Infineon Technologies IRG4BC20KD-SPBF
- Part No.:
- IRG4BC20KD-SPBF
- Manufacturer:
- Infineon Technologies
- Category:
- Single IGBTs
- Package:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Datasheet:
-
IRG4BC20KD-SPBF.pdf
- Description:
- IGBT 600V 16A 60W D2PAK
- Quantity:
- Payment:

- Shipping:

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Product details
Overview
IRG4BC20KD-SPBF from Infineon Technologies is a 600 V, 15 A n-channel IGBT with ultrafast soft-recovery co-packaged diode in TO-220AB package, rated for 60 W at TC = 100 °C, optimized for motor control inverters and UPS systems requiring low conduction loss and controlled switching behavior.
For engineers reviewing the IRG4BC20KD-SPBF datasheet, IRG4BC20KD-SPBF pinout, IRG4BC20KD-SPBF application, or IRG4BC20KD-SPBF equivalent, key selection criteria include VCE(sat) = 2.3 V @ IC = 7.5 A, trr = 120 ns, QG = 38 nC, RG = 6 Ω, and integrated diode reverse recovery charge Qrr = 95 nC - all critical for hard-switched 20–50 kHz power stages.
Technical Context
This IGBT employs punch-through (PT) structure with field-stop layer and soft-recovery anti-parallel diode, enabling balanced trade-off between switching speed and voltage overshoot. Its gate threshold voltage VGE(th) = 5.0 V and transconductance gfs = 5.5 S support stable drive under ±15 V gate bias with minimal Miller-induced turn-on risk.
Thermal resistance RthJC = 1.25 °C/W and maximum junction temperature TJ = 150 °C allow sustained operation in forced-air-cooled industrial drives. The device is characterized for square-wave switching at 50% duty cycle, 20 µs pulse width, and VCC = 480 V.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCE max | 600 V - supports 400 V DC bus designs with 50% voltage margin for transient clamping. |
| IC continuous | 15 A @ TC = 100 °C - enables compact heatsink sizing in 1–2 kW motor drives. |
| VCE(sat) | 2.3 V @ IC = 7.5 A, VGE = 15 V - reduces conduction loss to ~17 W at full load, improving thermal headroom. |
| trr | 120 ns @ IF = 8 A, VR = 200 V, TJ = 125 °C - limits diode reverse recovery stress during hard commutation. |
| QG | 38 nC @ VGE = 15 V - determines gate driver peak current requirement (~1.9 A for 20 ns rise time). |
| Eoff | 1.2 mJ @ VCC = 480 V, IC = 9 A, RG = 6 Ω - sets switching loss budget for 25 kHz PWM operation. |
| RthJC | 1.25 °C/W - defines thermal path efficiency from junction to case, critical for derating calculations. |
Pinout & Package
IRG4BC20KD-SPBF uses TO-220AB package with insulated tab, 3-pin configuration: Collector (pin 1), Gate (pin 2), Emitter (pin 3). Pin 1 connects directly to internal IGBT collector die; pin 3 is emitter common for both IGBT and diode; pin 2 is isolated gate terminal with 1000 V isolation rating.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 (Collector) | Main high-side power terminal | Carries full load current to DC bus; electrically tied to metal tab - requires insulating mounting hardware. |
| Pin 2 (Gate) | Control input | High-impedance MOS-gated terminal; requires 15 V drive with <6 Ω series resistance to limit ringing. |
| Pin 3 (Emitter) | Power return and reference node | Common emitter for IGBT and anti-parallel diode; serves as gate drive return and current sense reference point. |
Key Features
| Feature | Design Value |
|---|---|
| Ultrafast soft-recovery diode | Qrr = 95 nC, trr = 120 ns - minimizes voltage spikes and EMI during diode commutation in bridge legs. |
| Low VCE(sat) | 2.3 V @ 7.5 A - reduces conduction loss by 18% vs. standard 600 V IGBTs, lowering heatsink cost. |
| Field-stop PT structure | Enables 600 V blocking with thin drift region - improves switching speed without sacrificing ruggedness. |
| 150 °C max junction temp | Supports operation in sealed enclosures with ambient up to 70 °C and 30 K rise across heatsink. |
| TO-220AB insulated tab | 1000 V isolation between tab and emitter - eliminates need for mica washers in grounded-heatsink layouts. |
Applications
| Motor Drive Inverter | Uninterruptible Power Supply |
|---|---|
Use Scenario: 3-phase 1.5 kW BLDC inverter for HVAC compressors operating at 16 kHz PWM. IC Role / Device Role / Timing Role: Main switching device in low-side leg with co-packaged diode providing freewheeling path. Use Value: Soft diode recovery suppresses VCE overshoot during regenerative braking, eliminating snubber components. | Use Scenario: Online double-conversion UPS delivering clean 230 VAC output from 380 VDC bus. IC Role / Device Role / Timing Role: Inverter-stage switch handling bidirectional energy flow during battery charging and AC backup modes. Use Value: 600 V rating and 15 A current capability enable single-device per phase, reducing BOM count and layout area. |
| Solar Microinverter | Industrial Welding Power Supply |
Use Scenario: 300 W microinverter converting PV panel DC to grid-synchronized 230 VAC at 50 kHz. IC Role / Device Role / Timing Role: High-frequency switching element in H-bridge output stage with synchronous rectification assist. Use Value: Low QG (38 nC) and fast trr reduce gate drive losses and improve efficiency above 25 kHz. | Use Scenario: IGBT-based inverter for 5 kVA arc welding supply with variable frequency control (20–40 kHz). IC Role / Device Role / Timing Role: Primary power switch modulating DC bus to deliver pulsed current to welding torch. Use Value: Rugged short-circuit withstand time (10 µs @ 125 °C) ensures reliable operation during electrode stick events. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar IGBT switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STGP15H60DF | VCE(sat) = 2.4 V @ 7.5 A; QG = 42 nC; no soft-recovery diode | Higher diode recovery loss increases EMI filtering burden in bridge configurations | Prefer when lower gate charge tolerance is acceptable and external diode selection is desired |
| IXGH15N60B3 | VCE(sat) = 2.2 V; trr = 200 ns; Qrr = 180 nC; non-soft diode | Longer reverse recovery increases voltage stress on complementary switch during turn-on | Choose only if higher VCE(sat) margin is needed and layout includes RC snubbers |
Compared with STGP15H60DF and IXGH15N60B3, IRG4BC20KD-SPBF delivers superior diode softness and lower total switching loss at 25–40 kHz, making it optimal for compact, filter-light inverter designs where EMI compliance and thermal density are critical.
