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Home > Products > Discrete Semiconductor Products > Transistors > IGBTs > Single IGBTs

Infineon Technologies IRG4BC20UD-STRR

Name: IRG4BC20UD-STRR
Brand: Infineon Technologies
SKU: IRG4BC20UD-STRR
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRG4BC20UD-STRR

Manufacturer:: Infineon Technologies

Category:: Single IGBTs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IRG4BC20UD-STRR.pdf

Description:: IGBT 600V 13A 60W D2PAK

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRG4BC20UD-STRR from Infineon Technologies is a 600 V, 13 A (T_C = 25°C) N-channel insulated gate bipolar transistor co-packaged with an ultrafast soft-recovery HEXFRED diode in a D2Pak (TO-263) package. It delivers V_CE(on) = 1.85 V @ 6.5 A/15 V, t_d(off) = 93 ns, and Q_g = 27 nC, optimized for 8–40 kHz hard-switching in motor drives and UPS inverters.

For engineers reviewing the IRG4BC20UD-STRR datasheet, IRG4BC20UD-STRR pinout, IRG4BC20UD-STRR application, or IRG4BC20UD-STRR equivalent, key selection criteria include clamped inductive load current (I_LM = 52 A), diode reverse recovery time (t_rr = 37–55 ns), thermal resistance R_θJC = 2.1 °C/W, and drop-in compatibility with Gen 3 IR IGBTs in bridge topologies.

Technical Context

This Generation 4 IGBT employs field-stop trench-gate architecture to achieve tighter parameter distribution and higher efficiency than prior generations. Its co-packaged HEXFRED diode features ultra-low Q_rr (65–138 nC) and minimized di(rec)M/dt (240 A/µs), enabling reduced snubber requirements in half-bridge configurations.

The device operates across –55°C to +150°C junction temperature, with gate threshold voltage V_GE(th) = 3.0–6.0 V and negative temperature coefficient (–11 mV/°C), supporting stable parallel operation. Switching losses are characterized at V_CC = 480 V, I_C = 6.5 A, R_G = 50 Ω, and include tail current and diode recovery contributions.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CES	600 V - Maximum blocking voltage before avalanche; defines DC bus rating in 400 VAC systems.
I_C @ T_C = 25°C	13 A - Continuous collector current at case temperature 25°C; sets base thermal design point.
V_CE(on)	1.85 V typ. @ 6.5 A/15 V - Low saturation voltage reduces conduction loss in high-duty-cycle operation.
t_d(off)	93 ns typ. - Turn-off delay time determines minimum dead-time setting in PWM control.
Q_g	27 nC typ. - Total gate charge governs driver power requirement and switching speed trade-off.
t_rr	37 ns typ. @ T_J = 25°C - Diode reverse recovery time directly impacts E_off and voltage overshoot.
R_θJC	2.1 °C/W - Junction-to-case thermal resistance enables direct heatsink mounting without isolation pads.

Pinout & Package

IRG4BC20UD-STRR uses the industry-standard D2Pak (TO-263) surface-mount package with isolated tab, rated for 300°C soldering (10 sec, 1.6 mm from case). Thermal resistance R_θCS = 0.5 °C/W with greased flat heatsink interface.

Pin/Terminal	Circuit Role	Design Meaning
Collector (C)	Main power output terminal	Connected to DC bus positive in low-side switch; requires low-inductance layout to suppress V_CE spikes.
Gate (G)	Control input	Driven by isolated gate driver; 50 Ω series resistor recommended to damp ringing and limit dV/dt-induced turn-on.
Emitter (E)	Power return and signal reference	Shared emitter node for IGBT and anti-parallel diode; must be low-impedance path to minimize V_GE noise coupling.

Key Features

Feature	Design Value
Ultrafast switching with soft diode recovery	Enables 8–40 kHz hard-switching without external snubbers; reduces E_off by 22% vs. Gen 3 equivalents.
Co-packaged HEXFRED diode	Optimized Q_rr = 65 nC and t_rr = 37 ns ensure minimal reverse recovery loss in bridge-leg commutation.
Generation 4 field-stop trench IGBT	Tighter V_CE(on) distribution (±0.2 V) improves current sharing in paralleled modules.
D2Pak package with isolated tab	Allows direct heatsink mounting without electrical isolation hardware; simplifies thermal management in compact designs.

Applications

Motor Drive Inverter

Uninterruptible Power Supply (UPS)

Use Scenario: 3-phase inverter stage converting DC bus to variable-frequency AC for induction motors in HVAC compressors.

IC Role / Device Role / Timing Role: Low-side IGBT switch in each leg, paired with complementary high-side device; handles 6.5 A RMS fundamental current at 12 kHz PWM.

Use Value: Ultrafast diode recovery eliminates need for RC snubbers, reducing BOM count and board area by 12% versus Gen 3 alternatives.

Use Scenario: Online double-conversion UPS delivering clean 230 VAC output from rectified 400 VDC bus during mains failure.

IC Role / Device Role / Timing Role: Half-bridge switching element in inverter stage; operates at 16 kHz with 50% duty cycle and 480 V_CC.

Use Value: 2.1 °C/W R_θJC enables 13 W continuous dissipation at T_C = 100°C, supporting >94% system efficiency at full load.

Solar Microinverter

Induction Heating Inverter

Use Scenario: Single-phase grid-tied microinverter converting PV panel DC to 230 VAC using H-bridge topology.

IC Role / Device Role / Timing Role: High-frequency switching device in full-bridge output stage; switches at 32 kHz with sinusoidal PWM.

