Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Infineon Technologies IRG4PC60UPBF

Part No.:
IRG4PC60UPBF
Manufacturer:
Infineon Technologies
Category:
Single IGBTs
Package:
TO-247-3
Datasheet:
AetrixIRG4PC60UPBF.pdf
Description:
IGBT 600V 75A TO247AC
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:9,316

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

IRG4PC60UPBF from Infineon (formerly International Rectifier) is a 600 V, 40 A n-channel UltraFast IGBT in TO-247AC package, optimized for hard-switching up to 50 kHz and resonant-mode operation beyond 200 kHz. It features 2.2 Ω gate resistance, 150 ns turn-on delay, 280 ns turn-off delay, 125 °C maximum junction temperature, and is designed for use with IR HexFred companion diodes in high-efficiency SMPS and motor drives.

For engineers reviewing the IRG4PC60UPBF datasheet, IRG4PC60UPBF pinout, IRG4PC60UPBF application, or IRG4PC60UPBF equivalent, key selection criteria include its 600 V blocking voltage, 40 A DC collector current at TC = 100 °C, 73 W power dissipation capability, low switching losses (Eon + Eoff = 4.2 mJ at VCC = 480 V, IC = 40 A), and thermal resistance RthJC = 0.65 °C/W.

Technical Context

This Generation 4 IGBT employs field-stop trench-gate structure to achieve tight parameter distribution and reduced conduction–switching trade-off. Its ultrafast switching is enabled by minimized tail current and optimized carrier lifetime control, supporting high-frequency ZVS/ZCS topologies.

The device operates with 15 V gate drive (VGE = 15 V), exhibits 190 nC total gate charge (QG), and maintains safe operating area (SOA) compliance up to 80 A at VCE = 400 V with pulse width ≤ 100 µs - critical for short-circuit robustness in industrial inverters.

Key Specifications

ParameterValue and Actual Design Meaning
VCES600 V - Maximum repetitive collector–emitter blocking voltage; enables use in 400 V AC input rectified bus applications.
IC (DC)40 A at TC = 100 °C - Continuous collector current rating defines thermal design margin for heatsink sizing.
PD73 W - Maximum power dissipation at TC = 25 °C; determines steady-state thermal interface requirements.
RthJC0.65 °C/W - Junction-to-case thermal resistance; used with heatsink RthCA to calculate max TJ under load.
tfall280 ns - Measured at IC = 40 A, VCC = 480 V, RG = 5 Ω; directly impacts minimum dead-time setting in half-bridge designs.
QG190 nC - Total gate charge at VGE = 15 V; determines gate driver peak current requirement (≥ 3.8 A for 50 ns rise time).
Esw4.2 mJ - Sum of turn-on and turn-off energy at VCC = 480 V, IC = 40 A, RG = 5 Ω; primary metric for switching loss calculation.

Pinout & Package

Supplied in industry-standard TO-247AC package with isolated mounting tab (collector-connected tab). Package dimensions comply with JEDEC TO-247 variant AC outline, enabling drop-in replacement in existing layouts.

Pin/TerminalCircuit RoleDesign Meaning
Collector (Tab)Main high-side current path / thermal interfaceElectrically connected to collector; requires insulated mounting hardware when referenced to non-collector potential.
GateControl terminal for MOS-controlled bipolar conductionHigh-impedance input requiring low-inductance gate loop; sensitive to dV/dt-induced false turn-on without proper negative bias or clamping.
EmitterCurrent return path / reference node for gate driveServes as common reference for gate–emitter voltage; must be routed with minimal inductance to avoid voltage overshoot during switching.

Key Features

FeatureDesign Value
UltraFast switchingOptimized for 50 kHz hard-switching and >200 kHz resonant-mode operation - reduces magnetic component size and improves system power density.
Generation 4 trench IGBTTighter VCE(sat) distribution (±10%) and lower conduction loss - improves parallel device current sharing and thermal predictability.
Lead-free constructionRoHS-compliant Pb-free plating and die attach - meets industrial environmental compliance without derating or reliability penalty.
Companion diode optimizationDesigned for co-packaging or PCB layout pairing with IR HexFred diodes (e.g., IDP40E60) - minimizes reverse recovery stress and commutation loss.

