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Home > Products > Discrete Semiconductor Products > Transistors > IGBTs > Single IGBTs

Infineon Technologies IRG4BC30K-S

Name: IRG4BC30K-S
Brand: Infineon Technologies
SKU: IRG4BC30K-S
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRG4BC30K-S

Manufacturer:: Infineon Technologies

Category:: Single IGBTs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IRG4BC30K-S.pdf

Description:: IGBT 600V 28A 100W D2PAK

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Product details

Overview

IRG4BC30K-S from Infineon Technologies (formerly International Rectifier) is a short-circuit-rated 600 V, 28 A (T_C = 25°C) n-channel D2PAK IGBT optimized for motor control inverters and UPS systems. It delivers V_CE(on) = 2.21 V @ 16 A/15 V, t_sc = 10 µs at 360 V, and E_off = 0.51 mJ, enabling robust 3-phase inverter stages in HVAC and industrial drives.

For engineers reviewing the IRG4BC30K-S datasheet, IRG4BC30K-S pinout, IRG4BC30K-S application, or IRG4BC30K-S equivalent, key selection criteria include short-circuit withstand time, gate charge (Q_g = 67 nC), thermal resistance (R_θJC = 1.2 °C/W), and clamped inductive load capability (I_LM = 58 A).

Technical Context

This IGBT employs a trench-gate field-stop structure with integrated freewheeling diode optimization, supporting high-efficiency hard-switched topologies up to 20 kHz. Its gate threshold voltage (V_GE(th) = 3.0–6.0 V) and negative temperature coefficient of V_CE(on) enable stable parallel operation under thermal stress.

Designed for 400–480 V DC bus applications, it features low C_ies = 920 pF and C_res = 27 pF at 30 V, minimizing Miller-induced turn-on risk. The 10 µs short-circuit rating is validated at V_CE(start) = 360 V, T_J = 125°C, and V_GE = 15 V with R_G = 23 Ω.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CES	600 V - Withstands 480 V DC bus with 25% margin for transient overvoltage in industrial inverters.
I_C @ T_C = 25°C	28 A - Supports continuous 1.5 kW motor drive output with standard heatsinking.
t_sc	10 µs - Enables hardware-level fault response without external desaturation detection in 3-phase bridge legs.
Q_g	67 nC (typ.) - Determines gate driver power requirement (~1 W @ 20 kHz, 15 V swing) and switching loss trade-off.
R_θJC	1.2 °C/W - Allows 58 W dissipation at 100°C case temperature before exceeding 150°C junction limit.
E_off	0.51 mJ @ 480 V - Sets minimum dead-time and snubber sizing for 16 A load current in hard-switched PFC or inverter stages.
V_CE(on)	2.21 V @ 16 A/15 V - Contributes ≤ 35 W conduction loss per device in 30 A RMS motor phase leg.

Pinout & Package

D2PAK (TO-263) surface-mount package with isolated tab; 3-pin configuration optimized for low-inductance PCB layout and direct heatsink mounting via screw (M3/6-32, 1.1 N·m torque).

Pin/Terminal	Circuit Role	Design Meaning
1 – Gate	Control input	Receives 15 V logic-level drive; requires <23 Ω series resistance to limit dV/dt-induced turn-on during switching.
2 – Drain	High-side switch node	Connected to DC+ bus; carries full load current and must be routed with minimal loop inductance to suppress voltage spikes.
3 – Source	Emitter return path	Serves as local ground reference for gate driver; shared with freewheeling diode cathode in half-bridge configuration.

Key Features

Feature	Design Value
Short-circuit rated	t_sc = 10 µs at 360 V, T_J = 125°C - Eliminates need for fast desaturation circuitry in cost-sensitive motor drives.
Low V_CE(on) + high speed	V_CE(on) = 2.21 V @ 16 A + E_ts = 0.87 mJ - Balances conduction and switching losses for 10–20 kHz PWM in HVAC compressors.
Tighter parameter distribution	±10% V_CE(on) and ±15% Q_g across lot - Enables reliable paralleling without current-sharing resistors in high-power modules.
Optimized for HEXFRED™ diodes	Matched recovery characteristics with IR's ultrafast soft-recovery diodes - Reduces EMI and diode reverse recovery loss by >40% vs. standard FRD.

Applications

Industrial Motor Drives

HVAC Inverter Compressors

Use Scenario: 3-phase 2–5 kW variable-frequency drives for pumps and conveyors operating at 400 V AC input.

IC Role / Device Role / Timing Role: Main switching device in inverter leg; handles 16 A RMS phase current with 10 µs fault clearance timing.

Use Value: Enables compact heatsink design due to R_θJC = 1.2 °C/W and eliminates external SC protection circuitry.

Use Scenario: Hermetic compressor inverters in residential and light-commercial air conditioners.

IC Role / Device Role / Timing Role: High-side switch in 20 kHz PWM inverter stage; operates at T_J = 125°C with 10 µs short-circuit tolerance.

Use Value: Reduces system size by 22% vs. previous-generation IGBTs while maintaining 15-year reliability under thermal cycling.

Uninterruptible Power Supplies

Induction Heating Half-Bridge

Use Scenario: Online double-conversion UPS with 480 V DC link and 5 kVA output capacity.

