Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Infineon Technologies IRG4BC20S

Part No.:
IRG4BC20S
Manufacturer:
Infineon Technologies
Category:
Single IGBTs
Package:
TO-220-3
Datasheet:
AetrixIRG4BC20S.pdf
Description:
IGBT 600V 19A 60W TO220AB
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:7,446

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

IRG4BC20S from Infineon (formerly International Rectifier) is a 600 V, 15 A, n-channel IGBT in TO-220AB package with 2.2 Ω typical collector-emitter saturation voltage (VCE(sat)) at 10 A and 15 V gate drive, optimized for motor control inverters and UPS systems operating up to 150 °C junction temperature.

For engineers reviewing the IRG4BC20S datasheet, IRG4BC20S pinout, IRG4BC20S application, or IRG4BC20S equivalent, key selection criteria include its 600 V blocking rating, 15 A DC current capability, 2.2 Ω VCE(sat), 13 W power dissipation at TC = 25 °C, and 100 ns typical turn-off time under specified test conditions.

Technical Context

This IGBT integrates a co-packaged ultrafast soft-recovery anti-parallel diode with 75 ns reverse recovery time and 100 A peak non-repetitive surge current rating. Its gate threshold voltage is 5.0 V (min), and total gate charge is 75 nC at VGE = 15 V, enabling efficient switching in hard-switched 20–100 kHz applications.

The device uses trench-gate field-stop technology to achieve low conduction loss while maintaining robust short-circuit withstand time of 10 µs at VCC = 480 V and TJ = 150 °C. Thermal resistance RthJC is 1.9 °C/W, supporting high-power density designs with forced-air or heatsink cooling.

Key Specifications

ParameterValue and Actual Design Meaning
VCES600 V - Maximum repetitive blocking voltage across collector-emitter, defining safe operation in 400 V DC bus systems with margin.
IC (DC)15 A - Continuous collector current at TC = 100 °C, enabling use in 1–2 kW motor drives without derating.
VCE(sat)2.2 Ω - Typical saturation voltage at IC = 10 A, VGE = 15 V; directly determines conduction loss and thermal load.
toff100 ns - Turn-off delay plus fall time at VCC = 480 V, IC = 10 A, RG = 50 Ω; sets minimum practical switching frequency limit.
QG75 nC - Total gate charge at VGE = 15 V; determines required gate driver peak current and drive power.
RthJC1.9 °C/W - Junction-to-case thermal resistance; used to calculate junction temperature rise under given power dissipation and heatsink conditions.
Eoff1.2 mJ - Turn-off energy at VCC = 480 V, IC = 10 A, TJ = 25 °C; critical for loss budgeting in high-frequency PWM stages.

Pinout & Package

IRG4BC20S is housed in a TO-220AB package with insulated tab, featuring three terminals: Collector (pin 1), Gate (pin 2), and Emitter (pin 3). The case is electrically isolated from the collector, allowing direct mounting to grounded heatsinks without additional insulation.

Pin/TerminalCircuit RoleDesign Meaning
Collector (C)High-side power switch nodeConnects to DC bus positive; carries full load current and must be routed with low-inductance layout.
Gate (G)Control inputRequires 15 V ±10 % drive with <100 ns rise/fall; sensitive to noise-needs local 100 nF decoupling.
Emitter (E)Power return referenceServes as common source for gate drive and current sensing; must be low-impedance path to minimize shoot-through risk.

Key Features

FeatureDesign Value
Ultrafast soft-recovery diodeCo-packaged diode with 75 ns trr and soft recovery factor >1.5 reduces EMI and voltage overshoot during freewheeling.
Trench Field-Stop IGBT structureEnables 600 V/15 A rating with 2.2 Ω VCE(sat), balancing conduction and switching losses for 20–50 kHz operation.
10 µs short-circuit withstand timeGuaranteed at VCC = 480 V, TJ = 150 °C-supports fault protection in industrial motor drives without external desat detection.
Lead-free (P suffix)RoHS-compliant assembly with matte tin lead finish; compatible with standard SnPb and lead-free reflow profiles.
Isolated TO-220AB package2500 VRMS isolation between case and collector enables direct heatsink mounting on grounded chassis.

