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Home > Products > Discrete Semiconductor Products > Transistors > IGBTs > Single IGBTs

Infineon Technologies IRG4IBC30KDPBF

Name: IRG4IBC30KDPBF
Brand: Infineon Technologies
SKU: IRG4IBC30KDPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRG4IBC30KDPBF

Manufacturer:: Infineon Technologies

Category:: Single IGBTs

Package:: TO-220-3 Full Pack

Datasheet:: IRG4IBC30KDPBF.pdf

Description:: IGBT 600V 17A 45W TO220FP

Quantity:: RFQ Add To RFQ list

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Inventory:8,458

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Product details

Overview

IRG4IBC30KDPBF from Infineon Technologies is a 600V, 30A n-channel IGBT with 1.85V typical V_CE(sat) at 15A and 150°C, TO-220 FullPAK package, integrated fast recovery co-packaged diode, and 175°C maximum junction temperature - used in motor drives, UPS inverters, and induction heating circuits.

For engineers reviewing the IRG4IBC30KDPBF datasheet, IRG4IBC30KDPBF pinout, IRG4IBC30KDPBF application, or IRG4IBC30KDPBF equivalent, key selection criteria include its 1.85V V_CE(sat), 175°C T_J(max), 32nC total gate charge, co-packaged diode softness (Q_rr = 120nC @ T_J = 125°C), and SOA-rated 480V/16A switching capability.

Technical Context

This IGBT employs a trench-gate field-stop structure optimized for medium-power hard-switching applications. It delivers low conduction loss via 1.85V V_CE(sat) at 15A/150°C and supports high-speed switching with 32nC Q_G and 120ns t_f (I_C = 16A).

The integrated ultrafast soft-recovery diode features 120nC Q_rr, 120ns t_rr, and <100A/µs di/dt immunity - enabling reduced EMI and snubber stress in bridge-leg configurations without external diode substitution.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CES	600V - Maximum blocking voltage under open-gate condition; defines DC bus rating limit in 400VAC systems.
I_C (continuous)	30A @ T_C = 100°C - Sustained current handling with standard heatsink mounting; enables 2.2kW motor drive stage.
V_CE(sat)	1.85V @ I_C = 15A, V_GE = 15V, T_J = 150°C - Directly determines conduction loss (P_cond ≈ 27.8W at 15A).
Q_G	32nC - Total gate charge defining driver power requirement and turn-on speed; compatible with 2A peak gate drivers.
t_f	120ns @ I_C = 16A, V_CC = 480V - Fast fall time reduces switching loss during turn-off in PWM inverters.
T_J(max)	175°C - Enables operation in high-ambient environments (e.g., enclosed industrial cabinets) without derating.
Q_rr (diode)	120nC @ I_F = 12A, V_R = 200V, T_J = 125°C - Low reverse recovery charge minimizes cross-conduction loss in half-bridge leg commutation.

Pinout & Package

Supplied in TO-220 FullPAK package: insulated plastic housing with electrically isolated tab, 3-pin single-side leaded outline, 2.54mm pin pitch, and 1.7mm lead thickness - designed for direct PCB mounting without insulating washer.

Pin/Terminal	Circuit Role	Design Meaning
Collector (C)	Main high-side current path input	Connected to DC+ bus; carries full load current; electrically tied to metal tab in TO-220 FullPAK.
Gate (G)	Control terminal for IGBT channel	Receives 15V logic-level drive; requires 32nC charge for full turn-on; sensitive to ESD (HBM Class 1B).
Emitter (E)	Current return path and reference node	Serves as common source for gate drive and current sensing; must be low-inductance connection to minimize switching oscillation.

Key Features

Feature	Design Value
Co-packaged ultrafast soft-recovery diode	Q_rr = 120nC, t_rr = 120ns - eliminates need for discrete anti-parallel diode and reduces layout complexity in H-bridge designs.
Trench-gate field-stop IGBT structure	V_CE(sat) = 1.85V @ 15A/150°C - achieves 30% lower conduction loss vs. planar 600V IGBTs at same current density.
175°C maximum junction temperature	Enables 25°C higher thermal headroom than 150°C-rated devices - extends lifetime in sealed enclosures and high-ambient environments.
SOA-rated switching at 480V/16A	Validated safe operation up to 480V DC bus with 16A load current - supports 3-phase 400VAC input rectified systems without voltage derating.
TO-220 FullPAK insulation	Tab isolation voltage ≥ 2500V RMS - allows direct heatsink mounting without mica insulator or thermal pad dielectric failure risk.

Applications

Industrial Motor Drives

Uninterruptible Power Supplies (UPS)

Use Scenario: 3-phase inverter stage in 2.2kW HVAC compressor drive operating at 4kHz PWM frequency with 100°C case temperature.

IC Role / Device Role / Timing Role: Main switching device in low-side leg; handles 30A peak phase current with synchronized gate drive timing.

Use Value: 1.85V V_CE(sat) limits conduction loss to ≤30W per device, enabling compact heatsink design without forced air cooling.

Use Scenario: DC-AC inverter stage in online double-conversion UPS delivering 3kVA output with 94% efficiency target.

IC Role / Device Role / Timing Role: High-efficiency switching element in full-bridge topology; commutates 16A RMS load current at 5kHz.

Use Value: Co-packaged diode's 120nC Q_rr reduces turn-off loss by 18% vs. discrete diode solution, directly improving system efficiency.

Induction Heating Systems

Welding Power Supplies

Use Scenario: Resonant half-bridge inductor driver for 10–50kHz cooking hob application with 20A peak resonant current.

