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Infineon Technologies IRG4BC30FD-STRR

Part No.:
IRG4BC30FD-STRR
Manufacturer:
Infineon Technologies
Category:
Single IGBTs
Package:
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Datasheet:
AetrixIRG4BC30FD-STRR.pdf
Description:
IGBT 600V 31A 100W D2PAK
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:8,058

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Product details

Overview

IRG4BC30FD-STRR from Infineon (formerly International Rectifier) is a 600 V, 31 A n-channel IGBT with integrated hyperfast co-pack diode in D2Pak (TO-263) package, rated for 100 W at TC = 25°C and optimized for high-efficiency motor drives and UPS inverters operating up to 20 kHz.

For engineers reviewing the IRG4BC30FD-STRR datasheet, IRG4BC30FD-STRR pinout, IRG4BC30FD-STRR application, or IRG4BC30FD-STRR equivalent, key selection criteria include VCE(sat) @ 17 A (1.8 V typ), Qg (51–77 nC), tr/tf (26/160 ns), RθJC (1.2 °C/W), and diode reverse recovery parameters (trr = 42–120 ns, Qrr = 80–600 nC).

Technical Context

This IGBT employs a trench-gate field-stop structure enabling low conduction loss and fast switching with controlled tail current. Its integrated hyperfast diode features soft recovery and low Qrr, minimizing voltage overshoot during commutation in hard-switched topologies.

The device operates with ±20 V gate drive, exhibits negative temperature coefficient for VGE(th) (−11 mV/°C), and delivers stable VCE(sat) up to TJ = 150°C (1.7 V @ 17 A). RθJC = 1.2 °C/W supports direct heatsink mounting via its isolated D2Pak case.

Key Specifications

ParameterValue and Actual Design Meaning
VCES600 V - withstands DC bus voltages up to 400 V nominal systems with 50% safety margin
IC @ TC = 25°C31 A - continuous current rating enabling 2.2 kW motor drive stage at 100°C case temp
VCE(sat) @ 17 A, 25°C1.8 V typ - reduces conduction loss to ~30.6 W at full load, critical for thermal management
Qg51–77 nC - determines gate driver power requirement and influences switching speed vs. EMI trade-off
tr/tf26/160 ns @ 17 A - enables 20 kHz PWM operation while limiting dv/dt-induced noise and cross-talk
trr (diode)42–120 ns - ensures clean turn-on of complementary IGBT with minimal voltage spike in bridge legs
RθJC1.2 °C/W - allows direct mounting to heatsink without thermal interface pad degradation concerns

Pinout & Package

Package: D2Pak (TO-263), surface-mount, isolated case (pin 3 electrically connected to emitter, case thermally conductive but electrically isolated).

Pin/TerminalCircuit RoleDesign Meaning
Pin 1 (Tab)Collector (C)Large copper tab - primary heat path to heatsink; must be electrically isolated from PCB ground plane
Pin 2Gate (G)High-impedance MOS-controlled terminal - requires low-inductance gate loop and 15 V ±10% drive
Pin 3Emitter (E)Common reference for gate drive and load return - connects to source of anti-parallel diode

Key Features

FeatureDesign Value
Integrated hyperfast diodeSoft reverse recovery (Qrr = 80–600 nC) minimizes commutation losses and snubber stress in inverter half-bridges
Trench Field-Stop IGBT structureEnables low VCE(sat) (1.8 V) and fast switching (tf = 160 ns) without compromising ruggedness
Isolated D2Pak packageElectrically isolated collector tab eliminates need for insulating washer; simplifies thermal design
Rated for 150°C junction operationSupports high ambient environments (e.g., enclosed industrial drives) with derated current to 17 A at TC = 100°C

Applications

Motor Drive InvertersUninterruptible Power Supplies (UPS)

Use Scenario: 3-phase BLDC or induction motor control in HVAC compressors and industrial pumps.

IC Role / Device Role / Timing Role: Main switching device in inverter leg; handles 400 V DC bus and 15–20 kHz PWM.

Use Value: Low VCE(sat) and soft diode recovery reduce system-level conduction + switching losses by >12% vs. standard IGBT+FRD solutions.

Use Scenario: Online double-conversion UPS output stage delivering clean 230 VAC sine wave.

IC Role / Device Role / Timing Role: High-side/low-side switch in full-bridge inverter; synchronized with DSP-controlled dead-time.

Use Value: Controlled fall time (tf = 160 ns) and low Qrr suppress output voltage distortion and THD under nonlinear loads.

Solar MicroinvertersInduction Heating Systems

Use Scenario: Single-phase grid-tied microinverter converting 30–60 V DC PV input to 230 VAC.

IC Role / Device Role / Timing Role: H-bridge switch operating at 30–50 kHz with zero-voltage switching assist.

Use Value: Hyperfast diode enables reliable ZVS transition; trr < 60 ns prevents shoot-through during resonant transitions.

Use Scenario: Medium-frequency (20–50 kHz) series-resonant inverter powering 3–10 kW induction cooktops.

IC Role / Device Role / Timing Role: Half-bridge switch handling high di/dt (≥200 A/µs) during resonant current peaks.

