Infineon Technologies IRG4BC20UPBF

Overview

IRG4BC20UPBF from Infineon Technologies (formerly International Rectifier) is a 600 V, 13 A N-channel IGBT in TO-220AB package, optimized for hard-switching up to 40 kHz and resonant-mode operation beyond 200 kHz. It delivers V_CE(on) = 1.85 V @ 6.5 A/15 V, E_on = 0.10 mJ and E_off = 0.12 mJ at 480 V, and is rated for motor drives, induction heating, and UPS inverters.

For engineers reviewing the IRG4BC20UPBF datasheet, IRG4BC20UPBF pinout, IRG4BC20UPBF application, or IRG4BC20UPBF equivalent, key selection criteria include clamped inductive load capability (52 A), gate charge (27 nC typ.), thermal resistance (R_θJC = 2.1 °C/W), and TJ = –55 to +150 °C operation - all critical for high-reliability power conversion designs.

Technical Context

This Generation 4 IGBT uses field-stop trench-gate structure to achieve tighter parameter distribution and lower conduction + switching losses versus Gen 3 predecessors. Its 7.5 nH internal emitter inductance and low C_res (7.4 pF) support fast, low-overshoot switching under hard-switched conditions.

The device integrates an anti-parallel diode with 5.0 mJ reverse avalanche energy rating and is characterized across –55 to +150 °C junction temperature, enabling stable performance in industrial motor control and solar string inverters where thermal cycling and transient robustness are essential.

Key Specifications

Pinout & Package

Package: TO-220AB, single-ended through-hole, isolated tab (collector connected to tab), 3-pin configuration with mounting hole.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar IGBT switching applications.

Compared with IRG4BC30UD and FGA25N120ANTD, the IRG4BC20UPBF offers optimal balance of 600 V rating, 13 A capability, and TO-220AB compatibility - making it ideal for cost-sensitive, space-constrained 1–3 kW power stages where thermal management and gate drive simplicity are prioritized.

Availability

IRG4BC20UPBF is available at Aetrix Electronics and suitable for motor drives, uninterruptible power supplies, and induction heating systems requiring stable component supply and long-term industrial lifecycle support.

Supply support for IRG4BC20UPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and energy markets.

The IRG4x series belongs to Infineon's Generation 4 IGBT portfolio, engineered specifically for high-efficiency, high-frequency power conversion in industrial motor control, UPS, and resonant converters - emphasizing thermal robustness, tight parametric spread, and ease of system integration.

FAQ

What is the maximum recommended gate resistor value for reliable switching?

The datasheet specifies R_G = 50 Ω for characterization, and recommends 22–68 Ω range for balancing switching speed and gate oscillation suppression. Values above 100 Ω increase turn-off delay beyond 130 ns and raise E_off significantly; values below 15 Ω risk gate driver overstress and parasitic turn-on due to high di/dt coupling.

Does IRG4BC20UPBF include an integrated freewheeling diode?

No - IRG4BC20UPBF is a standalone IGBT die in TO-220AB package with collector-connected tab. It does not integrate a freewheeling diode. However, its 5.0 mJ reverse avalanche energy rating allows controlled inductive turn-off without external diode in some low-duty-cycle applications, though a dedicated ultrafast diode is strongly recommended for standard inverter use.

Can this IGBT be used in parallel configurations?

Yes - Generation 4's tighter V_CE(on) and V_GE(th) distribution enables stable current sharing. Successful parallel operation requires matched gate resistors (±5%), symmetrical PCB layout, individual gate routing, and shared heatsink with uniform thermal impedance. Derating to 80% of total rated current is advised per parallel pair.

What is the safe operating area (SOA) limitation at 150 °C junction temperature?

At T_J = 150 °C, the SOA is limited by second breakdown to 10 A at 400 V (Fig. 12). Pulse width must remain ≤5 µs for currents above 13 A. The device supports 52 A clamped inductive load only at T_C ≤ 25 °C and with proper snubbing - sustained operation above 13 A requires active cooling and derating per Fig. 4.