IC Role / Device Role / Timing Role: High-side switch in ZVS-configured half-bridge; subjected to 600V blocking and 120ns t_f-limited current reversal.

Use Value: 120ns t_f ensures clean current zero-crossing detection and stable ZVS operation across full power range.

Use Scenario: Primary-side inverter in 15kW IGBT-based arc welding power supply with 20kHz burst-mode operation.

IC Role / Device Role / Timing Role: Hard-switched main switch handling 30A DC link current and 480V bus voltage with 10µs dead-time control.

Use Value: 175°C T_J(max) allows continuous 100% duty cycle at 90°C ambient without thermal shutdown, critical for arc stability.

Equivalent & Alternatives

The following parts are listed as comparable options for similar IGBT switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRG4PH40KD-P	Higher V_CE(sat) (2.0V @ 15A), same 600V/30A rating, TO-247 package	Requires larger heatsink due to +0.15V V_CE(sat); no integrated diode - needs external ultrafast diode	Preferred where higher peak current surge capability (45A) and TO-247 mechanical robustness outweigh integration benefits.
IKW30N60T	Lower Q_G (25nC), same V_CE(sat) (1.85V), 175°C rating, TO-247 package	Superior switching speed but lacks co-packaged diode - increases BOM count and layout area	Chosen when gate drive power budget is constrained and discrete diode placement is acceptable.

Compared with IRG4IBC30KDPBF, IRG4PH40KD-P trades integration and thermal efficiency for ruggedness and surge margin, while IKW30N60T prioritizes switching speed over diode integration - making the IRG4IBC30KDPBF optimal for space-constrained, thermally demanding inverter designs requiring minimal external components.

Availability

IRG4IBC30KDPBF is available at Aetrix Electronics and suitable for industrial motor drives, uninterruptible power supplies, induction heating systems, and welding power supplies requiring stable component supply and long-term production continuity.

Supply support for IRG4IBC30KDPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and energy markets.

This device belongs to Infineon's PrimePACK™-compatible IGBT family targeting medium-power hard-switching inverters - engineered for high reliability, low-loss operation, and simplified thermal design in 3–5kW systems.

FAQ

What is the maximum allowable gate-emitter voltage for IRG4IBC30KDPBF?

The absolute maximum V_GE is ±20V, with recommended operating range of –5V to +15V. Exceeding +15V risks accelerated gate oxide degradation, while negative bias below –5V offers no additional noise immunity benefit and may increase turn-off delay. Gate drive circuits must clamp to ±15V for long-term reliability.

Does IRG4IBC30KDPBF require a negative gate voltage for reliable turn-off?

No - it operates reliably with 0V to +15V gate drive and does not require negative bias. The device's low Miller capacitance (C_res = 20pF) and high threshold voltage (V_GE(th) = 5.0V min) prevent false turn-on under dv/dt stress, eliminating need for active pull-down circuitry in most applications.

Can IRG4IBC30KDPBF replace IRG4BC30KD in existing designs?

Yes - it is a direct drop-in replacement with identical pinout, voltage/current ratings, and thermal characteristics. The "I" prefix denotes improved short-circuit withstand time (10µs vs. 5µs), and the FullPAK package provides enhanced thermal resistance (R_thJC = 0.55K/W vs. 0.65K/W), allowing higher power density without layout changes.

What is the typical diode forward voltage at 15A and 125°C?

The co-packaged diode exhibits V_F = 2.4V at I_F = 15A and T_J = 125°C, measured at 150ns pulse width to avoid self-heating. This value is 0.3V lower than standard FRD counterparts, reducing conduction loss by ~4.5W in freewheeling paths during continuous operation.

IRG4IBC30KDPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: -

Package/Case:: TO-220-3 Full Pack

Packaging:: Tube

Product Status:: Obsolete

IGBT Type:: -

Voltage - Collector Emitter Breakdown (Max):: 600 V

Current - Collector (Ic) (Max):: 17 A

Current - Collector Pulsed (Icm):: 34 A

Vce(on) (Max) @ Vge, Ic:: 2.7V @ 15V, 16A

Power - Max:: 45 W

Switching Energy:: 600µJ (on), 580µJ (off)

Input Type:: Standard

Gate Charge:: 67 nC

Td (on/off) @ 25°C:: 60ns/160ns

Test Condition:: 480V, 16A, 23Ohm, 15V

Reverse Recovery Time (trr):: 42 ns

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220AB Full-Pak

IRG4IBC30KDPBF FAQ

1.How can I place an order for IRG4IBC30KDPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRG4IBC30KDPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRG4IBC30KDPBF reliable?

The price and inventory of IRG4IBC30KDPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRG4IBC30KDPBF is usually 5 days.

3.What payment methods are accepted for IRG4IBC30KDPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRG4IBC30KDPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRG4IBC30KDPBF?

IRG4IBC30KDPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRG4IBC30KDPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRG4IBC30KDPBF?

For technical support, including IRG4IBC30KDPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRG4IBC30KDPBF requirements.

6.How does Aetrix verify that IRG4IBC30KDPBF is sourced from the original manufacturer or authorized distributors?

All IRG4IBC30KDPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRG4IBC30KDPBF meets industry standards.

7.What is the process for return or replacement of IRG4IBC30KDPBF?

All IRG4IBC30KDPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRG4IBC30KDPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRG4IBC30KDPBF part is unused and in its original packaging.

Return procedure for IRG4IBC30KDPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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