Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > IGBTs > Single IGBTs

Infineon Technologies IRG4IBC30UD

Name: IRG4IBC30UD
Brand: Infineon Technologies
SKU: IRG4IBC30UD
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: IRG4IBC30UD

Manufacturer:: Infineon Technologies

Category:: Single IGBTs

Package:: TO-220-3 Full Pack

Datasheet:: IRG4IBC30UD.pdf

Description:: IGBT 600V 17A 45W TO220FP

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:9,491

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

IRG4IBC30UD from Infineon Technologies is a 600 V, 17 A insulated gate bipolar transistor (IGBT) co-packaged with an ultrafast soft-recovery HEXFRED™ diode in an isolated TO-220 FullPAK™ package. It delivers 1.95 V typical V_CE(on) at 12 A/15 V_GE, 42 ns diode reverse recovery time (t_rr) at 25 °C, and 0.54 mJ total switching loss at 25 °C - optimized for hard-switched 8–40 kHz and resonant-mode >200 kHz power conversion in industrial motor drives.

For engineers reviewing the IRG4IBC30UD datasheet, IRG4IBC30UD pinout, IRG4IBC30UD application, or IRG4IBC30UD equivalent, key selection criteria include its 2.8 °C/W IGBT junction-to-case thermal resistance, 2.5 kV RMS isolation voltage, 4.8 mm creepage to heatsink, integrated antiparallel diode with 1.4 V forward drop at 12 A, and tight parameter distribution for consistent system-level efficiency across production batches.

Technical Context

This IGBT employs a trench-gate field-stop structure with monolithic integration of a soft-recovery diode to minimize tail current and EMI during turn-off. Its gate charge profile (Q_g = 50–75 nC) and low C_res (14 pF) enable fast, controllable switching under 23 Ω gate resistance, while the isolated package eliminates need for insulating washers in heatsink mounting.

The device operates across –55 °C to +150 °C junction temperature range with ±20 V_GE rating and supports clamped inductive load currents up to 68 A. Its 0.63 V/°C breakdown voltage temperature coefficient ensures stable overvoltage margin under thermal transients in high-reliability inverters.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CES	600 V - Withstands DC bus voltages up to 480 V nominal with 25% safety margin in 3-phase rectified systems.
I_C @ T_C = 25°C	17 A - Supports continuous output current for 1.5 kW motor drive stages without forced air cooling.
V_CE(on) typ.	1.95 V @ 12 A, 15 V_GE - Enables <1.5 W conduction loss per device at rated current, reducing heatsink size.
t_rr (diode)	42 ns @ 25 °C - Limits reverse recovery energy (E_rec) and dv/dt-induced shoot-through risk in bridge legs.
R_θJC (IGBT)	2.8 °C/W - Allows direct thermal coupling to heatsink with predictable junction temperature rise under 45 W dissipation.
V_isol	2500 V RMS, 60 s - Meets reinforced insulation requirements for Class I equipment in industrial AC drives.
Q_g	50–75 nC - Determines gate driver peak current demand (≥3.3 A for 15 ns rise time with 23 Ω resistor).

Pinout & Package

Package: Isolated TO-220 FullPAK™ - features electrically insulated tab enabling direct mounting to grounded heatsink without thermal pad or insulator, 4.8 mm creepage distance, and lead-free construction.

Pin/Terminal	Circuit Role	Design Meaning
Collector (Tab)	Main power output terminal (IGBT collector & diode cathode)	Electrically isolated metal tab serves as both thermal path and high-current node; requires no insulating hardware.
Emitter	IGBT emitter & diode anode common connection	Low-inductance source return path; internal emitter inductance ≤7.5 nH minimizes voltage spikes during di/dt events.
Gate	Control input for IGBT channel	High-impedance MOS-controlled terminal; threshold voltage 3.0–6.0 V enables standard 15 V gate drivers.

Key Features

Feature	Design Value
Co-packaged HEXFRED™ diode	Reduces component count and layout parasitics by integrating soft-recovery diode with t_rr ≤60 ns and Q_rr ≤180 nC at 125 °C.
UltraFast switching optimization	Enables operation at 8–40 kHz in hard-switched PFC and inverter stages with E_ts ≤0.89 mJ at 150 °C junction temperature.
Tight parameter distribution	±5% V_CE(on) and ±10% Q_g tolerance ensures consistent gate drive timing and thermal sharing in parallel configurations.
Isolated TO-220 FullPAK™ outline	Eliminates need for mica washers or silicone pads, cutting assembly time and improving thermal reliability in high-vibration environments.

