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Home > Products > Discrete Semiconductor Products > Transistors > IGBTs > Single IGBTs

Infineon Technologies IRG4BC30KDPBF

Name: IRG4BC30KDPBF
Brand: Infineon Technologies
SKU: IRG4BC30KDPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRG4BC30KDPBF

Manufacturer:: Infineon Technologies

Category:: Single IGBTs

Package:: TO-220-3

Datasheet:: IRG4BC30KDPBF.pdf

Description:: IGBT 600V 28A 100W TO220AB

Quantity:: RFQ Add To RFQ list

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Inventory:3,801

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Product details

Overview

IRG4BC30KDPBF from Infineon Technologies is a 600V, 15A n-channel IGBT in TO-220AB package with 1.8V typical V_GE(th), 3.7Ω typical R_CE(sat) at T_J = 25°C, and 160ns typical t_fall; designed for hard-switched motor control inverters and UPS systems requiring robust short-circuit withstand capability.

For engineers reviewing the IRG4BC30KDPBF datasheet, IRG4BC30KDPBF pinout, IRG4BC30KDPBF application, or IRG4BC30KDPBF equivalent, this device supports 16A DC collector current at T_C = 100°C, delivers 2.4mJ total switching loss at V_CC = 480V/I_C = 16A/R_G = 1Ω, and features integrated fast-recovery anti-parallel diode with Q_rr = 120nC at I_F = 12A/V_R = 200V/T_J = 125°C.

Technical Context

This IGBT employs a punch-through (PT) structure with field-stop layer and optimized carrier lifetime control to balance conduction loss and switching speed. Its gate threshold voltage of 1.8V enables direct drive from standard 15V logic-level controllers without level-shifting.

The integrated diode exhibits soft recovery with peak reverse recovery di/dt ≤ 1000 A/µs at I_F = 12A, reducing EMI in bridge-leg configurations. Thermal resistance R_thJC is 1.0°C/W, supporting 60W continuous power dissipation at T_C = 100°C.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CES	600V - maximum blocking voltage before avalanche breakdown under open-gate condition
I_C (DC)	15A - continuous collector current rating at T_C = 100°C, defining thermal design margin
R_CE(sat)	3.7Ω - on-state voltage drop determines conduction loss: V_CE(sat) ≈ 1.9V @ I_C = 15A
t_fall	160ns - fall time at V_CC = 480V/I_C = 16A/R_G = 1Ω, directly impacts switching loss and EMI
Q_g	72nC - total gate charge required for full turn-on, sets minimum gate driver current requirement
E_off	2.4mJ - turn-off energy at V_CC = 480V/I_C = 16A/R_G = 1Ω, critical for snubber and thermal sizing
T_J(max)	150°C - maximum junction temperature, constrains heatsink selection and derating curves

Pinout & Package

IRG4BC30KDPBF uses the industry-standard TO-220AB package with insulated tab, featuring three terminals: Collector (pin 1), Gate (pin 2), and Emitter (pin 3). The tab is electrically connected to the collector and thermally coupled to the die for efficient heat transfer.

Pin/Terminal	Circuit Role	Design Meaning
Collector (Tab)	Main high-side power terminal	Electrically tied to metal tab; requires isolation from heatsink unless system ground reference permits
Gate	Control input for MOS-controlled bipolar conduction	High-impedance input requiring ≥15V drive for full saturation; sensitive to noise coupling
Emitter	Power return and signal reference node	Serves as common reference for gate drive and current sensing; layout must minimize inductance

Key Features

Feature	Design Value
Short-circuit withstand time	10µs at V_CC = 480V/T_J = 150°C - enables reliable protection in fault conditions without desaturation circuitry
Integrated anti-parallel diode	Soft-recovery Q_rr = 120nC - reduces voltage overshoot and EMI during freewheeling in half-bridge topologies
Low gate charge	Q_g = 72nC - allows use of low-power gate drivers (e.g., IR2110) without external buffer stages
Thermal resistance	R_thJC = 1.0°C/W - supports compact heatsink designs for 60W continuous operation at T_C = 100°C
Positive V_GE(th) tempco	+1.2mV/°C - improves current sharing stability in parallel IGBT configurations

Applications

Industrial Motor Drives

Uninterruptible Power Supplies

Use Scenario: Three-phase inverter stage in 1–3kW AC induction motor drives operating at 4kHz PWM frequency.

IC Role / Device Role / Timing Role: Main switching element in each leg of the inverter bridge, handling bidirectional current flow via integrated diode during dead-time.

Use Value: 3.7Ω R_CE(sat) limits conduction loss to <1.2W per device at 15A, while 160ns t_fall keeps switching loss below 1.5W at 4kHz.

Use Scenario: Output inverter stage in line-interactive UPS delivering 2kVA with sine-wave output.

IC Role / Device Role / Timing Role: High-side switch in full-bridge topology converting DC bus (400V) to 230VAC output with active power factor correction.

Use Value: 10µs short-circuit rating allows safe shutdown during output short events; integrated diode eliminates need for discrete freewheeling diodes.

