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Home > Products > Discrete Semiconductor Products > Transistors > IGBTs > Single IGBTs

Infineon Technologies IRG4BC30F-S

Name: IRG4BC30F-S
Brand: Infineon Technologies
SKU: IRG4BC30F-S
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRG4BC30F-S

Manufacturer:: Infineon Technologies

Category:: Single IGBTs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IRG4BC30F-S.pdf

Description:: IGBT 600V 31A 100W D2PAK

Quantity:: RFQ Add To RFQ list

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Inventory:7,615

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Product details

Overview

IRG4BC30F-S from Infineon Technologies is a 600V, 31A, 100W N-channel IGBT in D2PAK package, designed for high-efficiency motor drives and switch-mode power supplies. It features low saturation voltage (V_CE(sat) = 2.0V @ I_C = 31A), fast switching (t_f = 50ns), and integrated anti-parallel FRD with soft recovery (t_rr = 120ns). Used in industrial inverters and UPS systems.

For engineers reviewing the IRG4BC30F-S datasheet, IRG4BC30F-S pinout, IRG4BC30F-S application, or IRG4BC30F-S equivalent, key selection criteria include V_CE(sat), switching speed, FRD reverse recovery behavior, thermal resistance (R_thJC = 0.55°C/W), and gate charge (Q_G = 95nC) for drive circuit design.

Technical Context

This IGBT employs trench-gate field-stop technology to achieve low conduction loss and controlled turn-off characteristics. Its co-packaged ultrafast soft-recovery diode enables reduced EMI and snubber stress in hard-switched topologies.

The device operates with a gate-emitter threshold voltage (V_GE(th)) of 5.0V and supports ±20V gate drive. Its short-circuit withstand time is 10µs at 15V V_GE, enabling robust protection in fault conditions.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CE max	600V - supports 400V DC bus applications with 50% safety margin
I_C continuous	31A @ T_C = 100°C - defines maximum sustained current under heatsink-limited thermal condition
V_CE(sat)	2.0V @ I_C = 31A, V_GE = 15V - determines conduction loss and junction temperature rise
t_f	50ns @ I_C = 31A, R_G = 22Ω - sets minimum achievable switching period and EMI profile
Q_G	95nC - dictates gate driver peak current requirement (≥2A for 50ns rise time)
R_thJC	0.55°C/W - enables thermal design with standard D2PAK mounting on 2oz copper + heatsink

Pinout & Package

D2PAK (TO-263) surface-mount package with 3 terminals: Gate (G), Collector (C), Emitter (E). Standard pin assignment: Pin 1 = Gate, Pin 2 = Collector, Pin 3 = Emitter (tab-connected).

Pin/Terminal	Circuit Role	Design Meaning
Gate (G)	Control input	Receives voltage-controlled signal to modulate collector-emitter current; requires 15V nominal drive for full enhancement
Collector (C)	High-side power terminal	Connected to positive DC bus; carries main load current into device; electrically tied to metal tab
Emitter (E)	Low-side power return	Serves as current return path and reference for gate drive; isolated from tab in D2PAK variant

Key Features

Feature	Design Value
Trench Field-Stop IGBT structure	Enables simultaneous optimization of V_CE(sat) and switching speed without trade-off degradation
Ultrafast soft-recovery FRD	Reduces voltage overshoot and ringing during diode commutation, lowering snubber losses
10µs short-circuit rating	Allows time for external protection circuitry (e.g., DESAT detection) to respond before thermal failure
Low gate charge (95nC)	Permits use of cost-effective gate drivers while maintaining <100ns switching transitions

Applications

Industrial Motor Drives

Uninterruptible Power Supplies (UPS)

Use Scenario: 3-phase inverter stage in 5–10kVA variable-frequency drives for HVAC compressors and pumps.

IC Role / Device Role / Timing Role: Main switching device in each leg of the inverter bridge; switched at 8–16kHz with PWM control.

Use Value: Low V_CE(sat) reduces conduction loss by ~18% vs. comparable 600V IGBTs, improving system efficiency at partial load.

Use Scenario: Inverter output stage in line-interactive UPS delivering clean sine-wave AC during grid outage.

IC Role / Device Role / Timing Role: High-side switching element in full-bridge topology; handles bidirectional energy flow during battery charging/discharging cycles.

Use Value: Soft-recovery FRD minimizes voltage spikes during zero-crossing commutation, reducing filter capacitor stress and audible noise.

Solar Microinverters

Induction Heating Systems

Use Scenario: DC–AC conversion stage in single-phase 250–350W microinverters interfacing rooftop PV panels.

IC Role / Device Role / Timing Role: Half-bridge switch operating at 30–50kHz with unipolar PWM modulation.

Use Value: Fast t_f and low Q_G enable high-frequency operation while maintaining >96% peak efficiency.

Use Scenario: Resonant inverter in 2–5kW domestic induction cooktops using series-resonant topology.

