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Infineon Technologies IRG4BC20FD

Part No.:
IRG4BC20FD
Manufacturer:
Infineon Technologies
Category:
Single IGBTs
Package:
TO-220-3
Datasheet:
AetrixIRG4BC20FD.pdf
Description:
IGBT 600V 16A 60W TO220AB
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:6,494

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Product details

Overview

IRG4BC20FD from Infineon Technologies is a 600 V, 15 A n-channel IGBT with integrated fast recovery anti-parallel diode in TO-220AB package, rated for 100 W continuous power dissipation at TC = 25 °C, featuring 180 nC total gate charge and 2.0 Ω typical gate resistance - used in motor control inverters and UPS DC-AC stages.

For engineers reviewing the IRG4BC20FD datasheet, IRG4BC20FD pinout, IRG4BC20FD application, or IRG4BC20FD equivalent, key selection criteria include its 600 V VCE(max), 15 A IC(cont), 180 nC QG, 2.0 Ω RG, and integrated diode reverse recovery performance (trr = 120 ns @ IF = 16 A, TJ = 125 °C).

Technical Context

This IGBT employs a non-punch-through (NPT) silicon structure with field-stop technology, enabling balanced conduction and switching losses. It integrates a co-packaged ultrafast soft-recovery diode with 120 ns reverse recovery time and 16 A peak reverse recovery current at 125 °C.

The device operates with 15 V gate drive (VGE = ±20 V max), supports 480 V DC bus applications, and delivers 9.0 A collector current at VCE = 400 V with 15 V gate bias under pulsed conditions - optimized for hard-switched 20–50 kHz industrial inverters.

Key Specifications

ParameterValue and Actual Design Meaning
VCE(max)600 V - supports 480 V DC-link systems with 25% voltage margin for transient spikes
IC(cont) @ TC=25°C15 A - continuous collector current rating at case temperature of 25 °C
PD(max) @ TC=25°C100 W - maximum power dissipation with heatsink at 25 °C case temperature
QG(tot)180 nC - total gate charge determines required gate driver peak current and switching speed trade-off
trr (diode)120 ns @ IF = 16 A, TJ = 125 °C - defines diode reverse recovery energy and EMI generation in bridge legs
RG(int)2.0 Ω - internal gate resistance influences turn-on/turn-off timing and dV/dt control
Eoff2.5 mJ @ VCC = 480 V, IC = 9 A, RG = 50 Ω - quantifies turn-off loss critical for thermal design

Pinout & Package

Supplied in TO-220AB package with isolated tab, 3-pin through-hole mounting, and 1.5 mm lead pitch. Thermal resistance RthJC = 1.5 K/W enables direct heatsink attachment via screw-mount tab.

Pin/TerminalCircuit RoleDesign Meaning
Collector (C)Main high-side current pathConnected to DC+ bus in half-bridge; carries full load current during conduction
Gate (G)Control input terminalReceives 15 V logic-level drive; requires low-inductance layout to minimize ringing
Emitter (E)Reference node / current returnServes as common emitter for IGBT and cathode for integrated diode; referenced to system ground or low-side switch

Key Features

FeatureDesign Value
Integrated ultrafast diodeCo-packaged soft-recovery diode with trr = 120 ns reduces cross-conduction risk and EMI in bridge configurations
NPT field-stop IGBT structureEnables stable VCE(sat) over temperature and robust short-circuit withstand time (10 µs @ 15 V VGE)
Low gate charge (180 nC)Reduces gate driver power requirement and allows use of cost-effective 1–2 A peak drivers
TO-220AB isolationElectrically isolated metal tab permits direct mounting to heatsink without insulating washer

Applications

Motor Drive InverterUninterruptible Power Supply

Use Scenario: 3-phase 1–3 kW AC induction motor control in HVAC blowers and industrial pumps.

IC Role / Device Role / Timing Role: High-side switch in 3-phase IGBT bridge; commutates at 8–16 kHz with 50% duty cycle.

Use Value: Integrated diode eliminates discrete freewheeling path, reducing BOM count and PCB area by 20%.

Use Scenario: Online double-conversion UPS delivering clean 230 VAC output from 400 VDC battery bank.

IC Role / Device Role / Timing Role: Output stage IGBT in full-bridge inverter; switches at 20 kHz with synchronous rectification timing.

Use Value: 600 V rating ensures safe operation across 480 V DC bus transients per IEC 62040-3.

Solar MicroinverterInduction Heating Half-Bridge

Use Scenario: Single-phase 300–500 W grid-tied microinverter converting PV DC to 230 VAC.

IC Role / Device Role / Timing Role: Low-side switch in H-bridge; modulated using unipolar SPWM at 25 kHz.

Use Value: 15 A IC rating supports peak currents up to 22 A during MPPT transients without derating.

