Infineon Technologies IRG4BC20UD-STRL

Overview

IRG4BC20UD-STRL from Infineon Technologies is a 600 V, 13 A (T_C = 25°C) N-channel IGBT co-packaged with an ultrafast soft-recovery HEXFRED diode in a D2Pak (TO-263) package. It delivers V_CE(on) = 1.85 V @ 6.5 A/15 V, t_r = 15 ns, and t_f = 110 ns at 25°C, optimized for 8–40 kHz hard-switching in motor drives and UPS inverters.

For engineers reviewing the IRG4BC20UD-STRL datasheet, IRG4BC20UD-STRL pinout, IRG4BC20UD-STRL application, or IRG4BC20UD-STRL equivalent, key selection criteria include clamped inductive current rating (52 A), diode reverse recovery time (37–55 ns), gate charge (27–41 nC), and thermal resistance R_θJC = 2.1 °C/W - all critical for high-efficiency bridge-leg design and thermal management.

Technical Context

This Generation 4 IGBT uses field-stop trench-gate technology to achieve tighter parameter distribution and lower conduction losses than prior generations. Its integrated ultrafast soft-recovery diode features trr = 37 ns (T_J = 25°C), Q_rr = 65 nC, and di(rec)M/dt = 240 A/µs - enabling reduced snubber requirements and lower EMI in half-bridge configurations.

The device operates across -55°C to +150°C junction temperature, with V_GE(th) = 3.0–6.0 V and negative temperature coefficient of threshold voltage (-11 mV/°C), supporting stable parallel operation. Gate drive is optimized for ±20 V, with total gate charge of 27 nC (typ.) at V_CC = 400 V and I_C = 6.5 A.

Key Specifications

Pinout & Package

Supplied in industry-standard D2Pak (TO-263) surface-mount package with isolated tab, 3-pin configuration, and 1.44 g mass. Thermal pad on backside requires soldered thermal interface to PCB copper pour or heatsink.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar IGBT + anti-parallel diode applications.

Compared with IRG4BC30KD-SPBF and FGA25N120ANTD, the IRG4BC20UD-STRL offers optimal balance of 600 V blocking, 13 A capability, and integrated soft diode - making it ideal for cost-sensitive, thermally constrained 400 V industrial inverters where layout simplicity and EMI control are critical.

Availability

IRG4BC20UD-STRL is available at Aetrix Electronics and suitable for motor drive inverters, uninterruptible power supplies, solar microinverters, and industrial DC-AC converters requiring stable component supply and long-term production continuity.

Supply support for IRG4BC20UD-STRL includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions, with global manufacturing and R&D infrastructure.

This device belongs to Infineon's Generation 4 IGBT portfolio, designed specifically for high-efficiency, high-frequency hard-switching applications in industrial motor drives, UPS, and renewable energy converters - emphasizing reduced switching loss, tight parameter spread, and integrated diode synergy.

FAQ

What is the maximum gate drive voltage for IRG4BC20UD-STRL?

The absolute maximum gate-to-emitter voltage is ±20 V. Operation above ±15 V increases risk of gate oxide damage, while below ±12 V may cause incomplete turn-on and elevated V_CE(on). Recommended drive is +15 V / -8 V with <50 Ω series resistance to control dV/dt and prevent parasitic turn-on.

Can IRG4BC20UD-STRL be used in parallel configurations?

Yes - its negative V_GE(th) temperature coefficient (-11 mV/°C) and tight parameter distribution enable stable current sharing. Successful paralleling requires matched gate drive paths, symmetrical layout, and individual gate resistors (≤10 Ω) to damp oscillation; derate total current by 15% for two devices.

Does this part include a built-in freewheeling diode?

Yes - it integrates a HEXFRED ultrafast soft-recovery diode in the same D2Pak package. The diode has V_F = 1.4 V @ 8 A, trr = 37 ns (25°C), and Q_rr = 65 nC, eliminating need for external anti-parallel diodes in bridge-leg topologies.

What is the recommended minimum heatsink thermal resistance for continuous 13 A operation?

At T_C = 100°C and P_D = 24 W, R_θJA must be ≤ 2.1 °C/W to maintain T_J ≤ 150°C. With R_θJC = 2.1 °C/W and R_θCS = 0.5 °C/W, the heatsink must provide ≤ 1.5 °C/W R_θSA - achievable with a 50 × 50 × 20 mm aluminum finned heatsink under forced air (2 m/s).