IC Role / Device Role / Timing Role: Inverter-stage IGBT; switches 28 A peak current with E_off = 0.51 mJ limiting snubber losses.

Use Value: Achieves >95.2% efficiency at full load by minimizing combined conduction (2.21 V) and switching (0.87 mJ) losses.

Use Scenario: 20–50 kW resonant induction heating systems using asymmetrical half-bridge topology.

IC Role / Device Role / Timing Role: Low-side switch handling 58 A pulsed collector current (I_CM) during resonant peaks.

Use Value: Supports 50 kHz operation with low C_res = 27 pF, reducing Miller feedback and enabling clean zero-voltage switching transitions.

Equivalent & Alternatives

The following parts are listed as comparable options for similar IGBT switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRG4PH40KD-EP	Higher V_CES = 1200 V, lower I_C = 20 A, t_sc = 10 µs unchanged	Targeted at 600–800 V DC bus industrial welders and traction inverters	Select when system DC link exceeds 600 V or higher avalanche energy (E_ARV = 420 mJ) is required.
FGA25N120ANTD	Same 600 V rating but higher I_C = 35 A, Q_g = 95 nC, no specified t_sc	Designed for high-current UPS and solar inverters requiring higher continuous current	Choose when conduction loss dominates and short-circuit protection is handled externally via controller.

Compared with IRG4BC30K-S, IRG4PH40KD-EP trades lower current for higher voltage ruggedness and avalanche margin, while FGA25N120ANTD offers higher current headroom at the cost of increased gate drive demand and no guaranteed short-circuit rating-making IRG4BC30K-S optimal for thermally constrained, fault-tolerant motor control.

Availability

IRG4BC30K-S is available at Aetrix Electronics and suitable for industrial motor drives, HVAC inverter compressors, and uninterruptible power supplies requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for IRG4BC30K-S includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, sensor, and automotive ICs, headquartered in Munich, Germany.

This device belongs to Infineon's legacy Short-Circuit Rated UltraFast IGBT product line, engineered specifically for high-reliability motor control inverters where fault tolerance and thermal stability are critical.

FAQ

What is the maximum gate-emitter voltage rating for IRG4BC30K-S?

The absolute maximum V_GE is ±20 V. Operation above ±15 V increases gate oxide stress and reduces long-term reliability; typical gate drive uses +15 V for turn-on and –5 V to –10 V for turn-off to ensure robust noise immunity and prevent spurious turn-on during high dV/dt events.

Can IRG4BC30K-S be paralleled without emitter resistors?

Yes-its negative temperature coefficient of V_CE(on) and tight parameter distribution (±10% V_CE(on), ±15% Q_g) enable stable current sharing across devices. However, matched gate drive impedance (<5% variation) and symmetrical PCB layout are mandatory to avoid dynamic imbalance during switching transients.

What thermal interface material is recommended for the D2PAK tab?

A silicone-based thermal grease with 0.5–1.0 W/m·K conductivity and 0.05–0.1 mm bond line thickness is recommended. Avoid non-curing pastes that pump out under thermal cycling; use conformal-coated heatsinks or insulating pads only if isolation voltage >2500 V_RMS is required.

Does IRG4BC30K-S include an integrated body diode?

No-it does not have a monolithically integrated body diode. External freewheeling diodes (e.g., IR's HEXFRED™ series) must be used in anti-parallel configuration. This architecture avoids reverse recovery losses inherent in IGBT-integrated diodes and enables optimized diode selection for specific EMI and efficiency targets.

IRG4BC30K-S Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: -

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tube

Product Status:: Obsolete

IGBT Type:: -

Voltage - Collector Emitter Breakdown (Max):: 600 V

Current - Collector (Ic) (Max):: 28 A

Current - Collector Pulsed (Icm):: 58 A

Vce(on) (Max) @ Vge, Ic:: 2.7V @ 15V, 16A

Power - Max:: 100 W

Switching Energy:: 360µJ (on), 510µJ (off)

Input Type:: Standard

Gate Charge:: 67 nC

Td (on/off) @ 25°C:: 26ns/130ns

Test Condition:: 480V, 16A, 23Ohm, 15V

Reverse Recovery Time (trr):: -

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: D2PAK

IRG4BC30K-S FAQ

1.How can I place an order for IRG4BC30K-S through Aetrix?

Please submit a Request for Quotation (RFQ) for IRG4BC30K-S on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRG4BC30K-S reliable?

The price and inventory of IRG4BC30K-S are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRG4BC30K-S is usually 5 days.

3.What payment methods are accepted for IRG4BC30K-S?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRG4BC30K-S transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRG4BC30K-S?

IRG4BC30K-S orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRG4BC30K-S order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRG4BC30K-S?

For technical support, including IRG4BC30K-S datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRG4BC30K-S requirements.

6.How does Aetrix verify that IRG4BC30K-S is sourced from the original manufacturer or authorized distributors?

All IRG4BC30K-S products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRG4BC30K-S meets industry standards.

7.What is the process for return or replacement of IRG4BC30K-S?

All IRG4BC30K-S units undergo pre-shipment inspection (PSI). If there is an issue with IRG4BC30K-S, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRG4BC30K-S part is unused and in its original packaging.

Return procedure for IRG4BC30K-S:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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