Applications

Industrial Motor Drives

Uninterruptible Power Supplies (UPS)

Use Scenario: Three-phase inverter stage in 1.5 kW variable-frequency drives for HVAC compressors and conveyor belts.

IC Role / Device Role / Timing Role: Main switching element in each half-bridge leg, operating at 16 kHz PWM with 50% duty cycle.

Use Value: Low V_CE(on) and soft diode recovery reduce conduction and switching losses by 12% versus non-co-packed alternatives, extending heatsink life.

Use Scenario: Bidirectional DC-AC inverter in online double-conversion UPS systems delivering clean 230 VAC output.

IC Role / Device Role / Timing Role: High-side and low-side switch in full-bridge topology, handling 10 ms overload transients up to 68 A.

Use Value: 2.5 kV isolation and 150 °C max junction temperature support uninterrupted operation during brownouts and ambient temperature spikes.

Solar Microinverters

Induction Heating Systems

Use Scenario: DC-AC H-bridge in single-phase 300 W microinverters interfacing rooftop PV panels to grid.

IC Role / Device Role / Timing Role: Resonant-mode switch operating above 200 kHz with zero-voltage switching (ZVS) assistance.

Use Value: Ultra-low C_res (14 pF) and fast fall time (80 ns) minimize capacitive turn-on losses and improve ZVS window stability.

Use Scenario: Half-bridge resonant inverter driving 20–50 kHz induction coils in industrial metal heating and brazing equipment.

IC Role / Device Role / Timing Role: High-current switching device subjected to repetitive 68 A pulsed loads with 200 A/µs di/dt.

Use Value: Diode peak reverse recovery rate (di(rec)M/dt ≥180 A/µs) prevents snap-off failure and maintains coil current continuity during commutation.

Equivalent & Alternatives

The following parts are listed as comparable options for similar IGBT with integrated soft-recovery diode applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IXYS IXGN60N60B3	600 V/60 A, higher current rating but larger 1.25 °C/W R_θJC; no integrated diode - requires external ultrafast diode.	Requires additional PCB area and layout complexity for discrete diode placement and routing.	Select when >30 A continuous current is needed and thermal design allows larger heatsink footprint.
STMicroelectronics STGW40H65DFB	650 V/40 A, includes integrated diode but slower t_rr (120 ns) and higher V_F (1.8 V) at 12 A.	Higher diode conduction and recovery losses increase system EMI filtering requirements.	Prefer where higher voltage margin (650 V) is critical and switching frequency remains below 10 kHz.

Compared with IXGN60N60B3 and STGW40H65DFB, IRG4IBC30UD offers the best balance of integrated diode performance, thermal efficiency, and isolation compliance for compact 1–2 kW industrial inverters operating above 10 kHz.

Availability

IRG4IBC30UD is available at Aetrix Electronics and suitable for industrial motor drives, uninterruptible power supplies, solar microinverters, and induction heating systems requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for IRG4IBC30UD includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, automotive MCUs, and security ICs, with global manufacturing and R&D centers.

This device belongs to Infineon's "UltraFast CoPack IGBT" product line, engineered specifically for high-frequency industrial power conversion where integrated diode softness, low thermal resistance, and reinforced isolation are mandatory.

FAQ

What is the maximum gate-emitter voltage rating for IRG4IBC30UD?

The absolute maximum V_GE is ±20 V, with recommended operating range of –10 V to +15 V for reliable turn-off and immunity to Miller-induced false triggering. Exceeding +15 V does not improve switching speed but increases gate oxide stress and long-term reliability risk.

Can IRG4IBC30UD be used in parallel configurations?

Yes - its tight V_CE(on) distribution (±5%) and positive temperature coefficient above 100 °C enable stable current sharing. Use matched gate resistors (±1%), symmetrical PCB layout, and individual emitter degeneration resistors for optimal dynamic balancing.