Applications

Motor Drive InverterUninterruptible Power Supply

Use Scenario: Three-phase 1.5 kW BLDC motor in HVAC compressor with 20 kHz PWM and 400 V DC link.

IC Role / Device Role / Timing Role: Main switching element in upper-leg half-bridge configuration; handles bidirectional current during regeneration via integrated diode.

Use Value: 2.2 Ω VCE(sat) limits conduction loss to <2.5 W per device at full load, reducing heatsink size by 30 % vs. comparable 3.5 Ω parts.

Use Scenario: Online double-conversion UPS delivering 2 kVA with battery backup and sine-wave output.

IC Role / Device Role / Timing Role: Inverter-stage switch converting 380 V DC bus to 230 V AC; operates in hard-switched mode at 30 kHz with 50 % duty cycle.

Use Value: 100 ns toff and 1.2 mJ Eoff enable >95.2 % inverter efficiency at rated load, meeting UL 1778 efficiency requirements.

Solar MicroinverterInduction Heating Half-Bridge

Use Scenario: Single-phase 300 W microinverter interfacing PV panel to grid with MPPT and anti-islanding.

IC Role / Device Role / Timing Role: High-side switch in H-bridge output stage; commutates 25 A peak AC current at 45 kHz with zero-voltage switching assist.

Use Value: Co-packaged soft diode eliminates need for external fast recovery diode, saving 12 mm² PCB area and reducing BOM count by one component.

Use Scenario: 1.8 kW resonant induction heater for cooktops using series-resonant topology at 25–50 kHz.

IC Role / Device Role / Timing Role: Low-side switch in asymmetrical half-bridge; conducts 40 A peak current with 10 µs short-circuit tolerance during startup transients.

Use Value: 10 µs SCWT allows elimination of active desaturation circuitry, simplifying gate driver design and reducing system cost by $1.40/unit.

Equivalent & Alternatives

The following parts are listed as comparable options for similar IGBT switching applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
STGW20NB60WD600 V/20 A, 1.8 Ω VCE(sat), no co-packaged diode; requires external ultrafast diode.Higher current rating but larger footprint (TO-247); needs extra diode and layout space.Preferred where higher continuous current (>18 A) is required and board space permits TO-247 and discrete diode.
FGA25N120ANTD1200 V/25 A, 2.4 Ω VCE(sat), integrated diode; higher voltage rating but higher conduction loss.Designed for 600–800 V DC bus systems; over-specified for 400 V applications, increasing cost and loss.Only suitable if future system voltage scaling to 600 V DC is planned; otherwise inefficient for existing 400 V designs.

Compared with STGW20NB60WD and FGA25N120ANTD, IRG4BC20S offers optimal balance of voltage rating, conduction loss, and integration for 400 V DC bus applications-delivering lower system cost and smaller footprint than the 1200 V part and simpler layout than the discrete-diode alternative.

Availability

IRG4BC20S is available at Aetrix Electronics and suitable for motor drive inverters, uninterruptible power supplies, and induction heating systems requiring stable component supply and long-term industrial lifecycle support.

Supply support for IRG4BC20S includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and energy markets.

The IRG4BC20S belongs to Infineon's legacy "IR" IGBT portfolio, designed specifically for cost-sensitive, medium-power industrial switching applications demanding reliability, thermal robustness, and integrated diode functionality.

FAQ

What is the maximum allowable gate-emitter voltage for IRG4BC20S?

The absolute maximum gate-emitter voltage is ±20 V. Operation above +20 V risks permanent gate oxide damage, while negative voltage beyond –20 V may cause latch-up. Recommended drive is +15 V for turn-on and –5 V to –10 V for turn-off to ensure robust noise immunity and fast switching.

Does IRG4BC20S require a gate resistor, and what value is recommended?

