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Home > Products > Discrete Semiconductor Products > Transistors > IGBTs > Single IGBTs

Infineon Technologies IRG4BC20UD

Name: IRG4BC20UD
Brand: Infineon Technologies
SKU: IRG4BC20UD
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRG4BC20UD

Manufacturer:: Infineon Technologies

Category:: Single IGBTs

Package:: TO-220-3

Datasheet:: IRG4BC20UD.pdf

Description:: IGBT 600V 13A 60W TO220AB

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRG4BC20UD from Infineon Technologies is a 600 V, 15 A, n-channel IGBT in TO-220AB package with 1.8 V typical V_CE(sat) at 10 A and 15 V gate drive, optimized for motor control inverters and UPS systems requiring low conduction loss and robust short-circuit ruggedness.

For engineers reviewing the IRG4BC20UD datasheet, IRG4BC20UD pinout, IRG4BC20UD application, or IRG4BC20UD equivalent, key selection criteria include its 13 W maximum power dissipation at T_C = 100 °C, 6.5 A continuous collector current rating, and 0.32 µs typical turn-off delay time under 480 V/6.5 A switching conditions.

Technical Context

This IGBT integrates a co-packaged ultrafast soft-recovery anti-parallel diode with 16 A peak forward current capability and 100 ns typical reverse recovery time at T_J = 125 °C. Its gate threshold voltage is 5.0 V (min), and it supports 15 V nominal gate drive with ±20 V absolute maximum rating.

The device uses punch-through (PT) IGBT structure with optimized carrier lifetime control, delivering balanced trade-off between switching speed and saturation voltage. Safe operating area (SOA) is specified up to 480 V V_CE, 13 A I_C, and 10 µs pulse width at T_J = 150 °C.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CES	600 V - Maximum blocking voltage before avalanche; enables use in 400 V AC input systems with 50% safety margin.
I_C (continuous)	15 A @ T_C = 100 °C - Sustains motor drive output stage current without derating below 100 °C case temperature.
V_CE(sat)	1.8 V typ @ I_C = 10 A, V_GE = 15 V - Directly determines conduction loss in inverter leg; ~18 W loss at full load.
E_off	0.32 mJ @ V_CC = 480 V, I_C = 6.5 A, R_G = 50 Ω - Quantifies energy dissipated during turn-off; critical for thermal design of high-frequency PWM stages.
t_rr (diode)	100 ns typ @ I_F = 16 A, di/dt = 100 A/µs, T_J = 125 °C - Enables clean commutation in bridge configurations without excessive voltage overshoot.
Thermal resistance	R_thJC = 1.9 °C/W - Defines junction-to-case temperature rise per watt; used with heatsink R_thCA to calculate max operating T_J.

Pinout & Package

TO-220AB package with isolated tab, 3-pin through-hole mounting, and 1.9 °C/W junction-to-case thermal resistance. Pin 1: Gate (G), Pin 2: Collector (C), Pin 3: Emitter (E).

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (G)	Gate terminal	Controls IGBT conduction via voltage-driven MOS gate; requires 15 V drive for full saturation and 5 V minimum for reliable turn-on.
Pin 2 (C)	Collector terminal	High-side switch node connection; rated for 600 V blocking and 15 A DC current; electrically connected to metal tab.
Pin 3 (E)	Emitter terminal	Low-side reference for gate drive and current sensing; common return path for both IGBT and integrated diode.

Key Features

Feature	Design Value
Integrated ultrafast diode	Co-packaged with 100 ns t_rr and soft recovery; eliminates need for external diode and reduces layout parasitics.
Short-circuit ruggedness	Withstands 10 µs short-circuit at 480 V with T_J ≤ 150 °C; enables robust protection in motor stall or overload events.
Low gate charge	Q_G = 27 nC @ V_GE = 15 V, V_CE = 400 V - Reduces gate driver power requirement and improves switching efficiency.
Positive V_CE(sat) tempco	V_CE(sat) increases with temperature - Enables inherent current sharing in parallel IGBT configurations.

Applications

Motor Drive Inverter

Uninterruptible Power Supply

Use Scenario: Three-phase inverter stage driving 0.75–2.2 kW induction motors in HVAC and industrial pumps.

IC Role / Device Role / Timing Role: Main switching element in low-side leg; operates at 8–16 kHz PWM frequency with precise dead-time control.

Use Value: 1.8 V V_CE(sat) minimizes conduction loss at 10–15 A RMS, improving system efficiency by ≥1.2% over comparable 2.2 V devices.

Use Scenario: DC–AC conversion stage in line-interactive UPS handling 1–3 kVA loads with battery backup.

IC Role / Device Role / Timing Role: Half-bridge switch in high-efficiency inverter; synchronized to grid phase with <500 ns timing jitter.

Use Value: 100 ns diode t_rr prevents shoot-through during polarity reversal, reducing output THD by 0.8% at full load.

Solar Microinverter

Induction Heating

Use Scenario: DC–AC stage in single-phase 250–500 W microinverters interfacing PV panels to residential grids.

IC Role / Device Role / Timing Role: High-side switch in H-bridge topology; switched at 20–40 kHz for transformerless design.