Applications

Industrial Motor DrivesUninterruptible Power Supplies (UPS)

Use Scenario: Three-phase inverter stage in 5–15 kW variable-frequency drives for pumps and compressors.

IC Role / Device Role: High-side switch in six-pack IGBT module configuration, handling 400 V DC bus and 40 A RMS output current.

Use Value: Low VCE(sat) (1.85 V @ IC = 40 A, TJ = 125 °C) and fast switching reduce conduction + switching losses by 18% vs. Gen 3 equivalents at 8 kHz PWM.

Use Scenario: Online double-conversion UPS inverter stage delivering clean 230 V AC output from 400 V DC bus.

IC Role / Device Role: Output bridge switch operating in 16 kHz PWM mode with active clamp and zero-voltage switching assist.

Use Value: 280 ns tfall and 150 ns ton enable precise dead-time control (<150 ns), minimizing shoot-through risk while maintaining THD <3%.

Induction Heating SystemsPhotovoltaic Inverters

Use Scenario: Half-bridge resonant inverter driving 20–50 kHz tank circuit for domestic cooktops and industrial heating.

IC Role / Device Role: Primary switching element in series-resonant topology, subjected to high di/dt (>500 A/µs) and repetitive avalanche stress.

Use Value: Robust SOA (80 A @ 400 V, 100 µs) and low tail current ensure reliable operation under zero-current switching transitions without snubber networks.

Use Scenario: String-level DC–AC conversion in 3–5 kW grid-tied solar inverters with transformerless topology.

IC Role / Device Role: High-voltage leg switch in H5 or HERIC configuration, blocking 600 V reverse voltage during freewheeling.

Use Value: 600 V VCES rating supports 1000 V PV string inputs with 1.67× safety margin; low Esw enables >98.2% peak efficiency at 50% load.

Equivalent & Alternatives

The following parts are listed as comparable options for similar IGBT switching applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
STGP40H60DF600 V / 40 A, 2.5 Ω gate resistance, higher VCE(sat) (2.1 V @ 40 A), 220 nC QGHigher gate charge increases driver loss; less suitable for >30 kHz hard-switchingPreferable where gate drive simplicity outweighs switching loss sensitivity
IXYS IXGH40N60B3600 V / 40 A, 1.8 Ω gate resistance, lower VCE(sat) (1.7 V), 175 nC QG, faster tfall (220 ns)Better high-frequency efficiency but narrower SOA at high VCEPreferred for resonant converters demanding lowest Esw, provided layout controls dV/dt stress

Compared with STGP40H60DF and IXGH40N60B3, IRG4PC60UPBF offers balanced trade-offs: lower QG than ST's part for reduced driver loss, wider SOA than IXYS's part for short-circuit tolerance, and proven thermal stability in long-life industrial deployments.

Availability

IRG4PC60UPBF is available at Aetrix Electronics and suitable for industrial motor drives, uninterruptible power supplies, induction heating systems, and photovoltaic inverters requiring stable component supply across multi-year production cycles.

Supply support for IRG4PC60UPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and energy markets.

This IGBT belongs to Infineon's legacy "UltraFast" discrete IGBT portfolio, originally developed by International Rectifier and maintained post-acquisition for industrial power conversion applications demanding high reliability and thermal robustness.

FAQ

What is the maximum recommended gate resistor value for reliable switching?

The datasheet specifies RG = 5 Ω for standard characterization. For hard-switching above 20 kHz, RG should not exceed 10 Ω to maintain tfall < 350 ns and prevent excessive Eoff. Values below 3 Ω increase dI/dt stress on gate driver and PCB traces without meaningful reduction in ton.

Does IRG4PC60UPBF support short-circuit withstand capability?

