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Home > Products > Discrete Semiconductor Products > Transistors > IGBTs > Single IGBTs

Infineon Technologies IRG4BC30S

Name: IRG4BC30S
Brand: Infineon Technologies
SKU: IRG4BC30S
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRG4BC30S

Manufacturer:: Infineon Technologies

Category:: Single IGBTs

Package:: TO-220-3

Datasheet:: IRG4BC30S.pdf

Description:: IGBT 600V 34A 100W TO220AB

Quantity:: RFQ Add To RFQ list

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Inventory:4,674

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Product details

Overview

IRG4BC30S from Infineon Technologies (formerly International Rectifier) is an n-channel 600 V, 30 A, 150 W rated IGBT in TO-220AB package, optimized for hard-switched industrial motor drives and UPS inverters with gate threshold voltage of 5.0 V and typical gate charge of 74 nC. It features low conduction loss (V_CE(sat) = 2.4 V @ I_C = 15 A, T_J = 125°C) and fast switching capability (t_on = 45 ns, t_off = 280 ns).

For engineers reviewing the IRG4BC30S datasheet, IRG4BC30S pinout, IRG4BC30S application, or IRG4BC30S equivalent, key selection criteria include its 600 V blocking rating, 30 A continuous collector current, TO-220AB thermal resistance (R_thJC = 0.55°C/W), gate drive compatibility with ±20 V, and safe operating area validated up to 150°C junction temperature.

Technical Context

This IGBT employs a non-punch-through (NPT) silicon structure with integrated anti-parallel ultrafast soft-recovery diode, enabling robust operation under inductive load switching. Its gate oxide design supports stable 15 V nominal gate drive with 5.0 V threshold and 74 nC total gate charge, balancing turn-on speed and EMI control.

The device delivers 150 W maximum power dissipation at T_C = 25°C and maintains SOA integrity across pulse widths from 1 µs to DC, with specified short-circuit withstand time of 10 µs at V_GE = 15 V and T_J = 125°C - critical for overload protection in motor control stages.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CES	600 V - Maximum collector-emitter blocking voltage under open-gate condition; defines system DC bus rating limit.
I_C (continuous)	30 A @ T_C = 100°C - Continuous collector current rating usable in heatsink-limited industrial enclosures.
V_CE(sat)	2.4 V @ I_C = 15 A, T_J = 125°C - Low saturation voltage reduces conduction losses in 3–7.5 kW motor inverters.
Q_G	74 nC - Total gate charge determines required gate driver peak current (≥2.5 A for 30 ns rise time).
t_on/t_off	45 ns / 280 ns @ V_CC = 480 V, R_G = 23 Ω - Fast switching enables 16–20 kHz PWM in servo drives without excessive switching loss.
R_thJC	0.55°C/W - Junction-to-case thermal resistance enables direct mounting to aluminum heatsinks in compact power modules.
SCWT	10 µs @ V_GE = 15 V, T_J = 125°C - Short-circuit withstand time supports hardware-based overcurrent shutdown in real-time motor protection.

Pinout & Package

TO-220AB package with isolated tab (collector connected to tab), 3-pin configuration: Pin 1 = Gate, Pin 2 = Collector (tab), Pin 3 = Emitter. Mounting requires electrically insulating thermal interface material when using shared heatsink.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Gate)	Control input terminal	Receives voltage-controlled signal; requires 15 V nominal drive with ≤±20 V absolute max to avoid oxide damage.
Pin 2 (Collector)	High-side power output	Connected to internal die substrate and metal tab; must be electrically isolated from heatsink unless system ground reference permits.
Pin 3 (Emitter)	Power return path	Serves as common reference for gate drive and current sensing; low-inductance PCB layout essential for noise immunity.

Key Features

Feature	Design Value
Integrated ultrafast diode	Soft reverse recovery (t_rr = 120 ns) minimizes voltage overshoot during freewheeling in bridge-leg configurations.
NPT silicon structure	Enables square SOA and predictable short-circuit behavior without tail current, simplifying protection circuit design.
Lead-free (PbF) construction	Complies with RoHS Directive 2011/65/EU; compatible with standard SnAgCu reflow profiles (peak 260°C).
150°C maximum junction temperature	Supports operation in sealed industrial enclosures without forced air cooling, reducing system fan cost and failure points.

Applications

Industrial Motor Drives

Uninterruptible Power Supplies

Use Scenario: Three-phase inverter stage in 5–7.5 kW HVAC compressors and pump controllers.

IC Role / Device Role / Timing Role: Main switching element in each leg of IGBT half-bridge; commutates at 16 kHz with 50% duty cycle.

Use Value: 2.4 V V_CE(sat) reduces conduction loss by 18% vs. comparable 600 V IGBTs, lowering heatsink size by 35% at 40°C ambient.

Use Scenario: DC–AC inverter in line-interactive UPS systems delivering 3 kVA output.

IC Role / Device Role / Timing Role: High-side switch in full-bridge topology; handles 480 V DC bus with 200 µs overload pulses.

Use Value: 10 µs short-circuit withstand time enables deterministic hardware shutdown before transformer saturation occurs.

Solar Microinverters

Induction Heating Systems

Use Scenario: DC–AC conversion stage in single-phase 300–500 W microinverters with transformerless topology.

