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Home > Products > Discrete Semiconductor Products > Transistors > IGBTs > Single IGBTs

Infineon Technologies IRG4BC30KDSTRLP

Name: IRG4BC30KDSTRLP
Brand: Infineon Technologies
SKU: IRG4BC30KDSTRLP
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRG4BC30KDSTRLP

Manufacturer:: Infineon Technologies

Category:: Single IGBTs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IRG4BC30KDSTRLP.pdf

Description:: IGBT 600V 28A 100W D2PAK

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRG4BC30KDSTRLP from Infineon Technologies is an n-channel 600 V, 15 A IGBT with 2.2 Ω typical gate resistance, 180 nC total gate charge, and D2PAK (TO-263) surface-mount package. It integrates an ultrafast co-packaged anti-parallel diode (t_rr = 120 ns at I_F = 12 A), supports 480 V DC bus operation, and is rated for 160 °C junction temperature in motor drive inverters.

For engineers reviewing the IRG4BC30KDSTRLP datasheet, IRG4BC30KDSTRLP pinout, IRG4BC30KDSTRLP application, or IRG4BC30KDSTRLP equivalent, key selection criteria include its 15 A continuous collector current at T_C = 100 °C, 2.2 Ω gate resistance enabling controlled switching loss trade-offs, integrated diode recovery performance, and D2PAK thermal capability for high-power density designs.

Technical Context

This IGBT uses a non-punch-through (NPT) silicon structure optimized for hard-switching in 400–480 V industrial inverters. Its gate threshold voltage is 5.0 V (min), and it features a positive temperature coefficient for collector current, enabling inherently stable parallel operation without current-sharing resistors.

The integrated diode exhibits soft reverse recovery with Q_rr = 120 nC (typ) at V_R = 200 V, I_F = 12 A, and T_J = 125 °C - critical for minimizing voltage overshoot and EMI in three-phase bridge configurations.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CES	600 V - Maximum blocking voltage for use in 400 V AC input rectified systems with safety margin.
I_C (continuous)	15 A at T_C = 100 °C - Enables 1.5 kW motor drive stage without forced air cooling.
Q_g	180 nC - Determines gate driver power requirement; requires ≥2 A peak drive capability for 100 ns turn-on.
R_G (typ)	2.2 Ω - Sets switching speed vs. E_on/E_off balance; lower values increase dI/dt stress.
t_rr (diode)	120 ns - Limits diode-induced voltage spikes during commutation in inverter leg cross-conduction.
T_J (max)	160 °C - Allows operation under sustained overload conditions in sealed enclosures.
E_off	2.4 mJ at V_CE = 480 V, I_C = 16 A - Quantifies energy dissipated during turn-off; defines heatsink sizing baseline.

Pinout & Package

D2PAK (TO-263) surface-mount package with copper leadframe, exposed drain pad for thermal conduction to PCB ground plane. Standard 3-pin layout: Gate (G), Collector (C), Emitter (E).

Pin/Terminal	Circuit Role	Design Meaning
G	Control terminal	Receives voltage-controlled signal to modulate collector-emitter conduction; requires low-impedance drive path.
C	High-side power terminal	Connected to DC bus positive; carries full load current and must be routed with low-inductance layout.
E	Power return / reference node	Serves as emitter reference for gate drive and current sensing; tied to PCB thermal pad for heat extraction.

Key Features

Feature	Design Value
Ultrafast co-packaged diode	Soft reverse recovery (Q_rr = 120 nC) reduces snubber requirements and EMI filter size.
Positive I_C tempco	Enables stable current sharing in paralleled IGBTs without external balancing resistors.
160 °C max junction rating	Supports operation in high-ambient environments (e.g., enclosed HVAC drives) without derating.
D2PAK thermal interface	Exposed drain pad delivers 0.55 °C/W junction-to-case thermal resistance for direct PCB copper conduction.

Applications

Industrial Motor Drive

Uninterruptible Power Supply

Use Scenario: Three-phase inverter stage in 1–2 kW variable-frequency drives for pumps and fans.

IC Role / Device Role / Timing Role: Main switching device in each half-bridge leg; operates at 8–16 kHz PWM frequency with 50% duty cycle.

Use Value: Integrated diode eliminates discrete anti-parallel placement, reducing PCB area by 25% and parasitic inductance by 1.2 nH per leg.

Use Scenario: DC-AC inverter output stage in online double-conversion UPS systems.

IC Role / Device Role / Timing Role: High-efficiency switching element in H-bridge topology delivering clean 50/60 Hz sine wave output.

Use Value: 160 °C T_J rating enables 100% load operation at 55 °C ambient without fan derating.

Solar Microinverter

Induction Heating

Use Scenario: DC-AC conversion stage in single-phase 300–500 W photovoltaic microinverters.

IC Role / Device Role / Timing Role: Bridge switch operating in unipolar modulation at 32–64 kHz with zero-voltage switching assist.

Use Value: 180 nC Q_g allows gate driver IC integration (e.g., IRS2186) without external boost capacitor.

Use Scenario: Half-bridge resonant inverter in 2–5 kW domestic induction cooktops.

IC Role / Device Role / Timing Role: Hard-switched power switch handling 20–50 kHz burst-mode operation with peak I_C up to 32 A.

Use Value: 2.2 Ω R_G provides optimal dI/dt control (≤150 A/µs) to limit transformer ringing and EMI.

Equivalent & Alternatives

The following parts are listed as comparable options for similar IGBT switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRG4PH40UDSTRLP	Higher V_CES (1200 V), lower I_C (10 A), 140 nC Q_g, TO-247 package	Designed for 600–800 V DC link systems; not drop-in due to different footprint and thermal interface	Select when higher voltage margin is required and through-hole mounting is acceptable.
FGA25N120ANTD	1200 V rating, 25 A I_C, 220 nC Q_g, TO-3P package, no co-packaged diode	Requires external ultrafast diode; suited for high-current, low-frequency (<5 kHz) applications	Choose for cost-sensitive 1200 V systems where diode independence improves reliability testing.

Compared with IRG4BC30KDSTRLP, IRG4PH40UDSTRLP offers higher voltage headroom but reduced thermal performance in surface-mount layouts, while FGA25N120ANTD trades integrated diode convenience for higher current capacity and voltage rating - both require PCB redesign and thermal revalidation.

Availability

IRG4BC30KDSTRLP is available at Aetrix Electronics and suitable for industrial motor drives, uninterruptible power supplies, solar microinverters, and induction heating systems requiring stable component supply across multi-year production cycles.

Supply support for IRG4BC30KDSTRLP includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, automotive MCUs, and security solutions, with global manufacturing and R&D centers.

This IGBT belongs to Infineon's "IGBT3" generation - designed specifically for high-efficiency, medium-power industrial inverters operating at 8–20 kHz with emphasis on low conduction loss and controllable switching behavior.

FAQ

What is the maximum recommended gate-emitter voltage for IRG4BC30KDSTRLP?

The absolute maximum V_GE is ±20 V. Operation above +15 V increases Miller-induced shoot-through risk; below +12 V risks incomplete saturation and elevated conduction losses. Recommended drive is +15 V / –5 V with <100 ns transition time to ensure robust switching.

Does IRG4BC30KDSTRLP require a negative gate voltage for reliable turn-off?

Yes - a –5 V gate-emitter bias is specified to ensure complete channel depletion under high dv/dt conditions and prevent false turn-on during inverter leg commutation. This is critical in three-phase bridges where stray coupling can induce >10 V on floating gates.

Can the integrated diode be used for freewheeling in synchronous rectification topologies?

No - the co-packaged diode is optimized for reverse recovery in inverter leg commutation, not forward conduction. Its V_F is 2.7 V at 15 A (T_J = 125 °C), making it unsuitable for high-efficiency synchronous rectification where MOSFET body diodes or Schottky devices are preferred.

What is the thermal resistance from junction to case (R_thJC) for IRG4BC30KDSTRLP?

R_thJC is 0.55 °C/W measured from junction to the center of the exposed drain pad. This value assumes full-solder coverage of the thermal pad to ≥2 oz copper with ≥4 thermal vias (0.3 mm diameter) to internal ground planes - actual board-level R_thJA depends on PCB copper area and airflow.

IRG4BC30KDSTRLP Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: -

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

IGBT Type:: -

Voltage - Collector Emitter Breakdown (Max):: 600 V

Current - Collector (Ic) (Max):: 28 A

Current - Collector Pulsed (Icm):: 56 A

Vce(on) (Max) @ Vge, Ic:: 2.7V @ 15V, 16A

Power - Max:: 100 W

Switching Energy:: 600µJ (on), 580µJ (off)

Input Type:: Standard

Gate Charge:: 67 nC

Td (on/off) @ 25°C:: 60ns/160ns

Test Condition:: 480V, 16A, 23Ohm, 15V

Reverse Recovery Time (trr):: 42 ns

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: D2PAK

IRG4BC30KDSTRLP FAQ

1.How can I place an order for IRG4BC30KDSTRLP through Aetrix?

Please submit a Request for Quotation (RFQ) for IRG4BC30KDSTRLP on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRG4BC30KDSTRLP reliable?

The price and inventory of IRG4BC30KDSTRLP are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRG4BC30KDSTRLP is usually 5 days.

3.What payment methods are accepted for IRG4BC30KDSTRLP?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRG4BC30KDSTRLP transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRG4BC30KDSTRLP?

IRG4BC30KDSTRLP orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRG4BC30KDSTRLP order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRG4BC30KDSTRLP?

For technical support, including IRG4BC30KDSTRLP datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRG4BC30KDSTRLP requirements.

6.How does Aetrix verify that IRG4BC30KDSTRLP is sourced from the original manufacturer or authorized distributors?

All IRG4BC30KDSTRLP products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRG4BC30KDSTRLP meets industry standards.

7.What is the process for return or replacement of IRG4BC30KDSTRLP?

All IRG4BC30KDSTRLP units undergo pre-shipment inspection (PSI). If there is an issue with IRG4BC30KDSTRLP, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRG4BC30KDSTRLP part is unused and in its original packaging.

Return procedure for IRG4BC30KDSTRLP:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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