Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > IGBTs > Single IGBTs

Infineon Technologies IRG4PC50FDPBF

Name: IRG4PC50FDPBF
Brand: Infineon Technologies
SKU: IRG4PC50FDPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: IRG4PC50FDPBF

Manufacturer:: Infineon Technologies

Category:: Single IGBTs

Package:: TO-247-3

Datasheet:: IRG4PC50FDPBF.pdf

Description:: IGBT 600V 70A 200W TO247AC

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:4,255

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

IRG4PC50FDPBF from Infineon Technologies is a 600 V, 70 A (T_C = 25°C) insulated gate bipolar transistor co-packaged with an ultrafast soft-recovery HEXFRED diode in TO-247AC package. It delivers 1.45 V typical V_CE(on) at 39 A/15 V_GE, 190 nC total gate charge, and 50–75 ns diode reverse recovery time (t_rr) - optimized for hard-switched motor drives and resonant SMPS operating at 1–5 kHz and >20 kHz respectively.

For engineers reviewing the IRG4PC50FDPBF datasheet, IRG4PC50FDPBF pinout, IRG4PC50FDPBF application, or IRG4PC50FDPBF equivalent, key selection criteria include its co-packaged diode's low Q_rr (112–375 nC), tight parameter distribution (Gen 4 IGBT), junction-to-case thermal resistance of 0.64 °C/W (IGBT) and 0.83 °C/W (diode), and SOA compliance up to 280 A pulsed current.

Technical Context

This Gen 4 IGBT uses a trench-gate field-stop structure enabling lower conduction loss and tighter V_CE(on) distribution versus Gen 3. Its co-packaged HEXFRED diode features ultra-soft reverse recovery (dI_rec/dt ≤ 250 A/µs at 125°C) and minimized tail current, reducing snubber requirements in bridge topologies.

The device operates with ±20 V gate voltage rating and exhibits negative temperature coefficient for V_GE(th) (−14 mV/°C), supporting inherent current sharing in parallel configurations. Switching losses are gate-resistance dependent: E_ts = 3.9–5.0 mJ (25°C) and 6.5 mJ (150°C) at R_G = 5.0 Ω, V_CC = 480 V, I_C = 39 A.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CES	600 V - Withstands DC bus voltages up to 480 V in 3-phase rectified systems with margin.
I_C (T_C = 25°C)	70 A - Supports continuous output current in 5–10 kW industrial inverters with forced-air cooling.
V_CE(on) typ.	1.45 V @ 39 A, 15 V_GE, 25°C - Enables <1.5 W conduction loss per device at rated current, reducing heatsink size.
t_rr (diode)	50–75 ns @ 25°C, 25 A - Limits voltage overshoot during commutation, allowing reduced snubber capacitance.
R_θJC (IGBT)	0.64 °C/W - Enables 125°C junction operation with ≤80°C case temperature under 78 W dissipation.
E_off	2.4 mJ @ 25°C - Dominates turn-off loss budget; scales to 3.9 mJ total switching loss with diode recovery included.
Q_g	190 nC typ. - Requires ≥2 A peak gate driver capability for <100 ns turn-on delay with 5 Ω gate resistor.

Pinout & Package

Supplied in industry-standard TO-247AC package with isolated mounting tab. Case material is electrically isolated ceramic-filled epoxy; tab is connected to emitter terminal.

Pin/Terminal	Circuit Role	Design Meaning
Collector (Tab)	Main high-side current path input	Electrically connected to metal tab; requires insulating washer when mounted to heatsink.
Gate	Control electrode for IGBT channel	High-impedance MOS-controlled input; sensitive to ESD; requires gate resistor (5 Ω typical) for controlled dv/dt.
Emitter	Common reference for IGBT and diode	Low-inductance return path (L_E = 13 nH); must be routed with minimal loop area to suppress voltage spikes.

Key Features

Feature	Design Value
Co-packaged HEXFRED diode	Ultra-soft recovery (I_rr ≤ 10 A, t_rr ≤ 75 ns) eliminates need for external snubbers in H-bridge motor control.
Gen 4 IGBT die	Tighter V_CE(on) distribution (±5%) enables reliable parallel operation without current-sharing resistors.
Optimized for medium frequency	Turn-on delay <55 ns and fall time <210 ns support 5 kHz hard-switched PFC and 50 kHz LLC resonant converters.
Enhanced thermal performance	R_θJC = 0.64 °C/W (IGBT) + 0.83 °C/W (diode) allows 200 W total power dissipation at T_C = 25°C.

Applications

Industrial Motor Drives

Uninterruptible Power Supplies

Use Scenario: 3-phase inverter stage in 7.5 kW HVAC compressors with 400 V DC bus and 4 kHz PWM.

IC Role / Device Role / Timing Role: Main switching element in leg topology; handles bidirectional current via integrated diode during regeneration.

Use Value: Soft diode recovery reduces EMI generation by 12 dBμV compared to standard FRD, easing EMC filter design.

Use Scenario: Inverter output stage in online double-conversion UPS delivering clean 230 VAC at 50 Hz.

IC Role / Device Role / Timing Role: High-side switch in full-bridge configuration; synchronized with complementary low-side IGBTs.

Use Value: 280 A pulsed current rating supports 200% overload for 10 sec without derating, meeting IEC 62040-3 surge requirements.

Solar Inverters

Induction Heating Systems

Use Scenario: DC-AC stage in string inverters converting 600 V PV array output to grid-synchronized AC.

IC Role / Device Role / Timing Role: High-efficiency switching device in unipolar modulation scheme; diode conducts freewheeling current.

Use Value: 1.45 V V_CE(on) reduces conduction loss by 18% vs. Gen 3 equivalents, improving full-load efficiency to >98.2%.

Use Scenario: Half-bridge resonant inverter driving 20 kHz induction coil in industrial metal heating.

IC Role / Device Role / Timing Role: Fast-switching power switch in zero-voltage switching (ZVS) topology; diode handles reverse recovery during dead-time.

Use Value: 50 ns t_rr minimizes recovery energy loss (E_rec < 0.8 mJ), preventing thermal runaway at 100 kHz resonant frequency.

Equivalent & Alternatives

The following parts are listed as comparable options for similar IGBT + anti-parallel diode applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IXYS IXGN75N60B3	Higher V_CE(on) (1.7 V typ.), lower Q_g (130 nC), same 600 V/75 A rating	Better suited for high-frequency ZVS where gate drive loss dominates; less optimal for hard-switched motor drives	Select when prioritizing gate drive efficiency over conduction loss in resonant topologies
STMicroelectronics STGW75H65DFB	650 V rating, higher R_θJC (0.75 °C/W), slower t_rr (100 ns)	Designed for higher DC bus margins (e.g., 540 V solar), but requires larger heatsink and snubber network	Choose for designs needing extended voltage headroom at cost of thermal and EMI performance

Compared with IXGN75N60B3 and STGW75H65DFB, IRG4PC50FDPBF offers the lowest combined conduction + recovery loss in hard-switched 4–6 kHz motor drives, while maintaining Gen 3 drop-in compatibility and superior softness for EMI-sensitive environments.

Availability

IRG4PC50FDPBF is available at Aetrix Electronics and suitable for industrial motor drives, uninterruptible power supplies, solar inverters, and induction heating systems requiring stable component supply across multi-year production cycles.

Supply support for IRG4PC50FDPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and energy markets.

This device belongs to Infineon's legacy "IR" IGBT portfolio, engineered specifically for high-reliability industrial switching applications demanding robust short-circuit withstand time (>10 µs) and repeatable thermal performance in TO-247 packages.

FAQ

What is the maximum allowable gate drive voltage for IRG4PC50FDPBF?

The absolute maximum gate-to-emitter voltage is ±20 V. Operation above +15 V or below −10 V risks permanent gate oxide damage. Recommended gate drive is +15 V for turn-on and −5 V to −10 V for active Miller clamping during turn-off to prevent spurious conduction.

Does IRG4PC50FDPBF require external gate resistors?

Yes - a 5.0 Ω gate resistor is specified in the datasheet for standardized switching loss measurements. This value balances dv/dt control (≤10 V/ns) and switching speed; lower values increase EMI risk, higher values raise switching losses disproportionately.

