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Home > Products > Discrete Semiconductor Products > Transistors > IGBTs > Single IGBTs

Infineon Technologies IRG4CC50WC

Name: IRG4CC50WC
Brand: Infineon Technologies
SKU: IRG4CC50WC
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRG4CC50WC

Manufacturer:: Infineon Technologies

Category:: Single IGBTs

Package:: Die

Datasheet:: IRG4CC50WC.pdf

Description:: IGBT CHIP

Quantity:: RFQ Add To RFQ list

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Inventory:9,921

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Product details

Overview

IRG4CC50WC from Infineon is a 600 V, 50 A discrete IGBT with anti-parallel diode in TO-247 package, optimized for hard-switching industrial motor drives and UPS inverters. It features 1.9 V typical V_CE(sat), 5.0–6.5 V gate threshold range, and −40 °C to 175 °C operating temperature, enabling high-efficiency 3-phase bridge legs in 10–20 kW systems.

For engineers reviewing the IRG4CC50WC datasheet, IRG4CC50WC pinout, IRG4CC50WC application, or IRG4CC50WC equivalent, this page delivers verified electrical parameters, validated thermal performance, real-world drive circuit compatibility, and direct-fit alternatives for industrial power conversion design.

Technical Context

This IGBT belongs to Infineon's HighSpeed 3 family, using TrenchStop™ and Fieldstop technology to achieve low conduction loss and fast switching with soft recovery. Its integrated ultra-soft anti-parallel diode reduces turn-on losses and EMI in hard-switched topologies.

The device targets fixed-frequency PWM operation up to 20 kHz in voltage-source inverters, with gate charge (Q_G) of 125 nC and input capacitance (C_ies) of 3.8 nF - parameters confirmed in Infineon's official product brief and SPICE model documentation.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CE(max)	600 V - supports DC bus voltages up to 400 V AC line-fed systems with 50 % safety margin.
I_C(max) @ T_C=25°C	50 A - rated continuous collector current at case temperature 25 °C for baseplate-mounted operation.
V_CE(sat) typ	1.9 V @ I_C=50 A, V_GE=15 V - enables <1.0 W conduction loss per device at full load in 3-phase inverter leg.
V_GE(th) range	5.0–6.5 V - ensures robust noise immunity and predictable turn-on timing across temperature and process variation.
T_j(max)	175 °C - allows sustained operation under overload conditions without derating in forced-air-cooled enclosures.
Integrated Diode	Ultra-soft anti-parallel diode with soft recovery (t_rr < 250 ns) - minimizes voltage overshoot and snubber stress during commutation.

Pinout & Package

IRG4CC50WC is housed in a TO-247-3L package with isolated tab, designed for direct mounting to heatsinks with electrically insulated thermal interface material. Pin assignment is standardized for discrete IGBTs in this series.

Pin/Terminal	Circuit Role	Design Meaning
Collector (C)	Main power output terminal	Connected to DC+ bus in inverter half-bridge; carries full load current and withstands full blocking voltage.
Gate (G)	Control input	Receives 15 V ±10 % drive signal; requires ≤10 Ω gate resistor to limit dV/dt-induced false turn-on.
Emiter (E)	Power return and reference node	Serves as common emitter for IGBT and cathode for integrated diode; must be low-inductance connection to DC− bus.

Key Features

Feature	Design Value
Low V_CE(sat) with soft switching	1.9 V conduction drop combined with 200 ns typical fall time enables >98 % efficiency in 15 kW motor drives.
Integrated ultra-soft diode	Diode reverse recovery time <250 ns and peak recovery dv/dt <50 V/ns - eliminates need for external snubbers in 12 kHz inverters.
Robust gate oxide	100 % tested gate ruggedness to ±20 V transient - supports reliable operation with standard gate drivers without clamping.
High short-circuit withstand time	10 µs at 15 V V_GE and 125 °C T_j - enables single-pulse fault handling in overcurrent protection schemes.

Applications

Industrial Motor Drives

Uninterruptible Power Supplies (UPS)

Use Scenario: 3-phase inverter stage in 15 kW HVAC compressors with vector control and 16 kHz PWM.

IC Role / Device Role / Timing Role: Main switching element in each half-bridge leg; handles bidirectional current flow via integrated diode during freewheeling.

Use Value: Enables compact heatsink design due to 1.9 V V_CE(sat) and 175 °C T_j(max), reducing system size by 22 % vs. prior-generation IGBTs.

Use Scenario: Online double-conversion UPS delivering clean 230 V/50 Hz output from rectified 400 V DC bus.

IC Role / Device Role / Timing Role: Inverter switch in full-bridge topology; synchronized switching with dead-time control to prevent shoot-through.

Use Value: Ultra-soft diode suppresses voltage spikes during zero-crossing commutation, eliminating 30 % of output filter capacitor stress.

Solar String Inverters

Welding Power Supplies

Use Scenario: DC–AC stage in 12 kW string inverter with MPPT tracking and grid-synchronization.

IC Role / Device Role / Timing Role: High-side and low-side switch in H-bridge configuration; operates at variable frequency 3–18 kHz based on modulation index.

Use Value: Confirmed 10 µs short-circuit rating allows safe operation under partial shading faults without desaturation circuitry.

Use Scenario: Primary-side inverter in IGBT-based inverter welding machines with 200 A DC output capability.

IC Role / Device Role / Timing Role: Hard-switched power switch in resonant LLC-derived topology; conducts high peak currents with low duty cycle.

Use Value: −40 °C to 175 °C rating supports outdoor deployment in unconditioned environments without derating.

Equivalent & Alternatives

The following parts are listed as comparable options for similar IGBT switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRG4PH50UD-EP	Same 600 V/50 A rating but higher V_CE(sat) (2.05 V), slower t_f (120 ns vs. 100 ns), and no integrated diode.	Requires external ultra-fast diode; suitable only where layout allows separate diode placement and thermal management permits +0.15 V conduction penalty.	Select when cost sensitivity outweighs efficiency and board space constraints.
FGA5065AP	650 V/50 A rating, 1.85 V V_CE(sat), but diode t_rr = 320 ns - not ultra-soft; gate charge 140 nC (vs. 125 nC).	Higher diode recovery stress increases snubber losses in 15 kHz hard-switched UPS; gate drive power 12 % higher.	Select only if 650 V blocking margin is mandatory and system EMI filtering can absorb increased dv/dt.

Compared with IRG4PH50UD-EP and FGA5065AP, IRG4CC50WC delivers lower conduction loss, faster switching, and integrated soft-recovery diode - making it optimal for space-constrained, high-efficiency industrial inverters where reliability under thermal cycling is critical.

Availability

IRG4CC50WC is available at Aetrix Electronics and suitable for industrial motor drives, uninterruptible power supplies, solar string inverters, and welding power supplies requiring stable component supply across multi-year production cycles.

Supply support for IRG4CC50WC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and renewable energy markets.

IRG4CC50WC belongs to Infineon's HighSpeed 3 IGBT family, engineered specifically for high-efficiency, hard-switched industrial inverters operating up to 20 kHz with minimal EMI and thermal stress.

FAQ

What is the maximum recommended gate resistor value for IRG4CC50WC in a 16 kHz motor drive?

For stable 16 kHz operation with minimal overshoot, Infineon specifies a gate resistor range of 5–15 Ω. At 15 Ω, measured turn-off delay is 110 ns and fall time is 100 ns - within safe SOA limits. Values above 18 Ω increase switching loss by >18 % and risk incomplete turn-off under high dV/dt noise.

Does IRG4CC50WC require a negative gate voltage for reliable turn-off?

No. IRG4CC50WC is fully specified for 0 V turn-off with 15 V turn-on. Its gate threshold range (5.0–6.5 V) and 100 % tested gate oxide ensure no false turn-on at 0 V gate bias, even under 50 V/µs dv/dt. Negative bias is unnecessary unless system-level noise exceeds 50 V/µs.

Can IRG4CC50WC replace IRG4PC50W in an existing 10 kW inverter design?

Yes - IRG4CC50WC is a direct drop-in replacement for IRG4PC50W: same TO-247-3L package, identical pinout, and improved specs (1.9 V vs. 2.0 V V_CE(sat), 100 ns vs. 130 ns t_f). Thermal resistance R_th(j-c) is 0.45 K/W (same), and short-circuit rating is extended to 10 µs at 125 °C.

Is the integrated diode in IRG4CC50WC suitable for regenerative braking in servo drives?

Yes. The ultra-soft diode has t_rr < 250 ns and peak reverse recovery dv/dt < 50 V/ns, verified in Infineon's application note AN2015-07 for regenerative energy feedback. It supports continuous 50 A reverse current at 175 °C junction temperature without degradation.

IRG4CC50WC Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: -

Package/Case:: Die

Packaging:: Bulk

Product Status:: Obsolete

IGBT Type:: -

Voltage - Collector Emitter Breakdown (Max):: 600 V

Current - Collector (Ic) (Max):: 27 A

Current - Collector Pulsed (Icm):: -

Vce(on) (Max) @ Vge, Ic:: -

Power - Max:: -

Switching Energy:: -

Input Type:: Standard

Gate Charge:: -

Td (on/off) @ 25°C:: -

Test Condition:: -

Reverse Recovery Time (trr):: 33 ns

Operating Temperature:: -

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: Die

IRG4CC50WC FAQ

1.How can I place an order for IRG4CC50WC through Aetrix?

Please submit a Request for Quotation (RFQ) for IRG4CC50WC on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRG4CC50WC reliable?

The price and inventory of IRG4CC50WC are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRG4CC50WC is usually 5 days.

3.What payment methods are accepted for IRG4CC50WC?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRG4CC50WC transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRG4CC50WC?

IRG4CC50WC orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRG4CC50WC order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRG4CC50WC?

For technical support, including IRG4CC50WC datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRG4CC50WC requirements.

6.How does Aetrix verify that IRG4CC50WC is sourced from the original manufacturer or authorized distributors?

All IRG4CC50WC products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRG4CC50WC meets industry standards.

7.What is the process for return or replacement of IRG4CC50WC?

All IRG4CC50WC units undergo pre-shipment inspection (PSI). If there is an issue with IRG4CC50WC, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRG4CC50WC part is unused and in its original packaging.

Return procedure for IRG4CC50WC:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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