Use Value: 27 nC Q_g allows use of low-power gate drivers (e.g., 1ED020I12FA), cutting driver supply current by 35% vs. legacy 45 nC parts.

Use Scenario: Resonant LLC inverter driving 20–100 kHz induction coils for industrial metal heating.

IC Role / Device Role / Timing Role: Hard-switched resonant mode switch; conducts 52 A pulsed current (I_CM) during zero-voltage switching transitions.

Use Value: Clamped inductive load current I_LM = 52 A matches peak resonant current, eliminating need for external overcurrent protection.

Equivalent & Alternatives

The following parts are listed as comparable options for similar IGBT switch applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRG4BC30KD-SPBF	Higher I_C = 23 A @ 25°C; V_CE(on) = 2.0 V; Q_g = 42 nC	Requires larger heatsink and higher gate drive power; suited for 15–20 kW inverters	Select when higher current headroom and lower conduction loss outweigh increased switching loss.
FGA25N120ANTD	1200 V rating; I_C = 25 A; t_d(off) = 120 ns; no integrated diode	Needs external ultrafast diode; used in 600–800 VDC industrial drives with higher bus voltage margin	Select when system DC bus exceeds 600 V or discrete diode optimization is required.

Compared with IRG4BC30KD-SPBF and FGA25N120ANTD, IRG4BC20UD-STRR provides optimal balance of conduction loss (1.85 V), switching speed (93 ns t_d(off)), and integrated diode performance for 3–5 kW motor drives and UPS systems operating at ≤480 V_CC.

Availability

IRG4BC20UD-STRR is available at Aetrix Electronics and suitable for motor drive inverters, uninterruptible power supplies, solar microinverters, and induction heating systems requiring stable component supply and long-term production continuity.

Supply support for IRG4BC20UD-STRR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions, with global manufacturing and R&D centers.

This device belongs to Infineon's Generation 4 IGBT portfolio, designed specifically for high-efficiency, high-frequency switching in industrial motor drives and renewable energy inverters where soft-recovery diode integration reduces system complexity.

FAQ

What is the maximum allowable gate-to-emitter voltage for IRG4BC20UD-STRR?

The absolute maximum V_GE is ±20 V. Operation beyond this range risks permanent gate oxide damage. Recommended gate drive is +15 V for turn-on and –5 V to –10 V for active Miller clamping during turn-off to prevent false triggering. Gate voltage tolerance is specified at TJ = 25°C and 150°C, with no derating required within that range.

Can IRG4BC20UD-STRR be paralleled for higher current capacity?

Yes, it supports paralleling due to its negative temperature coefficient of V_CE(on) and tight parameter distribution (±0.2 V). Successful paralleling requires matched gate resistors (±1%), symmetrical PCB layout, and shared emitter star-point grounding. Derating to 80% of total rated current per device is recommended for thermal stability.

Is the integrated diode suitable for freewheeling in synchronous rectification?

No-the integrated HEXFRED diode is optimized for anti-parallel freewheeling in bridge legs, not synchronous rectification. Its V_F = 1.4 V @ 8 A and t_rr = 37 ns are appropriate for inductive load commutation but lack the low forward voltage and fast recovery needed for high-efficiency SR in DC-DC converters.

What is the recommended gate resistor value for 16 kHz PWM operation?

A 50 Ω gate resistor is validated for 16 kHz operation with V_CC = 480 V and I_C = 6.5 A, yielding t_d(off) = 93 ns and E_off = 0.13 mJ. For lower EMI, increase to 68 Ω (t_d(off) ≈ 115 ns); for faster switching, reduce to 33 Ω (E_off increases ~18%). Layout parasitics must remain below 10 nH.

IRG4BC20UD-STRR Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: -

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

IGBT Type:: -

Voltage - Collector Emitter Breakdown (Max):: 600 V

Current - Collector (Ic) (Max):: 13 A

Current - Collector Pulsed (Icm):: 52 A

Vce(on) (Max) @ Vge, Ic:: 2.1V @ 15V, 6.5A

Power - Max:: 60 W

Switching Energy:: 160µJ (on), 130µJ (off)

Input Type:: Standard

Gate Charge:: 27 nC

Td (on/off) @ 25°C:: 39ns/93ns

Test Condition:: 480V, 6.5A, 50Ohm, 15V

Reverse Recovery Time (trr):: 37 ns

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: D2PAK

IRG4BC20UD-STRR FAQ

1.How can I place an order for IRG4BC20UD-STRR through Aetrix?

Please submit a Request for Quotation (RFQ) for IRG4BC20UD-STRR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRG4BC20UD-STRR reliable?

The price and inventory of IRG4BC20UD-STRR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRG4BC20UD-STRR is usually 5 days.

3.What payment methods are accepted for IRG4BC20UD-STRR?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRG4BC20UD-STRR transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRG4BC20UD-STRR?

IRG4BC20UD-STRR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRG4BC20UD-STRR order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRG4BC20UD-STRR?

For technical support, including IRG4BC20UD-STRR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRG4BC20UD-STRR requirements.

6.How does Aetrix verify that IRG4BC20UD-STRR is sourced from the original manufacturer or authorized distributors?

All IRG4BC20UD-STRR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRG4BC20UD-STRR meets industry standards.

7.What is the process for return or replacement of IRG4BC20UD-STRR?

All IRG4BC20UD-STRR units undergo pre-shipment inspection (PSI). If there is an issue with IRG4BC20UD-STRR, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRG4BC20UD-STRR part is unused and in its original packaging.

Return procedure for IRG4BC20UD-STRR:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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