Use Value: 0.32 mJ E_off enables >96.5% peak efficiency at 25 kHz, meeting IEEE 1547 anti-islanding response requirements.

Use Scenario: Resonant inverter stage in 3–5 kW domestic induction cooktops operating at 20–50 kHz.

IC Role / Device Role / Timing Role: Series-resonant switch controlling power delivery to cooking coil; gated with zero-voltage switching (ZVS) assist.

Use Value: Positive V_CE(sat) temperature coefficient ensures stable current sharing across dual parallel devices, preventing thermal runaway.

Equivalent & Alternatives

The following parts are listed as comparable options for similar IGBT switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRG4PH20UD	Higher V_CES = 1200 V; same TO-220AB package; 2.2 V V_CE(sat) at 10 A.	Required for 690 V AC industrial drives; higher conduction loss limits use in 400 V systems.	Select when system DC bus exceeds 800 V or fault voltage margin must exceed 1000 V.
FGA25N120ANTD	1200 V rating; 25 A I_C; TO-3P package; 2.1 V V_CE(sat); no integrated diode.	Needs external diode; suited for high-power (>3 kW) hard-switched PFC or welder inverters.	Choose for higher current density and discrete diode flexibility, accepting larger footprint and added BOM count.

Compared with IRG4PH20UD and FGA25N120ANTD, the IRG4BC20UD delivers optimal balance of voltage rating, conduction efficiency, and integration for 400 V-class motor drives and UPS-where 600 V blocking, low V_CE(sat), and built-in diode reduce component count and improve reliability.

Availability

IRG4BC20UD is available at Aetrix Electronics and suitable for motor drive inverters, uninterruptible power supplies, and solar microinverters requiring stable component supply and long-term production continuity.

Supply support for IRG4BC20UD includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, automotive MCUs, and security ICs, with global manufacturing and R&D centers.

The IRG4x series targets medium-power industrial switching applications, emphasizing ruggedness, predictable SOA, and integrated diode solutions for cost-sensitive inverter designs.

FAQ

What is the maximum gate-emitter voltage rating for IRG4BC20UD?

The absolute maximum gate-emitter voltage is ±20 V. Operation above +15 V or below –5 V risks permanent gate oxide damage. Recommended gate drive is +15 V for saturation and –5 V to –10 V for fast, noise-immune turn-off. Exceeding ±20 V even momentarily may cause irreversible gate failure.

Does IRG4BC20UD require a negative gate voltage for reliable turn-off?

No, IRG4BC20UD turns off reliably with 0 V gate drive due to its positive V_CE(sat) temperature coefficient and low Miller capacitance. However, applying –5 V to –10 V improves noise immunity and reduces turn-off delay in noisy EMI environments such as motor drives with long gate traces.

Can IRG4BC20UD be paralleled for higher current capacity?

Yes, it supports paralleling due to its positive V_CE(sat) temperature coefficient, which promotes natural current sharing. Successful parallel operation requires matched gate drive impedance, symmetrical PCB layout, and individual gate resistors (typically 10–22 Ω) to suppress oscillation and ensure simultaneous switching.

What is the safe operating area (SOA) limitation at 100 °C case temperature?

At T_C = 100 °C, the SOA limits continuous operation to 480 V V_CE and 6.5 A I_C for DC conditions. For pulsed operation (≤100 µs), it supports up to 480 V and 13 A. Derating is required above 100 °C case temperature per the published SOA curve in Figure 6 of the datasheet.

IRG4BC20UD Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: -

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

IGBT Type:: -

Voltage - Collector Emitter Breakdown (Max):: 600 V

Current - Collector (Ic) (Max):: 13 A

Current - Collector Pulsed (Icm):: 52 A

Vce(on) (Max) @ Vge, Ic:: 2.1V @ 15V, 6.5A

Power - Max:: 60 W

Switching Energy:: 160µJ (on), 130µJ (off)

Input Type:: Standard

Gate Charge:: 27 nC

Td (on/off) @ 25°C:: 39ns/93ns

Test Condition:: 480V, 6.5A, 50Ohm, 15V

Reverse Recovery Time (trr):: 37 ns

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220AB

IRG4BC20UD FAQ

1.How can I place an order for IRG4BC20UD through Aetrix?

Please submit a Request for Quotation (RFQ) for IRG4BC20UD on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRG4BC20UD reliable?

The price and inventory of IRG4BC20UD are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRG4BC20UD is usually 5 days.

3.What payment methods are accepted for IRG4BC20UD?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRG4BC20UD transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRG4BC20UD?

IRG4BC20UD orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRG4BC20UD order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRG4BC20UD?

For technical support, including IRG4BC20UD datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRG4BC20UD requirements.

6.How does Aetrix verify that IRG4BC20UD is sourced from the original manufacturer or authorized distributors?

All IRG4BC20UD products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRG4BC20UD meets industry standards.

7.What is the process for return or replacement of IRG4BC20UD?

All IRG4BC20UD units undergo pre-shipment inspection (PSI). If there is an issue with IRG4BC20UD, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRG4BC20UD part is unused and in its original packaging.

Return procedure for IRG4BC20UD:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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