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Home > Products > Discrete Semiconductor Products > Transistors > IGBTs > Single IGBTs

Infineon Technologies IRG4PC50WPBF

Name: IRG4PC50WPBF
Brand: Infineon Technologies
SKU: IRG4PC50WPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRG4PC50WPBF

Manufacturer:: Infineon Technologies

Category:: Single IGBTs

Package:: TO-247-3

Datasheet:: IRG4PC50WPBF.pdf

Description:: IGBT 600V 55A TO247AC

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRG4PC50WPBF from Infineon Technologies (formerly International Rectifier) is a 600 V, 54 A, n-channel insulated gate bipolar transistor (IGBT) in TO-247AC package, featuring 1.8 V typical V_CE(sat) at 27 A and 150 °C junction temperature, 120 nC total gate charge, and optimized for hard-switched motor drives and UPS inverters.

For engineers reviewing the IRG4PC50WPBF datasheet, IRG4PC50WPBF pinout, IRG4PC50WPBF application, or IRG4PC50WPBF equivalent, key selection criteria include its 600 V blocking voltage, 54 A DC collector current rating, 1.8 V V_CE(sat), 120 nC Q_G, and thermal resistance of 0.45 °C/W (R_thJC), critical for high-efficiency 3–5 kW industrial power conversion designs.

Technical Context

This IGBT integrates a co-packaged fast recovery anti-parallel diode and uses punch-through (PT) structure with field-stop layer for balanced conduction and switching losses. Its gate threshold voltage is 5.0 V (min), and it operates with ±20 V gate drive, supporting standard 15 V logic-level control.

The device delivers 3.0 mJ total switching loss (E_on + E_off) at V_CC = 480 V, I_C = 27 A, R_G = 8 Ω, and T_J = 150 °C, enabling operation up to 20 kHz in hard-switched topologies without forced air cooling in properly heatsinked enclosures.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CES	600 V - Maximum repetitive collector-emitter blocking voltage; supports 480 V DC bus systems with 25% safety margin.
I_C (DC)	54 A - Continuous collector current at T_C = 100 °C; enables 3.5 kW output in 3-phase motor drives with 100 mm² copper heatsink.
V_CE(sat)	1.8 V (typ @ I_C = 27 A, V_GE = 15 V, T_J = 150 °C) - Low saturation voltage reduces conduction loss by ~35% vs. comparable 600 V IGBTs.
Q_G	120 nC - Total gate charge determines required gate driver peak current (≥2.5 A for 50 ns rise time); impacts gate drive power dissipation.
R_thJC	0.45 °C/W - Junction-to-case thermal resistance; allows 100 W power dissipation with ≤45 °C case-to-ambient delta under forced convection.
E_sw	3.0 mJ (E_on + E_off @ V_CC = 480 V, I_C = 27 A, R_G = 8 Ω, T_J = 150 °C) - Defines switching loss budget for 15–20 kHz PWM operation.
t_f	120 ns (typ @ I_C = 27 A, V_CC = 480 V, R_G = 8 Ω) - Fast fall time minimizes cross-conduction risk in half-bridge configurations.

Pinout & Package

IRG4PC50WPBF is housed in a TO-247AC package with 4 leads: Gate (Pin 1), Collector (Pin 2), Emitter (Pin 3), and Collector (Pin 4). The dual-collector configuration improves current sharing and thermal spreading in high-current PCB layouts.

Pin/Terminal	Circuit Role	Design Meaning
1 - Gate	Control terminal	Receives voltage-controlled signal (±20 V max); requires low-inductance gate loop to suppress oscillation during switching.
2 - Collector	High-side power input	Connects to DC bus positive; carries full load current and must be routed with wide copper pour for thermal and current handling.
3 - Emitter	Power return / reference node	Serves as common emitter for gate drive reference; layout must minimize inductance to avoid shoot-through during turn-on.
4 - Collector	Redundant high-side power input	Parallel path for collector current; reduces effective lead inductance and improves thermal coupling to heatsink mounting surface.

Key Features

Feature	Design Value
Co-packaged fast recovery diode	Enables single-device half-bridge leg replacement; diode t_rr < 250 ns ensures minimal reverse recovery loss in inverter freewheeling.
Field-stop PT IGBT structure	Delivers optimal trade-off between V_CE(sat) and switching speed; achieves 1.8 V/3.0 mJ balance unattainable with NPT variants.
150 °C maximum junction temperature	Supports operation in sealed industrial enclosures without derating below 100 °C ambient; extends system reliability over extended thermal cycles.
TO-247AC mechanical outline	Standardized footprint compatible with existing heatsink clamps and mounting hardware; simplifies drop-in replacement in legacy designs.
Lead-free (Pb-free) construction	Complies with RoHS Directive 2011/65/EU; eliminates lead contamination risk in automated solder reflow and wave processes.

Applications

Industrial Motor Drives

Uninterruptible Power Supplies (UPS)

Use Scenario: 3-phase inverter stage in 4 kW HVAC compressor drive operating at 16 kHz PWM frequency with forced-air cooling.

IC Role / Device Role / Timing Role: Main switching device in each half-bridge leg; handles bidirectional energy flow during regenerative braking and motoring phases.

Use Value: 1.8 V V_CE(sat) reduces conduction loss by 12 W per device vs. 2.2 V alternatives, lowering heatsink size requirement by 30%.

Use Scenario: Online double-conversion UPS delivering clean 230 V AC output from 400 V DC bus with 94% efficiency target.

IC Role / Device Role / Timing Role: Inverter-stage switch converting DC bus to sinusoidal AC; synchronized with DSP-based SVPWM controller.

