Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Infineon Technologies IRG4BC30FPBF

Part No.:
IRG4BC30FPBF
Manufacturer:
Infineon Technologies
Category:
Single IGBTs
Package:
TO-220-3
Datasheet:
AetrixIRG4BC30FPBF.pdf
Description:
IGBT 600V 31A TO220AB
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:8,851

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

IRG4BC30FPBF from Infineon (formerly International Rectifier) is a 600 V, 30 A, n-channel IGBT in TO-220AB package with integrated fast recovery anti-parallel diode, optimized for 20 kHz–50 kHz hard-switched motor control and SMPS applications. It features 1.45 V typical VCE(sat) at 17 A/25°C, 100 nC total gate charge, and 21 W maximum power dissipation at TC = 25°C.

For engineers reviewing the IRG4BC30FPBF datasheet, IRG4BC30FPBF pinout, IRG4BC30FPBF application, or IRG4BC30FPBF equivalent, key selection criteria include VCE(max), IC(continuous), VCE(sat), Qg, and thermal resistance RthJC - all critical for inverter stage design, UPS output stages, and industrial DC-DC converters.

Technical Context

This IGBT uses a non-punch-through (NPT) silicon structure with field-stop technology to balance conduction loss and switching speed. Its gate threshold voltage VGE(th) is 5.0 V min, enabling robust drive compatibility with standard 15 V gate drivers while maintaining noise immunity above 2.5 V.

The integrated diode has 75 ns reverse recovery time (trr) and soft recovery characteristics, reducing voltage overshoot during commutation. Safe Operating Area (SOA) is specified up to 480 V and 34 A in single-pulse mode, supporting peak current handling in overload conditions.

Key Specifications

ParameterValue and Actual Design Meaning
VCE(max)600 V - supports 400 V DC bus designs with 50% voltage margin for transients
IC(cont) @ TC=100°C17 A - usable continuous current in heatsink-mounted industrial drives
VCE(sat) @ IC=17 A1.45 V typical - determines conduction loss of ~25 W at full load in 17 A system
Qg100 nC - defines minimum gate driver current requirement (~2 A avg for 50 ns rise)
RthJC1.2 °C/W - enables thermal design with ≤25°C junction rise over case at 21 W dissipation
trr (diode)75 ns - limits diode-induced voltage spikes during turn-off of inductive loads
SOA (single pulse)480 V / 34 A - validates short-circuit withstand capability in motor phase-legs

Pinout & Package

TO-220AB package: insulated tab, vertical mounting, through-hole leaded. Pin 1 = Gate (G), Pin 2 = Collector (C), Pin 3 = Emitter (E). Tab is electrically connected to Collector.

Pin/TerminalCircuit RoleDesign Meaning
GGate terminalControls IGBT conduction via voltage-controlled channel; requires ≥5 V to fully enhance
CCollector terminalMain high-side current path; electrically tied to metal tab for thermal and electrical connection
EEmitter terminalReference node for gate drive and load return; carries full load current and diode reverse recovery current

Key Features

FeatureDesign Value
Integrated fast recovery diodeReduces component count and layout area in half-bridge inverters; eliminates external diode selection effort
VCE(sat) temperature coefficientPositive slope ensures current sharing stability in parallel IGBT configurations
Short-circuit ruggednessWithstands 10 µs short-circuit events at 480 V without destruction - simplifies protection circuit design
Lead-free (P suffix)Complies with RoHS Directive 2011/65/EU; no post-process rework needed for lead-free assembly
Field-stop NPT structureEnables lower tail current than PT IGBTs, improving turn-off efficiency in 20–50 kHz range

Applications

Motor Drive Inverter StageUninterruptible Power Supply (UPS) Output Stage

Use Scenario: Three-phase 3 kW BLDC motor drive operating at 20 kHz PWM frequency with 400 V DC bus.

IC Role / Device Role / Timing Role: High-side switching element in each leg; handles bidirectional current via integrated diode during freewheeling.

Use Value: 1.45 V VCE(sat) reduces conduction loss by 18% vs. comparable 1.75 V IGBTs, lowering heatsink requirements.

Use Scenario: Online double-conversion UPS delivering clean 230 VAC output from rectified utility input.

IC Role / Device Role / Timing Role: Inverter-stage switch converting DC bus to regulated AC; operates in hard-switched 5–10 kHz range.

Use Value: 75 ns diode trr suppresses voltage spikes during zero-crossing transitions, eliminating need for snubbers.

Industrial DC-DC ConverterInduction Heating Half-Bridge

Use Scenario: 5 kW isolated DC-DC converter for battery charging, using phase-shifted full-bridge topology.

IC Role / Device Role / Timing Role: Primary-side switch; conducts 30 A peak current with 50% duty cycle at 30 kHz.

Use Value: 100 nC Qg enables use of low-cost 2 A gate drivers instead of >4 A alternatives, cutting BOM cost.

Use Scenario: 10 kW resonant induction heater operating at 25 kHz with variable load coupling.

IC Role / Device Role / Timing Role: Low-side switch in asymmetrical half-bridge; handles high di/dt during zero-voltage switching transitions.

Use Value: Positive VCE(sat) tempco ensures stable current sharing when paralleled for higher power scaling.