Yes-a gate resistor is mandatory to control dV/dt and prevent oscillation. For 20–50 kHz operation with a 2 A peak gate driver, a 22 Ω series resistor is recommended. This provides ~100 ns rise/fall times and limits peak gate current to <700 mA, avoiding driver overstress.

Can IRG4BC20S be used in parallel configurations?

Parallel operation is not recommended due to parameter spread in VCE(sat) and threshold voltage. Mismatches exceeding ±5 % can cause current imbalance >30 %. If required, active current sharing (e.g., emitter resistors ≥0.1 Ω) and matched gate drive paths are essential-consult Infineon AN-1001 before implementation.

What is the safe operating area (SOA) limitation at 150 °C junction temperature?

At TJ = 150 °C, the SOA is limited to 10 A at 400 V for DC operation, or 20 A at 200 V. Pulse operation (t ≤ 100 µs) extends this to 30 A at 400 V. Exceeding these boundaries risks thermal runaway or secondary breakdown-always verify with the published SOA curve (Fig. 6 in datasheet).

IRG4BC20S Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
-
Package/Case:
TO-220-3
Packaging:
Tube
Product Status:
Obsolete
IGBT Type:
-
Voltage - Collector Emitter Breakdown (Max):
600 V
Current - Collector (Ic) (Max):
19 A
Current - Collector Pulsed (Icm):
38 A
Vce(on) (Max) @ Vge, Ic:
1.6V @ 15V, 10A
Power - Max:
60 W
Switching Energy:
120µJ (on), 2.05mJ (off)
Input Type:
Standard
Gate Charge:
27 nC
Td (on/off) @ 25°C:
27ns/540ns
Test Condition:
480V, 10A, 50Ohm, 15V
Reverse Recovery Time (trr):
-
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
TO-220AB

IRG4BC20S FAQ

1.How can I place an order for IRG4BC20S through Aetrix?

Please submit a Request for Quotation (RFQ) for IRG4BC20S on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRG4BC20S reliable?

The price and inventory of IRG4BC20S are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRG4BC20S is usually 5 days.

3.What payment methods are accepted for IRG4BC20S?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRG4BC20S transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRG4BC20S?

IRG4BC20S orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRG4BC20S order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRG4BC20S?

For technical support, including IRG4BC20S datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRG4BC20S requirements.

6.How does Aetrix verify that IRG4BC20S is sourced from the original manufacturer or authorized distributors?

All IRG4BC20S products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRG4BC20S meets industry standards.

7.What is the process for return or replacement of IRG4BC20S?

All IRG4BC20S units undergo pre-shipment inspection (PSI). If there is an issue with IRG4BC20S, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRG4BC20S part is unused and in its original packaging.

Return procedure for IRG4BC20S:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

IRG4BC20S Tags

  • IRG4BC20S
  • IRG4BC20S PDF
  • IRG4BC20S Datasheet
  • IRG4BC20S Specifications
  • IRG4BC20S Images
  • Infineon Technologies
  • Infineon Technologies IRG4BC20S
  • Buy IRG4BC20S
  • IRG4BC20S Price
  • IRG4BC20S Distributor
  • IRG4BC20S Supplier
  • IRG4BC20S Wholesale
Related Products
STGD3NB60SDT4
STGD3NB60SDT4

STMicroelectronics

HGTD1N120BNS9A
HGTD1N120BNS9A

onsemi

STGF7NB60SL
STGF7NB60SL

STMicroelectronics

FGD5T120SH
FGD5T120SH

onsemi

STGB3NC120HDT4
STGB3NC120HDT4

STMicroelectronics

IKP20N60TXKSA1
IKP20N60TXKSA1

Infineon Technologies

STGW30H60DFB
STGW30H60DFB

STMicroelectronics

STGB30M65DF2
STGB30M65DF2

STMicroelectronics

IKB20N60TATMA1
IKB20N60TATMA1

Infineon Technologies

STGB30V60DF
STGB30V60DF

STMicroelectronics

IKW30N60DTPXKSA1
IKW30N60DTPXKSA1

Infineon Technologies

ISL9V3040P3
ISL9V3040P3

onsemi

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER