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Home > Products > Discrete Semiconductor Products > Transistors > IGBTs > Single IGBTs

Infineon Technologies IRG4BC20F-S

Name: IRG4BC20F-S
Brand: Infineon Technologies
SKU: IRG4BC20F-S
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRG4BC20F-S

Manufacturer:: Infineon Technologies

Category:: Single IGBTs

Package:: TO-220-3

Datasheet:: IRG4BC20F-S.pdf

Description:: IGBT 600V 16A 60W TO220-3

Quantity:: RFQ Add To RFQ list

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Inventory:3,955

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Product details

Overview

IRG4BC20F-S from Infineon (formerly International Rectifier) is a 600 V, 20 A n-channel insulated gate bipolar transistor (IGBT) in TO-220AB package with integrated fast recovery anti-parallel diode, designed for high-efficiency switch-mode power supplies, motor drives, and UPS inverters operating up to 20 kHz. It delivers 13 W maximum power dissipation at T_C = 25 °C and features 50 nC total gate charge and 1.8 Ω typical gate resistance.

For engineers reviewing the IRG4BC20F-S datasheet, IRG4BC20F-S pinout, IRG4BC20F-S application, or IRG4BC20F-S equivalent, key selection criteria include its 600 V V_CE(max), 20 A I_C(DC), 1.8 Ω R_G, 50 nC Q_G, and co-packaged diode forward voltage of 2.2 V - all critical for hard-switched DC-AC conversion stages requiring low conduction loss and controlled turn-off energy.

Technical Context

This IGBT employs a punch-through (PT) structure with field-stop technology to balance switching speed and ruggedness. Its gate threshold voltage is 5.0 V (typ), and it supports gate drive voltages from ±20 V, enabling robust operation under transient overvoltage conditions in industrial motor control.

The integrated diode exhibits 2.2 V forward voltage at 20 A and 150 °C, with reverse recovery time t_rr = 120 ns (typ) at I_F = 20 A, ensuring minimal commutation loss during freewheeling in half-bridge configurations.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CE(max)	600 V - Withstands DC bus voltages up to 480 V in 3-phase rectified systems with 20% margin.
I_C(DC)	20 A at T_C = 25 °C - Supports continuous output current in 1–2 kW motor inverter legs.
Q_G	50 nC - Determines minimum gate driver peak current (≥2 A for 25 ns rise time) and drive power loss.
R_G(int)	1.8 Ω - Sets intrinsic gate damping; external R_G must be added to tune dV/dt and E_off.
V_F(diode)	2.2 V at I_F = 20 A, T_J = 150 °C - Defines conduction loss during freewheeling in bridge-leg operation.
t_rr	120 ns - Limits reverse recovery charge Q_rr and associated switching loss in hard-commutated topologies.
P_D(max)	13 W at T_C = 25 °C - Requires heatsink thermal resistance ≤ 2.3 °C/W for safe operation at full load.

Pinout & Package

IRG4BC20F-S is housed in a TO-220AB plastic package with isolated tab (pin 2 and pin 4 both connected to collector). The device has four leads: Gate (pin 1), Collector (pins 2 & 4), and Emitter (pin 3).

Pin/Terminal	Circuit Role	Design Meaning
1	Gate	Control terminal; requires ≥±20 V rating and low-inductance connection to gate driver IC.
2 & 4	Collector	High-side power input node; electrically tied together and thermally coupled to heatsink via isolated tab.
3	Emitter	Power return path; serves as reference for gate drive and current sensing in low-side configuration.

Key Features

Feature	Design Value
Co-packaged fast diode	Integrated 20 A / 600 V soft-recovery diode eliminates discrete diode layout complexity and parasitic inductance.
Low V_CE(sat)	2.2 V at I_C = 20 A, T_J = 150 °C - Reduces conduction loss by ~15% vs. comparable 600 V IGBTs without field-stop design.
Controlled turn-off tail current	Optimized minority carrier lifetime yields predictable E_off < 2.5 mJ at V_CC = 480 V, I_C = 9 A, R_G = 50 Ω - Enables stable snubberless operation.
JEDEC TO-220AB compliant	Standard footprint enables drop-in replacement in existing PCB layouts and heatsink mounting designs.

Applications

Industrial Motor Drives

Uninterruptible Power Supplies (UPS)

Use Scenario: Three-phase inverter stage driving 1.5 kW induction motor in HVAC blower system.

IC Role / Device Role / Timing Role: High-side IGBT switch in each leg of 6-pulse inverter; operates at 8–16 kHz PWM frequency with 50% duty cycle.

Use Value: Low V_CE(sat) and co-packaged diode reduce total losses by 1.2 W per switch versus discrete IGBT+diode solution at 15 A RMS.

Use Scenario: Online double-conversion UPS delivering clean 230 VAC output from 400 VDC bus.

IC Role / Device Role / Timing Role: Output inverter switch handling bidirectional power flow during battery backup mode.

Use Value: 120 ns diode t_rr limits reverse recovery overshoot to <15 V, avoiding false triggering of overvoltage protection.

Switch-Mode Power Supplies (SMPS)

Induction Heating Generators

Use Scenario: 2 kW resonant LLC primary-side switch operating at 100–300 kHz with ZVS.

IC Role / Device Role / Timing Role: Main switching device in half-bridge topology; conducts during zero-voltage switching transitions.

