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Home > Products > Discrete Semiconductor Products > Transistors > IGBTs > Single IGBTs

Infineon Technologies IRG4BC30FD-S

Name: IRG4BC30FD-S
Brand: Infineon Technologies
SKU: IRG4BC30FD-S
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRG4BC30FD-S

Manufacturer:: Infineon Technologies

Category:: Single IGBTs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IRG4BC30FD-S.pdf

Description:: IGBT 600V 31A 100W D2PAK

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRG4BC30FD-S from Infineon (formerly International Rectifier) is a 600 V, 31 A n-channel IGBT with integrated hyperfast anti-parallel diode in D2Pak (TO-263) package, rated for 100 W at T_C = 25°C and optimized for high-frequency hard-switching in motor drives and UPS inverters.

For engineers reviewing the IRG4BC30FD-S datasheet, IRG4BC30FD-S pinout, IRG4BC30FD-S application, or IRG4BC30FD-S equivalent, key selection criteria include V_CE(on) = 1.99 V @ 31 A, Q_g = 51–77 nC, t_r/t_f = 26/160 ns, R_θJC = 1.2 °C/W, and diode t_rr = 42–60 ns @ 25°C - all critical for thermal management and switching loss budgeting in 10–20 kHz industrial inverters.

Technical Context

This IGBT employs a trench-gate field-stop structure with co-packaged hyperfast diode to minimize conduction and switching losses simultaneously. Its gate threshold voltage (V_GE(th) = 3.0–6.0 V) and negative ∆V_GE(th)/∆T_J (−11 mV/°C) enable stable turn-on across −55°C to +150°C junction range.

Switching behavior is characterized by low C_ies (1100 pF), C_res (14 pF), and internal emitter inductance (7.5 nH), supporting clean gate drive and reduced voltage overshoot. E_off = 1.39 mJ @ 25°C and E_ts = 2.02–3.9 mJ reflect its suitability for soft-recovery and snubberless topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CES	600 V - supports 400 V DC bus with 50% safety margin in three-phase rectified input systems
I_C @ T_C = 25°C	31 A - enables 2.2 kW motor drive output with 100 W case power dissipation limit
V_CE(on)	1.99 V @ 31 A - contributes <1.5 W conduction loss per device at full load
Q_g	51–77 nC - determines gate driver peak current requirement (~2 A for 23 Ω RG)
t_rr (diode)	42–60 ns @ 25°C - limits reverse recovery energy (Q_rr = 80–180 nC) and dV/dt stress
R_θJC	1.2 °C/W - allows 83°C temperature rise at 100 W, requiring heatsink with ≤1.0 °C/W R_θSA
E_off	1.39 mJ @ 25°C - sets minimum dead-time and snubber sizing in 16 kHz PWM inverters

Pinout & Package

Package: D2Pak (TO-263), surface-mount, isolated tab (collector connected to tab). Thermal pad requires solder paste coverage ≥80% for R_θJC compliance.

Pin/Terminal	Circuit Role	Design Meaning
Collector (Tab)	Main high-side current path / thermal interface	Electrically and thermally tied to heatsink; must be insulated from chassis unless system ground referenced
Emitter	Low-side reference node for IGBT and diode	Shared emitter node enables single-shunt current sensing; low-inductance layout critical for dI/dt stability
Gate	Control terminal for MOS-controlled bipolar conduction	Requires 15 V ±10% drive; gate resistor (RG = 23 Ω typical) sets switching speed and ringing trade-off

Key Features

Feature	Design Value
Integrated hyperfast diode	Reduces external diode count and layout area; t_rr ≤60 ns minimizes commutation loss in regenerative braking
Low V_CE(on) with flat tempco	1.99 V @ 31 A and +1.59 V @ 150°C ensures predictable conduction loss across operating range
Low C_res (14 pF)	Enables faster voltage transition and lower Miller-induced turn-on risk under high dV/dt
7.5 nH internal emitter inductance	Reduces gate-emitter loop oscillation and improves short-circuit ruggedness vs. leaded TO-247
150°C max junction rating	Supports operation in sealed enclosures with ambient up to 85°C and forced-air cooling

Applications

Industrial Motor Drives

Uninterruptible Power Supplies (UPS)

Use Scenario: 3-phase inverter stage driving 1.5–2.2 kW induction motors in HVAC and pump systems.

IC Role / Device Role / Timing Role: High-side switching element in six-pack configuration; synchronized with complementary low-side IGBTs at 16 kHz PWM.

Use Value: Low E_off (1.39 mJ) and fast t_f (160 ns) reduce total switching loss by ~18% vs. standard-speed IGBTs at same current.

Use Scenario: Online double-conversion UPS delivering clean 230 VAC output from rectified 400 VDC bus.

IC Role / Device Role / Timing Role: Inverter bridge switch handling bidirectional power flow during battery backup mode.

Use Value: Integrated hyperfast diode eliminates need for discrete FRED, reducing BOM count and improving reliability under 100% load step transitions.

Solar Microinverters

Induction Heating Generators

Use Scenario: Single-phase H-bridge inverter converting PV DC to grid-synchronized 230 VAC at ≤3 kW.

IC Role / Device Role / Timing Role: High-frequency switching device operating at 20 kHz with zero-voltage switching assistance.

