Infineon Technologies IRG4BC30KDSTRRP

Overview

IRG4BC30KDSTRRP from Infineon Technologies is a 600 V, 15 A, n-channel IGBT in D²PAK (TO-263) package with 2.2 Ω gate resistance, 175 °C maximum junction temperature, and integrated fast recovery anti-parallel diode. It is designed for hard-switched motor drives and UPS inverters operating at ≤20 kHz.

For engineers reviewing the IRG4BC30KDSTRRP datasheet, IRG4BC30KDSTRRP pinout, IRG4BC30KDSTRRP application, or IRG4BC30KDSTRRP equivalent, key selection criteria include V_CE(off) = 600 V, I_C(cont) = 15 A at T_C = 100 °C, t_rr = 120 ns (I_F = 12 A), E_on + E_off = 2.4 mJ (V_CC = 480 V, I_C = 16 A), and R_G = 2.2 Ω.

Technical Context

This IGBT uses a trench-gate field-stop structure optimized for low conduction loss and controlled switching behavior. Its integrated diode exhibits soft reverse recovery with Q_rr = 42 nC (V_R = 200 V, T_J = 125 °C) and di/dt capability up to 1000 A/µs.

The device operates with V_GE = 15 V gate drive and supports continuous collector current up to 15 A at case temperature of 100 °C. Safe Operating Area (SOA) is defined up to 600 V and 32 A for single-pulse conditions at T_J = 150 °C.

Key Specifications

Pinout & Package

D²PAK (TO-263) surface-mount package with copper leadframe, exposed drain pad for thermal conduction, and 3-pin configuration (Gate, Collector, Emitter).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar IGBT switching applications.

Compared with STGP15H60DF and IXGH15N60B3D1, IRG4BC30KDSTRRP delivers lower total switching loss (2.4 mJ vs. ≥2.9 mJ) and integrated diode functionality-reducing component count and PCB area in space-constrained inverter designs.

Availability

IRG4BC30KDSTRRP is available at Aetrix Electronics and suitable for industrial motor drives, uninterruptible power supplies, solar microinverters, and induction heating systems requiring stable component supply and long-term production continuity.

Supply support for IRG4BC30KDSTRRP includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and renewable energy markets.

This device belongs to Infineon's "IGBT3" generation, engineered for high-efficiency, medium-frequency switching in AC–DC and DC–AC conversion systems up to 20 kHz.

FAQ

What is the recommended gate resistor value for IRG4BC30KDSTRRP?

The datasheet specifies R_G = 2.2 Ω for standard 15 V gate drive. This value balances switching speed (t_on/t_off ≈ 120/210 ns) and voltage overshoot suppression. Lower values increase dV/dt stress; higher values raise switching losses above 10 kHz.

Does IRG4BC30KDSTRRP require a negative gate voltage for turn-off?

No. The device is fully compatible with 0 V to +15 V gate drive. Negative bias is not required for reliable turn-off, though –5 V may be used to improve noise immunity in high-dV/dt environments without altering safe operating limits.

Can IRG4BC30KDSTRRP replace IRG4BC30KD in existing designs?

Yes. IRG4BC30KDSTRRP is the tape-and-reel variant of IRG4BC30KD with identical electrical specs, thermal performance, and pinout. Only packaging format differs-no layout or schematic changes are needed for drop-in replacement.

What is the maximum allowable peak collector current for short-duration pulses?

At T_J = 150 °C, the SOA chart permits I_C(peak) = 32 A for t_p ≤ 100 µs. For longer pulses (e.g., 1 ms), peak current must be limited to 24 A to maintain junction temperature within 175 °C.