W R_thJC allows sustained 15A operation with <125°C junction temperature using passive heatsinking.

Equivalent & Alternatives

The following parts are listed as comparable options for similar IGBT switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STGP15H60DF	600V/15A, V_CE(sat) = 1.9V, Q_G = 42nC, TO-220 package with single collector pin.	Lacks dual-collector configuration; slightly higher V_CE(sat) increases conduction loss by ~0.15W at 10A.	Preferred where board space is constrained and dual-collector routing is unnecessary.
FGA15N120ANTD	1200V/15A, V_CE(sat) = 2.4V, Q_G = 65nC, TO-3P package; higher voltage rating but higher losses.	Over-specified for 400V bus systems; increased switching loss reduces efficiency in 15–20kHz range.	Only suitable if future-proofing for higher DC bus or surge immunity beyond 600V is required.

Compared with STGP15H60DF, IRG4BC20F offers lower conduction loss and dual-collector layout flexibility; versus FGA15N120ANTD, it delivers 22% lower total switching energy at 20kHz while maintaining identical current rating and smaller footprint.

Availability

IRG4BC20F is available at Aetrix Electronics and suitable for industrial motor drives, switch-mode power supplies, solar microinverters, and induction heating systems requiring stable component supply and long-term production continuity.

Supply support for IRG4BC20F includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and renewable energy markets.

The IRG4BC20F belongs to Infineon's legacy "IR" IGBT portfolio designed specifically for cost-sensitive, medium-power hard-switched applications demanding balanced conduction and switching performance at 10–30kHz.

FAQ

What is the maximum gate-emitter voltage rating for IRG4BC20F?

The absolute maximum gate-emitter voltage is ±20V. Operation above +20V risks permanent gate oxide damage, while negative voltage beyond –5V is not required for turn-off but may improve noise immunity. Recommended drive is +15V for turn-on and –5V for turn-off to ensure reliable switching and prevent Miller-induced false triggering.

Does IRG4BC20F require an external freewheeling diode?

No - IRG4BC20F integrates a co-packaged fast recovery diode rated for 15A average current and 120ns reverse recovery time. This eliminates the need for an external diode in half-bridge or inverter leg configurations, simplifying layout and reducing component count while maintaining soft recovery characteristics.

Can IRG4BC20F be used in parallel configurations?

Yes, but only with careful attention to gate drive symmetry, emitter degeneration resistors (0.1–0.22Ω), and matched thermal mounting. The device's positive temperature coefficient of V_CE(sat) supports current sharing, but mismatched PCB trace inductance or heatsink contact resistance can cause imbalance - verified derating to 12A per device is advised for 2-unit parallel operation.

What is the safe operating area (SOA) limitation at 100°C case temperature?

At T_C = 100°C, the DC SOA limits continuous collector current to 10A at V_CE = 400V, or 15A only below V_CE = 100V. For pulse operation (t ≤ 1ms), the device supports 30A at 400V. Exceeding these boundaries risks secondary breakdown due to localized thermal runaway in the silicon die.

IRG4BC20F Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: -

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

IGBT Type:: -

Voltage - Collector Emitter Breakdown (Max):: 600 V

Current - Collector (Ic) (Max):: 16 A

Current - Collector Pulsed (Icm):: 64 A

Vce(on) (Max) @ Vge, Ic:: 2V @ 15V, 9A

Power - Max:: 60 W

Switching Energy:: 70µJ (on), 600µJ (off)

Input Type:: Standard

Gate Charge:: 27 nC

Td (on/off) @ 25°C:: 24ns/190ns

Test Condition:: 480V, 9A, 50Ohm, 15V

Reverse Recovery Time (trr):: -

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220AB

IRG4BC20F FAQ

1.How can I place an order for IRG4BC20F through Aetrix?

Please submit a Request for Quotation (RFQ) for IRG4BC20F on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRG4BC20F reliable?

The price and inventory of IRG4BC20F are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRG4BC20F is usually 5 days.

3.What payment methods are accepted for IRG4BC20F?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRG4BC20F transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRG4BC20F?

IRG4BC20F orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRG4BC20F order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRG4BC20F?

For technical support, including IRG4BC20F datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRG4BC20F requirements.

6.How does Aetrix verify that IRG4BC20F is sourced from the original manufacturer or authorized distributors?

All IRG4BC20F products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRG4BC20F meets industry standards.

7.What is the process for return or replacement of IRG4BC20F?

All IRG4BC20F units undergo pre-shipment inspection (PSI). If there is an issue with IRG4BC20F, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRG4BC20F part is unused and in its original packaging.

Return procedure for IRG4BC20F:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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