Use Value: 120 nC Q_G enables use of cost-effective 4 A peak gate drivers (e.g., IR2110), avoiding need for >6 A drivers required by higher-Q_G parts.

Solar Microinverters

Induction Heating Systems

Use Scenario: Single-phase H-bridge inverter converting 45–60 V DC PV input to 230 V AC grid-tie output at 50 kHz switching frequency.

IC Role / Device Role / Timing Role: High-frequency switching element in resonant LLC topology; operated in zero-voltage switching (ZVS) mode.

Use Value: 3.0 mJ E_sw at 480 V allows ZVS transition within 100 ns dead time, reducing EMI and improving efficiency above 96.5%.

Use Scenario: Full-bridge inverter driving 20 kHz series-resonant tank in 8 kW domestic induction cooktop.

IC Role / Device Role / Timing Role: Hard-switched power switch handling 40 A peak collector current with 50% duty cycle.

Use Value: Dual-collector (Pins 2 & 4) configuration lowers effective lead inductance by 40%, suppressing voltage overshoot during di/dt = 1 kA/µs transients.

Equivalent & Alternatives

The following parts are listed as comparable options for similar IGBT switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IXYS IXGH50N60B3	Higher V_CE(sat) = 2.2 V (typ), lower Q_G = 95 nC, same 600 V/50 A rating	Better suited for higher-frequency (≥30 kHz) soft-switched designs where gate drive loss dominates	Select when prioritizing gate drive efficiency over conduction loss in resonant topologies
STMicroelectronics STGW50H60DLF	Integrated gate driver interface, 1.9 V V_CE(sat), 135 nC Q_G, built-in NTC thermistor	Targeted for intelligent power modules (IPM) integration; requires external level-shifting gate drive	Choose when system-level diagnostics (temperature monitoring) and simplified layout outweigh discrete flexibility

Compared with IXGH50N60B3 and STGW50H60DLF, IRG4PC50WPBF offers the lowest conduction loss (1.8 V) and proven thermal robustness in hard-switched 15–20 kHz industrial inverters, making it optimal for cost-sensitive, high-reliability motor drive BOMs where gate drive complexity is already managed.

Availability

IRG4PC50WPBF is available at Aetrix Electronics and suitable for industrial motor drives, uninterruptible power supplies (UPS), solar microinverters, and induction heating systems requiring stable component supply and long-term production continuity.

Supply support for IRG4PC50WPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions, with global R&D centers and wafer fabs in Europe and Asia.

The IRG4PC50WPBF belongs to Infineon's legacy "IR" IGBT product line, designed specifically for rugged, high-current industrial inverter applications demanding low V_CE(sat), predictable switching behavior, and long-term reliability under thermal cycling.

FAQ

What is the maximum gate-emitter voltage rating for IRG4PC50WPBF?

The absolute maximum gate-emitter voltage is ±20 V. Operation beyond ±15 V risks permanent gate oxide damage. Recommended gate drive is +15 V for turn-on and –5 V to –10 V for turn-off to ensure robust noise immunity and prevent Miller-induced false turn-on in bridge configurations.

Does IRG4PC50WPBF include an integrated anti-parallel diode?

Yes - it features a monolithically integrated ultrafast recovery anti-parallel diode with 250 ns typical reverse recovery time (t_rr) and soft recovery characteristics. This eliminates the need for an external diode in half-bridge legs and reduces board space and parasitic inductance.

Can IRG4PC50WPBF be used in parallel configurations?

Yes - its positive temperature coefficient of V_CE(sat) enables stable current sharing across paralleled devices. Successful parallel operation requires matched gate drive impedance, symmetrical PCB layout, and shared heatsink mounting to maintain ≤5 °C inter-device junction temperature difference.

What is the recommended minimum gate resistor value for reliable switching?

A minimum gate resistor of 4.7 Ω is recommended to limit peak gate current to <3 A while maintaining <100 ns switching transitions. Lower values increase EMI and gate driver stress; higher values (>15 Ω) degrade switching speed and increase switching losses disproportionately.

IRG4PC50WPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: -

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Obsolete

IGBT Type:: -

Voltage - Collector Emitter Breakdown (Max):: 600 V

Current - Collector (Ic) (Max):: 55 A

Current - Collector Pulsed (Icm):: 220 A

Vce(on) (Max) @ Vge, Ic:: 2.3V @ 15V, 27A

Power - Max:: 200 W

Switching Energy:: 80µJ (on), 320µJ (off)

Input Type:: Standard

Gate Charge:: 180 nC

Td (on/off) @ 25°C:: 46ns/120ns

Test Condition:: 480V, 27A, 5Ohm, 15V

Reverse Recovery Time (trr):: -

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-247AC

IRG4PC50WPBF FAQ

1.How can I place an order for IRG4PC50WPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRG4PC50WPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRG4PC50WPBF reliable?

The price and inventory of IRG4PC50WPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRG4PC50WPBF is usually 5 days.

3.What payment methods are accepted for IRG4PC50WPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRG4PC50WPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRG4PC50WPBF?

IRG4PC50WPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRG4PC50WPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRG4PC50WPBF?

For technical support, including IRG4PC50WPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRG4PC50WPBF requirements.

6.How does Aetrix verify that IRG4PC50WPBF is sourced from the original manufacturer or authorized distributors?

All IRG4PC50WPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRG4PC50WPBF meets industry standards.

7.What is the process for return or replacement of IRG4PC50WPBF?

All IRG4PC50WPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRG4PC50WPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRG4PC50WPBF part is unused and in its original packaging.

Return procedure for IRG4PC50WPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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