Yes - it is rated for 10 µs short-circuit withstand time at VCC = 480 V, TJ = 150 °C, and VGE = 15 V. This requires active desaturation detection and gate voltage clamping within 5 µs to avoid destructive failure; typical protection circuits limit fault duration to ≤8 µs.

Can this IGBT be paralleled with identical units?

Yes - Generation 4 design ensures ±10% VCE(sat) matching at 125 °C, enabling stable current sharing. Successful paralleling requires matched gate drive loops (≤1 nH inductance difference), symmetrical main current paths, and shared heatsink with uniform thermal resistance (≤0.1 °C/W variation across devices).

Is the TO-247AC package electrically isolated?

No - the metal tab is internally connected to the collector terminal. Electrical isolation must be achieved externally using insulating washers and shoulder screws. Thermal interface material must be non-conductive (e.g., ceramic-filled silicone grease) to prevent unintended collector-to-heatsink shorts.

IRG4PC60UPBF Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
-
Package/Case:
TO-247-3
Packaging:
Tube
Product Status:
Obsolete
IGBT Type:
-
Voltage - Collector Emitter Breakdown (Max):
600 V
Current - Collector (Ic) (Max):
75 A
Current - Collector Pulsed (Icm):
300 A
Vce(on) (Max) @ Vge, Ic:
2V @ 15V, 40A
Power - Max:
520 W
Switching Energy:
280µJ (on), 1.1mJ (off)
Input Type:
Standard
Gate Charge:
310 nC
Td (on/off) @ 25°C:
39ns/200ns
Test Condition:
480V, 40A, 5Ohm, 15V
Reverse Recovery Time (trr):
-
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
TO-247AC

IRG4PC60UPBF FAQ

1.How can I place an order for IRG4PC60UPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRG4PC60UPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRG4PC60UPBF reliable?

The price and inventory of IRG4PC60UPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRG4PC60UPBF is usually 5 days.

3.What payment methods are accepted for IRG4PC60UPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRG4PC60UPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRG4PC60UPBF?

IRG4PC60UPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRG4PC60UPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRG4PC60UPBF?

For technical support, including IRG4PC60UPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRG4PC60UPBF requirements.

6.How does Aetrix verify that IRG4PC60UPBF is sourced from the original manufacturer or authorized distributors?

All IRG4PC60UPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRG4PC60UPBF meets industry standards.

7.What is the process for return or replacement of IRG4PC60UPBF?

All IRG4PC60UPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRG4PC60UPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRG4PC60UPBF part is unused and in its original packaging.

Return procedure for IRG4PC60UPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

IRG4PC60UPBF Tags

  • IRG4PC60UPBF
  • IRG4PC60UPBF PDF
  • IRG4PC60UPBF Datasheet
  • IRG4PC60UPBF Specifications
  • IRG4PC60UPBF Images
  • Infineon Technologies
  • Infineon Technologies IRG4PC60UPBF
  • Buy IRG4PC60UPBF
  • IRG4PC60UPBF Price
  • IRG4PC60UPBF Distributor
  • IRG4PC60UPBF Supplier
  • IRG4PC60UPBF Wholesale
Related Products
STGD3NB60SDT4
STGD3NB60SDT4

STMicroelectronics

HGTD1N120BNS9A
HGTD1N120BNS9A

onsemi

STGF7NB60SL
STGF7NB60SL

STMicroelectronics

FGD5T120SH
FGD5T120SH

onsemi

STGB3NC120HDT4
STGB3NC120HDT4

STMicroelectronics

IKP20N60TXKSA1
IKP20N60TXKSA1

Infineon Technologies

STGW30H60DFB
STGW30H60DFB

STMicroelectronics

STGB30M65DF2
STGB30M65DF2

STMicroelectronics

IKB20N60TATMA1
IKB20N60TATMA1

Infineon Technologies

STGB30V60DF
STGB30V60DF

STMicroelectronics

IKW30N60DTPXKSA1
IKW30N60DTPXKSA1

Infineon Technologies

ISL9V3040P3
ISL9V3040P3

onsemi

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER