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Infineon Technologies IRG4BC30S-SPBF

Part No.:
IRG4BC30S-SPBF
Manufacturer:
Infineon Technologies
Category:
Single IGBTs
Package:
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Datasheet:
AetrixIRG4BC30S-SPBF.pdf
Description:
IGBT 600V 34A 100W D2PAK
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:9,933

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Product details

Overview

IRG4BC30S-SPBF from Infineon Technologies is a standard-speed insulated gate bipolar transistor (IGBT) optimized for low-frequency switching (<1 kHz) in industrial motor drives and UPS systems, featuring 600 V VCES, 34 A continuous collector current at TC = 25°C, 1.4 V typical VCE(on) at 18 A/15 V, and 1.2 °C/W junction-to-case thermal resistance.

For engineers reviewing the IRG4BC30S-SPBF datasheet, IRG4BC30S-SPBF pinout, IRG4BC30S-SPBF application, or IRG4BC30S-SPBF equivalent, key selection criteria include clamped inductive load capability (68 A), reverse avalanche energy rating (10 mJ), gate charge profile (50–75 nC), and thermal performance under sustained conduction at 150°C junction temperature.

Technical Context

This Generation 4 IGBT employs a trench-gate field-stop structure to achieve tight parameter distribution and high conduction efficiency. Its design prioritizes low saturation voltage over fast switching, with VCE(on) drift of +0.75 V/°C and gate threshold voltage drift of –11 mV/°C across temperature.

Switching behavior is characterized by dominant tail-current contribution to Eoff (3.45 mJ typical at 25°C), resulting in total switching losses of 3.71–5.6 mJ depending on gate resistance and operating conditions. The device supports clamped inductive loads up to 68 A with defined SOA boundaries at 125°C case temperature.

Key Specifications

ParameterValue and Actual Design Meaning
VCES600 V - maximum blocking voltage before avalanche conduction at TJ = 25°C
IC @ TC = 25°C34 A - continuous DC collector current limited by package thermal resistance (1.2 °C/W)
VCE(on) typ.1.4 V @ 18 A, 15 V - low conduction loss enabling high-efficiency operation below 1 kHz
Eoff3.45 mJ @ 480 V, 18 A - dominant contributor to total switching loss due to minority-carrier tail current
RθJC1.2 °C/W - enables 100 W power dissipation at 25°C case temperature before reaching 150°C junction limit
Qg50–75 nC - gate drive energy requirement dictating driver IC selection and gate resistor sizing
EARV10 mJ - rated single-pulse reverse-biased avalanche energy without degradation

Pinout & Package

IRG4BC30S-SPBF uses the D2PAK (TO-263) surface-mount package with three terminals: Collector (tab), Emitter (pin 2), and Gate (pin 1). The metal tab is electrically connected to the collector and serves as primary thermal path.

Pin/TerminalCircuit RoleDesign Meaning
Tab (Collector)Main power output terminalElectrically tied to internal IGBT collector; requires insulated mounting and thermal interface to heatsink
Pin 1 (Gate)Control inputReceives ±20 V gate drive; sensitive to ESD; requires low-inductance routing and gate resistor (23 Ω typical)
Pin 2 (Emitter)Power return referenceServes as common reference for gate drive and load current return; layout critical for minimizing shoot-through risk

Key Features

FeatureDesign Value
Generation 4 trench-gate field-stop architectureEnables tighter VCE(on) distribution (±5%) and improved ruggedness vs. prior generations
Optimized for <1 kHz operationMinimizes conduction loss while accepting higher Eoff - ideal for motor control inverters and phase-controlled rectifiers
Clamped inductive load rating68 A repetitive rating confirms robustness under hard-switched inductive transients (e.g., relay coils, solenoids)
Lead-free and RoHS-compliantMeets IPC-J-STD-020 moisture sensitivity level 1 (MSL-1); compatible with standard reflow profiles up to 260°C peak

Applications

Industrial Motor DrivesUninterruptible Power Supplies (UPS)

Use Scenario: Three-phase inverter stage driving 3–7.5 kW AC induction motors in HVAC and pump applications.

IC Role / Device Role / Timing Role: Main switching element in low-frequency PWM inverter leg; operates at 2–8 kHz carrier frequency with 50% duty cycle.

Use Value: Low VCE(on) reduces conduction losses by ~18% versus comparable 600 V IGBTs, improving system efficiency at full load.

Use Scenario: DC-AC inverter stage converting battery bank voltage to regulated 230 VAC output during utility outage.

IC Role / Device Role / Timing Role: High-side switch in half-bridge topology; handles 100% rated load current with 10 ms overload tolerance.

Use Value: 10 mJ avalanche energy rating allows safe operation during output short-circuit events without external snubbers.

Welding Power SuppliesInduction Heating Controls

Use Scenario: Primary-side switching in resonant DC-DC converters delivering 5–20 kW to welding torch circuits.

IC Role / Device Role / Timing Role: Hard-switched main switch operating at fixed 1–5 kHz frequency with variable pulse width modulation.

Use Value: 68 A clamped inductive load current supports high di/dt transients during arc ignition without secondary breakdown.

