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Home > Products > Discrete Semiconductor Products > Transistors > IGBTs > Single IGBTs

Infineon Technologies IRG4BC20UDSTRLP

Name: IRG4BC20UDSTRLP
Brand: Infineon Technologies
SKU: IRG4BC20UDSTRLP
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRG4BC20UDSTRLP

Manufacturer:: Infineon Technologies

Category:: Single IGBTs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IRG4BC20UDSTRLP.pdf

Description:: IGBT 600V 13A 60W D2PAK

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Product details

Overview

IRG4BC20UDSTRLP from Infineon Technologies is a 600 V, 13 A (T_C = 25°C) N-channel IGBT co-packaged with an ultrafast soft-recovery HEXFRED diode in D2Pak (TO-263) package. It delivers V_CE(on) = 1.85 V @ 6.5 A/15 V, t_d(off) = 93 ns, and Q_g = 27 nC, optimized for 8–40 kHz hard-switching in motor drives and UPS inverters.

For engineers reviewing the IRG4BC20UDSTRLP datasheet, IRG4BC20UDSTRLP pinout, IRG4BC20UDSTRLP application, or IRG4BC20UDSTRLP equivalent, key selection criteria include clamped inductive current rating (I_LM = 52 A), diode reverse recovery time (t_rr = 37–55 ns), thermal resistance (R_θJC = 2.1 °C/W), and gate charge profile for snubberless bridge operation.

Technical Context

This Generation 4 IGBT integrates a monolithic ultrafast soft-recovery diode to minimize reverse recovery losses and eliminate external snubbers in half-bridge configurations. Its optimized charge distribution (Q_ge = 4.5 nC, Q_gc = 10 nC) enables precise turn-on/turn-off timing control under 50 Ω gate drive.

The device operates across –55°C to +150°C junction range with tight parameter distribution, supporting high-efficiency switching in resonant topologies (>200 kHz) and hard-switched PFC stages. Diode recovery characteristics (I_rr = 3.5–5.0 A, Q_rr = 65–138 nC) are characterized at both 25°C and 125°C for thermal-aware design validation.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CES	600 V - Maximum blocking voltage before avalanche; defines DC bus rating in 400 VAC input systems.
I_C @ T_C = 25°C	13 A - Continuous collector current at case temperature 25°C; sets baseline conduction capability.
V_CE(on)	1.85 V @ 6.5 A/15 V - Low saturation voltage reduces conduction loss in motor drive output stages.
t_d(off)	93 ns - Turn-off delay time at T_J = 25°C; critical for dead-time calculation in synchronous rectification.
R_θJC	2.1 °C/W - Junction-to-case thermal resistance; determines heatsink sizing for 24 W dissipation at T_C = 100°C.
t_rr	37–55 ns - Diode reverse recovery time at T_J = 25°C; enables snubberless operation in bridge legs.
Q_g	27 nC - Total gate charge; defines driver power requirement and switching speed trade-off.

Pinout & Package

Supplied in industry-standard D2Pak (TO-263) surface-mount package with isolated tab, rated for 300°C soldering (10 sec, 1.6 mm from case). Thermal pad requires direct heatsink contact for R_θJC = 2.1 °C/W performance.

Pin/Terminal	Circuit Role	Design Meaning
Collector (C)	Main high-side current path	Connected to DC bus positive; carries full load current and withstands 600 V transients.
Gate (G)	Control terminal for IGBT channel	Requires ±20 V absolute max drive; 27 nC total charge dictates gate driver peak current ≥1.5 A.
Emitter (E)	Common reference for IGBT and diode	Serves as return path for both IGBT collector current and anti-parallel diode forward current.

Key Features

Feature	Design Value
Ultrafast soft-recovery co-packaged diode	Reduces E_rec by >40% vs. standard FRD; eliminates need for RC snubbers in H-bridge outputs.
Generation 4 IGBT die	Tighter V_CE(on) distribution (±0.25 V) improves parallel device current sharing in multi-phase inverters.
Optimized for 8–40 kHz hard switching	Enables <1.5 µs total switching time (t_d(on) + t_r + t_d(off) + t_f) at 480 V bus with 50 Ω gate resistor.
Low internal emitter inductance	L_E = 7.5 nH - Minimizes voltage overshoot during di/dt = 200 A/µs turn-off events.

Applications

Motor Drive Inverter Stage

Uninterruptible Power Supply (UPS) Output Stage

Use Scenario: Three-phase inverter driving 1–3 kW induction motors in HVAC compressors.

IC Role / Device Role / Timing Role: High-side switch in leg configuration; handles 6.5 A RMS fundamental current at 12 kHz PWM.

Use Value: Soft diode recovery prevents shoot-through during commutation; 1.85 V V_CE(on) limits conduction loss to <1.2 W per device.

Use Scenario: Online double-conversion UPS delivering clean 230 VAC output from 400 VDC bus.

IC Role / Device Role / Timing Role: Synchronous rectifier in full-bridge inverter; switches at 16 kHz with 50% duty cycle.

Use Value: 52 A I_LM rating supports 2× peak surge current during battery backup transitions without derating.

Industrial DC-AC Solar Inverter

Induction Heating Half-Bridge

Use Scenario: String inverter stage converting 600 VDC PV array output to grid-synchronized AC.

IC Role / Device Role / Timing Role: Low-side switch in NPC topology; conducts 13 A continuous at T_C = 85°C.