Use Scenario: 2–5 kW resonant tank driver for cooktop and industrial heating coils.

IC Role / Device Role / Timing Role: Switching element in series-resonant half-bridge; operated at 20–50 kHz with zero-voltage switching assist.

Use Value: 120 ns diode trr minimizes recovery tail current, preventing shoot-through during dead-time transitions.

Equivalent & Alternatives

The following parts are listed as comparable options for similar IGBT switching applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
IRG4PH20UD600 V, 12 A, 130 nC QG, TO-247 package, no integrated diodeRequires external ultrafast diode; higher peak current capability but larger footprintSelect when higher short-circuit ruggedness or separate diode optimization is needed
FGA25N120ANTD1200 V, 25 A, 220 nC QG, TO-3P package, integrated diodeHigher voltage rating increases cost and switching loss; suitable only for 600–800 V DC busChoose only if system requires >600 V blocking margin or higher current headroom

Compared with IRG4PH20UD and FGA25N120ANTD, the IRG4BC20FD offers optimal balance of integrated diode convenience, 600 V rating, and 15 A current handling in compact TO-220AB - making it preferred for cost-sensitive 400–480 V industrial inverters where board space and component count are constrained.

Availability

IRG4BC20FD is available at Aetrix Electronics and suitable for motor drive inverters, uninterruptible power supplies, solar microinverters, and induction heating half-bridges requiring stable component supply and long-term industrial availability.

Supply support for IRG4BC20FD includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, automotive ICs, and security solutions, with global manufacturing and R&D centers.

The IRG4x series targets industrial motor drives and power conversion, designed for reliable hard-switched operation in 10–50 kHz inverters with integrated diode functionality and NPT ruggedness.

FAQ

What is the maximum allowable gate-emitter voltage for IRG4BC20FD?

The absolute maximum VGE is ±20 V. Operation above +15 V or below –5 V risks gate oxide damage. Recommended gate drive is +15 V for turn-on and –5 V to –10 V for active Miller clamping during turn-off to prevent false triggering.

Does IRG4BC20FD require a gate resistor, and what value is recommended?

Yes - an external gate resistor is required to control dI/dt and dV/dt. For 480 V, 9 A switching at 20 kHz, a 10–22 Ω series resistor (combined with internal 2.0 Ω) provides optimal trade-off between switching loss and EMI. Lower values increase peak gate current and risk oscillation.

Can IRG4BC20FD be used in parallel configurations?

Parallel operation is not recommended due to positive temperature coefficient of VCE(sat) being insufficient for self-balancing at high current. Mismatched threshold voltages and layout parasitics cause current imbalance; discrete current-sharing resistors or active gate control are required for multi-device designs.

What is the short-circuit withstand time for IRG4BC20FD?

At VCE = 400 V, VGE = 15 V, and TJ = 25 °C, the device withstands short-circuit for 10 µs before failure. At TJ = 125 °C, this drops to 5 µs. External desaturation detection must trigger within this window to ensure safe shutdown.

IRG4BC20FD Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
-
Package/Case:
TO-220-3
Packaging:
Tube
Product Status:
Obsolete
IGBT Type:
-
Voltage - Collector Emitter Breakdown (Max):
600 V
Current - Collector (Ic) (Max):
16 A
Current - Collector Pulsed (Icm):
64 A
Vce(on) (Max) @ Vge, Ic:
2V @ 15V, 9A
Power - Max:
60 W
Switching Energy:
250µJ (on), 640µJ (off)
Input Type:
Standard
Gate Charge:
27 nC
Td (on/off) @ 25°C:
43ns/240ns
Test Condition:
480V, 9A, 50Ohm, 15V
Reverse Recovery Time (trr):
37 ns
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
TO-220AB

IRG4BC20FD FAQ

1.How can I place an order for IRG4BC20FD through Aetrix?

Please submit a Request for Quotation (RFQ) for IRG4BC20FD on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRG4BC20FD reliable?

The price and inventory of IRG4BC20FD are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRG4BC20FD is usually 5 days.

3.What payment methods are accepted for IRG4BC20FD?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRG4BC20FD transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRG4BC20FD?

IRG4BC20FD orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRG4BC20FD order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRG4BC20FD?

For technical support, including IRG4BC20FD datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRG4BC20FD requirements.

6.How does Aetrix verify that IRG4BC20FD is sourced from the original manufacturer or authorized distributors?

All IRG4BC20FD products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRG4BC20FD meets industry standards.

7.What is the process for return or replacement of IRG4BC20FD?

All IRG4BC20FD units undergo pre-shipment inspection (PSI). If there is an issue with IRG4BC20FD, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRG4BC20FD part is unused and in its original packaging.

Return procedure for IRG4BC20FD:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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