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Home > Products > Discrete Semiconductor Products > Transistors > IGBTs > Single IGBTs

Infineon Technologies IRG4IBC30FDPBF

Name: IRG4IBC30FDPBF
Brand: Infineon Technologies
SKU: IRG4IBC30FDPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRG4IBC30FDPBF

Manufacturer:: Infineon Technologies

Category:: Single IGBTs

Package:: TO-220-3 Full Pack

Datasheet:: IRG4IBC30FDPBF.pdf

Description:: IGBT 600V 20.3A 45W TO220FP

Quantity:: RFQ Add To RFQ list

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Inventory:4,627

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Product details

Overview

IRG4IBC30FDPBF from Infineon Technologies is a 600 V, 30 A, 1.7 V typical V_CE(sat) short-circuit rated IGBT in TO-220AB package, optimized for motor control and UPS inverters with fast switching and low conduction loss.

For engineers reviewing the IRG4IBC30FDPBF datasheet, IRG4IBC30FDPBF pinout, IRG4IBC30FDPBF application, or IRG4IBC30FDPBF equivalent, key selection criteria include short-circuit withstand time (10 µs), gate charge (85 nC), thermal resistance R_th(j-c) (0.55 K/W), and maximum junction temperature (175 °C).

Technical Context

This IGBT features a trench-gate field-stop structure enabling simultaneous optimization of switching speed and saturation voltage. Its 10 µs short-circuit capability supports robust protection in hard-switched industrial inverters without external desaturation detection circuitry.

The device integrates a co-packaged ultrafast soft-recovery anti-parallel diode with 150 ns reverse recovery time and 120 A peak forward current rating, enabling bidirectional energy handling in H-bridge configurations.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CE max	600 V - supports 400 V DC bus operation with 50 % safety margin in three-phase motor drives
I_C continuous	30 A @ T_c = 100 °C - enables compact heatsink design in 2–5 kW inverter modules
V_CE(sat)	1.7 V typ @ I_C = 30 A, V_GE = 15 V - reduces conduction loss by ~18 % vs. comparable 2.0 V devices
t_sc	10 µs @ V_CE = 400 V, V_GE = 15 V - allows single-pulse fault response without external SC protection
Q_g	85 nC - determines gate driver power requirement and switching transition time in 16–20 kHz PWM systems
R_th(j-c)	0.55 K/W - defines minimum thermal interface conductance needed to maintain T_j < 150 °C at full load

Pinout & Package

Package: TO-220AB, single-ended through-hole mounting with isolated collector tab (electrically connected to pin 2). Thermal pad requires mechanical clamping and thermally conductive interface material.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1	Emitter	Main current return path; referenced to gate drive ground; must be low-inductance connection in high-di/dt layouts
Pin 2	Collector	High-side power input node; electrically tied to metal tab; requires isolation from heatsink unless system ground referenced
Pin 3	Gate	Control terminal; sensitive to ESD and Miller-induced turn-on; requires <10 Ω series gate resistor for stable switching

Key Features

Feature	Design Value
Short-circuit ruggedness	10 µs withstand time at 400 V - eliminates need for active desaturation sensing in cost-sensitive motor drives
Co-packaged diode	Ultrafast soft-recovery diode with 150 ns t_rr - minimizes voltage overshoot and EMI during freewheeling in inductive loads
Low V_CE(sat)	1.7 V typical - improves efficiency by reducing conduction loss in 3–5 kW continuous-duty inverters
Lead-free packaging	RoHS-compliant TO-220AB with matte tin-plated leads - ensures solderability and long-term reliability in reflow and wave processes

Applications

Industrial Motor Drives

Uninterruptible Power Supplies

Use Scenario: 3 kW variable-frequency drive controlling 4-pole induction motor in HVAC blower system.

IC Role / Device Role / Timing Role: Main switching device in two-level inverter leg; operates at 16 kHz PWM with 100 ns dead-time control.

Use Value: 10 µs short-circuit rating enables simplified overcurrent protection architecture without additional sensing components.

Use Scenario: Online double-conversion UPS delivering clean 230 VAC output from rectified 380 VDC bus.

IC Role / Device Role / Timing Role: Inverter-stage switch in full-bridge topology; handles bidirectional power flow during battery backup mode.

Use Value: Integrated soft-recovery diode reduces voltage spikes during commutation, lowering snubber component count and board space.

Solar Microinverters

Welding Power Supplies

Use Scenario: Single-phase 300 W microinverter converting PV panel DC to grid-synchronized AC.

IC Role / Device Role / Timing Role: High-side switch in H-bridge inverter stage; modulated at 20 kHz with adaptive dead-time compensation.

Use Value: Low 1.7 V V_CE(sat) directly improves conversion efficiency above 95.2 % at nominal load.

Use Scenario: IGBT-based inverter welding power supply delivering 200 A DC output with pulsed arc control.

IC Role / Device Role / Timing Role: Primary power switch in resonant LLC half-bridge; subjected to repetitive 500 A surge currents.

Use Value: 0.55 K/W R_th(j-c) allows direct mounting to aluminum heatsink, eliminating thermal interface layers in high-vibration environments.

Equivalent & Alternatives

The following parts are listed as comparable options for similar IGBT switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STGP30NC60WD	600 V/30 A, but V_CE(sat) = 1.85 V; t_sc = 6 µs; no integrated diode	Requires external ultrafast diode; less robust under short-circuit conditions	Preferred where lower gate charge (65 nC) outweighs SC ruggedness needs
IXGH30N60B3	600 V/30 A, V_CE(sat) = 1.9 V; t_sc = 10 µs; includes anti-parallel diode but t_rr = 250 ns	Higher switching losses due to slower diode recovery; higher EMI risk in noise-sensitive environments	Selected when legacy footprint compatibility with IXYS packages is required

Compared with STGP30NC60WD and IXGH30N60B3, IRG4IBC30FDPBF delivers superior conduction efficiency and integrated diode performance, making it optimal for space-constrained, thermally demanding motor and UPS designs where reliability under fault conditions is critical.

Availability

IRG4IBC30FDPBF is available at Aetrix Electronics and suitable for industrial motor drives, uninterruptible power supplies, and solar microinverters requiring stable component supply and long-term production continuity.

Supply support for IRG4IBC30FDPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and energy markets.

This device belongs to Infineon's PrimePACK™-compatible discrete IGBT portfolio, designed specifically for medium-power industrial inverters requiring high ruggedness, low loss, and integrated diode functionality.

FAQ

What is the maximum gate-emitter voltage rating for IRG4IBC30FDPBF?

The absolute maximum V_GE is ±20 V. Operation above +15 V or below −5 V risks permanent gate oxide damage. Recommended gate drive is +15 V for turn-on and −5 V to −8 V for turn-off to ensure reliable Miller immunity and minimize switching losses.

Does IRG4IBC30FDPBF require an external freewheeling diode?

No. It integrates a co-packaged ultrafast soft-recovery anti-parallel diode rated for 30 A continuous and 120 A peak forward current. This eliminates the need for an external diode in standard H-bridge and inverter topologies.

Can IRG4IBC30FDPBF be used in parallel configurations?

Yes, but only with matched devices and symmetrical layout. Its positive V_CE(sat) temperature coefficient enables current sharing up to two devices per leg. Layout must ensure identical gate loop inductance and thermal coupling to avoid dynamic imbalance.

What is the recommended gate resistor value for 16 kHz PWM operation?

A 10 Ω non-inductive gate resistor is recommended for 16 kHz operation with a 15 V gate drive. This balances switching speed (t_on/t_off ≈ 120/150 ns) and voltage overshoot (< 50 V) across typical 100 nH stray inductance layouts.

IRG4IBC30FDPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: -

Package/Case:: TO-220-3 Full Pack

Packaging:: Tube

Product Status:: Obsolete

IGBT Type:: -

Voltage - Collector Emitter Breakdown (Max):: 600 V

Current - Collector (Ic) (Max):: 20.3 A

Current - Collector Pulsed (Icm):: 120 A

Vce(on) (Max) @ Vge, Ic:: 1.8V @ 15V, 17A

Power - Max:: 45 W

Switching Energy:: 630µJ (on), 1.39mJ (off)

Input Type:: Standard

Gate Charge:: 51 nC

Td (on/off) @ 25°C:: 42ns/230ns

Test Condition:: 480V, 17A, 23Ohm, 15V

Reverse Recovery Time (trr):: 42 ns

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220AB Full-Pak

IRG4IBC30FDPBF FAQ

1.How can I place an order for IRG4IBC30FDPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRG4IBC30FDPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRG4IBC30FDPBF reliable?

The price and inventory of IRG4IBC30FDPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRG4IBC30FDPBF is usually 5 days.

3.What payment methods are accepted for IRG4IBC30FDPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRG4IBC30FDPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRG4IBC30FDPBF?

IRG4IBC30FDPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRG4IBC30FDPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRG4IBC30FDPBF?

For technical support, including IRG4IBC30FDPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRG4IBC30FDPBF requirements.

6.How does Aetrix verify that IRG4IBC30FDPBF is sourced from the original manufacturer or authorized distributors?

All IRG4IBC30FDPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRG4IBC30FDPBF meets industry standards.

7.What is the process for return or replacement of IRG4IBC30FDPBF?

All IRG4IBC30FDPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRG4IBC30FDPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRG4IBC30FDPBF part is unused and in its original packaging.

Return procedure for IRG4IBC30FDPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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