Use Value: R_θJC = 2.1 °C/W enables compact heatsink design; 150°C max T_J supports outdoor ambient operation.

Use Scenario: Resonant half-bridge operating at 250 kHz for 2–5 kW induction cooktops.

IC Role / Device Role / Timing Role: Zero-voltage switching (ZVS) switch; leverages soft diode recovery to maintain ZVS boundary.

Use Value: t_rr = 37 ns and Q_rr = 65 nC ensure minimal recovery energy (<0.05 mJ), preserving ZVS efficiency above 200 kHz.

Equivalent & Alternatives

The following parts are listed as comparable options for similar IGBT + anti-parallel diode applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRG4PH20KD-SPBF	Higher V_CES = 1200 V; higher Q_g = 42 nC; same D2Pak package	Targeted for 600–800 VDC industrial drives; less efficient at 400 V bus due to higher V_CE(on)	Select when system DC bus exceeds 650 V or when legacy 1200 V design reuse is required.
FGA25N120ANTD	1200 V rating; lower I_C = 25 A @ 25°C; TO-247 package; no integrated diode	Requires external ultrafast diode; higher thermal resistance (R_θJC = 0.55 °C/W) but higher current capacity	Choose for higher-power designs needing discrete diode optimization or forced-air cooling.

Compared with IRG4PH20KD-SPBF and FGA25N120ANTD, IRG4BC20UDSTRLP provides optimal balance of 600 V blocking, low gate charge, and integrated soft diode-making it preferred for cost-sensitive, space-constrained 400 VAC-input inverters where snubber elimination is critical.

Availability

IRG4BC20UDSTRLP is available at Aetrix Electronics and suitable for motor drive inverters, uninterruptible power supplies, solar microinverters, and induction heating systems requiring stable component supply and long-term production continuity.

Supply support for IRG4BC20UDSTRLP includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, sensor, and automotive ICs, with core expertise in silicon-based power devices and wide-bandgap solutions.

This IGBT belongs to Infineon's Generation 4 "UltraFast CoPack" product line, engineered specifically for high-frequency hard-switching and resonant converter applications where integrated diode softness and tight parameter distribution are essential.

FAQ

What is the maximum allowable gate drive voltage for IRG4BC20UDSTRLP?

The absolute maximum gate-to-emitter voltage is ±20 V. Operation above +15 V or below –10 V risks permanent gate oxide damage. Recommended drive is +15 V for turn-on and –5 V to –10 V for turn-off to ensure robust noise immunity and fast fall time.

Can IRG4BC20UDSTRLP be used in parallel configurations?

Yes-its Generation 4 die exhibits tight V_CE(on) distribution (±0.25 V) and positive temperature coefficient, enabling stable current sharing. Use matched gate resistors (≤5 % tolerance) and symmetrical PCB layout with Kelvin emitter connections for reliable paralleling.

Is the integrated diode suitable for freewheeling in boost PFC circuits?

No-the HEXFRED diode is optimized for anti-parallel use in bridge legs, not unidirectional boost operation. Its Q_rr and t_rr are specified under clamped inductive conditions, not continuous forward conduction; a dedicated PFC diode is recommended.

What is the recommended minimum heatsink thermal resistance for 13 A continuous operation?

At T_C = 100°C and P_D = 24 W, with R_θJC = 2.1 °C/W, the heatsink must provide ≤1.0 °C/W R_θSA (sink-to-ambient) to maintain T_J ≤150°C in still air. Forced airflow reduces required R_θSA to ~2.5 °C/W at 200 LFM.

IRG4BC20UDSTRLP Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: -

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

IGBT Type:: -

Voltage - Collector Emitter Breakdown (Max):: 600 V

Current - Collector (Ic) (Max):: 13 A

Current - Collector Pulsed (Icm):: 52 A

Vce(on) (Max) @ Vge, Ic:: 2.1V @ 15V, 6.5A

Power - Max:: 60 W

Switching Energy:: 160µJ (on), 130µJ (off)

Input Type:: Standard

Gate Charge:: 27 nC

Td (on/off) @ 25°C:: 39ns/93ns

Test Condition:: 480V, 6.5A, 50Ohm, 15V

Reverse Recovery Time (trr):: 37 ns

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: D2PAK

IRG4BC20UDSTRLP FAQ

1.How can I place an order for IRG4BC20UDSTRLP through Aetrix?

Please submit a Request for Quotation (RFQ) for IRG4BC20UDSTRLP on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRG4BC20UDSTRLP reliable?

The price and inventory of IRG4BC20UDSTRLP are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRG4BC20UDSTRLP is usually 5 days.

3.What payment methods are accepted for IRG4BC20UDSTRLP?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRG4BC20UDSTRLP transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRG4BC20UDSTRLP?

IRG4BC20UDSTRLP orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRG4BC20UDSTRLP order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRG4BC20UDSTRLP?

For technical support, including IRG4BC20UDSTRLP datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRG4BC20UDSTRLP requirements.

6.How does Aetrix verify that IRG4BC20UDSTRLP is sourced from the original manufacturer or authorized distributors?

All IRG4BC20UDSTRLP products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRG4BC20UDSTRLP meets industry standards.

7.What is the process for return or replacement of IRG4BC20UDSTRLP?

All IRG4BC20UDSTRLP units undergo pre-shipment inspection (PSI). If there is an issue with IRG4BC20UDSTRLP, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRG4BC20UDSTRLP part is unused and in its original packaging.

Return procedure for IRG4BC20UDSTRLP:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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