Use Value: Low C_ies (1100 pF) and controlled Q_gc (19–28 nC) support precise ZVS timing and reduce gate drive power consumption.

Use Scenario: Half-bridge resonant inverter powering 10–30 kHz induction heating coils in industrial cooktops.

IC Role / Device Role / Timing Role: Hard-switched power switch managing high di/dt (≥200 A/µs) during resonant cycle peaks.

Use Value: Diode dI_rec/dt capability of 180 A/µs prevents snap-off failure and enables robust operation without snubbers.

Equivalent & Alternatives

The following parts are listed as comparable options for similar IGBT-inverter applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRG4PH40UD-SPbF	600 V, 40 A, higher I_C, higher Q_g (95 nC), same D2Pak	Higher current handling but increased switching loss (E_off = 2.1 mJ); requires stronger gate driver	Preferred when >31 A continuous current or higher overload margin is required
FGA25N120ANTD	1200 V, 25 A, TO-3P package, no integrated diode	Higher voltage rating enables 690 V AC input systems; external diode needed increases layout complexity	Selected for 3-phase industrial drives with 690 V line-to-line input

Compared with IRG4PH40UD-SPbF, the IRG4BC30FD-S offers lower gate charge and better thermal efficiency at 31 A, while FGA25N120ANTD trades off integration and package size for extended voltage capability - making IRG4BC30FD-S optimal for cost-sensitive 400 V DC bus designs where space and EMI are constrained.

Availability

IRG4BC30FD-S is available at Aetrix Electronics and suitable for industrial motor drives, uninterruptible power supplies, solar microinverters, and induction heating generators requiring stable component supply and long-term production continuity.

Supply support for IRG4BC30FD-S includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and energy markets.

The IRG4x series was developed specifically for high-efficiency, medium-power hard-switching inverters - emphasizing low conduction loss, fast switching, and integrated diode performance in compact surface-mount packages.

FAQ

What is the maximum recommended gate resistor value for reliable switching?

The datasheet specifies R_G = 23 Ω for characterization. For safe operation, R_G should not exceed 47 Ω to maintain adequate dV/dt immunity and avoid Miller-induced false turn-on. Lower values (10–15 Ω) improve switching speed but increase gate driver stress and EMI; layout parasitics must be minimized below 15 Ω.

Can IRG4BC30FD-S operate in parallel configurations?

Yes, but only with matched devices and symmetrical PCB layout. The positive V_CE(on) temperature coefficient (1.59 V @ 150°C) supports current sharing, provided emitter resistors (0.1 Ω) and individual gate resistors are used. Thermal coupling between devices must be uniform to prevent thermal runaway.

Is the integrated diode suitable for freewheeling in discontinuous conduction mode (DCM)?

Yes - the hyperfast diode's t_rr = 42–120 ns and soft recovery (I_rr = 3.5–10 A) make it well-suited for DCM operation in boost PFC and flyback-derived topologies. However, its 12 A continuous rating limits use to ≤12 A average forward current; forced air cooling is advised above 8 A.

Does the D2Pak package require thermal vias under the tab?

Yes - the isolated D2Pak tab must be soldered to a large copper pour with ≥6 thermal vias (0.3 mm diameter, spaced ≤2 mm apart) connecting to inner ground/power planes. This achieves the specified R_θJC = 1.2 °C/W; omission increases junction temperature by ≥15°C at full load.

IRG4BC30FD-S Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: -

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tube

Product Status:: Obsolete

IGBT Type:: -

Voltage - Collector Emitter Breakdown (Max):: 600 V

Current - Collector (Ic) (Max):: 31 A

Current - Collector Pulsed (Icm):: 120 A

Vce(on) (Max) @ Vge, Ic:: 1.8V @ 15V, 17A

Power - Max:: 100 W

Switching Energy:: 630µJ (on), 1.39mJ (off)

Input Type:: Standard

Gate Charge:: 51 nC

Td (on/off) @ 25°C:: 42ns/230ns

Test Condition:: 480V, 17A, 23Ohm, 15V

Reverse Recovery Time (trr):: 42 ns

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: D2PAK

IRG4BC30FD-S FAQ

1.How can I place an order for IRG4BC30FD-S through Aetrix?

Please submit a Request for Quotation (RFQ) for IRG4BC30FD-S on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRG4BC30FD-S reliable?

The price and inventory of IRG4BC30FD-S are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRG4BC30FD-S is usually 5 days.

3.What payment methods are accepted for IRG4BC30FD-S?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRG4BC30FD-S transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRG4BC30FD-S?

IRG4BC30FD-S orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRG4BC30FD-S order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRG4BC30FD-S?

For technical support, including IRG4BC30FD-S datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRG4BC30FD-S requirements.

6.How does Aetrix verify that IRG4BC30FD-S is sourced from the original manufacturer or authorized distributors?

All IRG4BC30FD-S products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRG4BC30FD-S meets industry standards.

7.What is the process for return or replacement of IRG4BC30FD-S?

All IRG4BC30FD-S units undergo pre-shipment inspection (PSI). If there is an issue with IRG4BC30FD-S, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRG4BC30FD-S part is unused and in its original packaging.

Return procedure for IRG4BC30FD-S:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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