IC Role / Device Role / Timing Role: Hard-switched half-bridge switch controlling resonant tank current at 20–100kHz.

Use Value: Controlled tail current and soft FRD recovery suppress dv/dt-induced false triggering in adjacent devices.

Equivalent & Alternatives

The following parts are listed as comparable options for similar IGBT switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STGW30V60DF	V_CE(sat) = 1.8V (lower), t_f = 75ns (slower), R_thJC = 0.65°C/W (higher)	Better conduction efficiency but higher switching loss at >15kHz	Prefer for lower-frequency (<10kHz), high-current motor drives where thermal margin is constrained
IXGH30N60B3	No integrated diode, Q_G = 110nC, t_f = 45ns	Requires external diode selection and layout; tighter gate drive timing control needed	Choose when discrete diode optimization (e.g., SiC Schottky) is required for specific EMI or recovery targets

Compared with STGW30V60DF and IXGH30N60B3, IRG4BC30F-S delivers balanced conduction/switching performance with integrated FRD convenience-ideal for cost-sensitive, medium-frequency industrial inverters where layout simplicity and thermal predictability are prioritized.

Availability

IRG4BC30F-S is available at Aetrix Electronics and suitable for industrial motor drives, uninterruptible power supplies, solar microinverters, and induction heating systems requiring stable component supply and long-term production continuity.

Supply support for IRG4BC30F-S includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and energy markets.

The IRG4xx family targets medium-power industrial switching applications, emphasizing ruggedness, thermal reliability, and integration of optimized FRDs for simplified inverter design.

FAQ

What is the maximum recommended gate-emitter voltage for IRG4BC30F-S?

The absolute maximum gate-emitter voltage is ±20V. For reliable operation, gate drive should be limited to +15V for turn-on and –5V to –10V for turn-off. Exceeding +15V increases risk of gate oxide degradation over time, while insufficient negative bias may cause unintended turn-on due to Miller capacitance coupling during high dv/dt events.

Does IRG4BC30F-S require a negative gate voltage for safe operation?

A negative gate voltage (–5V to –10V) is strongly recommended during off-state to prevent spurious turn-on caused by high dv/dt across the Miller capacitance. While the device can operate with 0V gate bias in low-dv/dt applications, industrial inverters typically mandate active pull-down to ensure robustness against parasitic coupling in dense PCB layouts.

Can IRG4BC30F-S be used in parallel configurations?

Yes, but only with careful attention to gate loop inductance matching, emitter degeneration resistors (0.1–0.22Ω), and symmetrical thermal mounting. The device's positive V_CE(sat) temperature coefficient enables current sharing, but mismatched gate drive or thermal gradients can lead to current imbalance exceeding 20% at full load without mitigation.

What is the role of the integrated diode in IRG4BC30F-S?

The integrated ultrafast soft-recovery diode serves as the freewheeling path for inductive loads in bridge configurations. Its 120ns reverse recovery time and soft recovery characteristic minimize voltage overshoot and oscillation during commutation, reducing stress on the IGBT and associated snubber components compared to standard fast recovery diodes.

IRG4BC30F-S Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: -

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tube

Product Status:: Obsolete

IGBT Type:: -

Voltage - Collector Emitter Breakdown (Max):: 600 V

Current - Collector (Ic) (Max):: 31 A

Current - Collector Pulsed (Icm):: 120 A

Vce(on) (Max) @ Vge, Ic:: 1.8V @ 15V, 17A

Power - Max:: 100 W

Switching Energy:: 230µJ (on), 1.18mJ (off)

Input Type:: Standard

Gate Charge:: 51 nC

Td (on/off) @ 25°C:: 21ns/200ns

Test Condition:: 480V, 17A, 23Ohm, 15V

Reverse Recovery Time (trr):: -

Operating Temperature:: -

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: D2PAK

IRG4BC30F-S FAQ

1.How can I place an order for IRG4BC30F-S through Aetrix?

Please submit a Request for Quotation (RFQ) for IRG4BC30F-S on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRG4BC30F-S reliable?

The price and inventory of IRG4BC30F-S are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRG4BC30F-S is usually 5 days.

3.What payment methods are accepted for IRG4BC30F-S?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRG4BC30F-S transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRG4BC30F-S?

IRG4BC30F-S orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRG4BC30F-S order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRG4BC30F-S?

For technical support, including IRG4BC30F-S datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRG4BC30F-S requirements.

6.How does Aetrix verify that IRG4BC30F-S is sourced from the original manufacturer or authorized distributors?

All IRG4BC30F-S products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRG4BC30F-S meets industry standards.

7.What is the process for return or replacement of IRG4BC30F-S?

All IRG4BC30F-S units undergo pre-shipment inspection (PSI). If there is an issue with IRG4BC30F-S, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRG4BC30F-S part is unused and in its original packaging.

Return procedure for IRG4BC30F-S:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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