Infineon Technologies IRG4BC30FDPBF

Overview

IRG4BC30FDPBF from Infineon Technologies is a 600V, 30A insulated gate bipolar transistor (IGBT) with integrated ultrafast soft-recovery anti-parallel diode in TO-220AB package. It delivers 21W power dissipation at T_C = 25°C, features 2.3Ω typical gate resistance, and supports hard-switching up to 5 kHz and resonant-mode operation beyond 20 kHz - used in motor control inverters and UPS output stages.

For engineers reviewing the IRG4BC30FDPBF datasheet, IRG4BC30FDPBF pinout, IRG4BC30FDPBF application, or IRG4BC30FDPBF equivalent, key selection criteria include V_CE(off) = 600V, I_C(cont) = 30A, t_rr = 120 ns (T_J = 125°C), Q_g = 75 nC, and co-packaged diode softness (di/dt_rec < 100 A/µs).

Technical Context

This Generation 4 IGBT uses field-stop trench-gate structure for reduced conduction and switching losses versus Gen 3. Its co-packaged HEXFRED™ diode exhibits ultra-low reverse recovery charge (Q_rr = 95 nC at I_F = 30A) and soft recovery waveform (no voltage overshoot under 100 A/µs di/dt).

The device operates with V_GE = 15 V gate drive, achieves 1.9 V typical V_CE(sat) at I_C = 30A and T_J = 125°C, and maintains safe operating area (SOA) up to 480 V and 34 A in single-pulse mode.

Key Specifications

Pinout & Package

IRG4BC30FDPBF is housed in industry-standard TO-220AB package with isolated mounting tab, lead-free finish, and 2.54 mm pin pitch. The package supports ≤ 21 W continuous power dissipation at T_C = 25°C with appropriate heatsinking.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar IGBT switch applications.

Compared with IRG4BC20FDPBF, the IRG4BC30FDPBF delivers +50% current headroom and +50% gate charge, requiring stronger gate drivers but enabling higher-power density inverters; versus FGA25N120ANTD, it trades voltage rating for integrated diode convenience and lower conduction loss at 400 V systems.

Availability

IRG4BC30FDPBF is available at Aetrix Electronics and suitable for motor drive inverters, uninterruptible power supplies (UPS), solar microinverters, and induction heating systems requiring stable component supply and long-term industrial lifecycle support.

Supply support for IRG4BC30FDPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and automotive ICs, with global manufacturing and R&D centers.

This IGBT belongs to Infineon's "Short Circuit Rated" (SCR) Generation 4 portfolio, designed specifically for industrial motor drives and UPS systems demanding robust short-circuit withstand time (≥5 µs) and repeatable switching performance under thermal stress.

FAQ

What is the maximum junction temperature for continuous operation?

The IRG4BC30FDPBF has a rated maximum junction temperature of 150°C. Continuous operation at this limit requires strict thermal management: case temperature must be held ≤100°C per derating curve, and transient SOA must be verified using the published single-pulse thermal impedance curve (Z_thJC) to avoid second breakdown.

Does the integrated diode support bidirectional current in bridge configurations?

Yes - the co-packaged HEXFRED™ diode conducts forward current up to 30 A (T_C = 100°C) and recovers with softness (no current tail), making it suitable for freewheeling paths in half-bridge and full-bridge topologies. Its reverse recovery characteristics are characterized at V_R = 200 V and di/dt = 100 A/µs.

What gate resistor value is recommended for 4 kHz hard-switching?

A 23 Ω gate resistor is specified in the datasheet for 4 kHz hard-switching with V_GE = 15 V. This value balances switching speed (t_on/t_off ≈ 120/200 ns) and gate oscillation suppression; lower values increase E_on/E_off and risk overshoot, while higher values raise conduction loss due to prolonged transition times.

Is IRG4BC30FDPBF suitable for paralleling multiple devices?

Yes - Generation 4's tight parameter distribution (±10% V_CE(sat), ±15% Q_g) enables stable current sharing. Successful paralleling requires matched gate drive loops, symmetrical layout, and individual emitter resistors (0.1 Ω) for dynamic balancing; thermal coupling via shared heatsink is also recommended.