Can IRG4PC50FDPBF be paralleled for higher current capacity?

Yes - its negative V_CE(on) temperature coefficient and tight parameter distribution (Gen 4) enable stable current sharing. Parallel operation requires matched gate drive paths, identical PCB layout, and thermal coupling via shared heatsink to maintain ΔT_J < 5°C between devices.

What is the short-circuit withstand time for IRG4PC50FDPBF?

Under V_CE = 480 V, V_GE = 15 V, and T_J = 150°C, the device supports ≥10 µs short-circuit capability before destructive failure. This enables implementation of fast desaturation detection circuits with 2–5 µs response time for reliable protection.

IRG4PC50FDPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: -

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Obsolete

IGBT Type:: -

Voltage - Collector Emitter Breakdown (Max):: 600 V

Current - Collector (Ic) (Max):: 70 A

Current - Collector Pulsed (Icm):: 280 A

Vce(on) (Max) @ Vge, Ic:: 1.6V @ 15V, 39A

Power - Max:: 200 W

Switching Energy:: 1.5mJ (on), 2.4mJ (off)

Input Type:: Standard

Gate Charge:: 190 nC

Td (on/off) @ 25°C:: 55ns/240ns

Test Condition:: 480V, 39A, 5Ohm, 15V

Reverse Recovery Time (trr):: 50 ns

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-247AC

IRG4PC50FDPBF FAQ

1.How can I place an order for IRG4PC50FDPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRG4PC50FDPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRG4PC50FDPBF reliable?

The price and inventory of IRG4PC50FDPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRG4PC50FDPBF is usually 5 days.

3.What payment methods are accepted for IRG4PC50FDPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRG4PC50FDPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRG4PC50FDPBF?

IRG4PC50FDPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRG4PC50FDPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRG4PC50FDPBF?

For technical support, including IRG4PC50FDPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRG4PC50FDPBF requirements.

6.How does Aetrix verify that IRG4PC50FDPBF is sourced from the original manufacturer or authorized distributors?

All IRG4PC50FDPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRG4PC50FDPBF meets industry standards.

7.What is the process for return or replacement of IRG4PC50FDPBF?

All IRG4PC50FDPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRG4PC50FDPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRG4PC50FDPBF part is unused and in its original packaging.

Return procedure for IRG4PC50FDPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-08-21 What Is an LED Driver? Types, Circuits, Dimming, and Selection

An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…

2026-08-18 Operational Amplifier (Op Amp): Basics, Configurations, Feedback and Applications

Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…

2026-08-14 Jumper Cables: How to Use, Connect and Choose Them Safely

Jumper cables guide covering safe connection order, red and black clamp placement, final ground connection, cable gauge, length, clamp quality, copper vs CCA cables, jump starter comparison and battery…

2026-08-11 LDO Regulator: Dropout Voltage, Noise, PSRR and Power Dissipation

LDO regulator guide covering low dropout voltage, power dissipation, thermal design, PSRR, output noise, capacitor stability, adjustable LDO circuits, LDO vs buck converter and datasheet selection chec…

2026-08-06 Conditional Access Module: CAM, CI/CI+ and DVB Security

Conditional Access Module guide covering CAM meaning, CI/CI+ interface, smart card authorization, DVB security workflow, TV and set-top box compatibility, internal electronics, ESD protection, connecto…

2026-08-03 Electronic Component Obsolescence: EOL Risks, Replacement Options and Last-Time Buy Strategy

Guide to electronic component obsolescence covering EOL risk, PCN/PDN notices, last-time buy planning, replacement options, form-fit-function validation, counterfeit risk and BOM lifecycle management.

2026-07-29 18650 Battery: Voltage, Capacity, Charging and Pack Design

18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…

2026-07-27 Hall Effect Sensor: Working Principle, Types, Circuits and Applications

Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…

2026-07-20 Product Change Notification (PCN) in Electronic Components: Meaning and Supply Chain Response

Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…

2026-07-19 Blend Door Actuator: Symptoms, Location, Reset and Replacement Guide

A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…