Infineon Technologies IRG4IBC30UDPBF

Overview

IRG4IBC30UDPBF from Infineon Technologies is a 600 V, 17 A insulated gate bipolar transistor co-packaged with an ultrafast soft-recovery HEXFRED diode in a TO-220 FullPAK package. It delivers 1.95 V typical V_CE(on) at 12 A/15 V_GE, 42 ns diode reverse recovery time (t_rr) at 25 °C, and 0.54 mJ total switching loss at 25 °C - optimized for hard-switched PFC and motor drives operating at 8–40 kHz.

For engineers reviewing the IRG4IBC30UDPBF datasheet, IRG4IBC30UDPBF pinout, IRG4IBC30UDPBF application, or IRG4IBC30UDPBF equivalent, key selection criteria include its 2.8 °C/W IGBT junction-to-case thermal resistance, 2.5 kV isolation rating, tight parameter distribution, and integrated antiparallel diode with <60 ns t_rr and <6 A I_RRM at 125 °C.

Technical Context

This IGBT employs a trench-gate field-stop structure enabling low conduction loss while maintaining fast, soft turn-off behavior. Its co-packaged HEXFRED diode features low Q_rr (80–180 nC), controlled di/dt during recovery (<200 A/µs), and minimized EMI generation in high-frequency switching topologies.

The device supports gate drive with ±20 V maximum V_GE, exhibits -11 mV/°C threshold voltage drift, and maintains stable V_CE(on) up to 150 °C (2.09 V at 12 A). Thermal design is enabled by isolated mounting (2.5 kV RMS) and 4.8 mm creepage distance to heatsink.

Key Specifications

Pinout & Package

TO-220 FullPAK package with electrically isolated tab (mounting surface), 3-pin configuration, and lead-free finish. The case serves as the collector terminal and provides galvanic isolation from heatsink.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar IGBT + integrated diode applications.

Compared with STGP30NC60WD and IXGN30N60B3, IRG4IBC30UDPBF uniquely combines certified 2.5 kV isolation, TO-220 FullPAK simplicity, and balanced 1.95 V/42 ns performance - making it optimal for cost-sensitive, safety-compliant 1–2 kW industrial and consumer power stages where board space and assembly complexity matter.

Availability

IRG4IBC30UDPBF is available at Aetrix Electronics and suitable for industrial motor drives, server PFC modules, solar microinverters, and induction cooking systems requiring stable component supply, long-lifecycle support, and certified isolation compliance.

Supply support for IRG4IBC30UDPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and automotive ICs, with global manufacturing and quality certification to ISO 9001 and IATF 16949.

This device belongs to Infineon's "UltraFast CoPack" IGBT family, engineered specifically for high-frequency hard-switched and resonant power conversion where low-loss switching, soft recovery, and integrated isolation reduce system-level EMI and thermal design burden.

FAQ

What is the maximum gate resistor value recommended for reliable turn-off?

With R_G = 23 Ω, td(off) is 91–140 ns and E_off is 0.16 mJ at 25 °C. Increasing R_G beyond 33 Ω extends td(off) nonlinearly and raises E_off sharply - especially above 100 °C - risking thermal runaway. For 12 A operation, 15–23 Ω is optimal to balance speed and loss.

Can IRG4IBC30UDPBF be used in parallel configurations?

Yes - its positive V_CE(on) temperature coefficient (0.63 V/°C) and tight parameter distribution (±10%) support current sharing. Parallel operation requires matched gate resistors, symmetrical PCB layout, and shared heatsink mounting to maintain ΔT_J < 5 °C between devices.

Does the isolation rating apply to continuous or transient conditions?

The 2500 V RMS isolation voltage is rated for 60 seconds per UL 60950-1 and IEC 60747-5-2. It is not a continuous working voltage; sustained voltage across the isolation barrier must remain below 500 V RMS for long-term reliability.

What is the safe operating area (SOA) limitation at 100 °C case temperature?

At T_C = 100 °C, the DC SOA is limited to 8.9 A at V_CE ≤ 200 V. For pulse operation (≤100 µs), the device supports up to 68 A at V_CE ≤ 400 V, provided peak power does not exceed 45 W and junction temperature stays within -55 to +150 °C.