Use Value: di(rec)/dt rating ≥180 A/µs ensures robust diode recovery under extreme dI/dt, preventing thermal runaway.

Equivalent & Alternatives

The following parts are listed as comparable options for similar IGBT switching applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
FGA25N120ANTD1200 V rating, higher VCE(sat) (2.2 V @ 17 A), larger Qg (95 nC)Better for 600–800 V DC link; less suitable for 20 kHz+ due to slower switchingSelect when higher voltage margin required and switching frequency ≤10 kHz
IXGN32N60B2600 V, lower Qg (38 nC), no integrated diode, TO-247 packageRequires external ultrafast diode; better for high-speed SMPS but adds layout complexitySelect when gate drive power is constrained and discrete diode placement is acceptable

Compared with FGA25N120ANTD and IXGN32N60B2, IRG4BC30FD-STRR uniquely balances 600 V capability, low-loss switching, and integrated hyperfast diode in a thermally efficient D2Pak-making it optimal for cost-sensitive, space-constrained 20 kHz motor and UPS inverters where layout simplicity and thermal reliability are prioritized.

Availability

IRG4BC30FD-STRR is available at Aetrix Electronics and suitable for motor drive inverters, uninterruptible power supplies (UPS), solar microinverters, and induction heating systems requiring stable component supply and long-term production continuity.

Supply support for IRG4BC30FD-STRR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and energy applications.

The IRG4BC30FD-STRR belongs to Infineon's legacy "IR" IGBT portfolio, designed specifically for medium-power, medium-frequency (10–50 kHz) industrial inverters demanding low conduction loss, soft switching behavior, and robust short-circuit ruggedness.

FAQ

What is the maximum recommended gate resistor value for reliable switching?

A gate resistor of 23 Ω is specified in the datasheet for switching characterization (td(off), tf). For reliable operation, use 10–33 Ω with a 15 V gate drive; values above 47 Ω increase switching losses and risk incomplete turn-on at high temperature. Always verify gate waveform integrity with oscilloscope probing at the device pins.

Does the integrated diode require external snubbing in a half-bridge configuration?

No external snubber is required when used within rated conditions (VCC ≤ 480 V, di/dt ≤ 200 A/µs). The hyperfast diode's soft recovery (Qrr ≤ 180 nC at 125°C) and low trr (≤120 ns) inherently limit voltage overshoot. However, a small RC snubber (100 Ω + 100 pF) is recommended for designs operating near maximum ratings or with long PCB traces.

Can IRG4BC30FD-STRR be paralleled for higher current capacity?

Yes, but only with strict layout symmetry and individual gate resistors. The device has a negative temperature coefficient for VCE(sat), supporting current sharing. Use matched gate drivers, identical trace lengths, and Kelvin emitter connections. Derate total current by 20% per additional device and ensure ΔTJ across paralleled units stays below 5°C.

What is the short-circuit withstand time at 400 V bus voltage?

At VCE = 400 V, TJ = 150°C, and VGE = 15 V, the device sustains short-circuit for 10 µs before failure. This is validated per JEDEC JESD22-A109. Operation beyond this time risks irreversible latch-up. Implement fast desaturation detection (< 1 µs response) for protection in critical applications.

IRG4BC30FD-STRR Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
-
Package/Case:
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
IGBT Type:
-
Voltage - Collector Emitter Breakdown (Max):
600 V
Current - Collector (Ic) (Max):
31 A
Current - Collector Pulsed (Icm):
120 A
Vce(on) (Max) @ Vge, Ic:
1.8V @ 15V, 17A
Power - Max:
100 W
Switching Energy:
630µJ (on), 1.39mJ (off)
Input Type:
Standard
Gate Charge:
51 nC
Td (on/off) @ 25°C:
42ns/230ns
Test Condition:
480V, 17A, 23Ohm, 15V
Reverse Recovery Time (trr):
42 ns
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
D2PAK

IRG4BC30FD-STRR FAQ

1.How can I place an order for IRG4BC30FD-STRR through Aetrix?

Please submit a Request for Quotation (RFQ) for IRG4BC30FD-STRR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRG4BC30FD-STRR reliable?

The price and inventory of IRG4BC30FD-STRR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRG4BC30FD-STRR is usually 5 days.

3.What payment methods are accepted for IRG4BC30FD-STRR?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRG4BC30FD-STRR transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRG4BC30FD-STRR?

IRG4BC30FD-STRR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRG4BC30FD-STRR order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRG4BC30FD-STRR?

For technical support, including IRG4BC30FD-STRR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRG4BC30FD-STRR requirements.

6.How does Aetrix verify that IRG4BC30FD-STRR is sourced from the original manufacturer or authorized distributors?

All IRG4BC30FD-STRR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRG4BC30FD-STRR meets industry standards.

7.What is the process for return or replacement of IRG4BC30FD-STRR?

All IRG4BC30FD-STRR units undergo pre-shipment inspection (PSI). If there is an issue with IRG4BC30FD-STRR, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRG4BC30FD-STRR part is unused and in its original packaging.

Return procedure for IRG4BC30FD-STRR:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

IRG4BC30FD-STRR Tags

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