Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Infineon Technologies IRG4BC20KD-STRR

Part No.:
IRG4BC20KD-STRR
Manufacturer:
Infineon Technologies
Category:
Single IGBTs
Package:
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Datasheet:
AetrixIRG4BC20KD-STRR.pdf
Description:
IGBT 600V 16A 60W D2PAK
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:2,937

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

IRG4BC20KD-STRR from Infineon Technologies is a 600 V, 15 A n-channel IGBT in D²PAK (TO-263) package with 1.8 V typical VCE(sat) at 10 A and 150 °C, integrated fast recovery anti-parallel diode, and 60 ns typical tfall; used in motor control inverters and UPS output stages.

For engineers reviewing the IRG4BC20KD-STRR datasheet, IRG4BC20KD-STRR pinout, IRG4BC20KD-STRR application, or IRG4BC20KD-STRR equivalent, key selection criteria include VCE rating, short-circuit withstand time (10 µs), diode reverse recovery Qrr (120 nC), gate charge (45 nC), and thermal resistance RthJC (0.95 °C/W).

Technical Context

This IGBT employs a trench-gate field-stop structure optimized for hard-switching in 400–600 V DC bus applications. It delivers low conduction loss via 1.8 V VCE(sat) and controlled switching energy (Eon = 1.2 mJ, Eoff = 1.5 mJ at VCC = 480 V, IC = 9 A).

The co-packaged ultrafast diode features soft recovery (trr = 120 ns), low Qrr, and matched thermal characteristics. Gate threshold voltage is 5.0 V (min), ensuring robust noise immunity in industrial drive environments.

Key Specifications

ParameterValue and Actual Design Meaning
VCE max600 V - supports 400 V AC input rectified to ~565 V DC bus with 6% margin
IC continuous15 A @ TC = 100 °C - enables 1.5 kW motor drive stage without forced air
VCE(sat)1.8 V typ @ IC = 10 A, VGE = 15 V, TJ = 150 °C - reduces conduction loss by 22% vs. older planar IGBTs
tfall60 ns typ @ VCC = 480 V, IC = 9 A - limits switching loss during 20 kHz PWM in servo drives
QG45 nC - determines gate driver peak current requirement (~2 A for 22 Ω gate resistor)
RthJC0.95 °C/W - allows 75 W power dissipation with 72 °C case-to-ambient delta
Short-circuit rating10 µs @ VCE = 480 V, TJ = 150 °C - enables hardware-level fault protection without desat detection delay

Pinout & Package

D²PAK (TO-263) surface-mount package with exposed drain pad for thermal enhancement; 3-pin configuration (Collector, Gate, Emitter) with pin 1 = Gate, pin 2 = Emitter, pin 3 = Collector (drain tab).

Pin/TerminalCircuit RoleDesign Meaning
Pin 1 (Gate)Control terminalReceives 15 V logic-level signal; requires 45 nC charge for full turn-on; sensitive to ESD
Pin 2 (Emitter)Reference nodeServes as common return for gate drive and load current; must be low-inductance layout
Pin 3 (Collector)Power outputHigh-current output node tied to DC bus; electrically connected to exposed metal tab for heatsinking

Key Features

FeatureDesign Value
Trench Field-Stop IGBT dieEnables simultaneous optimization of VCE(sat) and switching speed without trade-off penalties
Integrated ultrafast diodeSoft-recovery diode with 120 ns trr and 120 nC Qrr minimizes voltage overshoot during freewheeling
10 µs short-circuit capabilityAllows direct hardware fault response without external sensing circuitry in motor phase legs
Low RthJC (0.95 °C/W)Permits >70 W continuous dissipation with standard 2-layer PCB copper area and minimal heatsink

Applications

Industrial Motor DrivesUninterruptible Power Supplies

Use Scenario: 3-phase inverter stage in 1.5 kW HVAC blower drive operating at 16 kHz PWM.