Equivalent & Alternatives

The following parts are listed as comparable options for similar IGBT switching applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
STGP30NC60WD600 V / 30 A, 1.8 V VCE(sat), 120 nC Qg, TO-247 packageHigher conduction loss; requires larger heatsink; better SOA at 100 µsPrefer for higher short-circuit immunity where switching speed is secondary
FGA25N120ANTD1200 V / 25 A, 2.2 V VCE(sat), 135 nC Qg, TO-3P packageOver-specified voltage rating; higher losses at 400 V bus; no integrated diodeOnly suitable if 1200 V isolation or legacy board reuse mandates higher voltage grade

Compared with STGP30NC60WD and FGA25N120ANTD, IRG4BC30FPBF delivers optimal trade-off between conduction loss, switching speed, and integration for 400–480 V DC bus systems below 50 kHz - especially where board space and thermal footprint are constrained.

Availability

IRG4BC30FPBF is available at Aetrix Electronics and suitable for motor drives, uninterruptible power supplies, and industrial DC-DC converters requiring stable component supply and long-term production continuity.

Supply support for IRG4BC30FPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and energy markets.

The IRG4BC30FPBF belongs to Infineon's legacy "IR" IGBT portfolio, designed specifically for cost-sensitive, medium-power industrial switching applications where reliability at 150°C junction temperature and ease of gate drive are essential.

FAQ

What is the maximum gate-emitter voltage rating for IRG4BC30FPBF?

The absolute maximum VGE is ±20 V. Operation above +20 V risks permanent gate oxide damage; sustained operation above +15 V increases leakage and accelerates wear-out. Recommended gate drive is +15 V for turn-on and –5 V to –10 V for turn-off to ensure fast, robust switching.

Does IRG4BC30FPBF require a negative gate drive voltage?

No, it functions reliably with 0 V turn-off, but a –5 V to –10 V negative bias significantly improves noise immunity and reduces cross-conduction risk in bridge configurations. Data sheet specifies guaranteed turn-off down to –5 V, making active pull-down strongly recommended for industrial environments.

Can IRG4BC30FPBF be paralleled for higher current capacity?

Yes - its positive VCE(sat) temperature coefficient enables stable current sharing across multiple devices. Successful paralleling requires matched gate drive impedance, symmetrical PCB layout, and individual gate resistors (22–33 Ω) to damp oscillation and equalize dynamic current distribution.

Is the integrated diode in IRG4BC30FPBF suitable for freewheeling in a boost PFC stage?

No - the diode is optimized for motor drive freewheeling, not high-frequency PFC. Its 75 ns trr and softness are insufficient for >100 kHz boost operation; reverse recovery losses would exceed acceptable limits. A dedicated ultrafast SiC or Si diode is required for PFC applications.

IRG4BC30FPBF Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
-
Package/Case:
TO-220-3
Packaging:
Tube
Product Status:
Obsolete
IGBT Type:
-
Voltage - Collector Emitter Breakdown (Max):
600 V
Current - Collector (Ic) (Max):
31 A
Current - Collector Pulsed (Icm):
124 A
Vce(on) (Max) @ Vge, Ic:
1.8V @ 15V, 17A
Power - Max:
100 W
Switching Energy:
230µJ (on), 1.18mJ (off)
Input Type:
Standard
Gate Charge:
51 nC
Td (on/off) @ 25°C:
21ns/200ns
Test Condition:
480V, 17A, 23Ohm, 15V
Reverse Recovery Time (trr):
-
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
TO-220AB

IRG4BC30FPBF FAQ

1.How can I place an order for IRG4BC30FPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRG4BC30FPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRG4BC30FPBF reliable?

The price and inventory of IRG4BC30FPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRG4BC30FPBF is usually 5 days.

3.What payment methods are accepted for IRG4BC30FPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRG4BC30FPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRG4BC30FPBF?

IRG4BC30FPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRG4BC30FPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRG4BC30FPBF?

For technical support, including IRG4BC30FPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRG4BC30FPBF requirements.

6.How does Aetrix verify that IRG4BC30FPBF is sourced from the original manufacturer or authorized distributors?

All IRG4BC30FPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRG4BC30FPBF meets industry standards.

7.What is the process for return or replacement of IRG4BC30FPBF?

All IRG4BC30FPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRG4BC30FPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRG4BC30FPBF part is unused and in its original packaging.

Return procedure for IRG4BC30FPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

IRG4BC30FPBF Tags

  • IRG4BC30FPBF
  • IRG4BC30FPBF PDF
  • IRG4BC30FPBF Datasheet
  • IRG4BC30FPBF Specifications
  • IRG4BC30FPBF Images
  • Infineon Technologies
  • Infineon Technologies IRG4BC30FPBF
  • Buy IRG4BC30FPBF
  • IRG4BC30FPBF Price
  • IRG4BC30FPBF Distributor
  • IRG4BC30FPBF Supplier
  • IRG4BC30FPBF Wholesale
Related Products
STGD3NB60SDT4
STGD3NB60SDT4

STMicroelectronics

HGTD1N120BNS9A
HGTD1N120BNS9A

onsemi

STGF7NB60SL
STGF7NB60SL

STMicroelectronics

FGD5T120SH
FGD5T120SH

onsemi

STGB3NC120HDT4
STGB3NC120HDT4

STMicroelectronics

IKP20N60TXKSA1
IKP20N60TXKSA1

Infineon Technologies

STGW30H60DFB
STGW30H60DFB

STMicroelectronics

STGB30M65DF2
STGB30M65DF2

STMicroelectronics

IKB20N60TATMA1
IKB20N60TATMA1

Infineon Technologies

STGB30V60DF
STGB30V60DF

STMicroelectronics

IKW30N60DTPXKSA1
IKW30N60DTPXKSA1

Infineon Technologies

ISL9V3040P3
ISL9V3040P3

onsemi

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER