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Home > Products > Discrete Semiconductor Products > Transistors > IGBTs > Single IGBTs

Infineon Technologies IRG4IBC30WPBF

Name: IRG4IBC30WPBF
Brand: Infineon Technologies
SKU: IRG4IBC30WPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRG4IBC30WPBF

Manufacturer:: Infineon Technologies

Category:: Single IGBTs

Package:: TO-220-3 Full Pack

Datasheet:: IRG4IBC30WPBF.pdf

Description:: IGBT 600V 17A 45W TO220FP

Quantity:: RFQ Add To RFQ list

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Inventory:8,697

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Product details

Overview

IRG4IBC30WPBF from Infineon Technologies (formerly International Rectifier) is a 600 V, 17 A insulated gate bipolar transistor (IGBT) in TO-220 Fullpak package, featuring 2.5 kV insulation voltage, 51 nC typical total gate charge, and 2.45 V typical V_CE(sat) at 12 A/15 V_GE. It is engineered for hard-switched SMPS and boost PFC stages operating up to 150 kHz with low conduction and switching losses.

For engineers reviewing the IRG4IBC30WPBF datasheet, IRG4IBC30WPBF pinout, IRG4IBC30WPBF application, or IRG4IBC30WPBF equivalent, key selection criteria include its 600 V V_CES, 92 A pulsed current rating, 2.8 °C/W junction-to-case thermal resistance, 0.13 mJ E_off, and suitability for isolated high-voltage DC-DC converters and active front-end rectifiers.

Technical Context

This IGBT employs a trench-gate field-stop structure optimized for soft turn-off and minimal tail current, enabling efficient operation in continuous conduction mode (CCM) boost PFC and single-ended forward converters. Its 180 mJ avalanche energy rating supports unclamped inductive switching robustness.

The device integrates an electrically isolated mounting base rated for 2.5 kV AC (60 s), eliminating need for additional isolation hardware in offline power supplies. Gate threshold voltage of 3.0–6.0 V and negative temperature coefficient of V_CE(sat) ensure stable parallel operation and thermal runaway immunity.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CES	600 V - withstands full-line transient surges in 400 V DC bus applications without breakdown
I_C @ T_C = 25°C	17 A - supports continuous output power >150 W in TO-220 mounted designs
E_off	0.13 mJ - enables 150 kHz hard switching with <0.35 mJ total switching loss at 12 A
R_θJC	2.8 °C/W - allows 45 W dissipation with ≤125°C case temperature rise above ambient
V_CE(sat) @ 12 A	2.45 V - yields <30 W conduction loss at 12 A, critical for PFC efficiency targets
Q_g	51 nC typ - determines gate driver peak current requirement (~2.2 A for 23 Ω RG)
Insulation Voltage	2.5 kV AC, 60 s - eliminates external isolation barriers in Class I AC-DC supplies

Pinout & Package

IRG4IBC30WPBF uses the industry-standard isolated TO-220 Fullpak package with electrically insulated metal tab. The package provides creepage/clearance compliant with IEC 60950-1 and features lead-free (Pb-free) construction per RoHS.

Pin/Terminal	Circuit Role	Design Meaning
Collector (Tab)	Main power output terminal	Electrically isolated metal tab serves as high-current collector node and heatsink interface
Emitter	Power return path	Low-inductance emitter connection (7.5 nH internal inductance) minimizes switching voltage overshoot
Gate	Control input	High-impedance MOS-controlled terminal requiring ±20 V absolute max drive voltage

Key Features

Feature	Design Value
Hard-switching frequency support	Up to 150 kHz with <0.35 mJ total switching loss at 12 A - enables compact magnetics in SMPS
Clamped inductive load capability	92 A I_LM with 180 mJ avalanche energy - sustains repetitive unclamped inductive turn-off in PFC chokes
Thermal stability	Negative dV_CE(sat)/dT_J coefficient and 150°C max T_J - ensures safe parallel operation and overtemperature margin
Isolation integrity	2.5 kV AC, 60 s isolation between collector and mounting surface - removes need for insulating pads in chassis-grounded designs

Applications

Industrial SMPS

Active Front-End Rectifiers

Use Scenario: 3 kW telecom rectifier with interleaved boost PFC stage operating at 100 kHz.

IC Role / Device Role / Timing Role: Main switch in boost converter cell handling 12 A RMS input current at 400 V DC bus.

Use Value: 50% lower E_off vs. prior generation reduces thermal stress on heatsink by 18 W at full load.

Use Scenario: Grid-tied solar inverter with three-phase active front-end for harmonic mitigation.

IC Role / Device Role / Timing Role: High-side IGBT in Vienna rectifier leg switching at 120 kHz with sinusoidal current shaping.

Use Value: 2.45 V V_CE(sat) limits conduction loss to 29 W per device, enabling 98.2% PFC efficiency.

Offline UPS Inverters

Induction Heating Drivers

Use Scenario: Online double-conversion UPS delivering 2 kVA with 60 Hz output and 10 kHz H-bridge inverter stage.

IC Role / Device Role / Timing Role: Low-side switch in full-bridge inverter driving LC resonant tank with 17 A peak current.

Use Value: 92 A pulsed current rating accommodates 3× overload peaks without derating.

Use Scenario: 5 kW induction cooker operating in asymmetrical resonant topology at 25–50 kHz.

IC Role / Device Role / Timing Role: Half-bridge upper switch controlling resonant tank current with zero-voltage switching assist.

Use Value: 7.5 nH internal emitter inductance suppresses dv/dt-induced false triggering during ZVS transitions.

Equivalent & Alternatives

The following parts are listed as comparable options for similar IGBT switch applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STGP10NC60KD	600 V/10 A, 1.95 V V_CE(sat), 35 nC Q_g, TO-220FP package without isolation	Lacks 2.5 kV isolation; requires external insulator pad; lower current rating	Select when isolation is handled externally and cost sensitivity outweighs thermal advantage
IXGH12N60C3D1	600 V/12 A, 2.2 V V_CE(sat), 42 nC Q_g, TO-247 package with isolated tab	Higher R_θJC (0.5 °C/W) but larger package; no Fullpak footprint compatibility	Select when higher surge current (120 A) and superior thermal performance justify PCB layout change

Compared with STGP10NC60KD and IXGH12N60C3D1, IRG4IBC30WPBF uniquely balances 17 A current capability, integrated 2.5 kV isolation, and TO-220 footprint-making it optimal for space-constrained, safety-critical 150–300 W PFC modules where mounting simplicity and creepage compliance are non-negotiable.

Availability

IRG4IBC30WPBF is available at Aetrix Electronics and suitable for industrial SMPS, active front-end rectifiers, offline UPS inverters, and induction heating drivers requiring stable component supply across multi-year production cycles.

Supply support for IRG4IBC30WPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and energy systems.

This IGBT belongs to Infineon's legacy "IR" high-voltage IGBT portfolio, designed specifically for high-efficiency, high-reliability switch-mode power conversion in AC-DC and DC-AC topologies up to 300 kHz.

FAQ

What is the maximum gate drive voltage for reliable operation?

The absolute maximum gate-to-emitter voltage is ±20 V. Operation above +15 V or below –10 V risks permanent gate oxide damage. Recommended drive is +15 V for turn-on and –5 V to –10 V for active Miller clamping during turn-off to prevent spurious conduction.

Can IRG4IBC30WPBF be used in resonant LLC topologies?

Yes - its low minority-carrier recombination and 7.5 nH internal emitter inductance support clean zero-voltage switching up to >300 kHz. However, gate drive must be precisely timed to avoid shoot-through during dead-time, and V_CE snubbing remains essential due to lack of built-in freewheeling diode.

Does this part include an integrated anti-parallel diode?

No - IRG4IBC30WPBF is a discrete IGBT without an integrated freewheeling diode. An external ultrafast recovery diode (e.g., ISL9R1560P2) must be co-packaged or placed in close proximity to handle reverse current in bridge configurations.

What is the recommended gate resistor value for 100 kHz PFC operation?

A 23 Ω gate resistor is validated in the datasheet for 12 A, 480 V conditions, yielding 99 ns t_d(off) and 67 ns t_f. For 100 kHz PFC, use 18–27 Ω depending on driver capability and required E_off/E_on balance - lower values reduce switching loss but increase EMI and gate driver stress.

IRG4IBC30WPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: -

Package/Case:: TO-220-3 Full Pack

Packaging:: Tube

Product Status:: Obsolete

IGBT Type:: -

Voltage - Collector Emitter Breakdown (Max):: 600 V

Current - Collector (Ic) (Max):: 17 A

Current - Collector Pulsed (Icm):: 92 A

Vce(on) (Max) @ Vge, Ic:: 2.7V @ 15V, 12A

Power - Max:: 45 W

Switching Energy:: 130µJ (on), 130µJ (off)

Input Type:: Standard

Gate Charge:: 51 nC

Td (on/off) @ 25°C:: 25ns/99ns

Test Condition:: 480V, 12A, 23Ohm, 15V

Reverse Recovery Time (trr):: -

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220AB Full-Pak

IRG4IBC30WPBF FAQ

1.How can I place an order for IRG4IBC30WPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRG4IBC30WPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRG4IBC30WPBF reliable?

The price and inventory of IRG4IBC30WPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRG4IBC30WPBF is usually 5 days.

3.What payment methods are accepted for IRG4IBC30WPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRG4IBC30WPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRG4IBC30WPBF?

IRG4IBC30WPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRG4IBC30WPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRG4IBC30WPBF?

For technical support, including IRG4IBC30WPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRG4IBC30WPBF requirements.

6.How does Aetrix verify that IRG4IBC30WPBF is sourced from the original manufacturer or authorized distributors?

All IRG4IBC30WPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRG4IBC30WPBF meets industry standards.

7.What is the process for return or replacement of IRG4IBC30WPBF?

All IRG4IBC30WPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRG4IBC30WPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRG4IBC30WPBF part is unused and in its original packaging.

Return procedure for IRG4IBC30WPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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