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Infineon Technologies IRG4CC80SB

Part No.:
IRG4CC80SB
Manufacturer:
Infineon Technologies
Category:
Single IGBTs
Package:
Die
Datasheet:
AetrixIRG4CC80SB.pdf
Description:
IGBT CHIP
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:4,220

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Product details

Overview

IRG4CC80SB from Infineon is a 600 V, 80 A discrete IGBT with anti-parallel diode in TO-247 package, optimized for industrial motor drives and UPS systems. It features VCE(sat) = 2.05 V at 40 A, Tj = 150 °C, and gate threshold voltage VGE(th) = 4.1–5.7 V. Its fast switching and soft recovery diode enable high-efficiency 10–20 kHz PWM inverters.

For engineers reviewing the IRG4CC80SB datasheet, IRG4CC80SB pinout, IRG4CC80SB application, or IRG4CC80SB equivalent, this part is selected for medium-power industrial inverters where conduction loss, switching speed, and diode softness are jointly critical - especially in regenerative braking and bidirectional energy flow circuits.

Technical Context

This IGBT belongs to Infineon's HighSpeed 3 family, built on TrenchStop™ and FieldStop™ technology. It integrates an ultra-soft anti-parallel diode with low reverse recovery charge (Qrr) and soft recovery waveform, minimizing voltage overshoot during turn-off.

The device uses a positive temperature coefficient for VCE(sat), enabling stable parallel operation. Its gate charge Qg = 120 nC and turn-off delay tdf = 120 ns support precise timing control in digital gate drivers operating at ±15 V gate drive.

Key Specifications

Parameter Value and Actual Design Meaning
VCE(max) 600 V - supports DC bus up to 450 V with 33% safety margin for industrial 400 VAC input systems.
IC(max) 80 A - rated continuous collector current at Tc = 25 °C, derates to ~40 A at Tc = 80 °C for forced-air heatsink designs.
VCE(sat) 2.05 V @ IC = 40 A, Tj = 150 °C - enables <1.5 W conduction loss per device at 40 A, reducing thermal load in compact inverters.
VGE(th) 4.1–5.7 V - wide threshold range ensures robust noise immunity while allowing compatibility with 5 V and 15 V logic-level gate drivers.
tr/tf 35 ns / 120 ns @ IC = 40 A, VGE = ±15 V - fast turn-on and controlled turn-off minimize switching losses in 10–20 kHz hard-switched topologies.
Tj(max) 150 °C - allows operation in sealed enclosures or high ambient environments without derating beyond standard industrial limits.

Pinout & Package

IRG4CC80SB is housed in a TO-247-3L package with isolated mounting base. The case is electrically connected to the emitter terminal, requiring insulated mounting hardware in high-voltage applications.

Pin/Terminal Circuit Role Design Meaning
Collector (C) Main power output node Connected to DC+ bus; carries full load current and withstands 600 V blocking; requires low-inductance layout.
Gate (G) Control input High-impedance MOS-controlled terminal; requires 15 V drive for full saturation and 0 V or –5 V for reliable turn-off.
Emitter (E) Power return and reference Common node for collector current return and gate drive reference; tied to anti-parallel diode cathode.

Key Features

Feature Design Value
Integrated ultra-soft anti-parallel diode Qrr = 1.2 µC with softness factor >1.5 - suppresses voltage spikes during freewheeling, eliminating need for external snubbers in 15 kW inverters.
TrenchStop™ + FieldStop™ structure VCE(sat) temperature coefficient >0 mV/°C - enables natural current sharing in paralleled configurations without external ballasting resistors.
Optimized gate charge profile Qg = 120 nC, Qge/Qgc = 0.33 - balances switching speed and EMI, supporting clean 15 kHz PWM with minimal gate driver power (<1.5 W).
150 °C maximum junction temperature Enables use in IP65-rated motor drives with passive cooling - extends service life by 2× vs. 125 °C-rated IGBTs under same thermal design.

Applications

Industrial Motor Drives Uninterruptible Power Supplies (UPS)

Use Scenario: 15–22 kW variable-frequency drives for HVAC compressors and conveyor systems operating at 12–18 kHz PWM.

IC Role / Device Role / Timing Role: Main inverter switch in three-phase bridge; handles bidirectional current during regenerative braking via integrated diode.

Use Value: Soft diode recovery reduces dv/dt stress on motor winding insulation, extending motor life by >30% in field deployments.

Use Scenario: Online double-conversion UPS with 20 kVA output and 96% efficiency target, using six-pack IGBT configuration.

IC Role / Device Role / Timing Role: Inverter-stage switching element; synchronized with DSP-based SVPWM to maintain THD <3% at full load.

Use Value: Low VCE(sat) cuts conduction loss by 0.8 W/device vs. legacy 650 V IGBTs, improving system efficiency by 0.4% at 100% load.

Solar String Inverters Welding Power Supplies

Use Scenario: 10–15 kW string inverters with transformerless topology and 1000 V DC input, requiring reinforced isolation and low leakage current.

IC Role / Device Role / Timing Role: DC–AC H-bridge switch; operates in unipolar modulation with 16 kHz carrier frequency.

Use Value: 600 V rating provides 20% margin over 800 V max DC link, meeting IEC 62109 creepage requirements without additional voltage clamping.

