Infineon Technologies IRG4BC20SD-S

Overview

IRG4BC20SD-S from Infineon Technologies is a 600 V, 19 A (T_C = 25°C) n-channel IGBT co-packaged with an ultrafast soft-recovery HEXFRED™ diode in D2Pak (TO-263) package. It delivers 1.4 V typical V_CE(on) at 10 A/15 V_GE, 38 A pulsed current capability, and 37 ns diode reverse recovery time (T_J = 25°C), targeting bridge-leg switching in motor inverters up to 3 kHz PWM.

For engineers reviewing the IRG4BC20SD-S datasheet, IRG4BC20SD-S pinout, IRG4BC20SD-S application, or IRG4BC20SD-S equivalent, key selection criteria include its integrated diode's 55 ns max t_rr at 125°C, 2.1 °C/W IGBT junction-to-case thermal resistance, and gate charge of 27 nC (typ.)-critical for loss optimization in industrial drive half-bridge modules.

Technical Context

This Generation 4 IGBT uses field-stop trench structure and is optimized for hard-switched inverter applications where conduction loss minimization and soft diode recovery are jointly prioritized. Its co-packaged HEXFRED diode exhibits <5.0 A peak reverse recovery current (I_RRM) and <138 nC Q_rr at 125°C, reducing voltage overshoot and snubber requirements.

The device operates across –55°C to +150°C junction temperature range with ±20 V gate rating and features tight V_CE(on) distribution (1.40–1.60 V at 10 A/15 V_GE). Switching energy is characterized at 480 V bus voltage, 10 A load, and 50 Ω gate resistance-yielding 2.58 mJ E_off and 4.33 mJ total switching loss at 150°C.

Key Specifications

Pinout & Package

Supplied in industry-standard D2Pak (TO-263) surface-mount package with isolated mounting tab. Thermal pad on underside requires full-solder coverage for optimal R_θJC.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar IGBT-in-dual configuration applications.

Compared with IRG4PH20UD-SPbF, IRG4BC20SD-S reduces system component count and layout complexity via integrated diode, while offering lower conduction loss and faster recovery. Against FGA25N120ANTD, it trades voltage headroom for significantly lower switching loss and tighter parameter distribution-ideal for cost-sensitive 400 V industrial drives.

Availability

IRG4BC20SD-S is available at Aetrix Electronics and suitable for industrial motor inverters, uninterruptible power supplies (UPS), brushless DC (BLDC) drives, and induction heating systems requiring stable component supply and long-term production continuity.

Supply support for IRG4BC20SD-S includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, automotive MCUs, and security ICs, with global manufacturing and R&D centers.

This device belongs to Infineon's S-Series IGBT portfolio, designed specifically for high-efficiency, medium-frequency (1–4 kHz) inverter applications where conduction loss and diode softness jointly determine system efficiency and EMI performance.

FAQ

What is the maximum recommended gate resistor value for reliable turn-off at 150°C junction temperature?

The datasheet specifies td(off) up to 1040 ns and tf up to 730 ns at T_J = 25°C with R_G = 50 Ω. At 150°C, td(off) increases to 980 ns and tf to 800 ns under identical conditions. To maintain <1 µs total turn-off time and avoid shoot-through in half-bridge configurations, R_G should not exceed 33 Ω for standard 1 A gate drivers.

Can IRG4BC20SD-S be used in parallel configurations, and what layout precautions are required?

Yes-its tight V_CE(on) distribution (1.40–1.60 V) supports current sharing. Layout must ensure matched gate loop inductance (<5 nH difference) and symmetrical emitter trace lengths with Kelvin emitter connections. Thermal coupling via shared heatsink is mandatory; ΔT between devices must stay below 5°C to prevent thermal runaway.

Does the integrated diode support synchronous rectification in bidirectional topologies?

Yes-the HEXFRED diode's ultra-soft recovery (t_rr ≤ 55 ns, di(rec)M/dt ≤ 240 A/µs at 25°C) enables clean commutation in synchronous rectifier mode. However, its 7.0 A continuous forward current rating at T_C = 100°C limits use to asymmetrical topologies where diode conduction duty is <30%.

What is the safe operating area (SOA) limitation at 100°C case temperature?

Per Figure 12, the DC SOA at T_C = 100°C is bounded by 10 A at 400 V and 5 A at 600 V. For pulse operation (≤100 µs), the device supports 38 A up to 300 V. Exceeding these boundaries risks second breakdown; design must include overcurrent protection that trips within 10 µs at >25 A.