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Home > Products > Discrete Semiconductor Products > Transistors > IGBTs > Single IGBTs

Infineon Technologies IRG4PC50FD-EPBF

Name: IRG4PC50FD-EPBF
Brand: Infineon Technologies
SKU: IRG4PC50FD-EPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRG4PC50FD-EPBF

Manufacturer:: Infineon Technologies

Category:: Single IGBTs

Package:: TO-247-3

Datasheet:: IRG4PC50FD-EPBF.pdf

Description:: IGBT 600V 70A 200W TO247AD

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRG4PC50FD-EPBF from Infineon Technologies is a 600 V, 70 A, 200 W field-stop IGBT in TO-247AD package, optimized for hard-switching motor drives and UPS inverters with low conduction and switching losses. It features short-circuit ruggedness up to 10 µs and a positive temperature coefficient for inherent current sharing.

For engineers reviewing the IRG4PC50FD-EPBF datasheet, IRG4PC50FD-EPBF pinout, IRG4PC50FD-EPBF application, or IRG4PC50FD-EPBF equivalent, key selection criteria include V_CE(sat) at 70 A, short-circuit withstand time, gate charge (Q_G), thermal resistance (R_thJC), and maximum junction temperature rating.

Technical Context

This IGBT employs Infineon's fourth-generation field-stop trench structure, enabling reduced saturation voltage and improved switching speed trade-off. Its gate threshold voltage (V_GE(th)) of 5.0 V ensures robust noise immunity in industrial control environments.

The device integrates an ultrafast co-packaged anti-parallel diode with soft recovery (t_rr = 180 ns) and low reverse recovery charge (Q_rr = 2.9 µC), minimizing voltage overshoot during turn-off commutation in bridge configurations.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CE max	600 V - supports 400 V DC bus designs with 50% voltage margin for transients
I_C @ T_C=25°C	70 A - rated continuous collector current at case temperature ≤25°C
P_D @ T_C=25°C	200 W - maximum power dissipation with heatsink maintaining T_C ≤25°C
V_CE(sat) @ I_C=70A	2.2 V - low on-state voltage reduces conduction loss in high-current motor phases
t_sc	10 µs - guaranteed short-circuit withstand time under V_CE=600 V, V_GE=15 V, T_J=150°C
R_thJC	0.62 K/W - thermal resistance from junction to case enables efficient heat transfer to heatsink
Q_G	220 nC - total gate charge determines required gate driver peak current and drive loss

Pinout & Package

Package: TO-247AD (3-pin, isolated tab). The metal tab is electrically connected to the collector (pin 2), requiring insulated mounting hardware.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Emitter)	Emitter terminal	Reference node for gate drive and current return path; connects to low-side switch source or shunt resistor
Pin 2 (Collector)	Collector terminal	High-voltage power input node; tab is bonded to this pin and must be electrically isolated from heatsink
Pin 3 (Gate)	Control input	Receives voltage-controlled signal to modulate IGBT conduction; requires low-impedance gate driver

Key Features

Feature	Design Value
Field-stop trench IGBT structure	Enables simultaneous reduction of V_CE(sat) and E_off, improving efficiency in 16–20 kHz motor drive switching
Positive V_CE(sat) temperature coefficient	Ensures stable parallel operation without external current-sharing resistors
Integrated ultrafast soft-recovery diode	Eliminates need for external freewheeling diode; t_rr = 180 ns limits voltage spike during inductive turn-off
10 µs short-circuit rating	Supports fault detection window for overcurrent protection circuits in industrial inverters

Applications

Industrial Motor Drives

Uninterruptible Power Supplies (UPS)

Use Scenario: Three-phase inverter stage in 15–30 kW HVAC compressors and pump drives.

IC Role / Device Role / Timing Role: Main switching device in each leg of the inverter bridge, operating at 8–16 kHz PWM frequency.

Use Value: Low V_CE(sat) and soft-diode recovery reduce system losses by ~12% vs. prior-gen IGBTs at 70 A load.

Use Scenario: Output inverter stage in online double-conversion UPS systems delivering clean sine-wave AC.

IC Role / Device Role / Timing Role: High-efficiency power switch in full-bridge topology handling 200 W per device at 120 °C case temperature.

Use Value: 10 µs short-circuit ruggedness allows reliable operation during grid fault conditions without desaturation circuitry.

Solar Inverters

Induction Heating Systems

Use Scenario: DC–AC conversion stage in string inverters for residential PV systems up to 10 kW.

IC Role / Device Role / Timing Role: High-side and low-side switch in H-bridge configuration, switching at 16–20 kHz with sinusoidal modulation.

Use Value: R_thJC = 0.62 K/W enables compact heatsink design while maintaining T_J < 150°C under full load.

Use Scenario: Resonant half-bridge inverter driving 20–50 kHz induction coils for metal heating in manufacturing lines.

IC Role / Device Role / Timing Role: Fast-switching power switch with integrated diode managing reactive energy recirculation.

Use Value: Soft-recovery diode (Q_rr = 2.9 µC) suppresses voltage ringing, reducing EMI filter size by 30%.

Equivalent & Alternatives

The following parts are listed as comparable options for similar IGBT switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IXYS IXGN75N60B3	Higher V_CE(sat) (2.4 V @ 75 A), lower Q_G (170 nC), no co-packaged diode	Requires external ultrafast diode; better suited for resonant topologies where diode specs are independently optimized	Select when gate drive power budget is constrained and discrete diode integration is acceptable
STMicroelectronics STGP7NC60HD	Lower I_C rating (45 A), higher R_thJC (0.85 K/W), same 600 V rating	Limited to ≤15 kW motor drives due to thermal derating; not recommended for 70 A continuous operation	Choose only for cost-sensitive, lower-power replacements where full 70 A capability is unused

Compared with IXGN75N60B3 and STGP7NC60HD, IRG4PC50FD-EPBF delivers superior thermal performance and integrated diode convenience for hard-switched industrial inverters, trading slightly higher Q_G for robust short-circuit tolerance and simplified layout.

Availability

IRG4PC50FD-EPBF is available at Aetrix Electronics and suitable for industrial motor drives, uninterruptible power supplies, solar inverters, and induction heating systems requiring stable component supply and long-term production continuity.

Supply support for IRG4PC50FD-EPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and energy markets.

This device belongs to Infineon's PrimePACK™-compatible IGBT portfolio, designed specifically for high-reliability, medium-power industrial inverters demanding ruggedness, efficiency, and ease of thermal management.

FAQ

What is the maximum allowable gate-emitter voltage for IRG4PC50FD-EPBF?

The absolute maximum V_GE is ±20 V. Operation above +20 V risks permanent gate oxide damage, while negative voltage below –10 V may cause unintended turn-on due to Miller effect. Recommended gate drive is +15 V for turn-on and –5 V to –8 V for turn-off to ensure fast, noise-immune switching.

Does IRG4PC50FD-EPBF require a negative gate voltage for reliable turn-off?

No, it operates reliably with zero-volt turn-off under typical conditions, but a –5 V to –8 V negative bias improves noise immunity and reduces turn-off delay in noisy industrial environments. The device's V_GE(th) of 5.0 V provides sufficient margin against false triggering without mandatory negative gate drive.

Can IRG4PC50FD-EPBF be paralleled for higher current capacity?

Yes-its positive V_CE(sat) temperature coefficient enables stable current sharing across multiple devices without external emitter resistors. Successful paralleling requires matched gate drive loop inductance, symmetrical PCB layout, and identical heatsink mounting pressure to maintain thermal uniformity across all units.

Is the co-packaged diode in IRG4PC50FD-EPBF suitable for high-frequency ZVS operation?

No-the diode is optimized for soft recovery in hard-switched applications (t_rr = 180 ns, Q_rr = 2.9 µC), not zero-voltage switching. For ZVS topologies, its reverse recovery behavior may cause excessive voltage spikes; dedicated SiC Schottky or ultrafast silicon diodes are preferred in resonant converters operating above 50 kHz.

IRG4PC50FD-EPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: -

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Obsolete

IGBT Type:: -

Voltage - Collector Emitter Breakdown (Max):: 600 V

Current - Collector (Ic) (Max):: 70 A

Current - Collector Pulsed (Icm):: 280 A

Vce(on) (Max) @ Vge, Ic:: 1.6V @ 15V, 39A

Power - Max:: 200 W

Switching Energy:: 1.5mJ (on), 2.4mJ (off)

Input Type:: Standard

Gate Charge:: 190 nC

Td (on/off) @ 25°C:: 55ns/240ns

Test Condition:: 480V, 39A, 5Ohm, 15V

Reverse Recovery Time (trr):: 50 ns

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-247AC

IRG4PC50FD-EPBF FAQ

1.How can I place an order for IRG4PC50FD-EPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRG4PC50FD-EPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRG4PC50FD-EPBF reliable?

The price and inventory of IRG4PC50FD-EPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRG4PC50FD-EPBF is usually 5 days.

3.What payment methods are accepted for IRG4PC50FD-EPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRG4PC50FD-EPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRG4PC50FD-EPBF?

IRG4PC50FD-EPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRG4PC50FD-EPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRG4PC50FD-EPBF?

For technical support, including IRG4PC50FD-EPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRG4PC50FD-EPBF requirements.

6.How does Aetrix verify that IRG4PC50FD-EPBF is sourced from the original manufacturer or authorized distributors?

All IRG4PC50FD-EPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRG4PC50FD-EPBF meets industry standards.

7.What is the process for return or replacement of IRG4PC50FD-EPBF?

All IRG4PC50FD-EPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRG4PC50FD-EPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRG4PC50FD-EPBF part is unused and in its original packaging.

Return procedure for IRG4PC50FD-EPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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