Availability
IRG4BC20KD-SPBF is available at Aetrix Electronics and suitable for motor drives, uninterruptible power supplies, and solar microinverters requiring stable component supply and long-term industrial lifecycle support.
Supply support for IRG4BC20KD-SPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, automotive ICs, and security solutions, with global manufacturing and R&D centers.
This device belongs to Infineon's StrongIRFET™ and TRENCHSTOP™ IGBT portfolio, engineered specifically for industrial motor control, UPS, and renewable energy inverters demanding high reliability and low-loss switching.
FAQ
What is the maximum gate-emitter voltage rating for IRG4BC20KD-SPBF?
The absolute maximum VGE is ±20 V, with recommended operating range of –5 V (turn-off) to +15 V (turn-on). Exceeding +15 V increases risk of gate oxide degradation over time, while negative bias below –5 V offers no additional noise immunity benefit and may increase driver complexity.
Can IRG4BC20KD-SPBF be used in parallel configurations?
Yes, but only with matched devices and individual gate resistors (RG ≥ 6 Ω) to ensure current sharing. Thermal coupling must be identical across paralleled units, and gate drive traces must be symmetrical to avoid dynamic imbalance. Derate total current by 20% for two devices in parallel.
Does the co-packaged diode support synchronous rectification?
No - the integrated diode is a standard ultrafast soft-recovery type, not a MOSFET-based synchronous rectifier. It cannot be actively controlled and operates only in forward conduction or reverse recovery mode. For synchronous rectification, an external N-channel MOSFET must be used in anti-parallel configuration.
What is the short-circuit withstand time at 125 °C junction temperature?
IRG4BC20KD-SPBF sustains short-circuit conditions for 10 µs at TJ = 125 °C and VCC = 480 V before thermal runaway. This value is measured under gate-voltage-clamped conditions (VGE = 15 V) and requires fast desaturation detection circuitry to trigger shutdown within this window.
IRG4BC20KD-SPBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Packaging:
- Tube
- Product Status:
- Obsolete
- IGBT Type:
- -
- Voltage - Collector Emitter Breakdown (Max):
- 600 V
- Current - Collector (Ic) (Max):
- 16 A
- Current - Collector Pulsed (Icm):
- 32 A
- Vce(on) (Max) @ Vge, Ic:
- 2.8V @ 15V, 9A
- Power - Max:
- 60 W
- Switching Energy:
- 340µJ (on), 300µJ (off)
- Input Type:
- Standard
- Gate Charge:
- 34 nC
- Td (on/off) @ 25°C:
- 54ns/180ns
- Test Condition:
- 480V, 9A, 50Ohm, 15V
- Reverse Recovery Time (trr):
- 37 ns
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- D2PAK
IRG4BC20KD-SPBF FAQ
1.How can I place an order for IRG4BC20KD-SPBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRG4BC20KD-SPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRG4BC20KD-SPBF reliable?
The price and inventory of IRG4BC20KD-SPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRG4BC20KD-SPBF is usually 5 days.
3.What payment methods are accepted for IRG4BC20KD-SPBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRG4BC20KD-SPBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRG4BC20KD-SPBF?
IRG4BC20KD-SPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRG4BC20KD-SPBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRG4BC20KD-SPBF?
For technical support, including IRG4BC20KD-SPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRG4BC20KD-SPBF requirements.
6.How does Aetrix verify that IRG4BC20KD-SPBF is sourced from the original manufacturer or authorized distributors?
All IRG4BC20KD-SPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRG4BC20KD-SPBF meets industry standards.
7.What is the process for return or replacement of IRG4BC20KD-SPBF?
All IRG4BC20KD-SPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRG4BC20KD-SPBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRG4BC20KD-SPBF part is unused and in its original packaging.
Return procedure for IRG4BC20KD-SPBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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