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Infineon Technologies IRG4BC20UD-S
- Part No.:
- IRG4BC20UD-S
- Manufacturer:
- Infineon Technologies
- Category:
- Single IGBTs
- Package:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Datasheet:
-
IRG4BC20UD-S.pdf
- Description:
- IGBT 600V 13A 60W D2PAK
- Quantity:
- Payment:
- Shipping:
Inventory:9,195
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Product details
Overview
IRG4BC20UD-S from Infineon (formerly International Rectifier) is a 600 V, 13 A continuous collector current N-channel IGBT co-packaged with an ultrafast soft-recovery HEXFRED diode in a D2Pak (TO-263) package. It delivers 1.85 V typical VCE(on) at 6.5 A/15 VGE, 39 ns turn-on delay, and 110 ns fall time, optimized for 8–40 kHz hard-switching in motor drives and UPS inverters.
For engineers reviewing the IRG4BC20UD-S datasheet, IRG4BC20UD-S pinout, IRG4BC20UD-S application, or IRG4BC20UD-S equivalent, key selection criteria include clamped inductive load capability (52 A), low reverse recovery charge (65–138 nC), junction-to-case thermal resistance (2.1 °C/W), and drop-in compatibility with Gen 3 IR IGBTs in bridge topologies.
Technical Context
This Generation 4 IGBT uses field-stop trench gate technology to achieve tighter parameter distribution and higher efficiency than prior generations. Its co-packaged HEXFRED diode features 37–55 ns reverse recovery time and <5.0 A peak reverse recovery current at 25 °C, minimizing snubbing requirements in half-bridge configurations.
The device operates across –55 to +150 °C junction temperature, supports ±20 V gate drive, and exhibits negative temperature coefficient for VCE(on) and positive coefficient for breakdown voltage (0.69 V/°C), enabling inherent current sharing in parallel operation.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCES | 600 V - Withstands DC bus voltages up to 480 V in 3-phase inverters with 20% margin. |
| IC @ TC = 25°C | 13 A - Sustains full-load motor current without derating at heatsink baseplate ≤25 °C. |
| VCE(on) typ. | 1.85 V @ 6.5 A/15 VGE - Enables <12 W conduction loss at rated current, critical for thermal management. |
| Eoff | 0.13 mJ @ 480 V/6.5 A - Defines energy dissipated during turn-off, directly impacting heatsink sizing. |
| RθJC | 2.1 °C/W - Allows precise junction temperature prediction using measured case temperature. |
| trr | 37–55 ns @ 25 °C - Ultrafast diode recovery reduces voltage overshoot and EMI in high-dV/dt switching. |
| Qrr | 65–138 nC @ 25 °C - Low stored charge minimizes diode-induced turn-on losses in complementary switches. |
Pinout & Package
Package: D2Pak (TO-263), surface-mount, isolated tab (collector connected to tab), 3-pin configuration with standard footprint per PD-95565A outline.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 (Tab) | Collector (C) | Electrically connected to metal tab; requires insulated mounting to heatsink to prevent shorting. |
| Pin 2 | Emitter (E) | Low-side reference node; carries full load current and diode return path in half-bridge leg. |
| Pin 3 | Gate (G) | High-impedance control input; requires 15 V drive for specified VCE(on) and switching speed. |
Key Features
| Feature | Design Value |
|---|---|
| Ultrafast soft-recovery co-packaged diode | trr ≤ 55 ns and Irr ≤ 5.0 A reduce voltage spikes and eliminate need for external snubbers in bridge legs. |
| Generation 4 field-stop IGBT die | Tighter VCE(on) distribution (±0.22 V) improves parallel device current sharing without external ballasting. |
| Optimized for 8–40 kHz hard switching | Combined Eon + Eoff = 0.29 mJ enables efficient operation in servo drives and induction heating inverters. |
| Lead-free and RoHS-compliant | Pb-free plating and halogen-free molding compound meet IPC-J-STD-020 moisture sensitivity level 3 (MSL3). |
Applications
| Industrial Motor Drives | Uninterruptible Power Supplies |
|---|---|
Use Scenario: 3-phase inverter stage driving 0.75–2.2 kW AC induction motors in HVAC blowers and pumps. IC Role / Device Role / Timing Role: High-side/low-side switch in six-pack IGBT module replacement; handles PWM at 16 kHz with 50% duty cycle. Use Value: 1.85 V VCE(on) and 2.1 °C/W RθJC enable 75 °C maximum case temperature at full load, reducing heatsink mass by 30% vs. Gen 3 equivalents. | Use Scenario: Online double-conversion UPS output inverter delivering clean 230 VAC sine wave under battery backup. IC Role / Device Role / Timing Role: Half-bridge leg switch operating at 12 kHz with sinusoidal PWM; co-packaged diode recirculates reactive current. Use Value: 37 ns trr and 65 nC Qrr limit diode recovery overshoot to <150 V, eliminating need for RC snubbers and saving PCB area. |
| Solar Microinverters | Induction Heating Systems |
Use Scenario: DC–AC stage converting 40–60 V PV string output to grid-synchronized 230 VAC at ≤300 W per unit. IC Role / Device Role / Timing Role: Full-bridge primary switch in resonant LLC topology; operates above 100 kHz zero-voltage switching region. Use Value: 0.29 mJ total switching loss at 100 kHz allows >96% conversion efficiency while maintaining TJ < 135 °C with passive cooling. | Use Scenario: Series-resonant inverter powering 1–3 kW cooktop or industrial heating coil at 20–50 kHz. IC Role / Device Role / Timing Role: Hard-switched half-bridge switch handling high di/dt (>200 A/µs); co-packaged diode clamps inductive kickback. Use Value: 52 A ILM rating and 240 A/µs di(rec)M/dt support 250 A peak coil current without secondary breakdown. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar IGBT switch applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRG4PH20UD-SPbF | Higher VCE(on) (2.05 V typ.), lower Qg (22 nC), same 600 V/13 A rating | Better suited for >20 kHz resonant converters due to reduced gate charge | Select when prioritizing switching speed over conduction loss in high-frequency designs. |
| FGA25N120ANTD | 1200 V rating, 25 A IC, higher RθJC (2.5 °C/W), no integrated diode | Required for 600–800 V DC bus systems; external diode selection adds design complexity | Choose only when system voltage exceeds 600 V or higher current headroom is mandatory. |
Compared with IRG4PH20UD-SPbF, the IRG4BC20UD-S offers lower conduction loss but higher gate drive energy; versus FGA25N120ANTD, it provides integrated diode simplicity and better thermal performance at the cost of voltage headroom.