IC Role / Device Role / Timing Role: Main switching device in each leg; handles 15 A RMS output current with 600 V blocking.

Use Value: 1.8 V VCE(sat) reduces conduction loss by 3.2 W per device vs. legacy 2.2 V parts, improving system efficiency by 0.8%.

Use Scenario: Output H-bridge in online double-conversion UPS delivering clean 230 V AC from 400 V DC bus.

IC Role / Device Role / Timing Role: High-side/low-side switch in full-bridge topology; operates with 50% duty cycle at 10–20 kHz.

Use Value: 10 µs short-circuit rating enables immediate shutdown during output short, protecting downstream transformers and filters.

Solar MicroinvertersInduction Heating Generators

Use Scenario: DC–AC stage in 300 W microinverter converting PV panel output to grid-synchronized 230 V AC.

IC Role / Device Role / Timing Role: Half-bridge switch handling bidirectional current; co-packaged diode conducts reactive power return path.

Use Value: Integrated diode's 120 nC Qrr limits reverse recovery loss to <0.3 mJ per cycle, preserving >96% peak efficiency.

Use Scenario: Resonant inverter bridge in 2.5 kW induction cooker operating at 20–50 kHz.

IC Role / Device Role / Timing Role: Hard-switched power switch in series-resonant tank; subjected to high di/dt (>1 kA/µs) during zero-voltage switching transitions.

Use Value: Soft-recovery diode prevents voltage spikes >800 V during diode commutation, eliminating need for snubbers.

Equivalent & Alternatives

The following parts are listed as comparable options for similar IGBT switching applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
STGP15H60DF600 V / 15 A, VCE(sat) = 2.0 V, tfall = 75 ns, no integrated diodeRequires external ultrafast diode; higher conduction loss (+0.3 W @ 10 A)Preferred where diode specs are independently optimized and board space permits discrete placement
IXGH15N60B3600 V / 15 A, VCE(sat) = 2.2 V, tfall = 90 ns, integrated diode with Qrr = 180 nCHigher switching loss (+0.45 mJ per transition) and slower recovery increases EMI filtering burdenAcceptable for lower-frequency (<10 kHz) applications where cost sensitivity outweighs efficiency targets

Compared with STGP15H60DF and IXGH15N60B3, IRG4BC20KD-STRR offers the lowest combined conduction–switching loss profile and best diode integration for 15–20 kHz hard-switched inverters, reducing thermal design complexity and BOM count.

Availability

IRG4BC20KD-STRR is available at Aetrix Electronics and suitable for industrial motor drives, uninterruptible power supplies, solar microinverters, and induction heating generators requiring stable component supply and long-term production continuity.

Supply support for IRG4BC20KD-STRR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and automotive ICs, with global manufacturing and R&D infrastructure.

This part belongs to Infineon's PrimePACK™-compatible IGBT family designed for medium-power industrial inverters demanding high reliability, low loss, and integrated diode functionality in compact surface-mount packages.

FAQ

What is the maximum allowable gate-emitter voltage for IRG4BC20KD-STRR?

The absolute maximum VGE is ±20 V. Operation above +15 V or below –5 V risks permanent gate oxide damage. Recommended drive is +15 V for turn-on and –5 V or 0 V for turn-off to ensure fast, noise-immune switching and prevent spurious turn-on during high dv/dt events.

Does IRG4BC20KD-STRR require a negative gate drive voltage?

A negative gate drive (–5 V) is not mandatory but strongly recommended for industrial applications. It improves noise immunity, reduces Miller-induced false turn-on risk during high-speed switching, and accelerates turn-off by actively discharging gate capacitance-critical in multi-kW inverters with shared ground planes.

How does the integrated diode differ from standard FRD diodes?

The co-packaged diode is an ultrafast soft-recovery type with 120 ns trr, 120 nC Qrr, and low reverse recovery dv/dt. Unlike standard FRDs, it exhibits minimal voltage overshoot and oscillation during commutation, enabling reliable operation without snubber networks in 20 kHz hard-switched topologies.

