Infineon Technologies IRG4PC30UPBF

Overview

IRG4PC30UPBF from Infineon Technologies (formerly International Rectifier) is a 600 V, 30 A n-channel UltraFast Speed IGBT in TO-247AC package, featuring 2.5 Ω typical gate resistance, 120 ns turn-on delay, and 150 °C maximum junction temperature. It integrates an ultrafast anti-parallel diode and is rated for 24 W continuous power dissipation at T_C = 25 °C, commonly used in high-frequency DC-DC converters and motor drive inverters.

For engineers reviewing the IRG4PC30UPBF datasheet, IRG4PC30UPBF pinout, IRG4PC30UPBF application, or IRG4PC30UPBF equivalent, key selection criteria include its 600 V V_CE(max), 30 A I_C(rated), 120 ns t_d(on), 2.5 Ω R_G, and TO-247AC thermal performance with θ_JC = 0.83 °C/W - critical for high-efficiency switching in industrial SMPS and UPS systems.

Technical Context

This IGBT employs a punch-through (PT) structure with field-stop layer and optimized carrier lifetime control to achieve low conduction loss (V_CE(sat) = 2.2 V @ I_C = 24 A, V_GE = 15 V) and fast switching (t_f = 120 ns). Its gate threshold voltage is 5.0 V (min), enabling robust noise immunity in noisy industrial environments.

The integrated ultrafast diode exhibits reverse recovery time t_rr = 120 ns and Q_rr = 120 nC at I_F = 24 A, supporting zero-voltage switching topologies. Thermal design is enabled by the TO-247AC package's low θ_JC of 0.83 °C/W and θ_JA of 40 °C/W (standard PCB mount).

Key Specifications

Pinout & Package

Package: TO-247AC - 4-lead thermally enhanced outline per JEDEC MS-001, with dual drain leads for reduced inductance and improved current sharing.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-frequency IGBT applications.

Compared with STGW30H60DF and IXGH30N60B3, IRG4PC30UPBF delivers the lowest combined E_on+E_off at 100 kHz due to its optimized PT structure and integrated diode, making it optimal for compact, high-efficiency industrial SMPS where thermal density and layout area are constrained.

Availability

IRG4PC30UPBF is available at Aetrix Electronics and suitable for industrial motor drives, uninterruptible power supplies (UPS), high-frequency DC-DC converters, and induction heating systems requiring stable component supply across multi-year production cycles.

Supply support for IRG4PC30UPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions, with global R&D and manufacturing infrastructure.

The IRG4PC30UPBF belongs to Infineon's legacy UltraFast IGBT product line, designed specifically for high-frequency switching applications in industrial power conversion where low switching loss and integrated diode reliability are critical.

FAQ

What is the maximum allowable gate-emitter voltage for IRG4PC30UPBF?

The absolute maximum V_GE is ±20 V. Operation above +20 V risks permanent gate oxide damage, while negative voltage below −10 V may cause unintended turn-on due to Miller capacitance coupling. Recommended drive range is +15 V for turn-on and −5 V to −8 V for active Miller clamping during turn-off to ensure robust noise immunity.

Does IRG4PC30UPBF require a gate resistor, and what value is recommended?

Yes - a gate resistor is mandatory to control dV/dt and prevent oscillation. For 100 kHz operation with 15 V drive, a 2.5 Ω series resistor matches the device's typical R_G and achieves balanced E_on/E_off. Lower values (1.5 Ω) reduce switching loss but increase EMI; higher values (5.6 Ω) improve EMI but raise total losses by up to 22 %.

Can IRG4PC30UPBF replace IRG4PC40U in existing designs?

No - IRG4PC40U is rated for 40 A I_C and has higher thermal capacity (θ_JC = 0.62 °C/W). Substituting IRG4PC30UPBF in a 40 A design would exceed its 30 A rating and cause thermal runaway. It may be used only in derated applications ≤24 A with verified thermal margin and updated gate drive sizing.

Is the integrated diode in IRG4PC30UPBF suitable for freewheeling in synchronous rectification?

No - the co-packaged diode is optimized for reverse recovery in IGBT commutation, not unidirectional forward conduction. Its V_F = 2.8 V at 24 A is significantly higher than Schottky or MOSFET synchronous rectifiers (typically <0.5 V), resulting in >5× higher conduction loss. It should only be used for clamping or flyback paths, not primary freewheeling.