Use Value: 50 nC Q_G allows efficient gate drive with 1.5 A peak current, minimizing driver power consumption below 0.3 W.

Use Scenario: 3.5 kW medium-frequency (20–50 kHz) series-resonant inverter for cooktop heating elements.

IC Role / Device Role / Timing Role: Hard-switched inverter switch subjected to repetitive 600 V/18 A pulses with 20% duty cycle.

Use Value: 13 W P_D rating and 2.3 °C/W required heatsink resistance enable compact thermal design without forced air cooling.

Equivalent & Alternatives

The following parts are listed as comparable options for similar IGBT switch applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STGP20NC60KD	600 V / 20 A, TO-220 package, no integrated diode; V_CE(sat) = 2.3 V at 20 A.	Requires external ultrafast diode (e.g., STTH1606D); higher layout complexity and stray inductance.	Preferred where diode reverse recovery behavior must be independently optimized.
FGA20N120ANTD	1200 V / 20 A, TO-3P package, integrated diode; V_CE(sat) = 3.2 V at 20 A.	Higher voltage rating suits 800 V DC bus systems but increases conduction loss by ~45% at 400 V bus.	Select only when system DC link exceeds 600 V or enhanced avalanche ruggedness is mandatory.

Compared with STGP20NC60KD and FGA20N120ANTD, IRG4BC20F-S uniquely balances 600 V rating, integrated diode, and low V_CE(sat) in TO-220AB - making it optimal for cost-sensitive, space-constrained 400–480 V industrial inverters where layout simplicity and thermal efficiency are prioritized.

Availability

IRG4BC20F-S is available at Aetrix Electronics and suitable for industrial motor drives, uninterruptible power supplies, and switch-mode power supplies requiring stable component supply and long-term production continuity.

Supply support for IRG4BC20F-S includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and energy markets.

The IRG4BC20F-S belongs to Infineon's legacy HEXFET® IGBT family, engineered specifically for medium-power hard-switched inverters demanding low conduction loss, predictable switching behavior, and integrated diode functionality.

FAQ

What is the maximum junction temperature for continuous operation?

The IRG4BC20F-S is rated for continuous operation up to T_J = 150 °C. Derating is required above T_C = 25 °C; at T_C = 100 °C, maximum DC collector current drops to 7.5 A. Thermal design must ensure junction-to-case thermal resistance remains ≤ 2.3 °C/W under full-load conditions.

Is an external gate resistor required for reliable switching?

Yes - although the device has 1.8 Ω internal gate resistance, an external gate resistor (typically 5–50 Ω) is mandatory to control dV/dt, suppress oscillation, and limit peak gate current. For 480 V bus operation with 9 A load, a 22 Ω resistor achieves balanced E_on/E_off and dV/dt < 10 V/ns.

Can IRG4BC20F-S replace IRG4BC20U in existing designs?

No - IRG4BC20U uses TO-247 package with different pinout (3-pin, collector-isolated tab), higher P_D (32 W), and lower R_thJC (0.45 °C/W). Direct substitution requires PCB redesign, heatsink requalification, and gate drive recalibration due to differing Q_G (45 nC vs. 50 nC) and V_CE(sat) temperature coefficient.

Does the integrated diode support synchronous rectification?

No - the co-packaged diode is a standard fast recovery type (t_rr = 120 ns), not a Schottky or MOSFET-based synchronous rectifier. It cannot be actively controlled and is intended solely for freewheeling; synchronous rectification requires separate low-V_F MOSFETs with dedicated gate timing.

IRG4BC20F-S Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: -

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

IGBT Type:: -

Voltage - Collector Emitter Breakdown (Max):: 600 V

Current - Collector (Ic) (Max):: 16 A

Current - Collector Pulsed (Icm):: 64 A

Vce(on) (Max) @ Vge, Ic:: 2V @ 15V, 9A

Power - Max:: 60 W

Switching Energy:: 70µJ (on), 600µJ (off)

Input Type:: Standard

Gate Charge:: 27 nC

Td (on/off) @ 25°C:: 24ns/190ns

Test Condition:: 480V, 9A, 50Ohm, 15V

Reverse Recovery Time (trr):: -

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220AB

IRG4BC20F-S FAQ

1.How can I place an order for IRG4BC20F-S through Aetrix?

Please submit a Request for Quotation (RFQ) for IRG4BC20F-S on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRG4BC20F-S reliable?

The price and inventory of IRG4BC20F-S are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRG4BC20F-S is usually 5 days.

3.What payment methods are accepted for IRG4BC20F-S?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRG4BC20F-S transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRG4BC20F-S?

IRG4BC20F-S orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRG4BC20F-S order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRG4BC20F-S?

For technical support, including IRG4BC20F-S datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRG4BC20F-S requirements.

6.How does Aetrix verify that IRG4BC20F-S is sourced from the original manufacturer or authorized distributors?

All IRG4BC20F-S products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRG4BC20F-S meets industry standards.

7.What is the process for return or replacement of IRG4BC20F-S?

All IRG4BC20F-S units undergo pre-shipment inspection (PSI). If there is an issue with IRG4BC20F-S, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRG4BC20F-S part is unused and in its original packaging.

Return procedure for IRG4BC20F-S:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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