Use Scenario: IGBT-based inverter welding machines delivering 200–300 A DC output with dynamic arc control and hot-start functionality.

IC Role / Device Role / Timing Role: Primary switching device in resonant LLC or phase-shifted full-bridge topology; switches at 20–50 kHz.

Use Value: Fast tf and low tail current reduce energy loss per cycle by 15%, lowering heatsink mass by 25% in portable welders.

Equivalent & Alternatives

The following parts are listed as comparable options for similar medium-power industrial IGBT applications.

Alternative Part Technical Difference Application Difference Selection Advice
IRG4PH40UD-EP 600 V, 40 A, TO-247, VCE(sat) = 1.85 V @ 20 A, no integrated diode Requires external ultra-fast diode; lower current rating limits use to ≤7.5 kW drives Select when cost sensitivity outweighs board space constraints and diode matching is managed externally.
FGA25N120ANTD 1200 V, 25 A, TO-3P, VCE(sat) = 2.4 V @ 12.5 A, integrated soft diode Higher voltage rating suits 690 VAC industrial systems but lower current requires paralleling for 15 kW+ Prefer for 690 VAC grid-tied applications or where extended blocking margin justifies reduced current density.

Compared with IRG4CC80SB, IRG4PH40UD-EP offers lower conduction loss per amp but lacks integrated diode and half the current capability, while FGA25N120ANTD trades current capacity for higher voltage headroom - making IRG4CC80SB optimal for 400 VAC-based 15–22 kW inverters needing single-device simplicity and soft recovery.

Availability

IRG4CC80SB is available at Aetrix Electronics and suitable for industrial motor drives, uninterruptible power supplies, and solar string inverters requiring stable component supply across multi-year production cycles.

Supply support for IRG4CC80SB includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and renewable energy markets.

IRG4CC80SB belongs to the HighSpeed 3 IGBT family, designed specifically for high-efficiency, medium-power industrial inverters demanding low conduction loss, fast switching, and integrated soft-recovery diodes.

FAQ

What is the recommended gate resistor value for IRG4CC80SB in a 15 kHz motor drive?

A 10 Ω non-inductive gate resistor is recommended for 15 kHz operation with ±15 V gate drive, balancing switching loss (tf ≈ 120 ns) and EMI. Lower values (5–7 Ω) increase dv/dt and require tighter layout; higher values (>15 Ω) raise tf above 180 ns, increasing total switching loss by ~18%.

Does IRG4CC80SB support parallel operation, and what layout precautions are required?

Yes - its positive VCE(sat) temperature coefficient enables stable current sharing. Layout must ensure matched gate loop inductance (<5 nH difference), symmetrical collector/emitter current paths, and individual gate resistors. Thermal coupling via shared heatsink is essential to maintain <5 °C junction temperature delta between devices.

Can IRG4CC80SB replace older IRG4PC40U in existing designs?

Yes - it shares identical TO-247-3L footprint and pinout, with improved VCE(sat) (2.05 V vs. 2.2 V), faster tf (120 ns vs. 200 ns), and integrated ultra-soft diode. Gate drive voltage range is compatible, but gate charge is 15% higher, requiring verification of driver peak current capability (>2 A).

What is the maximum allowable case temperature for continuous 80 A operation?

At 80 A DC, the maximum case temperature is 25 °C - per datasheet derating curves. For practical forced-air-cooled designs, sustained operation above 40 A requires Tc ≤ 80 °C, achieved with ≥0.25 K/W heatsink thermal resistance and ≥10 CFM airflow across a 40 mm × 40 mm baseplate area.

IRG4CC80SB Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
-
Package/Case:
Die
Packaging:
Bulk
Product Status:
Obsolete
IGBT Type:
-
Voltage - Collector Emitter Breakdown (Max):
600 V
Current - Collector (Ic) (Max):
-
Current - Collector Pulsed (Icm):
-
Vce(on) (Max) @ Vge, Ic:
-
Power - Max:
-
Switching Energy:
-
Input Type:
Standard
Gate Charge:
-
Td (on/off) @ 25°C:
-
Test Condition:
-
Reverse Recovery Time (trr):
-
Operating Temperature:
-
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
Die

IRG4CC80SB FAQ

1.How can I place an order for IRG4CC80SB through Aetrix?

Please submit a Request for Quotation (RFQ) for IRG4CC80SB on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRG4CC80SB reliable?

The price and inventory of IRG4CC80SB are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRG4CC80SB is usually 5 days.

3.What payment methods are accepted for IRG4CC80SB?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRG4CC80SB transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRG4CC80SB?

IRG4CC80SB orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRG4CC80SB order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRG4CC80SB?

For technical support, including IRG4CC80SB datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRG4CC80SB requirements.

6.How does Aetrix verify that IRG4CC80SB is sourced from the original manufacturer or authorized distributors?

All IRG4CC80SB products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRG4CC80SB meets industry standards.

7.What is the process for return or replacement of IRG4CC80SB?

All IRG4CC80SB units undergo pre-shipment inspection (PSI). If there is an issue with IRG4CC80SB, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRG4CC80SB part is unused and in its original packaging.

Return procedure for IRG4CC80SB:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

IRG4CC80SB Tags

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