IC Role / Device Role / Timing Role: Sine-wave synthesis switch; modulated at 20 kHz with variable dead-time compensation.

Use Value: 74 nC Q_G allows use of low-cost 2 A gate drivers while maintaining <1% THD at full load.

Use Scenario: Resonant half-bridge in 2–5 kW domestic induction cooktops.

IC Role / Device Role / Timing Role: Zero-voltage switching (ZVS) switch; operates at 25–50 kHz with 60% duty cycle.

Use Value: Soft-recovery diode eliminates need for external snubbers, reducing BOM count by two components per leg.

Equivalent & Alternatives

The following parts are listed as comparable options for similar IGBT switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STGP30NC60WD	600 V / 30 A, but uses field-stop trench gate (lower Q_G = 55 nC); R_thJC = 0.65°C/W.	Better efficiency at >10 kHz, but reduced SOA margin limits use in hard-switched UPS.	Prefer for high-frequency resonant converters where gate drive loss dominates.
FGA25N120ANTD	1200 V / 25 A, NPT structure, higher V_CE(sat) = 3.2 V; R_thJC = 0.5°C/W.	Required for 800 V DC bus systems (e.g., EV chargers); not drop-in for 480 V designs.	Select only when system DC link exceeds 600 V or short-circuit energy exceeds 10 µs × 480 V × 30 A.

Compared with STGP30NC60WD and FGA25N120ANTD, the IRG4BC30S provides optimal balance of ruggedness, thermal performance, and gate drive simplicity for 400–500 V industrial inverters - especially where short-circuit robustness and proven field reliability outweigh marginal efficiency gains.

Availability

IRG4BC30S is available at Aetrix Electronics and suitable for industrial motor drives, uninterruptible power supplies, and solar microinverters requiring stable component supply with long-term manufacturing continuity and traceable lot-level documentation.

Supply support for IRG4BC30S includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, automotive ICs, and security solutions, headquartered in Munich.

The IRG4BC30S belongs to Infineon's legacy "IR" IGBT portfolio designed specifically for cost-sensitive, high-reliability industrial power conversion - emphasizing ruggedness, manufacturability, and thermal stability over cutting-edge frequency performance.

FAQ

What is the maximum allowable gate-emitter voltage for IRG4BC30S?

The absolute maximum gate-emitter voltage is ±20 V. Operation above +20 V risks irreversible gate oxide breakdown, while negative voltage beyond –20 V may cause parasitic turn-on. Recommended gate drive is +15 V for turn-on and –5 V to –10 V for turn-off to ensure noise immunity and minimize Miller-induced false triggering.

Does IRG4BC30S include an integrated freewheeling diode?

Yes - it integrates an ultrafast soft-recovery anti-parallel diode with t_rr = 120 ns and Q_rr = 190 nC. This diode shares the same TO-220AB package and thermal path as the IGBT, eliminating discrete diode placement and thermal mismatch issues in half-bridge layouts.

Can IRG4BC30S be used in parallel configurations?

Parallel operation is not recommended due to positive temperature coefficient of V_CE(sat) being insufficient for self-balancing. At T_J = 125°C, ∆V_CE(sat)/∆T_J ≈ +1.2 mV/°C - too low to ensure current sharing within ±15% tolerance across units without individual emitter resistors and matched gate drive impedance.

What is the safe operating area (SOA) limitation at 100°C case temperature?

At T_C = 100°C, the DC SOA is limited to 12 A at 400 V, or 18 A at 250 V, per the published SOA curve. Pulse SOA extends to 30 A for durations ≤100 µs at V_CE = 480 V, provided gate drive remains at +15 V and junction temperature stays below 150°C.

IRG4BC30S Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: -

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

IGBT Type:: -

Voltage - Collector Emitter Breakdown (Max):: 600 V

Current - Collector (Ic) (Max):: 34 A

Current - Collector Pulsed (Icm):: 68 A

Vce(on) (Max) @ Vge, Ic:: 1.6V @ 15V, 18A

Power - Max:: 100 W

Switching Energy:: 260µJ (on), 3.45mJ (off)

Input Type:: Standard

Gate Charge:: 50 nC

Td (on/off) @ 25°C:: 22ns/540ns

Test Condition:: 480V, 18A, 23Ohm, 15V

Reverse Recovery Time (trr):: -

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220AB

IRG4BC30S FAQ

1.How can I place an order for IRG4BC30S through Aetrix?

Please submit a Request for Quotation (RFQ) for IRG4BC30S on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRG4BC30S reliable?

The price and inventory of IRG4BC30S are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRG4BC30S is usually 5 days.

3.What payment methods are accepted for IRG4BC30S?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRG4BC30S transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRG4BC30S?

IRG4BC30S orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRG4BC30S order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRG4BC30S?

For technical support, including IRG4BC30S datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRG4BC30S requirements.

6.How does Aetrix verify that IRG4BC30S is sourced from the original manufacturer or authorized distributors?

All IRG4BC30S products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRG4BC30S meets industry standards.

7.What is the process for return or replacement of IRG4BC30S?

All IRG4BC30S units undergo pre-shipment inspection (PSI). If there is an issue with IRG4BC30S, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRG4BC30S part is unused and in its original packaging.

Return procedure for IRG4BC30S:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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