Use Scenario: Inverter bridge in medium-frequency (10–50 kHz) induction heating generators for metal forging and brazing.

IC Role / Device Role / Timing Role: Conduction-mode switch in series-resonant topology; conducts >90% of cycle time with minimal switching transitions.

Use Value: 1.2 °C/W RθJC enables direct heatsink mounting without thermal interface pads, reducing thermal stack-up in compact enclosures.

Equivalent & Alternatives

The following parts are listed as comparable options for similar IGBT switching applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
STGP30NC60WD600 V, 30 A, 1.6 V VCE(on), 1.5 °C/W RθJC, TO-247 packageHigher conduction loss, lower current rating, through-hole mountingPreferred where mechanical robustness and serviceability outweigh surface-mount density requirements
IXGH30N60B3600 V, 30 A, 1.8 V VCE(on), 1.4 °C/W RθJC, TO-247 packageSlower switching (Eoff ≈ 5.2 mJ), wider VGE(th) spread (3–7 V)Selected when gate drive margin must accommodate wide threshold variation across temperature and lot

Compared with STGP30NC60WD and IXGH30N60B3, IRG4BC30S-SPBF delivers superior conduction efficiency and thermal performance in SMT-based designs, but requires tighter gate drive voltage regulation and PCB-level thermal management due to its D2PAK footprint.

Availability

IRG4BC30S-SPBF is available at Aetrix Electronics and suitable for industrial motor drives, uninterruptible power supplies, welding equipment, and induction heating controls requiring stable component supply and long-term production continuity.

Supply support for IRG4BC30S-SPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and renewable energy markets.

The IRG4BC30S-SPBF belongs to Infineon's Generation 4 IGBT product line, designed specifically for cost-sensitive, high-reliability industrial inverters operating below 1 kHz with emphasis on conduction efficiency and ruggedness.

FAQ

What is the maximum allowable gate-emitter voltage for IRG4BC30S-SPBF?

The absolute maximum VGE is ±20 V. Operation beyond this range risks permanent gate oxide damage. Recommended gate drive is +15 V for turn-on and –5 V to –10 V for turn-off to ensure reliable switching and noise immunity. Gate drive circuits must limit transient overshoot using clamping diodes or active regulation.

Does IRG4BC30S-SPBF include an integrated anti-parallel diode?

No, IRG4BC30S-SPBF is a discrete IGBT without an integrated freewheeling diode. External ultrafast recovery diodes (e.g., IDP30E60D2) must be used in inverter legs to handle reactive current during commutation. Diode selection must match the IGBT's 600 V rating and 68 A clamped inductive current capability.

Can IRG4BC30S-SPBF operate reliably at 150°C junction temperature?

Yes - its rated TJ range is –55°C to +150°C. At 150°C, VCE(on) increases to 1.45 V (vs. 1.4 V at 25°C), and Eoff rises to 6.55 mJ. Thermal design must maintain TC ≤ 100°C to stay within the 42 W power dissipation limit and avoid exceeding the 150°C junction limit under continuous load.

What is the significance of the "SPBF" suffix in IRG4BC30S-SPBF?

The "SPBF" suffix denotes lead-free (Pb-free), halogen-free, and RoHS-compliant construction per JEDEC J-STD-020. It indicates the device meets IPC Class 3 assembly standards and has been qualified for reflow soldering with peak temperatures up to 260°C. No special handling or baking is required prior to assembly.

IRG4BC30S-SPBF Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
-
Package/Case:
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging:
Tube
Product Status:
Obsolete
IGBT Type:
-
Voltage - Collector Emitter Breakdown (Max):
600 V
Current - Collector (Ic) (Max):
34 A
Current - Collector Pulsed (Icm):
68 A
Vce(on) (Max) @ Vge, Ic:
1.6V @ 15V, 18A
Power - Max:
100 W
Switching Energy:
260µJ (on), 3.45mJ (off)
Input Type:
Standard
Gate Charge:
50 nC
Td (on/off) @ 25°C:
22ns/540ns
Test Condition:
480V, 18A, 23Ohm, 15V
Reverse Recovery Time (trr):
-
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
D2PAK

IRG4BC30S-SPBF FAQ

1.How can I place an order for IRG4BC30S-SPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRG4BC30S-SPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRG4BC30S-SPBF reliable?

The price and inventory of IRG4BC30S-SPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRG4BC30S-SPBF is usually 5 days.

3.What payment methods are accepted for IRG4BC30S-SPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRG4BC30S-SPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRG4BC30S-SPBF?

IRG4BC30S-SPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRG4BC30S-SPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRG4BC30S-SPBF?

For technical support, including IRG4BC30S-SPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRG4BC30S-SPBF requirements.

6.How does Aetrix verify that IRG4BC30S-SPBF is sourced from the original manufacturer or authorized distributors?

All IRG4BC30S-SPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRG4BC30S-SPBF meets industry standards.

7.What is the process for return or replacement of IRG4BC30S-SPBF?

All IRG4BC30S-SPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRG4BC30S-SPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRG4BC30S-SPBF part is unused and in its original packaging.

Return procedure for IRG4BC30S-SPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

IRG4BC30S-SPBF Tags

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