Infineon Technologies IRG4CC50WB

Overview

IRG4CC50WB from Infineon Technologies (formerly International Rectifier) is an IGBT die in bare wafer form, designed for high-current switching in industrial inverters and UPS systems. It features a 600 V collector-emitter breakdown voltage, ≤2.3 V saturation voltage at 10 A/25°C, and Cr-NiV-Ag backmetal with 4 µm Al-Si front metallization on a 150 mm diameter wafer.

For engineers reviewing the IRG4CC50WB datasheet, IRG4CC50WB pinout, IRG4CC50WB application, or IRG4CC50WB equivalent, key selection factors include its wafer-level mechanical specifications (0.257" × 0.260" die size, 100 µm street width), guaranteed V_CE(on) and V_(BR)CES, thermal interface requirements, and die-attach temperature limit of 300°C.

Technical Context

This IGBT die implements a trench-gate field-stop structure optimized for 600 V operation in high-power motor drives and welding equipment. Its electrical behavior is defined under wafer-form test conditions: V_GE(th) between 3.0–6.0 V, I_CES ≤250 µA at 600 V, and gate leakage ±1.1 µA at ±20 V.

The die uses standard IRG4PC50W package outline reference for layout compatibility, with mechanical data aligned to drawing 01-5226. Front-side metallization is 99% Al–1% Si (4 µm thick); backmetal is Cr–NiV–Ag stack for high-current bonding (1–2.5 kA rating).

Key Specifications

Pinout & Package

IRG4CC50WB is supplied as an unpackaged IGBT die on a 150 mm wafer; it has no molded package or leadframe. Terminal identification follows standard IGBT die orientation: Emitter (E), Collector (C), and Gate (G) are located on the front side, with metallized pads sized per drawing 01-5226. Backside serves as collector contact via Cr-NiV-Ag backmetal.

Key Features

Applications

Availability

IRG4CC50WB is available at Aetrix Electronics and suitable for industrial motor inverters, uninterruptible power supplies, induction heating systems, and welding power supplies requiring stable component supply and wafer-level sourcing flexibility.

Supply support for IRG4CC50WB includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power electronics, sensor systems, and automotive microcontrollers, headquartered in Munich, Germany.

The IRG4C series IGBT dies were developed for high-reliability, wafer-level integration into custom power modules and hybrid substrates targeting 600 V industrial switching applications.

FAQ

Is IRG4CC50WB supplied as individual die or only on wafer?

IRG4CC50WB is supplied exclusively as bare die on a 150 mm wafer with standard <100> flat. Individual die singulation, backgrinding, or frame mounting is not performed by the manufacturer and must be handled by the customer's assembly process.

What is the maximum allowable die-attach temperature for IRG4CC50WB?

The recommended maximum die-attach temperature is 300°C, as specified in the mechanical data sheet. Exceeding this temperature risks degradation of the Al–Si front metallization and interfacial adhesion, potentially causing bond lift or increased V_CE(on).

Does IRG4CC50WB have integrated anti-parallel diode?

No. IRG4CC50WB is a single N-channel IGBT die without an integrated freewheeling diode. External diode placement or co-packaging with a separate ultrafast diode die is required for bidirectional current handling in bridge topologies.

Can IRG4CC50WB be used interchangeably with IRG4PC50W?

No - IRG4CC50WB is a wafer-form die, while IRG4PC50W is a TO-247 packaged device. They share the same die design and electrical specs, but mechanical implementation, thermal path, and assembly requirements differ fundamentally. Layout and thermal design must be re-validated for die-level integration.