Infineon Technologies IRG4BH20K-SPBF
- Part No.:
- IRG4BH20K-SPBF
- Manufacturer:
- Infineon Technologies
- Category:
- Single IGBTs
- Package:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Datasheet:
-
IRG4BH20K-SPBF.pdf
- Description:
- IGBT 1200V 11A 60W D2PAK
- Quantity:
- Payment:

- Shipping:

Inventory:4,455
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Product details
Overview
IRG4BH20K-SPBF from Infineon (formerly International Rectifier) is a 1200 V, 11 A short-circuit-rated ultrafast IGBT in D2Pak (TO-263) package, optimized for motor control inverters with tsc = 10 µs at VCC = 720 V and TJ = 125 °C. It delivers VCE(on) = 3.17 V @ IC = 5.0 A, VGE = 15 V, and Eoff = 0.44 mJ, enabling high-efficiency 3-phase AC motor drives up to 5 kW.
For engineers reviewing the IRG4BH20K-SPBF datasheet, IRG4BH20K-SPBF pinout, IRG4BH20K-SPBF application, or IRG4BH20K-SPBF equivalent, key selection criteria include short-circuit withstand time, gate charge (Qg = 28 nC typ.), thermal resistance (RθJC = 2.1 °C/W), freewheeling diode pairing compatibility, and D2Pak footprint constraints in compact inverter designs.
Technical Context
This IGBT employs a trench-gate field-stop structure with optimized carrier lifetime control to balance conduction loss (VCE(on)) and switching speed (tf = 270 ns typ. @ TJ = 25 °C). Its gate threshold voltage (VGE(th) = 3.5–6.5 V) and negative temperature coefficient of VCE(on) support stable parallel operation in multi-device modules.
The device integrates internal emitter inductance (LE = 7.5 nH) and exhibits Cies = 435 pF, Coes = 44 pF, and Cres = 8.3 pF at VCE = 30 V, enabling predictable EMI behavior when paired with HEXFRED™ diodes and controlled gate drive (RG = 50 Ω).
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCES | 1200 V - supports 720 V DC bus systems with 1.67× safety margin against transients |
| IC @ TC = 100 °C | 5.0 A - defines continuous output current capability under industrial heatsink conditions |
| VCE(on) | 3.17 V @ IC = 5.0 A, VGE = 15 V - sets conduction loss of 15.85 W at rated current |
| tsc | 10 µs @ VCC = 720 V, TJ = 125 °C - enables robust fault handling without external desaturation protection |
| Qg | 28 nC typ. - determines gate driver peak current requirement (~560 mA @ 20 ns rise time) |
| RθJC | 2.1 °C/W - allows 28.6 °C junction rise above case at 60 W dissipation, critical for thermal design |
| Eoff | 0.44 mJ @ IC = 5.0 A, VCC = 960 V - quantifies turn-off energy loss during PWM switching |
Pinout & Package
IRG4BH20K-SPBF uses the industry-standard D2Pak (TO-263AB) thermally enhanced surface-mount package with isolated mounting tab. The three terminals are arranged in a single-row configuration compatible with IPC-7351B SO-2014 footprint.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Collector (C) | Main power output terminal | Connected to DC bus positive; carries full load current and must be routed with low-inductance copper pour |
| Gate (G) | Control input | High-impedance MOS-controlled terminal requiring <50 Ω series resistance to damp ringing and limit dV/dt-induced turn-on |
| Emitter (E) | Power return and reference node | Serves as common source for gate drive and current sensing; internal inductance (7.5 nH) affects shoot-through immunity |
Key Features
| Feature | Design Value |
|---|---|
| Short-circuit withstand time | 10 µs at 720 V, 125 °C - eliminates need for fast desat detection in 50/60 Hz motor control applications |
| Ultrafast switching | tf = 270 ns, Ets = 0.89 mJ - enables >20 kHz PWM frequency while maintaining <1.2 mJ total loss at 5 A |
| Tighter parameter distribution | VCE(on) min/max spread ≤ 1.2 V across production lot - improves current sharing in paralleled configurations |
| Lead-free construction | RoHS-compliant SnAgCu solder finish - meets IPC-J-STD-020D reflow profile requirements for Pb-free assembly |
Applications
| Industrial Motor Drives | UPS Inverters |
|---|---|
Use Scenario: 3-phase 400 VAC variable-frequency drive for HVAC compressors and pumps. IC Role / Device Role / Timing Role: Main switching device in 6-switch inverter leg; operates at 8–16 kHz PWM with 50% duty cycle symmetry. Use Value: 10 µs short-circuit rating allows safe stall-current handling during rotor lock without hardware shutdown. | Use Scenario: Online double-conversion UPS delivering clean 230 VAC output from 400 VDC battery bank. IC Role / Device Role / Timing Role: High-side switch in full-bridge inverter stage; synchronized with complementary low-side IGBTs. Use Value: Low Eoff (0.44 mJ) reduces thermal stress during frequent battery-to-grid transitions, extending system MTBF. |
| Solar Microinverters | Electric Vehicle Onboard Chargers |
Use Scenario: Single-phase grid-tied microinverter converting 30–60 VDC PV string output to 230 VAC. IC Role / Device Role / Timing Role: DC-link switching element in H-bridge topology; modulated using unipolar SPWM. Use Value: Tight VCE(on) distribution ensures consistent efficiency across production units, meeting Tier-1 OEM binning specs. | Use Scenario: Bidirectional AC/DC converter in 3.3 kW OBC charging 400 V battery packs from 230 VAC mains. IC Role / Device Role / Timing Role: Active rectifier switch in PFC boost stage; commutated at 50–100 kHz with zero-voltage switching assist. Use Value: 1200 V VCES accommodates 700 V transient surges during regenerative braking events without derating. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar IGBT switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRG4PH20UD-SPBF | Same VCES (1200 V), lower Qg (22 nC), higher VCE(on) (3.4 V typ.) | Better suited for higher-frequency (>30 kHz) resonant converters where gate loss dominates | Select when prioritizing switching speed over conduction loss in low-duty-cycle topologies |
| FGA25N120ANTD | Higher IC (25 A), larger TO-247 package, RθJC = 0.65 °C/W | Targeted at higher-power (10–15 kW) industrial drives requiring forced-air cooling | Choose for scalable designs needing headroom beyond 5 kW or improved thermal margin |
Compared with IRG4PH20UD-SPBF, IRG4BH20K-SPBF trades 6 nC higher gate charge for 0.23 V lower saturation voltage-favoring medium-frequency motor drives where conduction loss dominates. Versus FGA25N120ANTD, it offers smaller footprint and lower cost at the expense of thermal headroom and current rating.
Availability
IRG4BH20K-SPBF is available at Aetrix Electronics and suitable for industrial motor drives, UPS inverters, solar microinverters, and electric vehicle onboard chargers requiring stable component supply and long-term lifecycle support.
Supply support for IRG4BH20K-SPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and renewable energy markets.
This IGBT belongs to Infineon's "UltraFast" generation designed specifically for high-efficiency, short-circuit-robust motor control inverters operating at 8–20 kHz with minimal external protection circuitry.
FAQ
What is the maximum recommended gate resistor value for reliable turn-off?
A 50 Ω gate resistor is specified in the datasheet for standard switching characterization (tf, Eoff). Increasing RG beyond 68 Ω extends turn-off time and increases Eoff nonlinearly-exceeding 100 Ω risks incomplete turn-off under high dV/dt conditions. For motor control, 33–47 Ω balances loss and noise immunity.
Can IRG4BH20K-SPBF be paralleled without active current balancing?
Yes-its negative temperature coefficient of VCE(on) and tight parameter distribution (±5% VCE(on) spread) enable stable current sharing across up to four devices with matched gate drive and symmetrical PCB layout. Thermal coupling via shared heatsink is required to maintain junction temperature uniformity.
Which HEXFRED™ diode is recommended as a companion freewheeling device?
The datasheet explicitly recommends the UF4007 (600 V, 1 A) or UFT3007 (600 V, 3 A) HEXFRED™ diodes for clamped inductive loads. Their ultra-soft recovery (Qrr < 25 nC, trr < 75 ns) minimizes voltage overshoot and EMI when commutating with this IGBT's 270 ns fall time.
Does the D2Pak package require thermal vias under the tab for standard operation?
Yes-the 2.1 °C/W RθJC rating assumes a minimum 1"² copper pad on the PCB with ≥6 thermal vias (0.3 mm diameter, filled) connecting to an internal ground plane. Without vias, RθJA degrades to 40 °C/W, limiting continuous power to <15 W at ambient 50 °C.
IRG4BH20K-SPBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Packaging:
- Tube
- Product Status:
- Obsolete
- IGBT Type:
- -
- Voltage - Collector Emitter Breakdown (Max):
- 1200 V
- Current - Collector (Ic) (Max):
- 11 A
- Current - Collector Pulsed (Icm):
- 22 A
- Vce(on) (Max) @ Vge, Ic:
- 4.3V @ 15V, 5A
- Power - Max:
- 60 W
- Switching Energy:
- 450µJ (on), 440µJ (off)
- Input Type:
- Standard
- Gate Charge:
- 28 nC
- Td (on/off) @ 25°C:
- 23ns/93ns
- Test Condition:
- 960V, 5A, 50Ohm, 15V
- Reverse Recovery Time (trr):
- -
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- D2PAK
IRG4BH20K-SPBF FAQ
1.How can I place an order for IRG4BH20K-SPBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRG4BH20K-SPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRG4BH20K-SPBF reliable?
The price and inventory of IRG4BH20K-SPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRG4BH20K-SPBF is usually 5 days.
3.What payment methods are accepted for IRG4BH20K-SPBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRG4BH20K-SPBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRG4BH20K-SPBF?
IRG4BH20K-SPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRG4BH20K-SPBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRG4BH20K-SPBF?
For technical support, including IRG4BH20K-SPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRG4BH20K-SPBF requirements.
6.How does Aetrix verify that IRG4BH20K-SPBF is sourced from the original manufacturer or authorized distributors?
All IRG4BH20K-SPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRG4BH20K-SPBF meets industry standards.
7.What is the process for return or replacement of IRG4BH20K-SPBF?
All IRG4BH20K-SPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRG4BH20K-SPBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRG4BH20K-SPBF part is unused and in its original packaging.
Return procedure for IRG4BH20K-SPBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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