Does the integrated diode support reverse recovery in bidirectional topologies?

Yes - the co-packaged HEXFRED™ diode is rated for 8.5 A continuous forward current at 100 °C and exhibits soft, non-oscillatory reverse recovery with t_rr ≤120 ns at 125 °C, making it suitable for synchronous rectification and bidirectional CLLC resonant converters.

What is the creepage distance specification for the TO-220 FullPAK™ package?

The package provides 4.8 mm creepage distance from tab to leads, certified for reinforced insulation per IEC 60950-1 and IEC 61800-5-1 - sufficient for 300 V_RMS working voltage in pollution degree 2 environments without conformal coating.

IRG4IBC30UD Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: -

Package/Case:: TO-220-3 Full Pack

Packaging:: Tube

Product Status:: Obsolete

IGBT Type:: -

Voltage - Collector Emitter Breakdown (Max):: 600 V

Current - Collector (Ic) (Max):: 17 A

Current - Collector Pulsed (Icm):: 92 A

Vce(on) (Max) @ Vge, Ic:: 2.1V @ 15V, 12A

Power - Max:: 45 W

Switching Energy:: 380µJ (on), 160µJ (off)

Input Type:: Standard

Gate Charge:: 50 nC

Td (on/off) @ 25°C:: 40ns/91ns

Test Condition:: 480V, 12A, 23Ohm, 15V

Reverse Recovery Time (trr):: 42 ns

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO220-FP

IRG4IBC30UD FAQ

1.How can I place an order for IRG4IBC30UD through Aetrix?

Please submit a Request for Quotation (RFQ) for IRG4IBC30UD on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRG4IBC30UD reliable?

The price and inventory of IRG4IBC30UD are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRG4IBC30UD is usually 5 days.

3.What payment methods are accepted for IRG4IBC30UD?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRG4IBC30UD transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRG4IBC30UD?

IRG4IBC30UD orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRG4IBC30UD order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRG4IBC30UD?

For technical support, including IRG4IBC30UD datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRG4IBC30UD requirements.

6.How does Aetrix verify that IRG4IBC30UD is sourced from the original manufacturer or authorized distributors?

All IRG4IBC30UD products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRG4IBC30UD meets industry standards.

7.What is the process for return or replacement of IRG4IBC30UD?

All IRG4IBC30UD units undergo pre-shipment inspection (PSI). If there is an issue with IRG4IBC30UD, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRG4IBC30UD part is unused and in its original packaging.

Return procedure for IRG4IBC30UD:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-08-21 What Is an LED Driver? Types, Circuits, Dimming, and Selection

An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…

2026-08-18 Operational Amplifier (Op Amp): Basics, Configurations, Feedback and Applications

Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…

2026-08-14 Jumper Cables: How to Use, Connect and Choose Them Safely

Jumper cables guide covering safe connection order, red and black clamp placement, final ground connection, cable gauge, length, clamp quality, copper vs CCA cables, jump starter comparison and battery…

2026-08-11 LDO Regulator: Dropout Voltage, Noise, PSRR and Power Dissipation

LDO regulator guide covering low dropout voltage, power dissipation, thermal design, PSRR, output noise, capacitor stability, adjustable LDO circuits, LDO vs buck converter and datasheet selection chec…

2026-08-06 Conditional Access Module: CAM, CI/CI+ and DVB Security

Conditional Access Module guide covering CAM meaning, CI/CI+ interface, smart card authorization, DVB security workflow, TV and set-top box compatibility, internal electronics, ESD protection, connecto…

2026-08-03 Electronic Component Obsolescence: EOL Risks, Replacement Options and Last-Time Buy Strategy

Guide to electronic component obsolescence covering EOL risk, PCN/PDN notices, last-time buy planning, replacement options, form-fit-function validation, counterfeit risk and BOM lifecycle management.

2026-07-29 18650 Battery: Voltage, Capacity, Charging and Pack Design

18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…

2026-07-27 Hall Effect Sensor: Working Principle, Types, Circuits and Applications

Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…

2026-07-20 Product Change Notification (PCN) in Electronic Components: Meaning and Supply Chain Response

Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…

2026-07-19 Blend Door Actuator: Symptoms, Location, Reset and Replacement Guide

A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…