Availability
IRG4BC20UD-S is available at Aetrix Electronics and suitable for industrial motor drives, uninterruptible power supplies, and solar microinverters requiring stable component supply and long-term production continuity.
Supply support for IRG4BC20UD-S includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a global semiconductor leader specializing in power management, sensor, and automotive ICs, with core expertise in high-voltage discrete devices and silicon carbide solutions.
This device belongs to Infineon's Generation 4 IGBT portfolio, engineered specifically for high-efficiency, medium-power industrial inverters where thermal performance, switching fidelity, and diode integration are critical.
FAQ
What is the maximum allowable gate drive voltage for IRG4BC20UD-S?
The absolute maximum gate-to-emitter voltage is ±20 V. Operation at 15 V ensures optimal VCE(on) and switching speed; exceeding 16 V increases risk of gate oxide degradation over time. Gate drive circuits must include clamping diodes to prevent transient overshoot beyond this limit during fast switching transitions.
Can IRG4BC20UD-S be used in parallel configurations?
Yes-its negative temperature coefficient for VCE(on) and tight parameter distribution (±0.22 V) enable stable current sharing. Successful parallel operation requires matched gate resistors (≤5% tolerance), symmetrical PCB layout, and individual gate drive traces to minimize loop inductance imbalance.
Is the integrated diode suitable for freewheeling in boost PFC stages?
No-the HEXFRED diode is optimized for anti-parallel use in bridge legs, not unidirectional boost operation. Its 1.4–1.7 V forward drop and 37–55 ns trr exceed requirements for high-frequency PFC; dedicated ultrafast diodes like IDH08SG60C are recommended instead.
What is the recommended minimum soldering temperature profile for IRG4BC20UD-S?
The peak soldering temperature must not exceed 300 °C for 10 seconds at 1.6 mm from the case. Reflow profiles must comply with IPC-J-STD-020 MSL3, including preheat (125–150 °C), soak (150–200 °C for 60–120 s), and reflow (peak 245–260 °C) phases to avoid internal delamination or bond wire damage.
IRG4BC20UD-S Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Packaging:
- Tube
- Product Status:
- Obsolete
- IGBT Type:
- -
- Voltage - Collector Emitter Breakdown (Max):
- 600 V
- Current - Collector (Ic) (Max):
- 13 A
- Current - Collector Pulsed (Icm):
- 52 A
- Vce(on) (Max) @ Vge, Ic:
- 2.1V @ 15V, 6.5A
- Power - Max:
- 60 W
- Switching Energy:
- 160µJ (on), 130µJ (off)
- Input Type:
- Standard
- Gate Charge:
- 27 nC
- Td (on/off) @ 25°C:
- 39ns/93ns
- Test Condition:
- 480V, 6.5A, 50Ohm, 15V
- Reverse Recovery Time (trr):
- 37 ns
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- D2PAK
IRG4BC20UD-S FAQ
1.How can I place an order for IRG4BC20UD-S through Aetrix?
Please submit a Request for Quotation (RFQ) for IRG4BC20UD-S on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRG4BC20UD-S reliable?
The price and inventory of IRG4BC20UD-S are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRG4BC20UD-S is usually 5 days.
3.What payment methods are accepted for IRG4BC20UD-S?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRG4BC20UD-S transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRG4BC20UD-S?
IRG4BC20UD-S orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRG4BC20UD-S order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRG4BC20UD-S?
For technical support, including IRG4BC20UD-S datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRG4BC20UD-S requirements.
6.How does Aetrix verify that IRG4BC20UD-S is sourced from the original manufacturer or authorized distributors?
All IRG4BC20UD-S products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRG4BC20UD-S meets industry standards.
7.What is the process for return or replacement of IRG4BC20UD-S?
All IRG4BC20UD-S units undergo pre-shipment inspection (PSI). If there is an issue with IRG4BC20UD-S, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRG4BC20UD-S part is unused and in its original packaging.
Return procedure for IRG4BC20UD-S:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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