Solar Microinverters

Induction Heating Systems

Use Scenario: DC–AC conversion stage in single-phase 300W microinverter interfacing PV panel to grid.

IC Role / Device Role / Timing Role: Low-side switch in H-bridge configuration, commutating at 16–20kHz with zero-voltage switching assistance.

Use Value: Soft-recovery diode (Q_rr = 120nC) minimizes turn-on losses during ZVS transitions, improving efficiency by ~1.2% over discrete diode solutions.

Use Scenario: Resonant inverter stage in 5kW domestic induction cooktop operating at 20–50kHz.

IC Role / Device Role / Timing Role: Half-bridge switch driving series-resonant tank, conducting high di/dt currents with minimal voltage overshoot.

Use Value: Peak reverse recovery di/dt ≤ 1000 A/µs prevents destructive voltage spikes across resonant capacitor, eliminating need for RC snubbers.

Equivalent & Alternatives

The following parts are listed as comparable options for similar IGBT switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRG4PH40KD	Higher V_CES = 1200V, lower I_C = 10A, R_CE(sat) = 4.2Ω, t_fall = 220ns	Better suited for 600–1000V DC link applications; higher conduction loss at same current	Select when system DC bus exceeds 600V or higher voltage margin is required
FGA25N120ANTD	1200V rating, 25A I_C, R_CE(sat) = 2.8Ω, no integrated diode	Requires external ultrafast diode; higher current capacity but larger footprint (TO-3P)	Choose for higher power density needs where discrete diode integration is acceptable

Compared with IRG4BC30KDPBF, IRG4PH40KD trades off switching speed and conduction loss for higher voltage capability, while FGA25N120ANTD offers greater current handling and lower R_CE(sat) but demands additional diode components and board space.

Availability

IRG4BC30KDPBF is available at Aetrix Electronics and suitable for industrial motor drives, uninterruptible power supplies, solar microinverters, and induction heating systems requiring stable component supply and long-term production continuity.

Supply support for IRG4BC30KDPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, automotive ICs, and security solutions, with global manufacturing and R&D centers.

This device belongs to Infineon's "IGBT2" generation product line, engineered for cost-sensitive industrial inverters requiring balanced switching performance, ruggedness, and ease of gate drive implementation.

FAQ

What is the maximum gate-emitter voltage rating for IRG4BC30KDPBF?

The absolute maximum V_GE is ±20V per the official Infineon datasheet. Operation above +15V or below –5V risks permanent gate oxide damage. Recommended gate drive is +15V for saturation and –5V to –10V for reliable turn-off, especially under high dv/dt conditions.

Does IRG4BC30KDPBF require a negative gate voltage for reliable turn-off?

No, it operates reliably with 0V gate turn-off in most applications. However, applying –5V to –10V improves immunity to Miller-induced false turn-on in high-speed, high-dv/dt bridge configurations, particularly when paralleling multiple devices or operating near maximum ratings.

Can IRG4BC30KDPBF be used in parallel configurations?

Yes, its positive V_GE(th) temperature coefficient (+1.2mV/°C) promotes natural current sharing. Successful parallel operation requires matched gate drive impedance, symmetrical PCB layout, and individual gate resistors (typically 5–10Ω) to damp oscillations and ensure simultaneous switching.

What is the short-circuit withstand capability of IRG4BC30KDPBF?

It sustains rated current for 10µs at V_CC = 480V and T_J = 150°C before failure. This enables implementation of simple overcurrent protection using fixed-time blanking (e.g., 8µs) followed by desaturation detection, without requiring complex active current limiting circuits.

IRG4BC30KDPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: -

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

IGBT Type:: -

Voltage - Collector Emitter Breakdown (Max):: 600 V

Current - Collector (Ic) (Max):: 28 A

Current - Collector Pulsed (Icm):: 56 A

Vce(on) (Max) @ Vge, Ic:: 2.7V @ 15V, 16A

Power - Max:: 100 W

Switching Energy:: 600µJ (on), 580µJ (off)

Input Type:: Standard

Gate Charge:: 67 nC

Td (on/off) @ 25°C:: 60ns/160ns

Test Condition:: 480V, 16A, 23Ohm, 15V

Reverse Recovery Time (trr):: 42 ns

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220AB

IRG4BC30KDPBF FAQ

1.How can I place an order for IRG4BC30KDPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRG4BC30KDPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRG4BC30KDPBF reliable?

The price and inventory of IRG4BC30KDPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRG4BC30KDPBF is usually 5 days.

3.What payment methods are accepted for IRG4BC30KDPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRG4BC30KDPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRG4BC30KDPBF?

IRG4BC30KDPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRG4BC30KDPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRG4BC30KDPBF?

For technical support, including IRG4BC30KDPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRG4BC30KDPBF requirements.

6.How does Aetrix verify that IRG4BC30KDPBF is sourced from the original manufacturer or authorized distributors?

All IRG4BC30KDPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRG4BC30KDPBF meets industry standards.

7.What is the process for return or replacement of IRG4BC30KDPBF?

All IRG4BC30KDPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRG4BC30KDPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRG4BC30KDPBF part is unused and in its original packaging.

Return procedure for IRG4BC30KDPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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