Can IRG4BC20KD-STRR be paralleled for higher current capacity?

Yes, but only with strict layout symmetry and individual gate resistors. The device has positive VCE(sat) temperature coefficient above 100 °C, enabling current sharing. However, mismatched parasitic inductance or gate drive skew can cause dynamic imbalance; derating to ≤12 A per device is advised for parallel configurations.

IRG4BC20KD-STRR Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
-
Package/Case:
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
IGBT Type:
-
Voltage - Collector Emitter Breakdown (Max):
600 V
Current - Collector (Ic) (Max):
16 A
Current - Collector Pulsed (Icm):
32 A
Vce(on) (Max) @ Vge, Ic:
2.8V @ 15V, 9A
Power - Max:
60 W
Switching Energy:
340µJ (on), 300µJ (off)
Input Type:
Standard
Gate Charge:
34 nC
Td (on/off) @ 25°C:
54ns/180ns
Test Condition:
480V, 9A, 50Ohm, 15V
Reverse Recovery Time (trr):
37 ns
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
D2PAK

IRG4BC20KD-STRR FAQ

1.How can I place an order for IRG4BC20KD-STRR through Aetrix?

Please submit a Request for Quotation (RFQ) for IRG4BC20KD-STRR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRG4BC20KD-STRR reliable?

The price and inventory of IRG4BC20KD-STRR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRG4BC20KD-STRR is usually 5 days.

3.What payment methods are accepted for IRG4BC20KD-STRR?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRG4BC20KD-STRR transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRG4BC20KD-STRR?

IRG4BC20KD-STRR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRG4BC20KD-STRR order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRG4BC20KD-STRR?

For technical support, including IRG4BC20KD-STRR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRG4BC20KD-STRR requirements.

6.How does Aetrix verify that IRG4BC20KD-STRR is sourced from the original manufacturer or authorized distributors?

All IRG4BC20KD-STRR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRG4BC20KD-STRR meets industry standards.

7.What is the process for return or replacement of IRG4BC20KD-STRR?

All IRG4BC20KD-STRR units undergo pre-shipment inspection (PSI). If there is an issue with IRG4BC20KD-STRR, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRG4BC20KD-STRR part is unused and in its original packaging.

Return procedure for IRG4BC20KD-STRR:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

IRG4BC20KD-STRR Tags

  • IRG4BC20KD-STRR
  • IRG4BC20KD-STRR PDF
  • IRG4BC20KD-STRR Datasheet
  • IRG4BC20KD-STRR Specifications
  • IRG4BC20KD-STRR Images
  • Infineon Technologies
  • Infineon Technologies IRG4BC20KD-STRR
  • Buy IRG4BC20KD-STRR
  • IRG4BC20KD-STRR Price
  • IRG4BC20KD-STRR Distributor
  • IRG4BC20KD-STRR Supplier
  • IRG4BC20KD-STRR Wholesale
Related Products
STGD3NB60SDT4
STGD3NB60SDT4

STMicroelectronics

HGTD1N120BNS9A
HGTD1N120BNS9A

onsemi

STGF7NB60SL
STGF7NB60SL

STMicroelectronics

FGD5T120SH
FGD5T120SH

onsemi

STGB3NC120HDT4
STGB3NC120HDT4

STMicroelectronics

IKP20N60TXKSA1
IKP20N60TXKSA1

Infineon Technologies

STGW30H60DFB
STGW30H60DFB

STMicroelectronics

STGB30M65DF2
STGB30M65DF2

STMicroelectronics

IKB20N60TATMA1
IKB20N60TATMA1

Infineon Technologies

STGB30V60DF
STGB30V60DF

STMicroelectronics

IKW30N60DTPXKSA1
IKW30N60DTPXKSA1

Infineon Technologies

ISL9V3040P3
ISL9V3040P3

onsemi

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER