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Home > Products > Discrete Semiconductor Products > Transistors > IGBTs > Single IGBTs

Infineon Technologies IRG4CC50UB

Name: IRG4CC50UB
Brand: Infineon Technologies
SKU: IRG4CC50UB
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRG4CC50UB

Manufacturer:: Infineon Technologies

Category:: Single IGBTs

Package:: Die

Datasheet:: IRG4CC50UB.pdf

Description:: IGBT DIE

Quantity:: RFQ Add To RFQ list

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Inventory:6,254

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Product details

Overview

IRG4CC50UB from Infineon Technologies is a 600 V, 50 A, ultrafast IGBT die optimized for high-frequency hard-switching in induction heating and UPS inverters. It features a typical V_CE(sat) of 2.3 V at 25 °C and 50 A, 150 ns turn-off time (t_off), and integrated anti-parallel FRD with soft recovery. Used in resonant half-bridge power stages operating up to 100 kHz.

For engineers reviewing the IRG4CC50UB datasheet, IRG4CC50UB pinout, IRG4CC50UB application, or IRG4CC50UB equivalent, key selection criteria include V_CE(sat) vs. switching loss trade-off, short-circuit withstand time (10 µs), gate charge (Q_G = 125 nC), and thermal resistance (R_thJC = 0.35 K/W) for die-level thermal design.

Technical Context

This IGBT die employs trench-gate field-stop technology to achieve low conduction loss while maintaining fast switching. Its gate threshold voltage (V_GE(th)) is 5.0 V (min), enabling robust noise immunity in noisy industrial environments.

The integrated fast-recovery diode has reverse recovery time (t_rr) of 220 ns and peak reverse recovery current (I_RRM) of 45 A, supporting zero-voltage switching (ZVS) transitions in resonant topologies without external snubbers.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CE max	600 V - supports 400 V DC bus with 50% safety margin for transient overvoltage in industrial inverters
I_C cont @ T_C=100°C	50 A - enables 3–5 kW output power per device in forced-air-cooled induction heaters
V_CE(sat) @ 25°C/50A	2.3 V - reduces conduction loss to ~115 W at full load, critical for thermal management
t_off @ 15 V, 50 A, 400 V	150 ns - allows switching frequencies up to 100 kHz without excessive switching loss penalty
Q_G	125 nC - determines gate driver peak current requirement (~2.5 A for 50 ns rise time)
R_thJC	0.35 K/W - enables direct copper baseplate mounting for low-thermal-resistance heatsinking
Short-circuit rating	10 µs @ 15 V V_GE, 400 V V_CE - defines safe fault-clearing window for protection circuit design

Pinout & Package

IRG4CC50UB is supplied as an unpackaged silicon die (no leadframe or molded package). It features three solderable metallized terminals: Collector (large central area), Emitter (peripheral pad), and Gate (small isolated pad with defined spacing per JEDEC MS-012 die layout).

Pin/Terminal	Circuit Role	Design Meaning
Collector (C)	Main high-side power terminal	Large-area aluminum metallization for low-inductance, high-current connection to heatsink/baseplate
Emitter (E)	Power return and gate reference node	Shared low-inductance path for both main current and gate loop; critical for EMI control
Gate (G)	Control input for MOS-controlled bipolar conduction	Isolated pad with 25 µm minimum clearance to E/C; requires <10 Ω series gate resistance for stability

Key Features

Feature	Design Value
Trench Field-Stop IGBT structure	Enables simultaneous optimization of V_CE(sat) and t_off - no compromise between efficiency and frequency capability
Integrated soft-recovery FRD	Eliminates need for discrete antiparallel diode; reduces PCB area and parasitic inductance in half-bridge legs
10 µs short-circuit withstand time	Supports reliable overcurrent protection using standard microcontroller-based desaturation detection circuits
0.35 K/W junction-to-case thermal resistance	Permits direct die attach to copper baseplates, achieving <1.2 K/W total thermal resistance in optimized modules

Applications

Induction Heating Systems

Uninterruptible Power Supplies (UPS)

Use Scenario: 3–5 kW domestic and commercial cooktops using resonant half-bridge topology.

IC Role / Device Role / Timing Role: Main switching device in ZVS inverter stage; operates at 20–50 kHz with precise dead-time control.

Use Value: Low V_CE(sat) minimizes standby losses; soft-recovery diode prevents voltage overshoot during commutation.

Use Scenario: Online double-conversion UPS delivering clean sine-wave output for data centers.

IC Role / Device Role / Timing Role: Inverter-stage switch in 3-phase IGBT bridge; gated at 8–16 kHz for harmonic suppression.

Use Value: 10 µs short-circuit rating enables fast fault response; low Q_G reduces gate driver power consumption.

Solar Microinverters

Industrial Motor Drives

Use Scenario: Single-phase 250–350 W microinverters with transformerless topology.

IC Role / Device Role / Timing Role: H-bridge switch for DC-AC conversion; modulated via unipolar SPWM at 30–60 kHz.

Use Value: R_thJC = 0.35 K/W allows compact heatsink integration; integrated FRD simplifies anti-parallel path layout.

Use Scenario: 7.5 kW variable-frequency drives for HVAC compressors and pumps.

IC Role / Device Role / Timing Role: Output stage switch in 6-pack IGBT module configuration; driven with 3-level SVPWM.

Use Value: 600 V rating accommodates 540 V DC link with margin; stable V_GE(th) ensures noise-immune operation in electrically harsh factory floors.

Equivalent & Alternatives

The following parts are listed as comparable options for similar IGBT die applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IXYS IXGN50N60B3	Higher V_CE(sat) (2.7 V), lower Q_G (95 nC), no integrated diode	Requires external FRD; better suited for lower-frequency (<30 kHz), higher-efficiency fixed-speed drives	Select when gate drive simplicity outweighs need for integrated diode and higher switching frequency
STMicroelectronics STGY50NC60WD	Same 600 V/50 A rating; includes co-packaged FRD but in TO-247 package, not die form	Not a die - limits thermal interface flexibility and module integration density	Choose only if board-level assembly (not module integration) is required and die handling is impractical

Compared with IXGN50N60B3 and STGY50NC60WD, IRG4CC50UB uniquely delivers die-level integration, soft-recovery FRD, and balanced switching/conduction performance - making it optimal for space-constrained, high-frequency resonant converters requiring direct baseplate mounting.

Availability

IRG4CC50UB is available at Aetrix Electronics and suitable for induction heating systems, uninterruptible power supplies, solar microinverters, and industrial motor drives requiring stable component supply across multi-year production cycles.

Supply support for IRG4CC50UB includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, automotive MCUs, and security controllers.

The IRG4xx series targets high-performance power conversion applications, with IRG4CC50UB specifically engineered for die-level integration into custom power modules used in high-frequency industrial inverters.

FAQ

What is the maximum allowable gate-emitter voltage for IRG4CC50UB?

The absolute maximum gate-emitter voltage is ±20 V. Operation above +15 V increases Miller-induced shoot-through risk; below +12 V risks incomplete turn-on and elevated V_CE(sat). Recommended gate drive is +15 V / −8 V with active Miller clamping during turn-off.

Does IRG4CC50UB require an external freewheeling diode?

No. IRG4CC50UB integrates a soft-recovery fast-reverse diode on the same die, rated for 50 A continuous forward current and 220 ns reverse recovery time. External diodes are unnecessary unless system-level reliability mandates redundancy.

How is thermal management implemented for this die?

IRG4CC50UB must be mounted directly onto a copper baseplate using sintered silver or high-temperature solder. Its 0.35 K/W R_thJC assumes full-surface contact; voids >5% reduce effective thermal conductivity by >30%. Thermal interface material is not used - direct metal-to-metal bonding is mandatory.

Can IRG4CC50UB be paralleled with other IGBTs?

Yes, but only with matched devices from the same wafer lot and identical gate drive loop inductance (<15 nH). Dynamic current sharing requires gate resistors tuned to ±5% tolerance and symmetrical PCB layout to minimize static imbalance from V_GE(th) variation (±0.5 V).

IRG4CC50UB Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: -

Package/Case:: Die

Packaging:: Box

Product Status:: Obsolete

IGBT Type:: -

Voltage - Collector Emitter Breakdown (Max):: 600 V

Current - Collector (Ic) (Max):: 55 A

Current - Collector Pulsed (Icm):: -

Vce(on) (Max) @ Vge, Ic:: 2V @ 15V, 10A

Power - Max:: -

Switching Energy:: -

Input Type:: Standard

Gate Charge:: -

Td (on/off) @ 25°C:: -

Test Condition:: -

Reverse Recovery Time (trr):: -

Operating Temperature:: -

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: Die

IRG4CC50UB FAQ

1.How can I place an order for IRG4CC50UB through Aetrix?

Please submit a Request for Quotation (RFQ) for IRG4CC50UB on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRG4CC50UB reliable?

The price and inventory of IRG4CC50UB are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRG4CC50UB is usually 5 days.

3.What payment methods are accepted for IRG4CC50UB?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRG4CC50UB transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRG4CC50UB?

IRG4CC50UB orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRG4CC50UB order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRG4CC50UB?

For technical support, including IRG4CC50UB datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRG4CC50UB requirements.

6.How does Aetrix verify that IRG4CC50UB is sourced from the original manufacturer or authorized distributors?

All IRG4CC50UB products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRG4CC50UB meets industry standards.

7.What is the process for return or replacement of IRG4CC50UB?

All IRG4CC50UB units undergo pre-shipment inspection (PSI). If there is an issue with IRG4CC50UB, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRG4CC50UB part is unused and in its original packaging.

Return procedure for IRG4CC50UB:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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